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    SOT-23 W2 Search Results

    SOT-23 W2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 W2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Package Information SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate


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    PDF OT-23 177cm 330cm OT-23

    KA7812

    Abstract: 7103 A0 SOT-23 KA7812 INTEGRATED CIRCUIT polystyrene film SOT23 JEDEC standard orientation SOT23 JEDEC standard
    Text: SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


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    PDF OT-23 KA7812 7103 A0 SOT-23 KA7812 INTEGRATED CIRCUIT polystyrene film SOT23 JEDEC standard orientation SOT23 JEDEC standard

    Code sot-23 on semiconductor

    Abstract: wc sot23 rd sot23
    Text: SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


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    PDF OT-23 177cm 330cm Code sot-23 on semiconductor wc sot23 rd sot23

    marking y1 sot-23

    Abstract: SOT-23 MARKING w5 wT 3 sot23 ZENER Y1 SOT-23 SOT-23 marking y1 sot 23 marking code Z9 marking y4 sot-23 marking code w2 sot23 marking 301 sot-23 sot23 Z15 marking
    Text: BZX84C2V4 THRU BZX84C51 410mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~51V SOT-23 PACKAGE Pb Free Product FEATURES SOT-23 * Planar Die construction * 410mW Power Dissipation .056 1.40 .103(2.60) .047(1.20) MECHANICAL DATA .007(.20)MIN .119(3.00) .110(2.80)


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    PDF BZX84C2V4 410mW OT-23 BZX84C51 OT-23 OT-23, MIL-STD-202E, BZX84C2V4 marking y1 sot-23 SOT-23 MARKING w5 wT 3 sot23 ZENER Y1 SOT-23 SOT-23 marking y1 sot 23 marking code Z9 marking y4 sot-23 marking code w2 sot23 marking 301 sot-23 sot23 Z15 marking

    4T SOT 23

    Abstract: MMBD301 SOT23 JEDEC standard orientation
    Text: DISCRETE POWER AND SIGNAL TECHNOLOGIES MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4T SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted


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    PDF MMBD301 OT-23 O-236AB O236AB 4T SOT 23 MMBD301 SOT23 JEDEC standard orientation

    MMBD701

    Abstract: D0 sot23 A0 SOT23 FS PKG CODE 49
    Text: MMBD701 CONNECTION DIAGRAM 3 3 PACKAGE 5HF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature


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    PDF MMBD701 OT-23 O-236AB O236AB MMBD701 D0 sot23 A0 SOT23 FS PKG CODE 49

    SOT23 JEDEC standard orientation

    Abstract: SOT-23 4TF MMBD301
    Text: MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4TF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature


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    PDF MMBD301 OT-23 O-236AB O236AB SOT23 JEDEC standard orientation SOT-23 4TF MMBD301

    zener sot23

    Abstract: wT 3 sot23 ZENER
    Text: BZX84C SERIES PB FREE PRODUCT SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 - 75 Volts POWER 410 mWatts SOT- 23 Unit: inch mm FEATURES • Planar Die construction .056(1.40) MECHANICAL DATA • Case: SOT-23, Molded Plastic .083(2.10) .066(1.70) • Terminals: Solderable per MIL-STD-202, Method 208


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    PDF BZX84C OT-23, MIL-STD-202, 410mW zener sot23 wT 3 sot23 ZENER

    BZT52C5V1-V

    Abstract: BZT52C4V7-v 6 21 X2 marking code sot 353 BZT52B2V7-V BZT52-C22V X4 diode zener BZT52B33V BZT52B20V 6 21 X2 marking code sot 323 bzt52c18-v
    Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with


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    PDF BZT52-V-Series OT-23 BZX84 2002/95/EC 2002/96/EC OD-123 D-74025 21-Apr-05 BZT52C5V1-V BZT52C4V7-v 6 21 X2 marking code sot 353 BZT52B2V7-V BZT52-C22V X4 diode zener BZT52B33V BZT52B20V 6 21 X2 marking code sot 323 bzt52c18-v

    FAIRCHILD SOT-23 MARK 1a

    Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.


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    PDF BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A FAIRCHILD SOT-23 MARK 1a BC846 SOT23 NPN sot23 mark NF 847C BC846 BC847 fAIRCHILD BC847b

    BZT52B5V6-V

    Abstract: BZT52C39-V Zener diode wz 140 BZT52C16-V bzt52vseries bzt52b5v1-v BZT52B22 BZT52C5V1-V BZT52-V BZT52C3V3-V
    Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with


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    PDF BZT52-V-Series OT-23 BZX84 2002/95/EC 2002/96/EC OD-123 08-Apr-05 BZT52B5V6-V BZT52C39-V Zener diode wz 140 BZT52C16-V bzt52vseries bzt52b5v1-v BZT52B22 BZT52C5V1-V BZT52-V BZT52C3V3-V

    X4 diode zener

    Abstract: BZT52C24V bzt52s BZT52-C12V
    Text: BZT52-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with


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    PDF BZT52-Series OT-23 BZX84 OD-123 D-74025 10-Mar-05 X4 diode zener BZT52C24V bzt52s BZT52-C12V

    VISHAY WL ZENER

    Abstract: BZT52B16-V BZT52C5V6 BZT52C2V4-V BZT52C2V7-V BZT52C3V0-V BZT52C3V3-V BZX84 DZ23 bzt52vseries
    Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with


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    PDF BZT52-V-Series OT-23 BZX84 2002/95/EC 2002/96/EC OD-123 18-Jul-08 VISHAY WL ZENER BZT52B16-V BZT52C5V6 BZT52C2V4-V BZT52C2V7-V BZT52C3V0-V BZT52C3V3-V DZ23 bzt52vseries

    transistor w2B

    Abstract: No abstract text available
    Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FUNCTIONAL BLOCK DIAGRAM Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages Output short-circuit protection


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    PDF OT-66 ADG3231 OT-23 ADG3231 ADG3231BRJ-REEL ADG3231BRJ-REEL7 ADG3231BRJZ-REEL ADG3231BRJZ-REEL71 ADG3231BRYZ-REEL71 transistor w2B

    transistor w2B

    Abstract: ADG3231BRJ-REEL ADG3231 ADG3231BRJ-REEL7 ADG3231BRJZ-REEL SOT-66
    Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FUNCTIONAL BLOCK DIAGRAM Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages Output short-circuit protection


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    PDF OT-66 ADG3231 OT-23 ADG3231 ADG3231BRJ-REEL ADG3231BRJ-REEL7 ADG3231BRJZ-REEL ADG3231BRJZ-REEL71 ADG3231BRYZ-REEL71 transistor w2B ADG3231BRJ-REEL ADG3231BRJ-REEL7 SOT-66

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 PZT3904 C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.


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    PDF 2N3904 MMBT3904 PZT3904 2N3904 MMBT3904 OT-23 OT-223

    marking w0 sot-23

    Abstract: FHZ02W15V FHZ02W3.3V FHZ84C10 FHZ5221B sot23 Marking f7 FHZ02W6.2V FHZ02 FHZ5223B FHZ5224B
    Text: SOT-23 稳压二极管(SOT-23 ZENER DIODES) Pinout: 型号 TYPE FHZ5217B FHZ5219B FHZ5221B FHZ5222B FHZ5223B FHZ5224B FHZ5225B FHZ5226B FHZ5227B FHZ5228B FHZ5229B FHZ5230B FHZ5231B FHZ5232B FHZ5233B FHZ5234B FHZ5235B FHZ5236B FHZ5237B FHZ5238B FHZ5239B


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    PDF OT-23 FHZ5217B FHZ5219B FHZ5221B FHZ5222B FHZ5223B FHZ5224B FHZ5225B FHZ5226B marking w0 sot-23 FHZ02W15V FHZ02W3.3V FHZ84C10 FHZ5221B sot23 Marking f7 FHZ02W6.2V FHZ02 FHZ5223B FHZ5224B

    marking P2 sot-23

    Abstract: wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401 MMBD1401A MMBD1403 MMBD1404 MMBD1405 1405A
    Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF OT-23 MMBD1401 MMBD1404 MMBD1403 MMBD1405 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401A MMBD1404 MMBD1405 1405A

    ADG3231

    Abstract: ADG3231BRJ-REEL ADG3231BRJ-REEL7 sot66 ADG3231BRYZ-REEL1
    Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC1 VCC2 Y A GND APPLICATIONS 03298-001 Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages


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    PDF OT-66 ADG3231 OT-23 ADG3231 ADG3231BRJ-REEL ADG3231BRJ-REEL7 ADG3231BRJZ-REEL1 ADG3231BRJZ-REEL71 ADG3231BRYZ-REEL1 ADG3231BRJ-REEL ADG3231BRJ-REEL7 sot66 ADG3231BRYZ-REEL1

    a13 sot23-5

    Abstract: sine wave generator using LM358 EME-7351 A14* marking sot23-5 SOT23 M7 simple LM324 COMPARATOR CIRCUIT a13 marking sot23 Analog devices marking Information PACKAGE SOIC eme marking sot23 LMV321M5
    Text: t s e all r o t a r a p m o C & SPRING p m Sm SI SC7 NGLE 0-5/ SOT +IN 1 23-5 Op A in D l r o W e h t s ’ e s On thi for V- 2 LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 LMV824 A UT O • Rail-to-Rail Output 50% Smaller than SOT-23 Supply Operation build an we


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    PDF LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 OT-23 a13 sot23-5 sine wave generator using LM358 EME-7351 A14* marking sot23-5 SOT23 M7 simple LM324 COMPARATOR CIRCUIT a13 marking sot23 Analog devices marking Information PACKAGE SOIC eme marking sot23 LMV321M5

    transistor bel 100

    Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


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    PDF MMBTA14 PZTA14 OT-23 OT-223 transistor bel 100 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    bel 188 transistor

    Abstract: CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


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    PDF MMBTA14 PZTA14 OT-23 OT-223 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    671 transistor

    Abstract: S5M1
    Text: PACKAGE DIMENSIONS Dimensions in Milimeters SOT-23 2 9 0 . 020 SOT-89 4 50 . 0 20 4 l _ ci rfi 671 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters 672 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters 673 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters


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    PDF OT-23 OT-89 O-92/TO-92S/TO-92L 671 transistor S5M1

    transistor b 647 c

    Abstract: No abstract text available
    Text: PACKAGE DIMENSIONS Dimensions in Milimeters SOT-23 2 9 0 . o 20 SOT-89 . 1 5 0 0 20 _ Ì L _ I 1— $ - 641 ELECTRONICS PACKAGE DIMENSIONS 642 ELECTRONICS PACKAGE DIMENSIONS 643 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters 644 ELECTRONICS PACKAGE DIMENSIONS


    OCR Scan
    PDF OT-23 OT-89 O-92/TO-92S/TO-92L transistor b 647 c