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    SOT 2SC1623 Search Results

    SOT 2SC1623 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 2SC1623 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    m6 marking transistor sot-23

    Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER


    Original     		PDF OT-23 2SA812 OT-23 2SC1623 -100A, -100mA, -10mA m6 marking transistor sot-23 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER


    Original     		PDF OT-23 2SA812 OT-23 2SC1623 -100mA, -10mA

    MARKING l7

    Abstract: sot-23 l6 2SC1623 transistor marking L6 MARKING L4
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA


    Original     		PDF OT-23-3L OT-23-3L 2SC1623 100mA, MARKING l7 sot-23 l6 2SC1623 transistor marking L6 MARKING L4

    hFE-200

    Abstract: 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ)VCE=6V, z High voltage:VCEO=50V 1. BASE IC=1mA 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 2SC1623 100mA hFE-200 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23

    m6 marking transistor sot-23

    Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
    Text: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF 2SA812 OT-23 OT-23 2SC1623 -100A, -100mA, -10mA -10mA m6 marking transistor sot-23 transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 2SC1623 100mA

    2SC1623 sot-23

    Abstract: 2sc1623 sot-23 Marking L6 L6 TRANSISTOR marking L6 sot23 l4 sot-23 marking L6 marking transistor sot-23 npn sot23 l6 marking l4 sot-23 sot-23 Marking l7
    Text: 2SC1623 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High DC current gain :hFE=200(Typ)VCE=6V, High voltage:VCEO=50V — IC=1mA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF OT-23 2SC1623 OT-23 100mA 2SC1623 sot-23 2sc1623 sot-23 Marking L6 L6 TRANSISTOR marking L6 sot23 l4 sot-23 marking L6 marking transistor sot-23 npn sot23 l6 marking l4 sot-23 sot-23 Marking l7

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 100 mA ICM: Collector-base voltage 60 V V(BR)CBO:


    Original     		PDF OT-23 OT-23 2SC1623 100mA,

    MARKING L4

    Abstract: l4 transistor transistor marking L6 2SC1623 MARKING l7 L6 MARKING L6 TRANSISTOR
    Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage


    Original     		PDF OT-23-3L OT-23-3L 2SC1623 100mA, MARKING L4 l4 transistor transistor marking L6 2SC1623 MARKING l7 L6 MARKING L6 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range


    Original     		PDF OT-23-3L OT-23-3L 2SC1623 100mA,

    2SC162

    Abstract: 2SC1623
    Text: DC COMPONENTS CO., LTD. 2SC1623 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3


    Original     		PDF 2SC1623 OT-23 100mA, 2SC162 2SC1623

    2SC9014

    Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
    Text: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225


    Original     		PDF OT-23 2SC1623L3 BCW60A 2SC1623L4 BCW60B 2SC1623L5 BCW60C 2SC1623L6 BCW60D 2SC1623L7 2SC9014 BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551

    2SC1623 sot-23

    Abstract: 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7
    Text: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA


    Original     		PDF 2SC1623 OT-23 02-Aug-06 OT-23 2SC1623 sot-23 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7

    2SC1623K

    Abstract: SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE
    Text: 2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200 Typ , VCE=6V, IC=1mA. High Voltage:VCEO=50V. A L 3 3 C B Top View


    Original     		PDF 2SC1623K OT-23 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B 28-Jan-2011 2SC1623K SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE

    2sc1623

    Abstract: 3 pin mini mold transistor 2SC1623 sot 2sc1623 L5 SOT23-3
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC1623 Preliminary NPN SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD „ 3 2 DESCRIPTION SOT-23 The UTC 2SC1623 is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain


    Original     		PDF 2SC1623 OT-23 2SC1623 2SC1623G-x-AE3-R OT-23 2SC1623L-x-AE3-R 2SC1623L-x-AE3-R QW-R206-100 3 pin mini mold transistor 2SC1623 sot 2sc1623 L5 SOT23-3

    MARKING l7

    Abstract: l4 transistor 2SC1623 MARKING L4 transistor marking L6 L6 TRANSISTOR L6 IC marking L6
    Text: 2SC1623 SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 100 mA Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range


    Original     		PDF 2SC1623 OT-23-3L 100mA, MARKING l7 l4 transistor 2SC1623 MARKING L4 transistor marking L6 L6 TRANSISTOR L6 IC marking L6

    2SC1623

    Abstract: L4 SOT23-3 TRS1623
    Text: 2SC1623 TRS1623 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.2 W (Tamb=25 C) Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE


    Original     		PDF 2SC1623 TRS1623 OT-23 100mA, 2SC1623 L4 SOT23-3

    L4 SOT23-3

    Abstract: 2SC1623 npn sot23 l6 L5 SOT23-3
    Text: 2SC1623 TRS1623 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.2 W (Tamb=25 C) Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE


    Original     		PDF 2SC1623 TRS1623 OT-23 100mA, L4 SOT23-3 2SC1623 npn sot23 l6 L5 SOT23-3

    Untitled

    Abstract: No abstract text available
    Text: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 7 V Collector Current - Continuous IC 150 mA Total Device Dissipation FR-5 Board


    Original     		PDF 2SC1623 OT-23 30-Jul-10 OT-23

    smd transistor marking L6 NPN

    Abstract: SMD TRANSISTOR L6 smd transistor marking l6 smd transistor marking l7 marking L6 npn smd L7 smd transistor L6 smd transistor SMD TRANSISTOR MARKING l4 smd sot23 marking l6 smd marking l5
    Text: Transistors SMD Type NPN Silicon Transistor 2SC1623 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE = 200 TYP. 0.55 High DC Current Gain: +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 VCE = 6.0 V, IC = 1.0 mA +0.05 0.1-0.01 +0.1 0.97-0.1


    Original     		PDF 2SC1623 OT-23 smd transistor marking L6 NPN SMD TRANSISTOR L6 smd transistor marking l6 smd transistor marking l7 marking L6 npn smd L7 smd transistor L6 smd transistor SMD TRANSISTOR MARKING l4 smd sot23 marking l6 smd marking l5

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SC1623 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE = 200 TYP. 0.55 High DC Current Gain: +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 VCE = 6.0 V, IC = 1.0 mA +0.05 0.1-0.01 +0.1 0.97-0.1 High Voltage: 0-0.1


    Original     		PDF 2SC1623 OT-23

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SC1623 Preliminary NPN SILICON TRANSISTOR AU DI O FREQU EN CY GEN ERAL PU RPOSE AM PLI FI ER N PN SI LI CON T RAN SI ST OR M I N I M OLD 3 1 ̈ 2 DESCRI PT I ON SOT-23 The UTC 2SC1623 is a NPN silicon transistor using UTC’s


    Original     		PDF 2SC1623 OT-23 2SC1623 2SC1623L-x-AE3-R 2SC1623G-x-AE3-R QW-R206-100

    transistor cross reference

    Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
    Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER


    Original     		PDF OT-23 S9011 S9012 S9013 S9014 S9015 S9016 S9018 S8050 S8550 transistor cross reference transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent

    Untitled

    Abstract: No abstract text available
    Text: M C C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ 2SC1623 TRANSISTOR NPN 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES ^6%4rdlsslpation Pcm : 0.2 W (Tamb=25"C) Collector current ICM: H- 0.1A 2.4 Collector-base voltage V(br)cbo :60V Operating and storage Junction temperature range


    OCR Scan     		PDF OT-23 2SC1623