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    SOT 23-5 MARKING SA Search Results

    SOT 23-5 MARKING SA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 23-5 MARKING SA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zener 5A6 ON

    Abstract: SOT-23 MARKING PW sot-23 Marking 27A E MMBZ6V8ALT1G mmbz5v6alt1g SOT-23 marking 21 marking 33a zener sot23 MARKING 6A8 SOT SZMMBZ5 MMBZ18VALT
    Text: MMBZxxxALT1G Series, SZMMBZxxxALT1G Series 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They


    Original     		PDF OT-23 zener 5A6 ON SOT-23 MARKING PW sot-23 Marking 27A E MMBZ6V8ALT1G mmbz5v6alt1g SOT-23 marking 21 marking 33a zener sot23 MARKING 6A8 SOT SZMMBZ5 MMBZ18VALT

    SBC846B

    Abstract: BC850BLT1G marking 1a bc847blt1g SBC847BLT1 SBC846ALT1G SERIES SBC846ALT1G 1G t 90 SOT-23 SBC847C
    Text: BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • • ESD Rating − Machine Model: >400 V AEC−Q101 Qualified and PPAP Capable


    Original     		PDF BC846ALT1G SBC846ALT1G AEC-Q101 BC846, SBC846 BC847, BC850, SBC847 BC848, BC849, SBC846B BC850BLT1G marking 1a bc847blt1g SBC847BLT1 SBC846ALT1G SERIES 1G t 90 SOT-23 SBC847C

    Untitled

    Abstract: No abstract text available
    Text: MUN2116, MMUN2116L, MUN5116, DTA143TE, DTA143TM3 Digital Transistors BRT R1 = 4.7 kW, R2 = 8 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF MUN2116, MMUN2116L, MUN5116, DTA143TE, DTA143TM3 DTA143T/D

    Untitled

    Abstract: No abstract text available
    Text: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 DTA144E/D

    Untitled

    Abstract: No abstract text available
    Text: MUN2115, MMUN2115L, MUN5115, DTA114TE, DTA114TM3, NSBA114TF3 Digital Transistors BRT R1 = 10 kW, R2 = 8 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2115, MMUN2115L, MUN5115, DTA114TE, DTA114TM3, NSBA114TF3 DTA114T/D

    SMMUN2233LT1G

    Abstract: SMMUN2211LT SMMUN2216LT1 NSVMMUN2232LT1G MMUN2215LT1G MMUN2230LT1G MMUN2233LT1G MARKING A8C SOT-23
    Text: MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network http://onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF MMUN2211LT1G SMMUN2211LT1G NSVMMUN2232LT1G OT-23 MMUN2211LT1/D SMMUN2233LT1G SMMUN2211LT SMMUN2216LT1 MMUN2215LT1G MMUN2230LT1G MMUN2233LT1G MARKING A8C SOT-23

    SBCX19LT1G

    Abstract: SBCX19
    Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, AEC-Q101 OT-23 O-236) BCX17, BCX19 BCX18 SBCX19LT1G SBCX19

    m6g transistors marking code

    Abstract: m6g marking code m6g marking sot23 SMMBF4391LT1G marking 6j M6G sot 23 marking code m6g m6g sot23 marking m6g MMBF4393
    Text: MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel 3 Features 1 • S Prefix for Automotive and Other Applications Requiring Unique • 2 Site and Control Change Requirements; AEC−Q101 Qualified and


    Original     		PDF MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G OT-23 AEC-Q101 MMBF4391LT1/D m6g transistors marking code m6g marking code m6g marking sot23 SMMBF4391LT1G marking 6j M6G sot 23 marking code m6g m6g sot23 marking m6g MMBF4393

    SCV431A

    Abstract: marking RAE TLV431BSN1T1G mc7805
    Text: TLV431A, TLV431B, SCV431A Low Voltage Precision Adjustable Shunt Regulator The TLV431A and B series are precision low voltage shunt regulators that are programmable over a wide voltage range of 1.24 V to 16 V. The TLV431A series features a guaranteed reference accuracy


    Original     		PDF TLV431A, TLV431B, SCV431A TLV431A TLV431B TLV431A/D marking RAE TLV431BSN1T1G mc7805

    BSS84LT1

    Abstract: No abstract text available
    Text: BSS84LT1 Preferred Device Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load


    Original     		PDF BSS84LT1 r14525 BSS84LT1/D BSS84LT1

    MMBT918LT1G

    Abstract: MMBTA92LT3 MMBT918LT1 2m3b marking code 17 SOT-23
    Text: MMBT918LT1 VHF/UHF Transistor NPN Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage


    Original     		PDF MMBT918LT1 MMBT918LT1/D MMBT918LT1G MMBTA92LT3 MMBT918LT1 2m3b marking code 17 SOT-23

    NVR1P02T1G

    Abstract: No abstract text available
    Text: NTR1P02T1, NVR1P02T1 Power MOSFET −20 V, −1 A, P−Channel SOT−23 Package Features • Ultra Low On−Resistance Provides Higher Efficiency • • • • • and Extends Battery Life RDS on = 0.180 W, VGS = −10 V RDS(on) = 0.280 W, VGS = −4.5 V


    Original     		PDF NTR1P02T1, NVR1P02T1 OT-23 AEC-Q101 NTR1P02T1/D NVR1P02T1G

    MMBD914LT1G

    Abstract: SMMBD914LT1G
    Text: MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G High-Speed Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  SOT−23 CASE 318 STYLE 8 Site and Control Change Requirements


    Original     		PDF MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G AEC-Q101 OT-23 MMBD914LT1/D MMBD914LT1G SMMBD914LT1G

    SBAT54ALT1G

    Abstract: No abstract text available
    Text: BAT54ALT1G, BAT54ALT3G, SBAT54ALT1G, SBAT54ALT3G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


    Original     		PDF BAT54ALT1G, BAT54ALT3G, SBAT54ALT1G, SBAT54ALT3G BAT54ALT1/D SBAT54ALT1G

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC1G332 www.ti.com SCES489E – SEPTEMBER 2003 – REVISED DECEMBER 2013 Single 3-Input Positive-OR Gate Check for Samples: SN74LVC1G332 FEATURES DESCRIPTION • The SN74LVC1G332 device performs the Boolean Y + A B ) C or Y + A • B • C function


    Original     		PDF SN74LVC1G332 SCES489E SN74LVC1G332 24-mA

    MMBT2222ALT1G

    Abstract: m1b marking mmbt222 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222ALT3 MMBT2222ALT3G MMBT2222LT1 MMBT2222LT3
    Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a COLLECTOR 3 Pb−Free Lead Finish MAXIMUM RATINGS Rating Symbol


    Original     		PDF MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1/D MMBT2222ALT1G m1b marking mmbt222 MMBT2222 MMBT2222A MMBT2222ALT3 MMBT2222ALT3G MMBT2222LT1 MMBT2222LT3

    marking code m1b

    Abstract: SMMBT2222ALT1G SMMBT2222A MMBT2222LT1-D MMBT2222AL on semiconductor marking code 1P MMBT2222ALT1G
    Text: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF MMBT2222L, MMBT2222AL, SMMBT2222AL AEC-Q101 OT-23 MMBT2222L marking code m1b SMMBT2222ALT1G SMMBT2222A MMBT2222LT1-D MMBT2222AL on semiconductor marking code 1P MMBT2222ALT1G

    transistor marking code 3EM SOT-23

    Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
    Text: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6


    Original     		PDF MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G AEC-Q101 OT-23 O-236) MMBTH10LT1/D transistor marking code 3EM SOT-23 NSVMMBTH10 MMBTH10LT1G transistor marking 3em transistor 3em Marking code mps

    BSS123LT1G

    Abstract: No abstract text available
    Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel


    Original     		PDF BSS123LT1G, BVSS123LT1G OT-23 AEC-Q101 BVSS123LT1G BSS123LT1/D BSS123LT1G

    sot-23 Marking M1F

    Abstract: SMMBT5551 SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l
    Text: MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements


    Original     		PDF MMBT5550L, MMBT5551L, SMMBT5551L AEC-Q101 MMBT5550 MMBT5551, SMMBT5551 sot-23 Marking M1F SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l

    SMMBD2837LT1G

    Abstract: MA6 diode MARKING CODE MA6
    Text: MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236AB


    Original     		PDF MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G AEC-Q101 OT-23 O-236AB) MMBD2838LT1G MMBD2837LT1/D MA6 diode MARKING CODE MA6

    MGSF2N02EL

    Abstract: MGSF2N02ELT1 MGSF2N02ELT3 sot-23 Marking MC
    Text: MGSF2N02EL Power MOSFET 2.8 Amps, 20 Volts N–Channel SOT–23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. http://onsemi.com


    Original     		PDF MGSF2N02EL r14525 MGSF2N02EL/D MGSF2N02EL MGSF2N02ELT1 MGSF2N02ELT3 sot-23 Marking MC

    MVSF2N02EL

    Abstract: MVSF2N02ELT1G
    Text: MGSF2N02EL, MVSF2N02EL Power MOSFET 2.8 Amps, 20 Volts, N−Channel SOT−23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.


    Original     		PDF MGSF2N02EL, MVSF2N02EL OT-23 OT-23 MGSF2N02EL/D MVSF2N02ELT1G

    SI2304DS marking code SOT-23

    Abstract: A4* marking code A4 MARKING CODE
    Text: SÌ2304DS VISHAY Siliconix ▼ N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 30 TO-236 (SOT-23) Top View Si2304DS (A4)* *Marking Code A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N L E S S O T H E R W IS E N O T E D )


    OCR Scan     		PDF 2304DS O-236 OT-23) Si2304DS S-56945-- 23-Nov-98 SI2304DS marking code SOT-23 A4* marking code A4 MARKING CODE