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    SOT-23 DIODE MARKING CODE C3 Search Results

    SOT-23 DIODE MARKING CODE C3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 DIODE MARKING CODE C3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    b631 transistor

    Abstract: S3 marking DIODE b631 Q62702-B631
    Text: BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51 S3 1=A Q62702-B631 Package 2=A 3 = C1/C2 SOT-23


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    Q62702-B631 OT-23 Jan-09-1997 b631 transistor S3 marking DIODE b631 Q62702-B631 PDF

    MV2105

    Abstract: MMBV2108LT1G
    Text: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state


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    MMBV2101LT1 MV2105, MV2101, MV2109, LV2209 MMBV2101LT1/D MV2105 MMBV2108LT1G PDF

    SOT23 MARKING code 4W

    Abstract: MV2109 MMBV2105L 65t marking diode mv2105 sot-23 297 marking marking 297 sot-23 marking code 4h diode SOT23 65T MMBV2109LT1 equivalent
    Text: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state


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    MMBV2101LT1 MV2105, MV2101, MV2109, LV2209 OT-23 MMBV2101LT1/D SOT23 MARKING code 4W MV2109 MMBV2105L 65t marking diode mv2105 sot-23 297 marking marking 297 sot-23 marking code 4h diode SOT23 65T MMBV2109LT1 equivalent PDF

    ON Semiconductor marking

    Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
    Text: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


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    DLD601/D Mar-2001 r14525 DLD601 ON Semiconductor marking fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline PDF

    marking code ER sot 143

    Abstract: HSMS-2827 SCHOTTKY DIODE SOT-143 AN1124 HSMS-286 marking cross ref sot-143 HSMS-2822 variable power divider 282P HSMS-28
    Text: HSMS-282x Surface Mount RF Schottky ­Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to give


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    HSMS-282x HSMS282x OT-323 SC70-3 OT-363 SC70-6 HSMS-282x-TR2G HSMS-282x-TR1G HSMS-282x-BLKG 5989-4030EN marking code ER sot 143 HSMS-2827 SCHOTTKY DIODE SOT-143 AN1124 HSMS-286 marking cross ref sot-143 HSMS-2822 variable power divider 282P HSMS-28 PDF

    variable power divider

    Abstract: marking code C9 282P HSMS-282K common base mixer circuit analysis marking cross ref sot-143 hsms2822 schottky diode limiter application note
    Text: HSMS-282x Surface Mount RF Schottky ­Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to give


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    HSMS-282x HSMS282x OT-323 SC70-3 OT-363 SC70-6 HSMS-282x-TR2G HSMS-282x-TR1G HSMS-282x-BLKG 5989-4030EN variable power divider marking code C9 282P HSMS-282K common base mixer circuit analysis marking cross ref sot-143 hsms2822 schottky diode limiter application note PDF

    ct 1061

    Abstract: marking code 4h diode
    Text: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8−100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general


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    MMBV2101LT1 MV2105, MV2101, MV2109, LV2205, LV2209 OT-23 ct 1061 marking code 4h diode PDF

    LV2205

    Abstract: LV2209 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MV2101 MV2105 MV2109 MERIT INCH
    Text: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8–100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general


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    MMBV2101LT1 MV2105, MV2101, MV2109, LV2205, LV2209 r14525 MMBV2101LT1/D LV2205 LV2209 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MV2101 MV2105 MV2109 MERIT INCH PDF

    diode marking code C3 sot23

    Abstract: C3 SOT23-3 MMBV105GLT1 MMBV105GLT1G marking C3 sot-23 SOT-23 marking code 104 sot-23 marking code C3 MARKING C25 SOT23 sot-23 DIODE marking code c3 marking code c3 sot 23
    Text: MMBV105GLT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • Controlled and Uniform Tuning Ratio


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    MMBV105GLT1 diode marking code C3 sot23 C3 SOT23-3 MMBV105GLT1 MMBV105GLT1G marking C3 sot-23 SOT-23 marking code 104 sot-23 marking code C3 MARKING C25 SOT23 sot-23 DIODE marking code c3 marking code c3 sot 23 PDF

    V = Device Code

    Abstract: No abstract text available
    Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    MC74VHC1G02 353/SC V = Device Code PDF

    marking CODE W2D

    Abstract: marking w2d
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


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    MC74VHC1G126 353/SC marking CODE W2D marking w2d PDF

    V = Device Code

    Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


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    MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D PDF

    diode Marking code v3

    Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
    Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.


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    MC74HC1G14 MC74HC 353/SC diode Marking code v3 sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 PDF

    V = Device Code

    Abstract: MC74VHC1G00
    Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    MC74VHC1G00 353/SC V = Device Code PDF

    Wafer Fab Plant Codes ST

    Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
    Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    MC74HC1G32 MC74HC 353/SC Wafer Fab Plant Codes ST V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08 PDF

    V = Device Code

    Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE
    Text: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


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    MC74VHC1GT32 V = Device Code diode Marking code v3 on semi aa sot353 TOREX TOP CODE PDF

    PC 74 HCT 32 P

    Abstract: U-046 V = Device Code
    Text: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low


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    MC74VHC1G01 PC 74 HCT 32 P U-046 V = Device Code PDF

    marking H5 sot 23-5

    Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
    Text: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    MC74VHC1G132 marking H5 sot 23-5 vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code PDF

    V = Device Code

    Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
    Text: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


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    MC74VHC1G135 V = Device Code ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 PDF

    V = Device Code

    Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
    Text: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    MC74VHC1G04 353/SC V = Device Code marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode PDF

    V = Device Code

    Abstract: diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004
    Text: MC74VHC1G05 Advance Information Inverter with Open Drain Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky


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    MC74VHC1G05 V = Device Code diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004 PDF

    AND8004/D

    Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
    Text: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    MC74HC1G00 MC74HC 353/SC AND8004/D V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 PDF

    t08 sot-23

    Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
    Text: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


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    MC74VHC1GT08 t08 sot-23 ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3 PDF

    T138A

    Abstract: U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code
    Text: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    MC74HC1GU04 MC74HC 353/SC T138A U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code PDF