kl4 diode
Abstract: kl3 diode kl2 diode kl2 marking kl4 transistor BAT54C KL3 DC marking 08 sot-23 BAT54 BAT54A BAT54C
Text: BAT54 SCHOTTKY DIODES SOT-23 PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Diodes FEATURES Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25 oC Parameter
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BAT54
OT-23
OT-23
BAT54
BAT54A
BAT54C
BAT54S
100Aeliness
kl4 diode
kl3 diode
kl2 diode
kl2 marking
kl4 transistor
BAT54C KL3 DC
marking 08 sot-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @Ta=25℃
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OT-23
BAT54/A/C/S
OT-23
BAT54
BAT54A
BAT54C
BAT54S
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kl4 diode
Abstract: BAT54S kl1 BAT54A kl3 diode bat54 KL4 SOT-23 bat54a sot-23 BAT54 kl3 marking KL4 kl1 diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY DIODES SOT-23 FEATURES z Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @TA=25℃
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OT-23
BAT54/A/C/S
OT-23
BAT54
BAT54A
BAT54C
BAT54S
100mA
kl4 diode
BAT54S kl1
kl3 diode
KL4 SOT-23
bat54a sot-23
BAT54 kl3
marking KL4
kl1 diode
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BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 BAS40/-04/-05/-06 SCHOTTKY DIODE FEATURES z Low Forward Voltage z Fast Switching BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING:45 BAS40-04 MARKING:44
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OT-23
OT-23
BAS40/-04/-05/-06
BAS40
BAS40-06
BAS40-05
MARKING45
BAS40-04
MARKING44
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43 • BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46
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OT-23
BAS40/-04/-05/-06
OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43h BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25
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OT-23
BAS40/-04/-05/-06
OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS70/-04/-05/-06 SWITCHING DIODE SOT-23 FEATURES z Low turn-on voltage z Fast switching z Also available in lead free version BAS70 Marking: 73 BAS70-04 Marking: 74 BAS70-05 Marking: 75
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OT-23
BAS70/-04/-05/-06
OT-23
BAS70
BAS70-04
BAS70-05
BAS70-06
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marking 04 sot23
Abstract: BAS70 BAS70-04 BAS70-05 BAS70-06 marking sot23 76 diode marking 74
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BAS70/-04/-05/-06 SWITCHING DIODE SOT-23 FEATURES z Low Turn-on voltage z Fast switching z Also available in lead free version BAS70 Marking: 73 BAS70-04 Marking: 74 BAS70-05 Marking: 75
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OT-23
BAS70/-04/-05/-06
OT-23
BAS70
BAS70-04
BAS70-05
BAS70-06
marking 04 sot23
marking sot23 76
diode marking 74
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel LMBTA42LT3G 1D SOT-23 10000/Tape&Reel
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LMBTA42LT1G
LMBTA43LT1G
OT-23
3000/Tape
LMBTA42LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4
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OT-23
BAW56/BAV70/BAV99
OT-23
BAW56
BAV70
BAV99
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4
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OT-23
BAW56/BAV70/BAV99
OT-23
BAW56
BAV70
BAV99
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marking a7
Abstract: marking a1 marking A4 BAV99 BAW56 A7 marking bav99 marking Diode BAV99 SOT23 A4 marking diode diode bav70
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4
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OT-23
BAW56/BAV70/BAV99
OT-23
BAW56
BAV70
BAV99
150mA
marking a7
marking a1
marking A4
A7 marking
bav99 marking
Diode BAV99 SOT23
A4 marking diode
diode bav70
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5B1 SOT23
Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC807-16LT1 LBC807-16LT1G 5A1 SOT-23 5B1 SOT-23 5B1 Pb-Free LBC807-40LT1 LBC807-40LT1G
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LBC807-16LT1
LBC807-16LT1G
OT-23
LBC807-40LT1
LBC807-40LT1G
LBC807-25LT1
LBC807-25LT1G
5B1 SOT23
5B1 SOT-23
sot23 marking 5c1
marking 5b1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating
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LBAS16LT1G
OT-23
3000/Tape
LBAS16LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage
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OT-23
BAS21/A/C/SLT1
BAS21LT1
BAS21ALT1
BAS21CLT1
037TPY
950TPY
550REF
022REF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SOT—23 SCHOTTKY DIODE FEATURES CMPSH-3 Marking: D95 CMPSH-3A Marking: DB1 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage
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OT-23
037TPY
950TPY
550REF
022REF
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sod-23
Abstract: diode sod23 SOD 23 marking a7 SOD23 marking A4 marking A1 diode marking a4 MARKING A4 transistor SILICON SWITCHING DIODE
Text: BAV70 SWITCHING DIODE PRODUCT SUMMARY SOT-23 SOD-23 Plastic-Encapsulate Diodes FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C
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BAV70
OT-23
OD-23
BAW56
BAV70
BAV99
sod-23
diode sod23
SOD 23
marking a7
SOD23
marking A4
marking A1
diode marking a4
MARKING A4 transistor
SILICON SWITCHING DIODE
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2SA1179
Abstract: 10u 35v
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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OT-23
2SA1179
-50mA
-10mA
2SA1179
10u 35v
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BF569
Abstract: marking A1 TRANSISTOR BF569R marking LM
Text: BF569/BF569R Silicon PNP Planar RF Transistor Applications For selfoscillating RF mixter stages 1 2 1 3 3 94 9280 BF569 Marking: LH Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BF569R Marking: LM Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter
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BF569/BF569R
BF569
BF569R
D-74025
16-Jan-96
marking A1 TRANSISTOR
marking LM
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10u 35v
Abstract: 2SA1179 sot 23 PNP
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter
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OT-23
2SA1179
-50mA
-10mA
10u 35v
2SA1179
sot 23 PNP
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . High breakdown voltage 1 1. BASE 2 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol
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OT-23
2SA1179
-50mA
-10mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBT4401
OT-23
MMBT4401
-55to
150mA
150mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1
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OT-23
3DK2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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