Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT-23/TRANSISTOR MARKING PO Search Results

    SOT-23/TRANSISTOR MARKING PO Result Highlights (5)

    Part
    ECAD Model
    Manufacturer
    Description
    Download
    Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2712
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2713
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=0.1 A / hFE=200~700 / VCE(sat)=0.3 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC4116
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    2SA1162
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-0.15 A / hFE=70~400 / VCE(sat)=-0.3 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23/TRANSISTOR MARKING PO Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Contextual Info: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel


    Original
    KST42 KST43 OT-23 KST42MTF OT-23 KST43MTF PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    OT-23 MMBT4401 OT-23 MMBT4401 -55to 150mA 150mA, 100MHz PDF

    2A MARKING SOT23

    Contextual Info: MMBT589 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original
    MMBT589 OT-23 OT-23 -100A -10mA -500mA -500mA, -50mA -100mA 2A MARKING SOT23 PDF

    MMBT4403

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original
    OT-23 OT-23 MMBT4403 -100A -100A, -150mA -150mA, -15mA 150mA, PDF

    MMBT4401

    Abstract: marking 2X SOT23
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original
    OT-23 MMBT4401 OT-23 MMBT4401 -55to 150mA 150mA, 100MHz marking 2X SOT23 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :MMBT4403=2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    OT-23 OT-23 MMBT4403 -150mA -150mA, -15mA 150mA, -20mA PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original
    OT-23 MMBTA05 OT-23 100mA 100mA, 100MHz PDF

    MMBTA05

    Abstract: marking 1h
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original
    OT-23 MMBTA05 OT-23 100mA 100mA, 100MHz MMBTA05 marking 1h PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA92 SOT-23 TRANSISTOR PNP FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit


    Original
    OT-23 MMBTA92 OT-23 -200V, -10mA -30mA -20mA, 30MHz PDF

    marking 2d

    Abstract: MMBTA92 SOT-23 2D sot 23 transistor sot23 marking 2d 2D SOT23
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA92 SOT-23 TRANSISTOR PNP FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Value Units


    Original
    OT-23 MMBTA92 OT-23 -100A, -200V, -10mA -30mA -20mA, marking 2d MMBTA92 SOT-23 2D sot 23 transistor sot23 marking 2d 2D SOT23 PDF

    1AM MMBT3904

    Abstract: transistors 1am transistor 1am
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Code


    Original
    OT-23 MMBT3904 MMBT3906 OT-23 1AM MMBT3904 transistors 1am transistor 1am PDF

    Marking 2A

    Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
    Contextual Info: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — As complementary type, the NPN transistor MMBT3904 is Recommended — Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original
    MMBT3906 OT-23 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA, 100MHz Marking 2A 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23 PDF

    sot23 marking 2d

    Abstract: 2D SOT23 2D TRANSISTOR marking 2D
    Contextual Info: MMBTA92 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High voltage transistor MARKING:2D Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original
    MMBTA92 OT-23 OT-23 -100A, -200V, -10mA -30mA -20mA, sot23 marking 2d 2D SOT23 2D TRANSISTOR marking 2D PDF

    marking G1 sot-23

    Abstract: MMBT5401 MMBT5551 MARKING G1
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1


    Original
    OT-23 MMBT5551 OT-23 MMBT5401 100MHz MMBT5551 marking G1 sot-23 MMBT5401 MARKING G1 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2L


    Original
    OT-23 MMBT5401 OT-23 MMBT5551 -10mA -50mA 30MHz PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2369 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : M1J 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original
    OT-23 MMBT2369 100mA MMBT2369 PDF

    m8050

    Abstract: y11 transistor M8050-TRANSISTOR transistor y11 sot-23
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8050 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original
    OT-23 M8050 100mA 800mA 800mA, 30MHz m8050 y11 transistor M8050-TRANSISTOR transistor y11 sot-23 PDF

    MARKING 2L

    Abstract: MMBT5401 MMBT5551
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: 2L


    Original
    OT-23 MMBT5401 OT-23 MMBT5551 -10mA -50mA 30MHz MMBT5401 MARKING 2L MMBT5551 PDF

    transistor y21 sot-23

    Abstract: M8550
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8550 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original
    OT-23 M8550 -100A, -100mA -800mA -800mA, -80mA transistor y21 sot-23 M8550 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M8050 SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original
    OT-23 M8050 OT-23 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original
    OT-23 C1815 C1815 100uA, 100mA, 30MHz PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original
    OT-23 C1815 C1815 100uA, 100mA, 30MHz PDF

    C1815HF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original
    OT-23 C1815 C1815 100uA, 30MHz C1815HF PDF

    transistor C1815

    Abstract: c1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original
    OT-23 C1815 C1815 M100uA, 100mA, 30MHz transistor C1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor PDF