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    CXK58257P

    Abstract: SONY CX 12LU Sony 187 sony cxk58257m-12l
    Text: SONY CORP/COMPONENT PRODS HTE 1> Ô3Ô2363 CXK58257P/SP/M SONY üüOBb37 5 WSONY 70L/85L/10L/12L 70LL/85LL/10LL/12LL 32768-word X 8 bit High Speed CMOS Static RAM Package Outline Description Unit: mm CXK58257P/SP/M is a 2 6 2 ,1 4 4 bits high speed CMOS static RAM organized as 3 2 ,7 6 8 words by


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    PDF CXK58257P/SP/M 70L/85L/10L/12L 70LL/85LL/10LL/12LL 32768-word CXK58257P/SP/M CXK58257P/SP/Mâ 120ns CXK58257P SONY CX 12LU Sony 187 sony cxk58257m-12l

    t462

    Abstract: sony cxk58257m-12l CXK58257AP T46-2 CXK* Sony
    Text: S4E SONY« D 0302303 000Mb37 0L7 « S O N Y CXK58257AP/ASP/AM •7 0L/85L/10L/12L -70LL/85LL/1OLL/12LL* 32768-word x 8-bit High Speed CMOS Static RAM ‘ SONY C O R P / C O M P O N E N T PR OD S Description CXK58257AP 28 pin DIP Plastic C X K 5 8 2 5 7 A P /A S P /A M is 262,144 bits high


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    PDF 3fl23fl3 0004b37 CXK58257AP/ASP/AM: 32768-word CXK58257AP/ASP/AM 300mil CXK58257AP/ASP/AM-70L, CXK58257AP/ASP/AM-85L, CXK58257AP/ 100ns t462 sony cxk58257m-12l CXK58257AP T46-2 CXK* Sony

    P0820A

    Abstract: No abstract text available
    Text: SONY CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by CXK581000ATM CXK581000AYM 32 pin TSOP Plastic 32 pin TSOP (Plastic)


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    PDF CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word 131072-words -55LL755SL -70LL770SL -10LL710SL P0820A

    Untitled

    Abstract: No abstract text available
    Text: SONY. CXK581001 P/M 70LL785LL 131,072-word x 8-bit High Speed CMOS Static RAM D escription CXK581001 P/M is a 1,048,576 bits high speed CMOS static RAMs organized as 131,072 words by 8-bit and CXK581001P 32 pin DIP Plastic CXK581001M 32 pin SOP (Plastic)


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    PDF CXK581001 70LL785LL 072-word CXK581001P CXK581001M CXK581001P/M-70L/70LL CXK581001P/M-85L/85LL CXK581001P/M -70LL/85LL

    IJ01

    Abstract: CXK581000AYM CXK581OQOATM CXKS81003ATM SCHB
    Text: SONY CXK581OOOATM/AYM/AM -10LLB 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOATM/AYM/AM is a high speed CMOS static RAM organized as 131072 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data


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    PDF CXK581OOOATM/AYM/AM -10LLB 131072-word CXK581OQOATM CXK581000AYM CXK561OOOAM CXK581 150ns 100ns IJ01 CXKS81003ATM SCHB

    Untitled

    Abstract: No abstract text available
    Text: Sony. CXK 58110O TM /YM IS Ö W 131072-word X 8-bit High Speed CMOS Static RAM D escription CXK58110OTM/YM is a 1M bits, 131072 words by 8 bits, CMOS static RAM. It is suitable for portable and CXK581100TM 32 pin TSOP Plastic CXK581100YM 32 pin TSOP (Plastic)


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    PDF 58110O CXK581100TM 131072-word CXK58110OTM/YM CXK581100YM CXK581100TM CXK581100VM CXK581100TM/YM-10L, -10LL CXK5811lative

    XTA11

    Abstract: icc3 icc1
    Text: Sony CXK581OOOATM/AM -70LLI/10LLI 131,072-word x 8-bit High-Speed CMOS Static RAM Description The CXK581 OOOATM/AM are high speed CM O S Static RAMs organized as 131,072-words-by-8-bits. A polysilicon TFT cell technology realizes extremely low stand-by current and higher data retention stability.


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    PDF CXK581OOOATM/AM -70LLI/10LLI 072-word CXK581 072-words-by-8-bits. XK581 100ns K581000ATM/AM CXK581000AM XTA11 icc3 icc1

    CXK584000M

    Abstract: CXK584000P DIP32-P-0600-A CXK584000 CXK584000TM
    Text: SONY CXK584000TM/YM/M/P i^ ^ io L L 524288-word x 8-bit High Speed CMOS Static RAM Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524288-word by 8-bits. Polysilicon TFT cell technology realized extremely low stand-by current and higher data


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    PDF CXK584000TM/YM/M/P 524288-word 100ns CXK584000TM/YM/M/P-55L/55LL CXK584000TM/YM/M/P-70L/70LL CXK584000TM/YM/M/P-1 -55L/70L/1 CXK584000M CXK584000P DIP32-P-0600-A CXK584000 CXK584000TM

    Untitled

    Abstract: No abstract text available
    Text: SONY« 8192 word X CXK5863AP/AJ 8-bit High Speed CMOS Static RAM D escription C XK 5863A P /A J are 65,536 bits high speed CMOS static RAMS organized as 8,192 words by 8-bits and operate from a single 5V supply. These devices are suitable fo r use' in high


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    PDF CXK5863AP/AJ CXK5863AP 250mW 300mcycle K5863AP 28pin CXK5863AP P-28P-06

    8257A

    Abstract: 58257A
    Text: SONY. CXK58257ATM/AYM •12LB 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257ATM/AYM is a 256K bits, 32768 words by 8 bits, CMOS static RAM. Operating on a single 2.7 to 5.5V supply. It is suitable for portable and battery back-up systems which require extremely small package and low


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    PDF CXK58257ATM/AYM 32768-word CXK58257ATM/AYM CXK58257ATM CXK58257AYM CXK58257ATM: CXK58257AYM: 240ns 120ns 8257A 58257A

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK581OOOP/M -12LB 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOP/M is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. Operating on a single 2.7 to 5.5V supply, this asynchronous IC is suitable for high speed and low


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    PDF CXK581OOOP/M -12LB 131072-word CXK581 CXK581000P XK581000M 240ns 120ns K581000P/M

    sony cx 168

    Abstract: No abstract text available
    Text: 54E So n y. î 03Û23Ô3 DDDMbS? Ì5 S ISONY CXK58257AP/AM -70U</85LX/10LX/12LX -70LLX/85LLX/1OLLX/12LLX * 32768-word x 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT PRODS Description CXK58257AP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and


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    PDF CXK58257AP/AM -70LLX/85LLX/1OLLX/12LLX 32768-word CXK58257AP CXK58257AM CXK58257AP/AM-70LX 70LLX CXK58257AP/AM-85LX 85LLX sony cx 168

    CXK58257ATM

    Abstract: No abstract text available
    Text: CXK58257ATM/AYM -70LL/85LL/1 -70L/85U10LOLL/12LL /12L SONY 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 32,768 w ords by 8 bits, CMOS static RAM.; It is suitable fo r portable and battery back-up


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    PDF 32768-word CXK58257ATM/AYM -70LL/85LL/1 OLL/12LL CXK58257ATM CXK58257AYM K58257ATM XK58257AYM K58257ATM XK58257ATM

    DIP-32P-01

    Abstract: No abstract text available
    Text: SONY CXK581001 P/M 70LU85LL 131,072-word X 8-bit High Speed CMOS Static RAM D escription CXK581001P/M is a 1,048,576 bits high speed CMOS static RAMs organized as 131,072 words by 8-bit and operates from a single 5V supply. This 1C is suitable for use in high speed and low power applications in which


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    PDF CXK581001 70LU85LL CXK581001P CXK581001M 072-word CXK581001P/M CXK581001P/M-70L/70LL CXK581001P/M-85L/85LL -70L/85L DIP-32P-01

    Untitled

    Abstract: No abstract text available
    Text: OL/12L SONY. CXK58267ATM/AYM -70LV85L/1 -70LL/85LL71OLL/12LL 32768-word X 8-bit High Speed C M O S Static RAM D escription C X K 582 67A T M /A Y M is a 256K bits, 32768 words by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up systems which


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    PDF CXK58267ATM/AYM -70LV85L/1 OL/12L -70LL/85LL71OLL/12LL 32768-word CXK58267ATM CXK58267AYM CXK58267ATM

    CXK5863AJ

    Abstract: CXK5863AP OIP028-P-0300-A
    Text: SONY CXK5863AP/AJ - 20/ 25/30 8192 word x 8-bit High Speed CMOS Static RAM Description C X K 5863A P /A J are 65,536 bits high speed CMOS static RAMS organized as 8,192 words by 8-bits and operate from a single 5V supply. These devices are suitable fo r u s e 'in high


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    PDF CXK5863AP/AJ CXK5863AP/AJ 20ns/25ns/30ns 250mW CXK5863AP 300mil 28pin CXK5863A CXK5863AJ OIP028-P-0300-A

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK58257ATM/AYM -12LB 32768-word x 8-bit High Speed CM OS Static RAM D escription CXK58257ATM/AYM is a 256K bits, 32768 words by 8 bits, CMOS static RAM. Operating on a single 2.7 to 5.5V supply. It is suitable for portable and battery back-up systems which require extremely small package and low


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    PDF CXK58257ATM/AYM -12LB 32768-word K58257ATM CXK58257AYM CXK58257ATM: CXK58257AYM: 240ns 120ns

    METRIX

    Abstract: IGZO e89y
    Text: CXK581001 P/M 70LL785LL SONY. 131,072-word x 8-bit High Speed CMOS Static RAM Description CXK581001 P/M is a 1,048,576 bits high speed CMOS static RAMs organized as 131.072 words by 8-bit and operates from a single 5V supply. This IC is suitable for use in high speed and low power applications In which


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    PDF CXK581001 70LL785I 072-word CXK581001P/M CXK581001P/M-701/70LL CXK581001P/M-85L/85LL 70L/85L -70LL/85LL METRIX IGZO e89y

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK5863AP/AJ -20/25/30 8192 word X 8-bit High Speed CMOS Static RAM D escription C X K 5863A P /A J are 65,536 bits high speed CMOS static RAMS organized as 8,192 words by 8-bits and operate from a single 5V supply. These devices are suitable fo r use in high


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    PDF CXK5863AP/AJ CXK5863AP 250mW K5863AP 28pin CXK5863AJ 300mil J-28P-01 -077-AB

    Untitled

    Abstract: No abstract text available
    Text: 54E D • 0305303 DQGMbflb 75b « S O N Y CXK58257ATM/AYM - 1 2 L B SONY« 32768-word x 8-bit High Speed CMOS Static RAM S ONY CORP/COHPONENT PRODS Description CXK58257ATM/AYM is a 256K bits, 32768 words by 8 bits, CMOS static RAM. Operating on a single 2.7 to 5.5V


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    PDF CXK58257ATM/AYM 32768-word XK58257ATM K58257AY CXK58257ATM: CXK58257AYM: CXK58257ATM CXK58257ATM CXK58257AYM

    I5B2

    Abstract: CXK581000P 15L15LL
    Text: SONY. CXK581000P/M -10LU^2LL/1~5LL 131072-word X 8-bit High Speed CMOS Static RAM D e s c rip tio n CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low


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    PDF CXK581OOOP/M -10U1l2U15L -10LL/12LL/15LL 131072-word CXK581 CXK581000P/M-10L/1OLL 100ns CXK581000P/M-12L/12LL 120ns CXK581000P/M-15L/15LL I5B2 CXK581000P 15L15LL

    YM12L

    Abstract: No abstract text available
    Text: sony . CXK58110OTM/YM : ! S M W 131072-word x 8-bit High Speed CMOS Static RAM D e s c r ip tio n CXK5811OOTM/YM is a 1M bits, 131072 words by 8 bits, CMOS static RAM. It is suitable for portable and battery back-up systems which require extremely small package and low stand-by current.


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    PDF CXK58110OTM/YM 131072-word CXK5811OOTM/YM CXK581100TM CXK581100YM CXK581100TM/YM-10L, CXK58110OTM CXK581 CXK58110OYM YM12L

    CXK581000P

    Abstract: P-32P-01
    Text: SONY CXK581OOOP/M 10LLX/12LLX/VöLLX 131072-word X 8-bit High Speed C M O S Static RAM Description The CXK581 O O O P/M is a general purpose high speed CMOS static RAM organized as 131072 words by 8 bits. Operating on a single 5V supply, this asynchronous 1C is suitable for


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    PDF cxk581ooop/m 131072-word CXK581 000P/M-1 OLX/10LLX 100ns 120ns CXK581000P P-32P-01

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK58257P/SP/M 32768-word X 8 bit High Speed CMOS Static RAM P ackage O u tlin e D e scrip tio n Unit: mm CXK58257P/SP/M is a 2 6 2 ,1 4 4 bits high speed CMOS static RAM organized as 3 2 ,7 6 8 words by 8 bits and operates from a single 5V supply. This


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    PDF CXK58257P/SP/M 32768-word CXK58257P/SP/M CXK58257P/SP/Mâ 100ns 120ns CXK58257P/SP/M-70LU