Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.1 A ICM: Collector-base voltage
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OT-323
OT-323
2SC3356
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR
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OT-323
OT-323
2SC3356
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PDF
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SOT R23
Abstract: 2SC3356 marking R24 r25 q
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, z Low Noise and High Gain z High Power Gain 3. COLLECTOR UHF and CATV band.
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OT-323
OT-323
2SC3356
width350s,
SOT R23
2SC3356
marking R24
r25 q
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PDF
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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STR2550
Abstract: STR1550
Text: STR2550 High voltage fast-switching PNP power transistor Preliminary data Features • Miniature SOT-23 plastic package for surface mounting circuits ■ Tape and reel packaging ■ The NPN complementary type is STR1550 3 2 1 Applications ■ SOT-23 LED driving
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STR2550
OT-23
STR1550
OT-23
R2550
STR2550
STR1550
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PDF
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SOT R23
Abstract: marking R24 2SC3356 SOT R25 r25 q
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR
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Original
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OT-23-3L
OT-23-3L
2SC3356
width350s,
SOT R23
marking R24
2SC3356
SOT R25
r25 q
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR
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OT-23-3L
OT-23-3L
2SC3356
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PDF
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sa1117h
Abstract: No abstract text available
Text: SA1117 1A LDO VOLTAGE REGULATOR DESCRIPTION The SA1117 is a positive low voltage dropout regulator, voltage dropoyut is only 1.2V at 1A. SA1117 has two versions: the fixed version and the adjustable SOT-89-3L SOT-223-3L version. VOUT has a tolerance of less than 1% for fixed versions
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SA1117
SA1117
OT-89-3L
OT-223-3L
O-220-3L
O-263-3L
O-252-2L
sa1117h
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current
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OT-23-3L
OT-23-3L
2SC3356
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PDF
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transistor R24
Abstract: SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23
Text: 2SC3356 SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 1.60 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SC3356
OT-23-3L
OT-23-3L
width350s,
transistor R24
SOT R23
npn marking r25
marking r25 transistor
marking r25 NPN
2sc3356
high power npn UHF transistor
2SC3356 R25 sot-23
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Untitled
Abstract: No abstract text available
Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER
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2SC3356
OT-23
QW-R206-024
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PDF
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2SC3356
Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER
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2SC3356
OT-23
QW-R206-024
2SC3356
marking r25 sot23
r25 marking
NPN R25
2SC3356 R25 sot-23
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PDF
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1117S
Abstract: 1117s 3.3 1117s adj 1117s 5.0 1117sadj 1117H-1 1117DADJ 1117s33 SA1117 1117-D33
Text: SA1117 1A LDO 稳压器电路 概述 SA1117是一款正电压输出的低压降三端线性稳压电 路，在1A输出电流下的压降为1.2V。 SOT-223-3L SOT-89-3L SA1117分为两个版本，固定电压输出版本和可调电 压输出版本。固定输出电压1.5V1.8V、2.5V、3.3V、
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SA1117
OT-223-3L
OT-89-3L
O-220-3L
O-263-3L
O-252-2L
1117S
1117s 3.3
1117s adj
1117s 5.0
1117sadj
1117H-1
1117DADJ
1117s33
SA1117
1117-D33
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marking r25 NPN
Abstract: NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W
Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES 2SC4226W Pb z Low noise. z High gain. z Power dissipation. PC=150mW Lead-free APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION Type No.
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2SC4226W
150mW)
OT-323
r23/r24/r25
BL/SSSTF042
marking r25 NPN
NPN R25
transistor code R24
R24 marking code transistor
SOT R23
npn marking r25
Transistor R25
R24 marking
SOT R25
2SC4226W
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Untitled
Abstract: No abstract text available
Text: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking
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FJV3105R
FJV4105R
OT-23
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marking r25
Abstract: transistor amplifier VHF/UHF NPN R25 hFE CLASSIFICATION Marking 24 2SC33 Transistor R25 R24 marking code transistor R24 marking DATASHEET SOT R23 SOT R25
Text: 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES A Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain
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2SC3356F
OT-323
01-June-2002
marking r25
transistor amplifier VHF/UHF
NPN R25
hFE CLASSIFICATION Marking 24
2SC33
Transistor R25
R24 marking code transistor
R24 marking DATASHEET
SOT R23
SOT R25
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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PDF
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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marking r25
Abstract: FJV3105R FJV4105R
Text: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking
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FJV3105R
FJV4105R
OT-23
marking r25
FJV3105R
FJV4105R
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PDF
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resistor cross reference
Abstract: marking r25 sot23 FJV3105RMTF
Text: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking
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FJV3105R
FJV4105R
OT-23
FJV4105R
OT-23
FJV3105RMTF
resistor cross reference
marking r25 sot23
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PDF
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2SC4226
Abstract: No abstract text available
Text: 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● ● ● SOT-323 Low noise High gain Power dissipation. PC=150mW A L 3 3 C B Top View
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2SC4226
OT-323
150mW)
2SC4226-P
2SC4226-Q
2SC4226-R
23-Apr-2013
2SC4226
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PDF
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2SC3356
Abstract: R24 marking DATASHEET r25 marking 2SC3356 Application Note Low Noise uhf transistor NPN R25 marking r25 sot23 r25 q
Text: 2SC3356 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Low Noise Amplifier at VHF, UHF and CATV band Low Noise and High Gain High Power Gain
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2SC3356
OT-23
16-Oct-2009
2SC3356
R24 marking DATASHEET
r25 marking
2SC3356 Application Note
Low Noise uhf transistor
NPN R25
marking r25 sot23
r25 q
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PDF
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Untitled
Abstract: No abstract text available
Text: STR2550 High voltage fast-switching PNP power transistor Datasheet - production data Features • Excellent hFE linearity up to 50 mA • Miniature SOT-23 plastic package for surface mounting circuits 3 • Tape and reel packaging 2 • The NPN complementary type is STR1550
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STR2550
OT-23
STR1550
OT-23
DocID022365
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PDF
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2sc4226
Abstract: NPN Silicon Epitaxial Planar Transistor 2SC4226 APPLICATION NOTES
Text: 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● ● ● SOT-323 Low noise High gain Power dissipation. PC=150mW A L 3 3 C B Top View
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2SC4226
OT-323
150mW)
2SC4226-P
2SC4226-Q
2SC4226-R
24-Feb-2011
2sc4226
NPN Silicon Epitaxial Planar Transistor
2SC4226 APPLICATION NOTES
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