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    SOT-227B OUTLINE Search Results

    SOT-227B OUTLINE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-227B OUTLINE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DMA150YA1600NA

    Abstract: DMA150YC1600NA
    Text: DMA 150 YA 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier Half 3~ Bridge, Common Anode Part number 1600 V 150 A 1.12 V 1 3 2 4 Backside: isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline


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    PDF OT-227B 60747and DMA150YA1600NA DMA150YC1600NA

    DMA150E1600NA

    Abstract: No abstract text available
    Text: DMA 150 E 1600 NA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 150 A 1.13 V Part number 1 3 2 4 Backside: Isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline rCu base plate internal DCB isolated


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    PDF OT-227B 160LLIMETERS 60747and DMA150E1600NA

    DMA150YA1600NA

    Abstract: DMA150YC1600NA
    Text: DMA 150 YC 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier half 3~ Bridge, Common Cathode Part number 1600 V 150 A 1.12 V 1 3 2 4 Backside: isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline


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    PDF OT-227B 60747and DMA150YA1600NA DMA150YC1600NA

    Untitled

    Abstract: No abstract text available
    Text: IXA60IF1200NA XPT IGBT VCES = 1200 V I C25 = 88 A VCE sat = 1.8 V Copack Part number IXA60IF1200NA Backside: collector C (3) (G) 2 E (1+4) Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Easy paralleling due to the positive temperature


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    PDF IXA60IF1200NA OT-227B 60747and 20100623a

    Untitled

    Abstract: No abstract text available
    Text: DSA300I45NA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 300 A VF = 0.76 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I45NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc


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    PDF DSA300I45NA OT-227B 60747and 20120907a

    DMA150YC1600NA

    Abstract: DMA150YA1600NA
    Text: DMA150YC1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Cathode Part number DMA150YC1600NA Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips


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    PDF DMA150YC1600NA OT-227B 60747and 20130128a DMA150YC1600NA DMA150YA1600NA

    Untitled

    Abstract: No abstract text available
    Text: MCO100-16io1 Thyristor VRRM = 1600 V I TAV = 101 A VT = 1.3 V Single Thyristor Part number MCO100-16io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF MCO100-16io1 OT-227B 60747and 20140123a

    DMA150YA1600NA

    Abstract: dma150 SOT227B package IXYS DMA150YA1600NA DMA150YC1600NA
    Text: DMA150YA1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Anode Part number DMA150YA1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips


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    PDF DMA150YA1600NA OT-227B 60747and 20130128a DMA150YA1600NA dma150 SOT227B package IXYS DMA150YA1600NA DMA150YC1600NA

    Untitled

    Abstract: No abstract text available
    Text: MCO100-12io1 Thyristor VRRM = 1200 V I TAV = 101 A VT = 1.3 V Single Thyristor Part number MCO100-12io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF MCO100-12io1 OT-227B 60747and 20140123a

    DMA150E1600NA

    Abstract: No abstract text available
    Text: DMA150E1600NA Standard Rectifier VRRM = 1600 V I FAV = 150 A VF = 1.05 V Single Diode Part number DMA150E1600NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips ● Very low leakage current


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    PDF DMA150E1600NA OT-227B 60747and 20130117a DMA150E1600NA

    DMA150YA1600NA

    Abstract: DMA150YC1600NA
    Text: DMA150YC1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Cathode Part number DMA150YC1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips


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    PDF DMA150YC1600NA OT-227B 60747and 20130128a DMA150YA1600NA DMA150YC1600NA

    CMA80PD1600NA

    Abstract: No abstract text available
    Text: CMA80PD1600NA advanced Thyristor VRRM = 2x 1600 V I TAV = 80 A VT = 1.29 V Phase leg Part number CMA80PD1600NA Backside: isolated 4 3 1 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF CMA80PD1600NA OT-227B 60747and CMA80PD1600NA

    Untitled

    Abstract: No abstract text available
    Text: MCO150-12io1 Thyristor VRRM = 1200 V I TAV = 158 A VT = 1.37 V Single Thyristor Part number MCO150-12io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF MCO150-12io1 OT-227B 60747and 20140123a

    Untitled

    Abstract: No abstract text available
    Text: MCO150-16io1 Thyristor VRRM = 1600 V I TAV = 158 A VT = 1.37 V Single Thyristor Part number MCO150-16io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF MCO150-16io1 OT-227B 60747and 20140123a

    CLA110MB1200NA

    Abstract: No abstract text available
    Text: MMO90-12io6 Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.2 V AC Controlling 1~ full-controlled Part number MMO90-12io6 Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF MMO90-12io6 OT-227B 60747and 20140203a CLA110MB1200NA

    Untitled

    Abstract: No abstract text available
    Text: MMO74-16io6 Thyristor VRRM = 1600 V I TAV = 40 A VT = 1.29 V AC Controlling 1~ full-controlled Part number MMO74-16io6 Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


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    PDF MMO74-16io6 OT-227B 60747and 20140203a

    CLA110MB1200NA

    Abstract: No abstract text available
    Text: CLA110MB1200NA High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.04 V AC Controlling 1~ full-controlled Part number CLA110MB1200NA Backside: Isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● AC controller for line frequency


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    PDF CLA110MB1200NA OT-227B 60747and 20130408b CLA110MB1200NA

    Untitled

    Abstract: No abstract text available
    Text: IXA70I1200NA XPT IGBT VCES = 1200 V I C25 = 100 A VCE sat = 1.8 V Single IGBT Part number IXA70I1200NA Backside: collector (C) 3 (G) 2 (E) 1+4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Easy paralleling due to the positive temperature


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    PDF IXA70I1200NA OT-227B 60747and 20131024c

    Untitled

    Abstract: No abstract text available
    Text: DSA300I100NA preliminary Schottky Diode Gen ² VRRM = 100 V I FAV = 300 A VF = 0.88 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I100NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc


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    PDF DSA300I100NA OT-227B 60747and 20120907a

    SOT227B

    Abstract: No abstract text available
    Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 300 A VF = 0.91 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc


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    PDF DSA300I200NA OT-227B 60747and 20120907a SOT227B

    Untitled

    Abstract: No abstract text available
    Text: DSI2x55-12A Standard Rectifier VRRM = 1200 V I FAV = 2x VF = 60 A 1.22 V Parallel legs Part number DSI2x55-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips ● Very low leakage current


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    PDF DSI2x55-12A OT-227B 60747and 20130307b

    DSA300I200NA

    Abstract: IXYS DSA300I200NA DSA300I45NA diode by 126
    Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc


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    PDF DSA300I200NA OT-227B 60747and 20120907a DSA300I200NA IXYS DSA300I200NA DSA300I45NA diode by 126

    DSA300I45NA

    Abstract: No abstract text available
    Text: DSA300I45NA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 300 A VF = 0.76 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I45NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc


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    PDF DSA300I45NA OT-227B 60747and 20120907a DSA300I45NA

    Untitled

    Abstract: No abstract text available
    Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 300 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc


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    PDF DSA300I200NA OT-227B 60747and 20120907a