Untitled
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D SILICON PLANAR SWITCHING DIODE BAL99 SOT-23 3 MARKING- TF Pin Configuration 1 = NC 2 = ANODE 3 = CATHODE 1 ABSOLUTE MAXIMUM RATINGS DESCRIPTION 2 SYMBOL VALUE UNIT Continuous Reverse Voltage Peak Forward Current Total Device Dissipation FR-5 Board*
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BAL99
OT-23
OT-23
10K/reel
gm/10K
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RB425D
Abstract: No abstract text available
Text: RB425D SOT-23-3L Schottky barrier Diodes + FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 + 2. 92¡ À0. 05 RB425D - Marking: D3L
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RB425D
OT-23-3L
100mA
RB425D
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RB425D
Abstract: No abstract text available
Text: SOT-23-3L Schottky barrier Diodes + FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 + 2. 92¡ À0. 05 RB425D - Marking: D3L Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃
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OT-23-3L
RB425D
100mA
RB425D
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RB495D
Abstract: marking a0 A0025
Text: RB495D SOT-23-3L Schottky barrier Diodes 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 92¡ À0. 05 RB495D Marking: D3Q Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃
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RB495D
OT-23-3L
200mA
RB495D
marking a0
A0025
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A005
Abstract: RB495D
Text: SOT-23-3L Schottky barrier Diodes 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 92¡ À0. 05 RB495D Marking: D3Q Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃
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OT-23-3L
RB495D
200mA
A005
RB495D
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS184LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.
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L1SS184LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS181LT1G z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 2.2pF (typ.) z Pb-Free Package is Available. 1
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L1SS181LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A)
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LRB551V-30T1GG
LRB551V-30T1G
3000/Tape
LRB551V-30T3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)
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LRB521S-30T1
SC-79/SOD523)
200mA
200mA)
OD523/SC-79
LRB521S-30T1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)
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LRB521S-30T1
SC-79/SOD523)
200mA
200mA)
OD523/SC-79
LRB521S-30T1
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SOT-23 MARKING 20A
Abstract: marking code 5A6 sot 26 zener 5A6 ON marking 5A6 SOT-23 5A6 marking 5A6 SOT23 ZENER DIODES SOT-23 182 5a6 sot23 marking 33a zener sot23 marking 33a sot23
Text: MMBZ5V6ALT1 Series Preferred Device 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors SOT−23 Dual Common Anode Zeners for ESD Protection http://onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They
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OT-23
12sured
MMBZ33VALT1
SOT-23 MARKING 20A
marking code 5A6 sot 26
zener 5A6 ON
marking 5A6
SOT-23 5A6
marking 5A6 SOT23
ZENER DIODES SOT-23 182
5a6 sot23
marking 33a zener sot23
marking 33a sot23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS226LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.
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L1SS226LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors MMBZ5V6ALT1 Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They
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236AB)
MMBZ33VALT1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ5V6ALT1 Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They
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OT-23
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LRB751G-40T1G
Abstract: LRB751G-40T3G SC-75
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB751G-40T1G zApplications General rectification LRB751G-40T1G 1 zFeatures 1 Small power mold type. SO D-723) 2) Low VF 3) High reliability 2 SOD-723 4) Pb-Free package is available zConstruction Silicon epitaxial planar
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LRB751G-40T1G
D-723)
OD-723
60Hz1cyc
330mm
360mm
LRB751G-40T1G
LRB751G-40T3G
SC-75
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marking code 5A6 sot 26
Abstract: zener 5A6 5A6 marking code marking code AC sot 23-5 zener 5A6 ON 5a6 zener marking 27A sot-23 LMBZ27VALT1G marking 5A6 SOT23 5a6 sot23
Text: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ6V8ALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They
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OT-23
marking code 5A6 sot 26
zener 5A6
5A6 marking code
marking code AC sot 23-5
zener 5A6 ON
5a6 zener
marking 27A sot-23
LMBZ27VALT1G
marking 5A6 SOT23
5a6 sot23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZXXALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They
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OT-23
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L6 marking 5-pin
Abstract: BAR 17
Text: Silicon PIN Diodes BAR 17 »Current-controlled RF resistor for RF attenuation i Switching applications above 1 MHz Type Marking Ordering code tape and reel Pin configuration Package BAR 17 L6 Q 62702-A 7 8 5 1o- f» -o3 SOT-23 Maximum Ratings Parameter
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OCR Scan
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2702-A
OT-23
L6 marking 5-pin
BAR 17
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 15-04 Features • DBS mixer applications to 12 GHz • Low noise figure • Low barrier type 5:1 Type Ordering Code ' tape and reel BAT 15-04 Pin Configuration 1 2 Marking Package S8 SOT-23 3 | Q62702-A504 Maximum Ratings
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OCR Scan
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Q62702-A504
OT-23
EHD07082
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBD 6050 Silicon Switching Diode For high-speed switching applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8-m m tape Package SMBD 6 0 5 0 S5A upon request upon request SOT 23 M axim um ratings Param eter Symbol Reverse voltage
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OCR Scan
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PDF
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ZENER DIODES SOT-23
Abstract: marking 18j sot23 MARKING 8S SOT-23
Text: CÎ! |t y p e n o . ZENER DIODES SOT-23 CASE ZZK TEST ZENER CURRENT VOLTAGE IZ=.25mA @10%Mod MAX VR V MARKING VZ +5% Nominal ohms MAX ohms Max MMBZ5221BL 20 2.4 1200 30 100 1.0 18A MMBZ5222BL MMBZ5223BL MMBZ5224BL 20 20 20 20 20 2.5 2.7 30 30 18B 30 29 28
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OCR Scan
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MMBZ5221BL
MMBZ5222BL
MMBZ5223BL
MMBZ5224BL
MMBZ5225BL
MMBZ5226BL
MMBZ5227BL
MMBZ5228BL
MMBZ5229BL
MMBZ5230BL
ZENER DIODES SOT-23
marking 18j sot23
MARKING 8S SOT-23
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1403
Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Text: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.
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OCR Scan
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MMBD1401
OT-23
MMBD1404
UMBD1403
MMBD1405
b50113D
1403
R20 marking
M3325
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PDF
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L43 BAT54
Abstract: SC BAT54C SOT23 397-I L43 SOT-23
Text: DISCRETE POWER AND SIGNAL TECHNOLOGIES FAIRCHILD BAT54/A/C/S MICDNDUCTQR n CONNECTION PACKAGE | 1 MARKING BAT54 L4P BAT54C L43 BAT54A L42 BAT54S L44 2 NC BAT54C V I B A T 5 4 AN 3 *t i +n ^B A T^ SOT-23 TO-236AB Low DIAGRAMS 1 | 2 | BAT54S 2 1 Schottky Barrier Diode
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OCR Scan
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BAT54/A/C/S
OT-23
O-236AB
BAT54
BAT54C
BAT54A
BAT54S
BAT54C
BAT54A
BAT54S
L43 BAT54
SC BAT54C SOT23
397-I
L43 SOT-23
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D S E M IC O N D U C T O R DISCRETE POWER AND SIGNAL TECHNOLOGIES BAT54/A/C/S tm CONNECTION DIAGRAMS s PACKAGE BAT54 j I B \ T 5 4 A >> r ~ i SOT-23 TO-236AB Low f T 1 MARKING BAT54 L4P BAT54C L43 BAT54A L42 BAT54S L44 2 NC T 1 2 3 3 | | BAT54S
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OCR Scan
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BAT54/A/C/S
BAT54
OT-23
O-236AB
BAT54
BAT54C
BAT54A
BAT54S
BAT54S
BAT54C
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