DMA150YA1600NA
Abstract: DMA150YC1600NA
Text: DMA 150 YA 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier Half 3~ Bridge, Common Anode Part number 1600 V 150 A 1.12 V 1 3 2 4 Backside: isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline
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OT-227B
60747and
DMA150YA1600NA
DMA150YC1600NA
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DMA150E1600NA
Abstract: No abstract text available
Text: DMA 150 E 1600 NA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 150 A 1.13 V Part number 1 3 2 4 Backside: Isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline rCu base plate internal DCB isolated
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OT-227B
160LLIMETERS
60747and
DMA150E1600NA
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DMA150YA1600NA
Abstract: DMA150YC1600NA
Text: DMA 150 YC 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier half 3~ Bridge, Common Cathode Part number 1600 V 150 A 1.12 V 1 3 2 4 Backside: isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline
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OT-227B
60747and
DMA150YA1600NA
DMA150YC1600NA
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Untitled
Abstract: No abstract text available
Text: IXA60IF1200NA XPT IGBT VCES = 1200 V I C25 = 88 A VCE sat = 1.8 V Copack Part number IXA60IF1200NA Backside: collector C (3) (G) 2 E (1+4) Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Easy paralleling due to the positive temperature
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IXA60IF1200NA
OT-227B
60747and
20100623a
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Untitled
Abstract: No abstract text available
Text: DSA300I45NA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 300 A VF = 0.76 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I45NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I45NA
OT-227B
60747and
20120907a
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DMA150YC1600NA
Abstract: DMA150YA1600NA
Text: DMA150YC1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Cathode Part number DMA150YC1600NA Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips
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DMA150YC1600NA
OT-227B
60747and
20130128a
DMA150YC1600NA
DMA150YA1600NA
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Untitled
Abstract: No abstract text available
Text: MCO100-16io1 Thyristor VRRM = 1600 V I TAV = 101 A VT = 1.3 V Single Thyristor Part number MCO100-16io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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MCO100-16io1
OT-227B
60747and
20140123a
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DMA150YA1600NA
Abstract: dma150 SOT227B package IXYS DMA150YA1600NA DMA150YC1600NA
Text: DMA150YA1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Anode Part number DMA150YA1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips
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DMA150YA1600NA
OT-227B
60747and
20130128a
DMA150YA1600NA
dma150
SOT227B package
IXYS DMA150YA1600NA
DMA150YC1600NA
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Untitled
Abstract: No abstract text available
Text: MCO100-12io1 Thyristor VRRM = 1200 V I TAV = 101 A VT = 1.3 V Single Thyristor Part number MCO100-12io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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MCO100-12io1
OT-227B
60747and
20140123a
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DMA150E1600NA
Abstract: No abstract text available
Text: DMA150E1600NA Standard Rectifier VRRM = 1600 V I FAV = 150 A VF = 1.05 V Single Diode Part number DMA150E1600NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips ● Very low leakage current
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DMA150E1600NA
OT-227B
60747and
20130117a
DMA150E1600NA
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DMA150YA1600NA
Abstract: DMA150YC1600NA
Text: DMA150YC1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Cathode Part number DMA150YC1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips
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DMA150YC1600NA
OT-227B
60747and
20130128a
DMA150YA1600NA
DMA150YC1600NA
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CMA80PD1600NA
Abstract: No abstract text available
Text: CMA80PD1600NA advanced Thyristor VRRM = 2x 1600 V I TAV = 80 A VT = 1.29 V Phase leg Part number CMA80PD1600NA Backside: isolated 4 3 1 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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CMA80PD1600NA
OT-227B
60747and
CMA80PD1600NA
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Untitled
Abstract: No abstract text available
Text: MCO150-12io1 Thyristor VRRM = 1200 V I TAV = 158 A VT = 1.37 V Single Thyristor Part number MCO150-12io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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MCO150-12io1
OT-227B
60747and
20140123a
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Untitled
Abstract: No abstract text available
Text: MCO150-16io1 Thyristor VRRM = 1600 V I TAV = 158 A VT = 1.37 V Single Thyristor Part number MCO150-16io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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MCO150-16io1
OT-227B
60747and
20140123a
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CLA110MB1200NA
Abstract: No abstract text available
Text: MMO90-12io6 Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.2 V AC Controlling 1~ full-controlled Part number MMO90-12io6 Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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MMO90-12io6
OT-227B
60747and
20140203a
CLA110MB1200NA
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Untitled
Abstract: No abstract text available
Text: MMO74-16io6 Thyristor VRRM = 1600 V I TAV = 40 A VT = 1.29 V AC Controlling 1~ full-controlled Part number MMO74-16io6 Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip
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MMO74-16io6
OT-227B
60747and
20140203a
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CLA110MB1200NA
Abstract: No abstract text available
Text: CLA110MB1200NA High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.04 V AC Controlling 1~ full-controlled Part number CLA110MB1200NA Backside: Isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● AC controller for line frequency
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CLA110MB1200NA
OT-227B
60747and
20130408b
CLA110MB1200NA
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Untitled
Abstract: No abstract text available
Text: IXA70I1200NA XPT IGBT VCES = 1200 V I C25 = 100 A VCE sat = 1.8 V Single IGBT Part number IXA70I1200NA Backside: collector (C) 3 (G) 2 (E) 1+4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Easy paralleling due to the positive temperature
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IXA70I1200NA
OT-227B
60747and
20131024c
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Untitled
Abstract: No abstract text available
Text: DSA300I100NA preliminary Schottky Diode Gen ² VRRM = 100 V I FAV = 300 A VF = 0.88 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I100NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I100NA
OT-227B
60747and
20120907a
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SOT227B
Abstract: No abstract text available
Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 300 A VF = 0.91 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I200NA
OT-227B
60747and
20120907a
SOT227B
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Untitled
Abstract: No abstract text available
Text: DSI2x55-12A Standard Rectifier VRRM = 1200 V I FAV = 2x VF = 60 A 1.22 V Parallel legs Part number DSI2x55-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips ● Very low leakage current
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DSI2x55-12A
OT-227B
60747and
20130307b
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DSA300I200NA
Abstract: IXYS DSA300I200NA DSA300I45NA diode by 126
Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I200NA
OT-227B
60747and
20120907a
DSA300I200NA
IXYS DSA300I200NA
DSA300I45NA
diode by 126
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DSA300I45NA
Abstract: No abstract text available
Text: DSA300I45NA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 300 A VF = 0.76 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I45NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I45NA
OT-227B
60747and
20120907a
DSA300I45NA
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Untitled
Abstract: No abstract text available
Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 300 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I200NA
OT-227B
60747and
20120907a
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