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    CBEA

    Abstract: register type register Sony Computer Entertainment
    Text: SPU Assembly Language Specification Version 1.7 CBEA JSRE Series Cell Broadband Engine Architecture Joint Software Reference Environment Series July 18, 2008 Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba


    Original     		PDF

    STR G 6351

    Abstract: db16cyc cell broadband TH1000 TH1010 sfh 6176 CBEA
    Text: C/C+ Language Extensions for Cell Broadband Engine Architecture Version 2.6 CBEA JSRE Series Cell Broadband Engine Architecture Joint Software Reference Environment Series August 25, 2008 Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba


    Original     		PDF

    ci cd 4058

    Abstract: MFC 4040 Tag 225 600 replacement 9c301 X00001000 X1E0000 511000 dram CBEA 511C5 mic 342
    Text: Title Page Cell Broadband Engine Registers Version 1.51 September 18, 2007 Copyright and Disclaimer Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba Corporation 2005, 2007 All Rights Reserved Printed in the United States of America Sptember 2007


    Original     		PDF

    CXK581000M

    Abstract: CXK581000P 15L15LL
    Text: 54E D • &3B23&3 000475b TTT I SONY C X K 581000P/M SONY. -10L712U15L -10LLV12LU/15LL 131072-word X 8-bit High Speed CMOS Static RAM SONY C O R P / C O M P O N E N T PRODS Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8


    OCR Scan     		PDF 3fl23fl3 000475b CXK581000P/M 10U12U15L -10LL712LL715LL CXK581000P CXK581000M 131072-word CXK581000P/M-1OL/1OLL 15L15LL

    Untitled

    Abstract: No abstract text available
    Text: 5 ME » Ô3fl23fl3 OGG^GO 718 • S 0 N Y /^ r ^ _ ¿ 2¿>^/y C X K 7791 O J SONY 131072 words X - 17/20 9-bit Self-Timed Static Random Access Memory SONY CORP/COMPONENT PRODS Description The CXK7791 OJ is a 1,179,648 bit Self-Timed Static Random Access Memory organized as 128K words by 9


    OCR Scan     		PDF 3fl23fl3 CXK7791 CXK77910J T-46-23-1A 400mi SOJ-3-2P-01

    Sony CMOS

    Abstract: CXK581000M CXK581000P CXK581000
    Text: S4E D SONY, Û3Ô53Ô3 00D47b? 7fl5 «SONY C X K 581O O O P / M ÌoLLX/?2LLX^5LLX 131072-word X 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT PROPS Description The C X K 5 8 1 0 0 0 P /M is a general purpose high speed CMOS static RAM organized as 131072 words by 8 bits. Operating on a single


    OCR Scan     		PDF 00D47b? cxk581ooop/m -1OLX/12LX/15LX/ 10LLX/12LLX/15LLX 131072-word CXK581 CXK581000P CXK581000M CXK581000P/M-1 100ns Sony CMOS CXK581000

    Untitled

    Abstract: No abstract text available
    Text: SONY C O R P / C O M P O N E N T PRO DS fl3fl23fl 3 0 0 0 3 ^1 4 7 • SONY SOE D CXB1137Q/Q-Y SO N Y . 8-bit Shift Matrix Description Pin Assignm ent The C X B 1 1 3 7 Q is an ultra high speed m onolithic E C L 8-bit Shift M a trix Three Select Sn inputs


    OCR Scan     		PDF 3fl23fl CXB1137Q/Q-Y 24pin QFP-24M-S01) 32pin QFP-32C-L01) 32pin QFP-32M-L02)

    PE9071

    Abstract: CXK77910J-17 CXK77910J-20 CXK7791OJ
    Text: CXK77910J SONY. - 131072 words x 9-bit Self-Timed Static Random Access Memory 17/20 Preliminary Description The CXK77910J is a 1,179,648 bit Self-Timed Static Random Access Memory organized as 128K words by 9 bits. This STRAM integrates Input Registers, High Speed


    OCR Scan     		PDF cxk7791oj CXK7791 CXK77910J SOJ-32P-0 SOJ032-P-0e00-A PE9071 CXK77910J-17 CXK77910J-20

    CXK27C1000DQ-15

    Abstract: 12.75V PGM 1N914 CXK27C1000DQ-20 CXK27C1000DQ
    Text: CXK27C1OOODQ SONY. - 15/20 131072-word X 8-bit Ultraviolet Erasable CMOS PROM Description The CXK27C1 OOODQ ¡is an electrically programmable, ultraviolet erasable CMOS EPROM. The adoption o f CMOS fo r the peripheral circuits allows fo r high speed operation and low power


    OCR Scan     		PDF cxk27c1ooodq 131072-word CXK27C1 CXK27C1000DQ-15 150ns CXK27C1000DQ-20 200ns CXK27C1000DQ P-32C-161 12.75V PGM 1N914 CXK27C1000DQ

    Untitled

    Abstract: No abstract text available
    Text: CXK77910J SONY» 131072 words x 9-bit Self-Timed Static Random Access Memory -17/20 PrelifTlinQry Description The CXK77910J is a 1,179,648 bit Self-Timed Static Random Access Memory organized as 128K words by 9 bits. This STRAM integrates Input Registers, High Speed


    OCR Scan     		PDF CXK77910J CXK77910J CXK7791OJ 32pin

    P0820A

    Abstract: No abstract text available
    Text: SONY CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by CXK581000ATM CXK581000AYM 32 pin TSOP Plastic 32 pin TSOP (Plastic)


    OCR Scan     		PDF CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word 131072-words -55LL755SL -70LL770SL -10LL710SL P0820A

    Untitled

    Abstract: No abstract text available
    Text: SONY CXP875P40 CMOS 8-bit Single Chip Microcomputer Description The CXP875P40 is a CMOS 8-bit micro-computer which consists of arithmetic coprocessor, A/D converter, serial interface, timer/counter, time base timer, vector interruption, high precision timing


    OCR Scan     		PDF CXP875P40 CXP875P40 CXP8753 D01R330 100PIN QFP-100P-L01 QFP100-P-1420-A

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATM/AYM/AM/ATN/AYN is a high speed CMOS static RAM organized as 131072words by 8-bits. Special feature are low power consumption and high speed.


    OCR Scan     		PDF CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word CXK5T81 131072words -10LLX -12LLX

    IJ01

    Abstract: CXK581000AYM CXK581OQOATM CXKS81003ATM SCHB
    Text: SONY CXK581OOOATM/AYM/AM -10LLB 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOATM/AYM/AM is a high speed CMOS static RAM organized as 131072 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data


    OCR Scan     		PDF CXK581OOOATM/AYM/AM -10LLB 131072-word CXK581OQOATM CXK581000AYM CXK561OOOAM CXK581 150ns 100ns IJ01 CXKS81003ATM SCHB

    Untitled

    Abstract: No abstract text available
    Text: CXK77910J SONY 17/20 131072 words x 9-bit Self-Timed Static Random Access Memory Description Th e C X K 77910J is a 1,179,648 bit Self-Timed Static Random Access Memory organized as 128K words by 9 bits. This S TR A M integrates Input Registers, High Speed


    OCR Scan     		PDF CXK77910J 77910J 32pin 400mil SOJ-32P-

    A13G

    Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
    Text: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and


    OCR Scan     		PDF CXK5T81OOOATN/AYN 131072-word CXK5T81 131072-words -10LLX -12LLX -10LLX 100ns A13G CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe

    Untitled

    Abstract: No abstract text available
    Text: C X K 58110OTM/YM -12LB SONY 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. CXK581100TM 32 pin T SO P Plastic CXK581100YM 32 pin T SO P (Plastic)


    OCR Scan     		PDF 58110OTM/YM -12LB 131072-word CXK581100TM/YM CXK581100TM CXK581100YM CXK581100TM: CXK581100YM: CXK581

    Untitled

    Abstract: No abstract text available
    Text: SONY | CXK5T81OOOATN/AYN - 1 O L L X /1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK5T81 OOOATN/AYN is a high speed CMOS static RAM organized as 131072-words by 8-bits. Special feature are low power consumption and


    OCR Scan     		PDF CXK5T81O 131072-word CXK5T81 131072-words -10LLX 100ns 120ns -12LLX

    icc3 icc1

    Abstract: No abstract text available
    Text: SONY CXK581OOOATM/AYM/AM -10LLB 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOATM/AYM/AM is a high speed CMOS static RAM organized as 131072 words by 8 bits. A polysilicon T F T cell technology realized extremely low stand-by current and higher data


    OCR Scan     		PDF CXK581OOOATM/AYM/AM -10LLB 131072-word CXK581 150ns 100ns T50P-MP-L01R TS0PQ32-P-GN0-6 Q01bb70 icc3 icc1

    c00f

    Abstract: No abstract text available
    Text: CXK58110OTM/YM •12LB SONY« 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. C X K 581100TM 32 pin TSO P Plastic C XK 58110OYM 32 pin TSO P (Plastic)


    OCR Scan     		PDF CXK58110OTM/YM 581100TM 58110OYM 131072-word CXK581100TM/YM CXK581100TM: CXK581100YM: CXK581100TM CXK581 CXK581100YM c00f

    CXK581020A

    Abstract: CXK581020AJ-25 SCU032-P-C400-A
    Text: SONY C X K 581020A J • ” *» 131072-words x 8-bits High Speed CMOS Static RAM Description 32 pin SO J Plastic The CXK581020AJ is a high speed CMOS static RAM organized as 131072-words by 8 bits. It operates at 20ns/25ns access time from 5V single power supply.


    OCR Scan     		PDF 81020A 131072-words CXK581020AJ 20ns/25ns CXK581Q20AJ-20 CXK581020AJ-25 CXK581020AJ-20 990mW CXK581020A SCU032-P-C400-A

    sony 5v

    Abstract: "Pin compatible" SONY 32PIN CXK581120AJ-12 CXK581120AJ-15 Sony CMOS Sony
    Text: SONY CXK581120AJ 131072-wards x 8-bits High Speed CMOS Static RAM - 12/15 Preliminary Description The CXK581120AJ is a high speed 1M bit CMOS static RAM organized as 131072 words by 8 bits. It operates at 12ns/15ns access time from a single 5V power supply, utilizing center-ground/power pin


    OCR Scan     		PDF CXK581120AJ 131072-words CXK5S1120AJ 12ns/15ns CXK581120AJ-12 CXK581120AJ-15 CXK581120AJ-15 sony 5v "Pin compatible" SONY 32PIN Sony CMOS Sony

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK5V81OOOATM -8 5 L L X /1 0 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data


    OCR Scan     		PDF CXK5V81OOOATM 131072-word CXK5V81000ATM 131072-words CXK5V81 -85LLX 03fl23fi3 TSOP-32P-L01 TSOP032-P-0820-A

    Untitled

    Abstract: No abstract text available
    Text: SONY. CXK581OOOP/M -10LU12LL715LL 10L712L715L 131072-word X 8-bit High Speed CMOS Static RAM D escription CXK581 OOOP/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low


    OCR Scan     		PDF CXK581OOOP/M -10LU12LL715LL 131072-word CXK581 CXK581000P/M-10L/1OLL 100ns CXK581000P/M-12L/12LL 120ns CXK581000P/M-15L/15LL 150ns