Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating
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LBAS16LT1G
OT-23
3000/Tape
LBAS16LT3G
10000/Tape
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A6 sot-23
Abstract: BAS16 sot-23 cd 5411 marking 855 sot 353 MARKING 358 sot-23 BAS16
Text: BAS16 SOT 23 High Speed Switching Diodes Feature: • Silicon Planar Epitaxial High-Speed Diode. Package Outline Details Marking BAS16 = A6 Pin configuration 1 = Anode 2 = NC 3 = Cathode Dimensions : Millimetres Absolute Maximum Ratings Limiting values Symbol
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BAS16
A6 sot-23
BAS16 sot-23
cd 5411
marking 855 sot 353
MARKING 358 sot-23
BAS16
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PDF
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BAS16
Abstract: BAS16D
Text: BAS16D VISHAY Vishay Semiconductors Small Signal Diodes Features • Silicon Epitaxial Planar Diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 Mechanical Data Case: SOD-123 Plastic Case Weight: approx.10 mg Marking: A6
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BAS16D
OT-23
BAS16
OD-123
D3/10
D-74025
13-Jun-03
BAS16
BAS16D
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PDF
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BAS16
Abstract: BAS16WS
Text: BAS16WS VISHAY Vishay Semiconductors Small Signal Diodes Features • Silicon Epitaxial Planar Diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 Mechanical Data Case: SOD-323 Plastic Case Weight: approx. 4 mg Marking: A6
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BAS16WS
OT-23
BAS16
OD-323
D5/10
D-74025
24-Jun-03
BAS16
BAS16WS
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SMD DIODE A6 t SOT-23
Abstract: BAS16 sot-23 BAS16 SMD DIODE bas16 tp-20ns BAS16 SMD SOT23
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR SWITCHING DIODE BAS16 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS16 = A6 High-Speed Switching Diodes ABSOLUTE MAXIMUM RATINGS
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ISO/TS16949
BAS16
OT-23
C-120
BAS16
270304E
SMD DIODE A6 t SOT-23
BAS16 sot-23
SMD DIODE bas16
tp-20ns
BAS16 SMD SOT23
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Untitled
Abstract: No abstract text available
Text: MMBD2838 MMBD2838 Connection Diagram 3 3 3 A6. 2 1 2 1 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current
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MMBD2838
OT-23
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7121
Abstract: MMBD2838
Text: MMBD2838 MMBD2838 Connection Diagram 3 3 3 A6. 2 1 2 1 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current
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MMBD2838
OT-23
7121
MMBD2838
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBD2838 MMBD2838 Connection Diagram 3 3 3 A6. 2 1 2 1 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current
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MMBD2838
OT-23
MMBD2838,
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A6 sot-23
Abstract: MARKING A6 sot23 BAS16 A6 farnell BAS16 marking A6 sot-23
Text: 1621825 Features: • • • • Fast switching speed. For general purpose switching applications. High conductance. Marking: A6. SOT-23 Dimensions : Inches Millimetres Page <1> 07/07/08 V1.1 1621825 Maximum Ratings and Electrical Characteristics Rating at 25°C Ambient Temperature Unless Otherwise Specified.
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OT-23
A6 sot-23
MARKING A6 sot23
BAS16 A6
farnell
BAS16
marking A6 sot-23
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS16 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS16 = A6 High-Speed Switching Diodes ABSOLUTE MAXIMUM RATINGS
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BAS16
OT-23
C-120
BAS16
270304E
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS16 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS16 = A6 High-Speed Switching Diodes ABSOLUTE MAXIMUM RATINGS
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BAS16
OT-23
C-120
BAS16
270304E
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PDF
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8M SMD
Abstract: BAS16 MARKING A6 sot23 DIODE SMD A6
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS16 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS16 = A6 High-Speed Switching Diodes ABSOLUTE MAXIMUM RATINGS
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BAS16
OT-23
C-120
BAS16
270304E
8M SMD
MARKING A6 sot23
DIODE SMD A6
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A6 sot-23
Abstract: marking code A6 BAS16 SOT 23 marking code a6 diode
Text: BAS16 SWITCHING DIODE High-speed switching in hybrid thick and thin-film circuits applications 3 2 1 Marking Code: A6 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 85 V Continuous Reverse Voltage VR 75 V Continuous Forward Current
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BAS16
OT-23
A6 sot-23
marking code A6
BAS16
SOT 23 marking code a6 diode
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BC817 A6
Abstract: transistor 6c o25c BC817-40-6C BC817-16 BC817-25 BC817-40 A66B
Text: BC817-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SOT-23 SIGANL TRANSISTORS 3 1 2 Marking A6/6B/6C o ABSOLUTE MAXIMUM RATINGS Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V CBO 5.0
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BC817-16/-25/40
OT-23
Group-16
BC817 A6
transistor 6c
o25c
BC817-40-6C
BC817-16
BC817-25
BC817-40
A66B
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SMD DIODE A6 t SOT-23
Abstract: CMBD2838 CMBD2837 MARKING A6 sot23 SMD DIODE A6 t
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2837 CMBD2838 3 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 Marking CMBD2837 - A5 CMBD2838 - A6 High-Speed Switching Dual Diodes, Common Cathode
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ISO/TS16949
CMBD2837
CMBD2838
OT-23
CMBD2837
CMBD2838
C-120
SMD DIODE A6 t SOT-23
MARKING A6 sot23
SMD DIODE A6 t
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BAS16
Abstract: BAS16 fairchild
Text: BAS16 BAS16 Connection Diagram 3 3 3 A6 2 1 2 1 1 2NC SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 85 V IF AV Average Rectified Forward Current 200
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BAS16
OT-23
BAS16
BAS16 fairchild
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BAS16
Abstract: No abstract text available
Text: BAS16 Discrete POWER & Signal Technologies N BAS16 CONNECTION DIAGRAM 3 3 3 A6 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV
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BAS16
OT-23
BAS16
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BAS16 fairchild
Abstract: fairchild bas16 A6 DIODE bas16 a6 DIODE A6 BAS16 BAV99 a6 bas16
Text: BAS16 CONNECTION DIAGRAM 3 3 3 A6 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV Working Inverse Voltage
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BAS16
OT-23
BAV99
BAS16 fairchild
fairchild bas16
A6 DIODE
bas16 a6
DIODE A6
BAS16
a6 bas16
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transistor BC 310
Abstract: 6C TRANSISTOR MARKING BC817-16 BC817-25 BC817-40 A66B
Text: BC817-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SOT-23 SIGANL TRANSISTORS 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A6/6B/6C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage
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BC817-16/-25/40
OT-23
Group-16
transistor BC 310
6C TRANSISTOR MARKING
BC817-16
BC817-25
BC817-40
A66B
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Untitled
Abstract: No abstract text available
Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code
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Si2306DS
O-236
OT-23)
Si2306DS-T1
08-Apr-05
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A6 marking
Abstract: Si2306DS Si2306DS-T1
Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code
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Si2306DS
O-236
OT-23)
Si2306DS-T1
25lectual
18-Jul-08
A6 marking
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PDF
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Si2306DS
Abstract: No abstract text available
Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V "3.5 0.094 @ VGS = 4.5 V "2.8 – TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2306DS
O-236
OT-23)
S-56945--Rev.
23-Nov-98
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SOT 23 marking code a6 diode
Abstract: Si2306DS Si2306DS-T1
Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code
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Si2306DS
O-236
OT-23)
Si2306DS-T1
S-31873--Rev.
15-Sep-03
SOT 23 marking code a6 diode
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1N4150
Abstract: BAS16 BAV99 MMBD1201 A6 SOT-23
Text: BAS16 BAS16 CONNECTION DIAGRAM 3 3 3 A6 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV Working Inverse Voltage
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BAS16
OT-23
BAV99
1N4150
BAS16
MMBD1201
A6 SOT-23
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