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    SOT-23/TRANSISTOR MARKING PO Search Results

    SOT-23/TRANSISTOR MARKING PO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23/TRANSISTOR MARKING PO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel


    Original     		KST42 KST43 OT-23 KST42MTF OT-23 KST43MTF PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-23 MMBT4401 OT-23 MMBT4401 -55to 150mA 150mA, 100MHz PDF

    2A MARKING SOT23

    Abstract: No abstract text available
    Text: MMBT589 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		MMBT589 OT-23 OT-23 -100A -10mA -500mA -500mA, -50mA -100mA 2A MARKING SOT23 PDF

    MMBT4403

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-23 OT-23 MMBT4403 -100A -100A, -150mA -150mA, -15mA 150mA, PDF

    MMBT4401

    Abstract: marking 2X SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-23 MMBT4401 OT-23 MMBT4401 -55to 150mA 150mA, 100MHz marking 2X SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-23 OT-23 MMBT4403 -150mA -150mA, -15mA 150mA, -20mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 MMBTA05 OT-23 100mA 100mA, 100MHz PDF

    MMBTA05

    Abstract: marking 1h
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 MMBTA05 OT-23 100mA 100mA, 100MHz MMBTA05 marking 1h PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA92 SOT-23 TRANSISTOR PNP FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit


    Original     		OT-23 MMBTA92 OT-23 -200V, -10mA -30mA -20mA, 30MHz PDF

    marking 2d

    Abstract: MMBTA92 SOT-23 2D sot 23 transistor sot23 marking 2d 2D SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA92 SOT-23 TRANSISTOR PNP FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Value Units


    Original     		OT-23 MMBTA92 OT-23 -100A, -200V, -10mA -30mA -20mA, marking 2d MMBTA92 SOT-23 2D sot 23 transistor sot23 marking 2d 2D SOT23 PDF

    1AM MMBT3904

    Abstract: transistors 1am transistor 1am
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ


    Original     		OT-23 MMBT3904 MMBT3906 OT-23 1AM MMBT3904 transistors 1am transistor 1am PDF

    Marking 2A

    Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
    Text: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — As complementary type, the NPN transistor MMBT3904 is Recommended — Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		MMBT3906 OT-23 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA, 100MHz Marking 2A 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23 PDF

    sot23 marking 2d

    Abstract: 2D SOT23 2D TRANSISTOR marking 2D
    Text: MMBTA92 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High voltage transistor MARKING:2D Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		MMBTA92 OT-23 OT-23 -100A, -200V, -10mA -30mA -20mA, sot23 marking 2d 2D SOT23 2D TRANSISTOR marking 2D PDF

    marking G1 sot-23

    Abstract: MMBT5401 MMBT5551 MARKING G1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1


    Original     		OT-23 MMBT5551 OT-23 MMBT5401 100MHz MMBT5551 marking G1 sot-23 MMBT5401 MARKING G1 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2L


    Original     		OT-23 MMBT5401 OT-23 MMBT5551 -10mA -50mA 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2369 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : M1J 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 MMBT2369 100mA MMBT2369 PDF

    m8050

    Abstract: y11 transistor M8050-TRANSISTOR transistor y11 sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8050 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 M8050 100mA 800mA 800mA, 30MHz m8050 y11 transistor M8050-TRANSISTOR transistor y11 sot-23 PDF

    MARKING 2L

    Abstract: MMBT5401 MMBT5551
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: 2L


    Original     		OT-23 MMBT5401 OT-23 MMBT5551 -10mA -50mA 30MHz MMBT5401 MARKING 2L MMBT5551 PDF

    transistor y21 sot-23

    Abstract: M8550
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8550 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 M8550 -100A, -100mA -800mA -800mA, -80mA transistor y21 sot-23 M8550 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M8050 SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 M8050 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 C1815 C1815 100uA, 100mA, 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 C1815 C1815 100uA, 100mA, 30MHz PDF

    C1815HF

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 C1815 C1815 100uA, 30MHz C1815HF PDF

    transistor C1815

    Abstract: c1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 C1815 C1815 M100uA, 100mA, 30MHz transistor C1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor PDF