Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT-23 MARKING WZ Search Results

    SOT-23 MARKING WZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING WZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2259

    Abstract: Q62702-C2259
    Text: BCR 142 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor R1=22kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 142 WZs 1=B Q62702-C2259 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2259 OT-23 Dec-18-1996 C2259 Q62702-C2259

    Untitled

    Abstract: No abstract text available
    Text: BCR 142 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 142 WZs Pin Configuration 1=B 2=E Package 3=C SOT-23


    Original     		PDF VPS05161 EHA07184 OT-23 Oct-19-1999

    V = Device Code

    Abstract: No abstract text available
    Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G02 353/SC V = Device Code

    marking CODE W2D

    Abstract: marking w2d
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1G126 353/SC marking CODE W2D marking w2d

    V = Device Code

    Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


    Original     		PDF MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D

    diode Marking code v3

    Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
    Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74HC1G14 MC74HC 353/SC diode Marking code v3 sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64

    V = Device Code

    Abstract: MC74VHC1G00
    Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G00 353/SC V = Device Code

    Wafer Fab Plant Codes ST

    Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
    Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G32 MC74HC 353/SC Wafer Fab Plant Codes ST V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08

    V = Device Code

    Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE
    Text: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    Original     		PDF MC74VHC1GT32 V = Device Code diode Marking code v3 on semi aa sot353 TOREX TOP CODE

    V = Device Code

    Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
    Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G86 353/SC V = Device Code vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A

    PC 74 HCT 32 P

    Abstract: U-046 V = Device Code
    Text: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low


    Original     		PDF MC74VHC1G01 PC 74 HCT 32 P U-046 V = Device Code

    marking H5 sot 23-5

    Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
    Text: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G132 marking H5 sot 23-5 vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code

    V = Device Code

    Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
    Text: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1G135 V = Device Code ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5

    V = Device Code

    Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
    Text: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74VHC1G04 353/SC V = Device Code marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode

    AND8004/D

    Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
    Text: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G00 MC74HC 353/SC AND8004/D V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004

    t08 sot-23

    Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
    Text: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    Original     		PDF MC74VHC1GT08 t08 sot-23 ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3

    T138A

    Abstract: U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code
    Text: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1GU04 MC74HC 353/SC T138A U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code

    MC74HC

    Abstract: marking t132 marking code V6 diode V = Device Code
    Text: MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G04 MC74HC 353/SC marking t132 marking code V6 diode V = Device Code

    SOT23 "Marking Code" t04

    Abstract: marking L5 sot363 marking h2 SOT353 ON Semiconductor marking V = Device Code sot363 marking code ca marking 62 ON Semi 34 sot363 t04 sot 23 marking code V6 diode
    Text: MC74VHC1GT04 Inverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1GT04 SOT23 "Marking Code" t04 marking L5 sot363 marking h2 SOT353 ON Semiconductor marking V = Device Code sot363 marking code ca marking 62 ON Semi 34 sot363 t04 sot 23 marking code V6 diode

    wz 74 marking

    Abstract: t138a V = Device Code
    Text: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G02 MC74HC 353/SC wz 74 marking t138a V = Device Code

    marking t132

    Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
    Text: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G08 353/SC marking t132 marking code V6 diode V = Device Code

    vsop8 package outline

    Abstract: vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc
    Text: MC74VHC1G09 2-Input AND Gate with Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G09 vsop8 package outline vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc

    H2D MARKING CODE

    Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
    Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G08 MC74HC 353/SC H2D MARKING CODE marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3

    B 647 AC transistor

    Abstract: 142 transistor Marking WZS
    Text: SIEMENS BCR 142 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor R i=22kii, R2=47ki2 Marking Ordering Code BCR 142 WZs Pin Configuration Q62702-C2259 1=B 2=E Package o II CO Type SOT-23


    OCR Scan     		PDF 22kii, 47ki2) Q62702-C2259 OT-23 300ps; B 647 AC transistor 142 transistor Marking WZS