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    SOT-23 DIODE L9 Search Results

    SOT-23 DIODE L9 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 DIODE L9 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BAV70 PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE VOLTAGE 75 Volts POWER SOT- 23 250mWatts Unit: inch mm FEATURES .056(1.40) .103(2.60) .047(1.20) • Electrically Identical to Standard JEDEC .007(.20)MIN .119(3.00) .110(2.80) • Surface mount package Ideally Suited for Automatic insertion


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    PDF BAV70 250mWatts OT-23, MIL-STD-202,

    ON Semiconductor marking

    Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
    Text: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


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    PDF DLD601/D Mar-2001 r14525 DLD601 ON Semiconductor marking fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline

    marking code t04 sot-23 transistor

    Abstract: TRANSISTOR W2D Marking c9 SOT23-5 TOSHIBA SOT-23-6 marking code M2 marking a hA packages SC70-5 W2D SOT23 Diode SOT-23-6 marking L5 TESLA mh 7400 OneGate Marking AE sot23-5 torex marking code 252
    Text: DLD601/D Rev. 2, Dec-2001 MiniGate Logic One-Gates, Two-Gates, Three-Gates and Analog Switches MiniGate™ Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DLD601/D Dec-2001 r14525 DLD601 marking code t04 sot-23 transistor TRANSISTOR W2D Marking c9 SOT23-5 TOSHIBA SOT-23-6 marking code M2 marking a hA packages SC70-5 W2D SOT23 Diode SOT-23-6 marking L5 TESLA mh 7400 OneGate Marking AE sot23-5 torex marking code 252

    V = Device Code

    Abstract: No abstract text available
    Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    PDF MC74VHC1G02 353/SC V = Device Code

    marking CODE W2D

    Abstract: marking w2d
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


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    PDF MC74VHC1G126 353/SC marking CODE W2D marking w2d

    V = Device Code

    Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


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    PDF MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D

    diode Marking code v3

    Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
    Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.


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    PDF MC74HC1G14 MC74HC 353/SC diode Marking code v3 sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64

    V = Device Code

    Abstract: MC74VHC1G00
    Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    PDF MC74VHC1G00 353/SC V = Device Code

    Wafer Fab Plant Codes ST

    Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
    Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    PDF MC74HC1G32 MC74HC 353/SC Wafer Fab Plant Codes ST V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08

    V = Device Code

    Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE
    Text: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


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    PDF MC74VHC1GT32 V = Device Code diode Marking code v3 on semi aa sot353 TOREX TOP CODE

    V = Device Code

    Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
    Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    PDF MC74VHC1G86 353/SC V = Device Code vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A

    PC 74 HCT 32 P

    Abstract: U-046 V = Device Code
    Text: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low


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    PDF MC74VHC1G01 PC 74 HCT 32 P U-046 V = Device Code

    marking H5 sot 23-5

    Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
    Text: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    PDF MC74VHC1G132 marking H5 sot 23-5 vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code

    V = Device Code

    Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
    Text: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


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    PDF MC74VHC1G135 V = Device Code ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5

    V = Device Code

    Abstract: diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004
    Text: MC74VHC1G05 Advance Information Inverter with Open Drain Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky


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    PDF MC74VHC1G05 V = Device Code diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004

    AND8004/D

    Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
    Text: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    PDF MC74HC1G00 MC74HC 353/SC AND8004/D V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004

    t08 sot-23

    Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
    Text: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


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    PDF MC74VHC1GT08 t08 sot-23 ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3

    FMMD6050

    Abstract: FMMD914 BAW* diode BAL99 BAR99 BAV70 BAV74 BAV99 ZC830A ZC831A
    Text: SOT 23 TRANSISTORS & DIODES SELECTIO N GUIDE SILICO N P LA N A R HIGH SP EED SW ITCH IN G D IO D ES Rat ings Description Type B A S 16 FMMD914 HD3A BA L99 BA R99 FMMD6050 BAV70 BAV74 HD2A BAV99 BA W S6 HD4A Single diode Single diode Single diode Single diode


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    PDF FMMD914 BAL99 BAR99 FMMD6050 BAV70 BAV74 BAV99 C9/C20 50MHz ZC830A BAW* diode ZC831A

    5D marking DIODE BAS16

    Abstract: Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23
    Text: FERRANTI i semiconductors BAS16 High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid


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    PDF BAS16 OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A 5D marking DIODE BAS16 Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23

    FMMD6050

    Abstract: Q953 diode marking code YF Z6 DIODE BAL99 BAR99 BAS16 BAV70 BZX84-C43 BZX84-C47
    Text: FERRANTI 4 semiconductors FMMD6050 • High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid


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    PDF FMMD6050 OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A FMMD6050 Q953 diode marking code YF Z6 DIODE BAL99 BAR99 BAS16 BAV70 BZX84-C43 BZX84-C47

    Diode Marking z3 SOT-23

    Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
    Text: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


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    PDF BAR99 OT-23 BAR99 C9/C20 50MHz ZC830A ZC831A ZC832A Diode Marking z3 SOT-23 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99

    FMMD6050

    Abstract: E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAL99 BAS16 SOT diode marking Z3 BAV74
    Text: FERRANTI semiconductors BAL99 High Speed S w itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


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    PDF BAL99 OT-23 BAL99 C9/C20 50MHz ZC830A ZC831A ZC832A FMMD6050 E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAS16 SOT diode marking Z3 BAV74

    C6V2 ST

    Abstract: FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BAV74 BZX84-C43
    Text: FERRANTI semiconductors BAV74 High Speed S w itc h in g Diode Pair Comrhon Cathode DESCRIPTION These devices are intended fo r high speed sw itching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


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    PDF BAV74 OT-23 BAV74 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A C6V2 ST FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BZX84-C43

    zener diode marking E7

    Abstract: diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Typ e Device Typ e Device m arking Device m arking BA L99 E2 B Z X 84-C 4 3 X6 B A R 99 E3 B Z X 84-C 47 X7 B A S 16 A3 FM M D 914 5D B A V 70 A4 FM M D 6050 5A B A V 74


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    PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 zener diode marking E7 diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99