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    SN 8400 N Search Results

    SN 8400 N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    840002AG-01LF Renesas Electronics Corporation FemtoClock®,Crystal-to-LVCMOS/LVTTL Frequency Synthesizer Visit Renesas Electronics Corporation
    840004AG-11LF Renesas Electronics Corporation FemtoClock® Crystal-to-LVCMOS/LVTTL Frequency Synthesizer Visit Renesas Electronics Corporation
    840022AKI-02LFT Renesas Electronics Corporation FemtoClock® Crystal-to-LVCMOS/LVTTL Clock Generator Visit Renesas Electronics Corporation
    840001AKI-34LFT Renesas Electronics Corporation FemtoClock® Crystal-to-LVCMOS/LVTTL Frequency Synthesizer Visit Renesas Electronics Corporation
    840004AG-01LF Renesas Electronics Corporation FemtoClock® Crystal-to-LVCMOS/LVTTL Frequency Synthesizer Visit Renesas Electronics Corporation
    SF Impression Pixel

    SN 8400 N Price and Stock

    Microchip Technology Inc MCP3001-I/SN

    Single Channel ADC - SAR - 200ksps - 10-bit Serial - Automotive - 8-Pin SOIC N - Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MCP3001-I/SN 700
    • 1 -
    • 10 -
    • 100 $1.65
    • 1000 $1.57
    • 10000 $1.5
    Buy Now

    SN 8400 N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    olin 7025

    Abstract: 7025 alloy lead frame CDA 194 X10-4 eftec-64t Eftec 64t resistivity table sn 8400 PHYSICAL CONSTANTS OF IC PACKAGE MATERIALS
    Text: Physical Constants of IC Package Materials 5 Table 5-1 through Table 5-3 list typical values for selected properties of materials used in IC packages. Table 5-1. Case Material Characteristics Properties Density Modulus of Elasticity Tensile Strength Units


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    ISO 8820-3

    Abstract: DIN 72581 040204 SAE 1888
    Text: BLADE-TYPE FUSES WICKMANN FK3 / No. 169.6885 ISO 8820, 32V 32V, T Specifications Time-Current Characteristic Packaging Code and Info Time Lag T 2: Bulk (1000 pcs.) Standards Materials DIN 72581/3E SAE J 1888 ISO 8820-3 UL 248 Body: Element: Cover: Terminals:


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    72581/3E days-95% ISO 8820-3 DIN 72581 040204 SAE 1888 PDF

    sn 8400

    Abstract: Pudenz ISO 8820
    Text: BLADE-TYPE FUSES WICKMANN FK3 / No. 169.6885 formerly 169 ISO 8820, 32V 32V, T Specifications Time-Current Characteristic Packaging Time Lag T 2: Bulk (1000 pcs.) Standards Materials DIN 72581/3E SAE J 1888 ISO 8820 Body: Element: Cover: Terminals: Features


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    72581/3E days-95% sn 8400 Pudenz ISO 8820 PDF

    SAE 1888

    Abstract: 95 marking
    Text: BLADE-TYPE FUSES WICKMANN FK3 / No. 169 TOE / No. 165 ISO 8820, 32V/58V 32V/58V, T Specifications Time-Current Characteristic Packaging Time Lag T 100: Bulk (1000 pcs.) Standards Materials DIN 72581/3E SAE J 1888 ISO 8820 UL 248 Body: Element: Cover: Terminals:


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    2V/58V, 72581/3E days-95% SAE 1888 95 marking PDF

    SMD marking 1N3

    Abstract: marking 1N3 smd marked rc HFQ02-5N9 sn 8400
    Text: RoHS High Frequency, High Q Chip Inductor Dimensions: HFCQ02 Inches mm 0.012±0.001 (0.30±0.03) 0.006±0.002 (0.15±0.05) 0.024±0.001 (0.60±0.03) 0.012±0.001 (0.30±0.03) Allied Part Number HFQ02-0N6_-RC HFQ02-0N7_-RC HFQ02-0N8_-RC HFQ02-0N9_-RC HFQ02-1N0_-RC


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    HFCQ02 HFQ02-0N6 HFQ02-0N7 HFQ02-0N8 HFQ02-0N9 HFQ02-1N0 HFQ02-1N1 HFQ02-1N2 HFQ02-1N3 HFQ02-1N4 SMD marking 1N3 marking 1N3 smd marked rc HFQ02-5N9 sn 8400 PDF

    SUMIKA

    Abstract: PDB1003 PDB1003100MZF PDB1003101MZF PDB1003150MZF PDB1003151MZF PDB1003220MZF PDB1003221MZF PDB1003330MZF PDB1003331MZF
    Text: SMD POWER INDUCTORS PDB1003 SERIES 1. PART NO. EXPRESSION : PDB1003101MZF a (b) (c) (d)(e)(f) (a) Series code (d) Tolerance code : M = ±20% (b) Dimension code (e) X, Y, Z : Standard part (c) Inductance code : 101 = 100uH (f) F : Lead Free 2. CONFIGURATION & DIMENSIONS :


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    PDB1003 PDB1003101MZF 100uH SUMIKA PDB1003100MZF PDB1003101MZF PDB1003150MZF PDB1003151MZF PDB1003220MZF PDB1003221MZF PDB1003330MZF PDB1003331MZF PDF

    B66289G0000X187

    Abstract: B66289 B66289G0000X149 B66289G0000X192 B66289G0000X197 3818 E N97 FERRITE CORE Epcos N87 ferrite
    Text: Ferrites and accessories EELP 38, EILP 38 Core set with and without clamp recess Series/Type: Date: B66289G, B66289P, B66459G, B66459P September 2006 Data Sheet  EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.


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    B66289G, B66289P, B66459G, B66459P B66289 B66289G0000X187 B66289 B66289G0000X149 B66289G0000X192 B66289G0000X197 3818 E N97 FERRITE CORE Epcos N87 ferrite PDF

    ferroxcube 3D3

    Abstract: EP13-3E27 coil former CSH-EP13-2S-10P EP13-3D3 ferroxcube sn 8400 3B46 CSH-EP13-1S-10P EP13 Coil
    Text: FERROXCUBE DATA SHEET EP13 EP cores and accessories Supersedes data of February 2002 2004 Sep 01 Ferroxcube EP cores and accessories EP13 CORE SETS Effective core parameters SYMBOL PARAMETER VALUE Σ I/A core factor (C1) 1.24 mm−1 Ve effective volume 472


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    MGC186 ferroxcube 3D3 EP13-3E27 coil former CSH-EP13-2S-10P EP13-3D3 ferroxcube sn 8400 3B46 CSH-EP13-1S-10P EP13 Coil PDF

    kb200

    Abstract: KC100
    Text: 05459 K SERIES Only One Name Means ProTek’Tion HIGH POWERED TVS COMPONENT APPLICATIONS FIGURE 1 POWER DERATING CURVE • DC & AC Applications • Remote Transmission Lines • Industrial Wiring 100 Peak Pulse Power 10/1000µs 80 % Of Rated Power FEATURES


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    E333727 kb200 KC100 PDF

    umf1009

    Abstract: SAA1136 PCF8568 TSA5511 pcf8200 SAA9020 8048 microcontroller i2c tv receiver schematic diagram PHILIPS SL00949 application tsa5511
    Text: INTEGRATED CIRCUITS AN168 The I2C serial bus: theory and practical consideration using Philips low-voltage PCF84Cxx and PCD33xx µC families Author: Carl Fenger Philips Semiconductors 1988 Dec Philips Semiconductors Application note The I2C serial bus: theory and practical consideration using


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    AN168 PCF84Cxx PCD33xx PCF84Cxxx PCD33xx umf1009 SAA1136 PCF8568 TSA5511 pcf8200 SAA9020 8048 microcontroller i2c tv receiver schematic diagram PHILIPS SL00949 application tsa5511 PDF

    Keithley 2400

    Abstract: HP4291A L0805
    Text: Accu-L SMD High-Q RF Inductor 2 10 nH Inductor Top View ACCU-L® TECHNOLOGY The Accu-L® SMD Inductor is based on thin-film multilayer technology. This technology provides a level of control on the electrical and physical characteristics of the component which


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    860mbar 1060mbar Keithley 2400 HP4291A L0805 PDF

    Untitled

    Abstract: No abstract text available
    Text: Accu-L SMD High-Q RF Inductor 2 10 nH Inductor Top View ACCU-L® TECHNOLOGY The Accu-L® SMD Inductor is based on thin-film multilayer technology. This technology provides a level of control on the electrical and physical characteristics of the component which


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    450MHz 860mbar 1060mbar PDF

    HP4291A

    Abstract: L0805
    Text: 2 Thin-Film Technology Accu-L Thin-Film RF/Microwave Inductors 25 Accu-L® SMD High-Q RF Inductor 2 10 nH Inductor Top View ACCU-L® TECHNOLOGY The Accu-L® SMD Inductor is based on thin-film multilayer technology. This technology provides a level of control on the


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    860mbar 1060mbar HP4291A L0805 PDF

    B65621

    Abstract: B65621J0000R048 B65621J0250A048 B65621J0630A048 B65621J3150K048 B65623A0001X000 N48 transformer core ferrite n48
    Text: Ferrites and accessories P 41 x 25 Core and accessories Series/Type: Date: B65621, B65623 September 2006 Data Sheet  EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.


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    B65621, B65623 B65621 FPK0174-1 B65and B65621 B65621J0000R048 B65621J0250A048 B65621J0630A048 B65621J3150K048 B65623A0001X000 N48 transformer core ferrite n48 PDF

    X-band Gan Hemt

    Abstract: x-band mmic lna TIC 1268 BiCmos 7400 FMA219-000SQ two bjt bc 107 A219 FMA219 MIL-HDBK-263 SiGe HBT GAIN BLOCK MMIC AMPLIFIER
    Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output


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    FMA219 FMA219 FMA219-000 FMA219-000SQ FMA219-000S3 DS090509 X-band Gan Hemt x-band mmic lna TIC 1268 BiCmos 7400 FMA219-000SQ two bjt bc 107 A219 MIL-HDBK-263 SiGe HBT GAIN BLOCK MMIC AMPLIFIER PDF

    Untitled

    Abstract: No abstract text available
    Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output


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    FMA219 FMA219 FMA219-000 FMA219-000SQ FMA219-000S3 DS090509 PDF

    ferrite TRANSFORMER calculation

    Abstract: Al value of ferrite core ferrite core transformer design EELP 22 B66293 B66293G0000X187 B66293P0000X187 ferrite n87 transformer 705k1 B-662
    Text: Ferrites and accessories EELP 58, EILP 58 Core set without clamp recess Series/Type: Date: B66293G, B66293P September 2006 Data Sheet  EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.


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    B66293G, B66293P B66293 FEK0410-E ferrite TRANSFORMER calculation Al value of ferrite core ferrite core transformer design EELP 22 B66293 B66293G0000X187 B66293P0000X187 ferrite n87 transformer 705k1 B-662 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


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    NP100N04NUJ R07DS0364EJ0100 NP100N04NUJ AEC-Q101 NP100N04NUJâ S18-AY O-262 MP-25SK) Abs9044 PDF

    E41429

    Abstract: sumikon 2500 07.311 PM-9630 Sumikon B65843A0063A038 B65843A0100A038 B65843A0160B038 B65843A0200B038 B65843A0250J038
    Text: Ferrites and accessories EP 13 Core and accessories Series/Type: Date: B65843A, B65844 September 2006 Data Sheet  EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.


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    B65843A, B65844 B65843A FEP0017-A E41429 sumikon 2500 07.311 PM-9630 Sumikon B65843A0063A038 B65843A0100A038 B65843A0160B038 B65843A0200B038 B65843A0250J038 PDF

    TO-238

    Abstract: sn 8400
    Text: I X Y S 1ÔE CORP OOOOtaSS D 5 'T - Z ° \ A S> □IXYS A D V A N C E TEC H N IC AL DATA SH EET* December 1988 DATA SH EET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, H D M O S™ Family FEATURES:_


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    1300C IXFN100N10 O-238 O-238 TO-238 sn 8400 PDF

    IXFN64N20

    Abstract: 1301C
    Text: I X Y S CÔRP 1ÖE D 4bôb5Hb QOQObS? =1 - 3 □IXYS DATA SH EET NO. 1301C A D V A N C E T E C H N IC A L DATA S H E E T * HiPerFET Power MOSFETs ^ 5 December 1988 IXFN64N20 N-Channel High dv/dt, Low trr, H D M O S ™ Family 64A FEATU RES:_


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    1301C IXFN64N20 O-238 IXFN64N20 1301C PDF

    RBS 6401

    Abstract: scn8048
    Text: Signefics SCN8400 Series Single-Chip 8-Bit Microcontroller Product Specification Microprocessor Products PIN CONFIGURATION DESCRIPTION FEATURES The SCN84XX family of microcontrollers is fabricated in NMOS. The family con­ sists of five devices. Each version has


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    SCN84XX 20-pin SCN8422 SCN8442, SCN8048. RBS 6401 scn8048 PDF

    6230h

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER II O R DËT| 4ÖS54S2 D007b4S 0 | T 02 Data Sheet No. PD-3.124 IINTERNATIONAL r e c t i f i e r S23D & S23DH S E R IE S 800-200 VOLTS R A N G E 340 A M P RM S, RIN G A M P LIF Y IN G GATE PH ASE CO N TRO L TYPE STUD M OUNTED SCRs VOLTAGE RATINGS


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    S54S2 D007b4S S23DH T0-209AB T-25-19 209AB 6230h PDF

    MH1SS1

    Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
    Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik


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