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    SOI SWITCHES Search Results

    SOI SWITCHES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCWA1225G Toshiba Electronic Devices & Storage Corporation High Power Switch / SPDT / WCSP14 Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    TDS4A212MX Toshiba Electronic Devices & Storage Corporation PCI Express switch, 2 Differential Channel, 2:1 multiplexer/1:2 demultiplexer, SPDT, XQFN16 Visit Toshiba Electronic Devices & Storage Corporation
    TDS4B212MX Toshiba Electronic Devices & Storage Corporation PCI Express switch, 2 Differential Channel, 2:1 multiplexer/1:2 demultiplexer, SPDT, XQFN16 Visit Toshiba Electronic Devices & Storage Corporation

    SOI SWITCHES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    "RF Switch"

    Abstract: 20 qfn 3x3 RF SWITCH RF Switches QFN 4X4 P6102 AT4510 Honeywell OR SenSym rf 4*4 mm QFN Digital Attenuator
    Text: 0275-000.qxp 5/15/07 12:29 PM Page 1 RF / Microwave Services HIGH PERFORMANCE SOI RF SWITCHES AND DIGITAL ATTENUATORS Short-Form Product Catalog 0275-000.qxp 5/15/07 12:29 PM Page 2 RF / Microwave Services Short-Form Product Catalog High Performance SOI CMOS RF Switches and Digital Attenuators


    Original     		HRF-SW1000 HRF-SW1001 HRF-SW1020 P61-0275-000-001 "RF Switch" 20 qfn 3x3 RF SWITCH RF Switches QFN 4X4 P6102 AT4510 Honeywell OR SenSym rf 4*4 mm QFN Digital Attenuator PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		HLX6256 1x106ra 1x10l4 1x101 4551A72 PDF

    Untitled

    Abstract: No abstract text available
    Text: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is


    Original     		HX6228 Hone8295 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.6 j^m Low Power Process (Leff= 0.45 |im) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		HLX6228 1x106 1x101 1x109 0014flb 6C634 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.6 nm Low Power Process (Lef)= 0.45 (im) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		1x106rad HLX6228 1x101 1x109 32-Lead PDF

    HX6228

    Abstract: honeywell memory sram
    Text: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is


    Original     		HX6228 Honeywe-8295 HX6228 honeywell memory sram PDF

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 32K x 8 STATIC RAM— Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'” IV Silicon on Insulator SOI 0.7 (im Low Power Process (Letl= 0.55 urn) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		1x106rad HLX6256 1x109 28-Lead CDIP2-T28 PDF

    Inselek

    Abstract: Boeing NOW JERSEY SEMICONDUCTOR PHYSICS Mueller Electric Company soi switches 2003 soi switches cmos transistor 1972
    Text: W hat is Silicon-on-Sapphire? Silicon-on-Sapphire SOS is one of the siliconon-insulator (SOI) semiconductor manufacturing technologies. In fact, SOS is the first of the SOI technologies. SOS is formed by depositing a thin layer of silicon onto a sapphire wafer at high temperature.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military/Space Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6256 FEATURES RADIATION OTHER Fabricated with RICMOS -IV Silicon on Insulator SOI 0.8 nm Process • Read/Write Cycle Times < 25 ns (-55 to 125°C) Total Dose Hardness through 1x10erad(Si02)


    OCR Scan     		HX6256 1x10erad 1x101 1x109 28-Lead 28-Lead PDF

    Transistors smd A7H

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 (j.m Low Power Process (Leff= 0.5 (¿m) • Read/Write Cycle Times < 25 ns (-55 to 125°C)


    OCR Scan     		1x10erad 1x101 HLX6228 32-Lead Transistors smd A7H PDF

    hx6856

    Abstract: No abstract text available
    Text: Honeywell Military Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6856 FEATURES RADIATION OTHER Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 irni Process • Read/W rite Cycle Times s 25 ns (-55 to 125°C) Total Dose Hardness through 1x106 rad(S i02)


    OCR Scan     		1x106 1x101 HX6856 36-Lead 28-Lead hx6856 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |im Low Power Process (Leff= 0.5 |am) • Read/Write Cycle Times < 25 ns (-55 to 125°C)


    OCR Scan     		1x106rad 1x101 1x109 HLX6228 32-Lead PDF

    smd transistor NJ

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM— SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106 rad(S i02)


    OCR Scan     		1x106 1x101 1x109 HX6256 28-Lead smd transistor NJ PDF

    1kx1 static ram

    Abstract: 80c85 S6504 A10 dual operational cmos ttl level shifter S6532 S3374 s7616
    Text: HARRIS SEflICOND SECTOR i-/lyu/il t i j IfaE D • 43 05271 OOlSlTfl b ■ HS-65641/44/45RH HS-65646/48RH HARRIS PREVIEW Radiation Hardened Asynchronous 64K SOI CM O S Static RAM Family May 1988 Features • 1.2 Micron Radiation Hardened SOI CM O S 1 X106RAD Si


    OCR Scan     		HS-65641/44/45RH HS-65646/48RH X106RAD S-82C 59ARH S-65142RH S-3560RH S-3569RH S-76161RH 1kx1 static ram 80c85 S6504 A10 dual operational cmos ttl level shifter S6532 S3374 s7616 PDF

    E310A

    Abstract: HLX6228
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 35 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)


    Original     		HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead E310A HLX6228 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan     		HX6228 1x106 1x1014cm 1x109rad 1x101 32-Lead 1x106rad 2x105 PDF

    lt 6228

    Abstract: TRANSISTOR A7h
    Text: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |a,m Low Power Process (Leff= 0.5 |a,m) • Read/Write Cycle Times < 2 5 ns (-55 to 125°C)


    OCR Scan     		1x106ra 1x101 1x109 HLX6228 32-Lead lt 6228 TRANSISTOR A7h PDF

    HX6856

    Abstract: No abstract text available
    Text: b3E » Honeywell 4551Ö72 OGODTTS S71 • H 0 N 3 Military Products HON E Y I i J E L L / S S E C Preliminary 32K X 8 RADIATION-HARDENED STATIC RAM-SOI HX6856 FEATURES RADIATION OTHER Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 urn Process


    OCR Scan     		1x10s 1x101 HX6856 36-Lead 28-Lead HX6856/1 HX6856/2 HX6856 PDF

    Untitled

    Abstract: No abstract text available
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 30 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead 40-Lead PDF

    Untitled

    Abstract: No abstract text available
    Text: HLX6228 Military & Space Products 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 35 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead 40-Lead PDF

    D-10

    Abstract: HLX6256 CDIP2-T28 nmos dynamic ram 6256
    Text: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		HLX6256 1x106 1x1014 1x109 1x1011 1x10-10 D-10 HLX6256 CDIP2-T28 nmos dynamic ram 6256 PDF

    hlx6256

    Abstract: D-10 nmos dynamic ram 6256 dynamic ram nmos 6256
    Text: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		HLX6256 1x106 1x1014 1x109 1x1011 1x10-10 hlx6256 D-10 nmos dynamic ram 6256 dynamic ram nmos 6256 PDF

    D-10

    Abstract: HLX6256
    Text: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		HLX6256 1x106 1x1014 1x109 1x1011 1x10-10 D-10 HLX6256 PDF

    HX6408

    Abstract: No abstract text available
    Text: Honeywel Advance Information Aerospace Electronics HX6408 512K x 8 STATIC RAM— SOI FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 2 5 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 |a,m Process (Leff = 0.28 |a,m)


    OCR Scan     		1x101 36-Lead HX6408 HX6408 PDF