ph Series Zener
Abstract: Zener PH PH 36 Zener Zener PH 200
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Diodes - Focus Products for Multi-Market Applications zener diodes Zener Diodes Selector Guide Featured Packages SOD - 5 2 3 Q u a d r o ME L F SOD - 8 0 G l a s s SOD - 3 2 3 M i n i ME L F SOD - 8 0 ( G l a s s )
|
Original
|
PDF
|
VMN-SG2115-1310
ph Series Zener
Zener PH
PH 36 Zener
Zener PH 200
|
STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
|
Original
|
PDF
|
OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
|
DO-213
Abstract: DO213
Text: LL265 Band switching diode Features 1. Small surface mounting type 2. Low differential forward resistance 3. Low diode capacitance 4. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings
|
Original
|
PDF
|
LL265
1-Nov-2006
100MHZ,
OD-80
DO-213
DO213
|
DO-213
Abstract: DO213
Text: LL265 Band switching diode Features 1. Small surface mounting type 2. Low differential forward resistance 3. Low diode capacitance 4. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings
|
Original
|
PDF
|
LL265
1-Sep-2009
100MHZ,
OD-80
DO-213
DO213
|
schottky DO-213
Abstract: No abstract text available
Text: LL60/LL60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
|
Original
|
PDF
|
LL60/LL60P
LL60P
1-Sep-2009
200mA
schottky DO-213
|
Untitled
Abstract: No abstract text available
Text: LL4151 High-speed switching diode Features 1. Small surface mounting type 2. High reliability Applications High speed switch and general purpose use in computer and industrial applications Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃
|
Original
|
PDF
|
LL4151
1-Nov-2006
OD-80
DO-213
|
Untitled
Abstract: No abstract text available
Text: LL4150 High-speed switching diode Features 1. Small surface mounting type 2. High reliability 3. High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Construction Silicon epitaxial planar
|
Original
|
PDF
|
LL4150
1-Sep-2009
OD-80
DO-213
|
Untitled
Abstract: No abstract text available
Text: LL4151 High-speed switching diode Features 1. Small surface mounting type 2. High reliability Applications High speed switch and general purpose use in computer and industrial applications Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃
|
Original
|
PDF
|
LL4151
OD-80
DO-213
1-Sep-2009
|
Untitled
Abstract: No abstract text available
Text: LL5711 / LL6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering,
|
Original
|
PDF
|
LL5711
LL6263
LL6263
1-Nov-2006
OD-80
DO-213
|
DO213
Abstract: No abstract text available
Text: BAS85 Schottky Barrier Diode Features 1. High reliability 2. Very low forward voltage 3. Small surface mounting type Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value
|
Original
|
PDF
|
BAS85
1-Sep-2009
OD-80
DO-213
DO213
|
Untitled
Abstract: No abstract text available
Text: LL101A/LL101B/LL101C Schottky Barrier Diode Features 1. Small surface mounting type. 2. High reliability. 3. Low reverse current and low forward voltage. 4. This diode is also available in the DO-35 case with type designation SD101A, B, C. Applications HF-Detector, protection circuit, small battery charger,
|
Original
|
PDF
|
LL101A/LL101B/LL101C
DO-35
SD101A,
LL101A
LL101B
LL101C
1-Sep-2009
OD-80
DO-213
|
general semiconductor DIODE SOD80
Abstract: DO213
Text: RLS245 High-voltage switching diode Features 1. Small surface mounting type 2. High reliability 3. VRM=250V Applications High voltage switch and general purpose rectification Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
|
Original
|
PDF
|
RLS245
1-Nov-2006
OD-80
DO-213
general semiconductor DIODE SOD80
DO213
|
sod80 aa diode
Abstract: No abstract text available
Text: BAS81/BAS82/BAS83 Schottky Barrier Diode Features 1. Small surface mounting type 2. High reliability 3. Low leakage current 4. low forward voltage drop 5. Low capacitance Applications Diode for low currents with a low supply voltage Small battery charger HF-Detector
|
Original
|
PDF
|
BAS81/BAS82/BAS83
BAS81
BAS82
BAS83
1-Sep-2009
OD-80
DO-213
sod80 aa diode
|
Untitled
Abstract: No abstract text available
Text: LL245 High-voltage switching diode Features 1. Small surface mounting type 2. High reliability 3. VRM=250V Applications High voltage switch and general purpose rectification Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
|
Original
|
PDF
|
LL245
1-Sep-2009
OD-80
DO-213
|
|
Schottky mini melf
Abstract: SCHOTTKY DIODE SOD-80
Text: LL60/LL60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
|
Original
|
PDF
|
LL60/LL60P
LL60P
1-Nov-2006
200mA
Schottky mini melf
SCHOTTKY DIODE SOD-80
|
DO-213
Abstract: DO213 BAS81 BAS82 BAS83 diode sod80 aa diode
Text: BAS81/BAS82/BAS83 Schottky Barrier Diode Features 1. Small surface mounting type 2. High reliability 3. Low leakage current 4. low forward voltage drop 5. Low capacitance Applications Diode for low currents with a low supply voltage Small battery charger HF-Detector
|
Original
|
PDF
|
BAS81/BAS82/BAS83
BAS81
BAS82
BAS83
1-Nov-2006
OD-80
DO-213
DO213
BAS81
BAS82
BAS83
diode
sod80 aa diode
|
Untitled
Abstract: No abstract text available
Text: BAV100 thru BAV103 Small-Signal Diodes Features High reliability Applications For general purpose Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current Type Unit VRRM 60 V BAV101
|
Original
|
PDF
|
BAV100
BAV103
BAV101
BAV102
BAV103
|
Untitled
Abstract: No abstract text available
Text: LL42/LL43 Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage 3. Small surface mounting type Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings
|
Original
|
PDF
|
LL42/LL43
1-Sep-2009
OD-80
DO-213
|
LL4148 melf
Abstract: No abstract text available
Text: LL4148/LL4448 High-speed switching diode Features 1. Small surface mounting type 2. High reliability 3. High speed trr≤4 ns Applications Extreme fast switches Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Repetitive peak reverse voltage
|
Original
|
PDF
|
LL4148/LL4448
1-Sep-2009
OD-80
DO-213
LL4148 melf
|
Untitled
Abstract: No abstract text available
Text: BAS48 Schottky Barrier Diode Features 1. High reliability 2. Very low forward voltage 3. Small surface mounting type Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Repetitive peak reverse voltage
|
Original
|
PDF
|
BAS48
tp10ms,
1-Sep-2009
OD-80
DO-213
|
Untitled
Abstract: No abstract text available
Text: LL5711 / LL6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering,
|
Original
|
PDF
|
LL5711
LL6263
LL5711
1-Sep-2009
OD-80
DO-213
|
Untitled
Abstract: No abstract text available
Text: LL4150 High-speed switching diode Features 1. Small surface mounting type 2. High reliability 3. High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Construction Silicon epitaxial planar
|
Original
|
PDF
|
LL4150
1-Nov-2006
OD-80
DO-213
|
BAV10
Abstract: BAV100
Text: BAV100 thru BAV103 Small-Signal Diodes Features High reliability Applications For general purpose Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current Type Unit VRRM 60 V BAV101
|
Original
|
PDF
|
BAV100
BAV103
BAV101
BAV102
BAV103
BAV10
|
Untitled
Abstract: No abstract text available
Text: LL103A/LL103B/LL103C Schottky Barrier Diode Features 1. Small surface mounting type 2. High reliability 3. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings
|
Original
|
PDF
|
LL103A/LL103B/LL103C
LL103A
LL103B
LL103C
1-Sep-2009
OD-80
DO-213
|