smt a1 transistor
Abstract: A1234 G200 PTF 10021
Text: PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is
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1-877-GOLDMOS
1301-PTF
smt a1 transistor
A1234
G200
PTF 10021
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Untitled
Abstract: No abstract text available
Text: GOLDMOS PTF 10021 Field Effect Transistor 30 Watts, 1.4–1.6 GHz Description The PTF 10021 is an internally matched, 30–watt GOLDMOS FET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. This device operates at 48% efficiency
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1-877-GOLDMOS
1522-PTF
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smt a1 transistor
Abstract: G200
Text: GOLDMOS PTF 10021 Field Effect Transistor 30 Watts, 1.4–1.6 GHz Description The PTF 10021 is an internally matched, 30–watt GOLDMOS FET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. This device operates at 48% efficiency
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1-877-GOLDMOS
1522-PTF
smt a1 transistor
G200
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J201 Replacement
Abstract: JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"
Text: IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector Current
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IT130A
IT130
IT131
IT132
250mW
500mW
J201 Replacement
JFET 401
Dual PNP Transistor
depletion 60V power mosfet
3N165 "pin compatible"
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sot 26 Dual N-Channel MOSFET
Abstract: 10mA JFET LS358
Text: LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES ∆re ≤1Ω from ideal TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC C2 E1 5 B1 BOTH SIDES 500mW 4.3mW/°C
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LS358
250mW
500mW
sot 26 Dual N-Channel MOSFET
10mA JFET
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jfet differential transistor
Abstract: JFET 401 U402 N CHANNEL FET
Text: LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature
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LS318
250mW
500mW
LS318
jfet differential transistor
JFET 401
U402 N CHANNEL FET
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J201 Replacement
Abstract: 2N5019 "direct replacement"
Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation
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IT124
IT124
250mW
500mW
J201 Replacement
2N5019 "direct replacement"
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Current Regulator Diode
Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted
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LS350
LS351
LS352
275MHz
250mW
500mW
LS352
Current Regulator Diode
J110 spice
J502
"Dual npn Transistor"
"Dual PNP Transistor"
VCR11N
J201 spice
Dual PNP Transistor
U402 N CHANNEL FET
jfet differential transistor
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Untitled
Abstract: No abstract text available
Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted
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LS310
LS311
LS312
LS313
250MHz
250mW
500mW
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Untitled
Abstract: No abstract text available
Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1
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LS301
LS302
LS303
100MHz
250mW
500mW
LS301ithic
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Untitled
Abstract: No abstract text available
Text: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 TA= 25°C unless otherwise noted IC Collector Current
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IT120A
IT120
IT121
IT122
250mW
500mW
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Dual pnp Dual npn Transistor
Abstract: n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL
Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated
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LS3550
OT-23
Dual pnp Dual npn Transistor
n-channel JFET sot23-6
surface mount pico-amp diode
dual P-Channel JFET sot23
A1 sot23 n-channel
dual Channel JFET sot23
"Dual npn Transistor"
LS841 SOIC
J110 spice
A6 SOT-23 MOSFET P-CHANNEL
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J201 spice
Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated
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LS3250
OT-23
J201 spice
dual P-Channel JFET sot23
2n4416 transistor spice
LS3250A
a7 surface mount diode
J202 TRANSISTOR
fet j310
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capacitor siemens 4700 35
Abstract: L15 800 G200 K1206 PTF10049 SMT 181 resistor SIEMENS B 58 371 470-860 mhz Power amplifier w PTF 10049
Text: PTF 10049 85 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10049 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications in the 470 to 860 MHz band. It is rated at 85 watts
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K1206
UT-85-25
1-877-GOLDMOS
1301-PTF
capacitor siemens 4700 35
L15 800
G200
K1206
PTF10049
SMT 181 resistor
SIEMENS B 58 371
470-860 mhz Power amplifier w
PTF 10049
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bt 1696
Abstract: 12x12 bga thermal resistance 35x35 bga BGA 23X23 BGA 27X27 pitch TsoP 20 Package XILINX xilinx CS144 thermal resistance CF1144 BGA thermal resistance 6x8 smt a1 transistor
Text: Xilinx Advanced Packaging Electronic packages are the interconnect housings for semiconductor devices. They provide electrical interconnections between the IC and the board, and they efficiently remove the heat generated by the device. Device feature sizes are
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Abstract: No abstract text available
Text: UMA1N / UMB1N / FMA1A / IMB1A / IMB5A Transistors General purpose dual digital transistors UMA1N / UMB1N / FMA1A / IMB1A / IMB5A !External dimensions (Units : mm) !Feature 1) Two DTA124E chips in a UMT or SMT package. −55 ~ +150 1.3 2.0 (2) 0.9 0.7 UMB1N
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DTA124E
120mW
200mW
SC-88A
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IC t148
Abstract: DTA124E T110 T148
Text: UMA1N / UMB1N / FMA1A / IMB1A / IMB5A Transistors General purpose dual digital transistors UMA1N / UMB1N / FMA1A / IMB1A / IMB5A !External dimensions (Units : mm) !Feature 1) Two DTA124E chips in a UMT or SMT package. −55 ~ +150 1.3 2.0 (2) 0.9 0.7 UMB1N
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DTA124E
120mW
200mW
SC-88A
SC-74
5mA/-10mA
IC t148
T110
T148
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smt a1 transistor
Abstract: smt a1 transistor NPN J507 Replacement n channel 2n4393 2n4416 transistor spice jfet photo diode u406 type u405 siliconix
Text: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ∆CR ≤ 0.2pF ABSOLUTE MAXIMUM RATINGS1 DPAD DPAD1 TO-72 BOTTOM VIEW TO-78
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500mW
smt a1 transistor
smt a1 transistor NPN
J507 Replacement
n channel 2n4393
2n4416 transistor spice
jfet photo diode
u406 type
u405 siliconix
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ericsson 10159
Abstract: PTF10159 470-860 mhz Power amplifier w
Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power
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UT-85-25
1-877-GOLDMOS
1301-PTF
ericsson 10159
PTF10159
470-860 mhz Power amplifier w
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ericsson 10159
Abstract: PTF 10159 10159 atc 174 capacitor siemens 4700 35 G200 K1206 UT-85-25 470-860 mhz Power amplifier w UT85-25
Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, LDMOS FET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 130 watts power output. Nitride surface passivation and
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UT-85-25
1-877-GOLDMOS
1301-PTF
ericsson 10159
PTF 10159
10159
atc 174
capacitor siemens 4700 35
G200
K1206
470-860 mhz Power amplifier w
UT85-25
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UMT3N
Abstract: T108 T109 T110
Text: UMT3N/IMT3A h ÿ > v 7s £ /Transistors UMT3N IMT3A 7 4 V U -— T “ y K -X — K x / W X Isolated Mini-Mold Device -JK 'J'ft^Jlfifll/G eneral Small Signal Amp. • W fiv fîi ¡2/Dimensions Unit : mm 1) UMT (SC-70), SMT (SC-59) t i L'«o 2) UMT, SMT CDÉ
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SC-70)
SC-59)
15OLLECTOR
UMT3N
T108
T109
T110
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Untitled
Abstract: No abstract text available
Text: IMB4 /Transistors t' I M 4 B 'Sis— T V O / ’v— ^ K ^ ^ /V ln v e rte r Driver Isolated Mini-Mold Device • • ^ J g -^ J H /D im e n s io n s Unit : mm 2( OT h Vt>J VtVvJlcr 1) SMT (SC-59) fclD — , ,+0.2 7 > '/ X j i if A o T i'J o '• - 0 . '
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SC-59)
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Untitled
Abstract: No abstract text available
Text: IMX1 /Transistors I M X 1 7 < 7 1 / - T 7 K ^ - ;E - ^ K t / H 7 —fix/H f ^ * a lflIffl/G eneral Small Signal Amp. Isolated Mini-Mold Device • • ^. g-^->i@ /Dim ensions U n it: mm) 1) SMT (SC-59) t m — f t t H c 2 f@(7) h 7 > - > ' X 5 i ! A o Zi'&o
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SC-59)
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UM81N
Abstract: sc-88a si DTA124E SML-210 SML-210FT SML-210MT T110 T148
Text: UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A Transistors General purpose dual digital transistors UMA1NI UMB1NI UMB5NI FMA1A/ IMB1AI IMB5A •External dimensions (U nits: mm) •Features 1) Two DTA124E chips in a UMT or SMT package. •Absolute maximum ratings (Ta = 25°C)
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DTA124E
UM81N
210M7
sc-88a si
SML-210
SML-210FT
SML-210MT
T110
T148
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