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    SOT-23 W2 Search Results

    SOT-23 W2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 W2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Package Information SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate


    Original     		PDF OT-23 177cm 330cm OT-23

    KA7812

    Abstract: 7103 A0 SOT-23 KA7812 INTEGRATED CIRCUIT polystyrene film SOT23 JEDEC standard orientation SOT23 JEDEC standard
    Text: SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


    Original     		PDF OT-23 KA7812 7103 A0 SOT-23 KA7812 INTEGRATED CIRCUIT polystyrene film SOT23 JEDEC standard orientation SOT23 JEDEC standard

    Code sot-23 on semiconductor

    Abstract: wc sot23 rd sot23
    Text: SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


    Original     		PDF OT-23 177cm 330cm Code sot-23 on semiconductor wc sot23 rd sot23

    marking y1 sot-23

    Abstract: SOT-23 MARKING w5 wT 3 sot23 ZENER Y1 SOT-23 SOT-23 marking y1 sot 23 marking code Z9 marking y4 sot-23 marking code w2 sot23 marking 301 sot-23 sot23 Z15 marking
    Text: BZX84C2V4 THRU BZX84C51 410mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~51V SOT-23 PACKAGE Pb Free Product FEATURES SOT-23 * Planar Die construction * 410mW Power Dissipation .056 1.40 .103(2.60) .047(1.20) MECHANICAL DATA .007(.20)MIN .119(3.00) .110(2.80)


    Original     		PDF BZX84C2V4 410mW OT-23 BZX84C51 OT-23 OT-23, MIL-STD-202E, BZX84C2V4 marking y1 sot-23 SOT-23 MARKING w5 wT 3 sot23 ZENER Y1 SOT-23 SOT-23 marking y1 sot 23 marking code Z9 marking y4 sot-23 marking code w2 sot23 marking 301 sot-23 sot23 Z15 marking

    4T SOT 23

    Abstract: MMBD301 SOT23 JEDEC standard orientation
    Text: DISCRETE POWER AND SIGNAL TECHNOLOGIES MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4T SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted


    Original     		PDF MMBD301 OT-23 O-236AB O236AB 4T SOT 23 MMBD301 SOT23 JEDEC standard orientation

    MMBD701

    Abstract: D0 sot23 A0 SOT23 FS PKG CODE 49
    Text: MMBD701 CONNECTION DIAGRAM 3 3 PACKAGE 5HF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature


    Original     		PDF MMBD701 OT-23 O-236AB O236AB MMBD701 D0 sot23 A0 SOT23 FS PKG CODE 49

    SOT23 JEDEC standard orientation

    Abstract: SOT-23 4TF MMBD301
    Text: MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4TF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature


    Original     		PDF MMBD301 OT-23 O-236AB O236AB SOT23 JEDEC standard orientation SOT-23 4TF MMBD301

    zener sot23

    Abstract: wT 3 sot23 ZENER
    Text: BZX84C SERIES PB FREE PRODUCT SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 - 75 Volts POWER 410 mWatts SOT- 23 Unit: inch mm FEATURES • Planar Die construction .056(1.40) MECHANICAL DATA • Case: SOT-23, Molded Plastic .083(2.10) .066(1.70) • Terminals: Solderable per MIL-STD-202, Method 208


    Original     		PDF BZX84C OT-23, MIL-STD-202, 410mW zener sot23 wT 3 sot23 ZENER

    BZT52C5V1-V

    Abstract: BZT52C4V7-v 6 21 X2 marking code sot 353 BZT52B2V7-V BZT52-C22V X4 diode zener BZT52B33V BZT52B20V 6 21 X2 marking code sot 323 bzt52c18-v
    Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with


    Original     		PDF BZT52-V-Series OT-23 BZX84 2002/95/EC 2002/96/EC OD-123 D-74025 21-Apr-05 BZT52C5V1-V BZT52C4V7-v 6 21 X2 marking code sot 353 BZT52B2V7-V BZT52-C22V X4 diode zener BZT52B33V BZT52B20V 6 21 X2 marking code sot 323 bzt52c18-v

    FAIRCHILD SOT-23 MARK 1a

    Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.


    Original     		PDF BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A FAIRCHILD SOT-23 MARK 1a BC846 SOT23 NPN sot23 mark NF 847C BC846 BC847 fAIRCHILD BC847b

    BZT52B5V6-V

    Abstract: BZT52C39-V Zener diode wz 140 BZT52C16-V bzt52vseries bzt52b5v1-v BZT52B22 BZT52C5V1-V BZT52-V BZT52C3V3-V
    Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with


    Original     		PDF BZT52-V-Series OT-23 BZX84 2002/95/EC 2002/96/EC OD-123 08-Apr-05 BZT52B5V6-V BZT52C39-V Zener diode wz 140 BZT52C16-V bzt52vseries bzt52b5v1-v BZT52B22 BZT52C5V1-V BZT52-V BZT52C3V3-V

    X4 diode zener

    Abstract: BZT52C24V bzt52s BZT52-C12V
    Text: BZT52-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with


    Original     		PDF BZT52-Series OT-23 BZX84 OD-123 D-74025 10-Mar-05 X4 diode zener BZT52C24V bzt52s BZT52-C12V

    VISHAY WL ZENER

    Abstract: BZT52B16-V BZT52C5V6 BZT52C2V4-V BZT52C2V7-V BZT52C3V0-V BZT52C3V3-V BZX84 DZ23 bzt52vseries
    Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with


    Original     		PDF BZT52-V-Series OT-23 BZX84 2002/95/EC 2002/96/EC OD-123 18-Jul-08 VISHAY WL ZENER BZT52B16-V BZT52C5V6 BZT52C2V4-V BZT52C2V7-V BZT52C3V0-V BZT52C3V3-V DZ23 bzt52vseries

    transistor w2B

    Abstract: No abstract text available
    Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FUNCTIONAL BLOCK DIAGRAM Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages Output short-circuit protection


    Original     		PDF OT-66 ADG3231 OT-23 ADG3231 ADG3231BRJ-REEL ADG3231BRJ-REEL7 ADG3231BRJZ-REEL ADG3231BRJZ-REEL71 ADG3231BRYZ-REEL71 transistor w2B

    transistor w2B

    Abstract: ADG3231BRJ-REEL ADG3231 ADG3231BRJ-REEL7 ADG3231BRJZ-REEL SOT-66
    Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FUNCTIONAL BLOCK DIAGRAM Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages Output short-circuit protection


    Original     		PDF OT-66 ADG3231 OT-23 ADG3231 ADG3231BRJ-REEL ADG3231BRJ-REEL7 ADG3231BRJZ-REEL ADG3231BRJZ-REEL71 ADG3231BRYZ-REEL71 transistor w2B ADG3231BRJ-REEL ADG3231BRJ-REEL7 SOT-66

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 PZT3904 C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.


    Original     		PDF 2N3904 MMBT3904 PZT3904 2N3904 MMBT3904 OT-23 OT-223

    marking w0 sot-23

    Abstract: FHZ02W15V FHZ02W3.3V FHZ84C10 FHZ5221B sot23 Marking f7 FHZ02W6.2V FHZ02 FHZ5223B FHZ5224B
    Text: SOT-23 稳压二极管（SOT-23 ZENER DIODES） Pinout: 型号 TYPE FHZ5217B FHZ5219B FHZ5221B FHZ5222B FHZ5223B FHZ5224B FHZ5225B FHZ5226B FHZ5227B FHZ5228B FHZ5229B FHZ5230B FHZ5231B FHZ5232B FHZ5233B FHZ5234B FHZ5235B FHZ5236B FHZ5237B FHZ5238B FHZ5239B


    Original     		PDF OT-23 FHZ5217B FHZ5219B FHZ5221B FHZ5222B FHZ5223B FHZ5224B FHZ5225B FHZ5226B marking w0 sot-23 FHZ02W15V FHZ02W3.3V FHZ84C10 FHZ5221B sot23 Marking f7 FHZ02W6.2V FHZ02 FHZ5223B FHZ5224B

    marking P2 sot-23

    Abstract: wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401 MMBD1401A MMBD1403 MMBD1404 MMBD1405 1405A
    Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF OT-23 MMBD1401 MMBD1404 MMBD1403 MMBD1405 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401A MMBD1404 MMBD1405 1405A

    ADG3231

    Abstract: ADG3231BRJ-REEL ADG3231BRJ-REEL7 sot66 ADG3231BRYZ-REEL1
    Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC1 VCC2 Y A GND APPLICATIONS 03298-001 Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages


    Original     		PDF OT-66 ADG3231 OT-23 ADG3231 ADG3231BRJ-REEL ADG3231BRJ-REEL7 ADG3231BRJZ-REEL1 ADG3231BRJZ-REEL71 ADG3231BRYZ-REEL1 ADG3231BRJ-REEL ADG3231BRJ-REEL7 sot66 ADG3231BRYZ-REEL1

    a13 sot23-5

    Abstract: sine wave generator using LM358 EME-7351 A14* marking sot23-5 SOT23 M7 simple LM324 COMPARATOR CIRCUIT a13 marking sot23 Analog devices marking Information PACKAGE SOIC eme marking sot23 LMV321M5
    Text: t s e all r o t a r a p m o C & SPRING p m Sm SI SC7 NGLE 0-5/ SOT +IN 1 23-5 Op A in D l r o W e h t s ’ e s On thi for V- 2 LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 LMV824 A UT O • Rail-to-Rail Output 50% Smaller than SOT-23 Supply Operation build an we


    Original     		PDF LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 OT-23 a13 sot23-5 sine wave generator using LM358 EME-7351 A14* marking sot23-5 SOT23 M7 simple LM324 COMPARATOR CIRCUIT a13 marking sot23 Analog devices marking Information PACKAGE SOIC eme marking sot23 LMV321M5

    transistor bel 100

    Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBTA14 PZTA14 OT-23 OT-223 transistor bel 100 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    bel 188 transistor

    Abstract: CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBTA14 PZTA14 OT-23 OT-223 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    671 transistor

    Abstract: S5M1
    Text: PACKAGE DIMENSIONS Dimensions in Milimeters SOT-23 2 9 0 . 020 SOT-89 4 50 . 0 20 4 l _ ci rfi 671 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters 672 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters 673 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters


    OCR Scan     		PDF OT-23 OT-89 O-92/TO-92S/TO-92L 671 transistor S5M1

    transistor b 647 c

    Abstract: No abstract text available
    Text: PACKAGE DIMENSIONS Dimensions in Milimeters SOT-23 2 9 0 . o 20 SOT-89 . 1 5 0 0 20 _ Ì L _ I 1— $ - 641 ELECTRONICS PACKAGE DIMENSIONS 642 ELECTRONICS PACKAGE DIMENSIONS 643 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters 644 ELECTRONICS PACKAGE DIMENSIONS


    OCR Scan     		PDF OT-23 OT-89 O-92/TO-92S/TO-92L transistor b 647 c