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    SOT-25 0B Search Results

    SOT-25 0B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-25 0B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MUN5111

    Abstract: MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132
    Text: MUN5111DW Series 2 3 Dual Bias Resistor Transistor PNP Silicon 1 6 5 1 4 5 6 2 4 3 SOT-363 SC-88 PNP+PNP M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value


    Original     		PDF MUN5111DW OT-363 SC-88) MUN5111 OT-363 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132

    TW88

    Abstract: MUN5111 MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131
    Text: MUN5111DW Series 6 Dual Bias Resistor Transistor PNP Silicon 5 4 R1 Q2 6 5 1 Q1 R2 2 2 3 SOT-363 SC-88 R1 1 4 R2 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol


    Original     		PDF MUN5111DW OT-363 SC-88) 20-Jan-09 MUN5111 OT-363 TW88 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131

    MUN5111

    Abstract: MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132
    Text: MUN5111DW Series 2 3 Dual Bias Resistor Transistor PNP Silicon 1 6 5 1 * “G” Lead Pb -Free 4 5 6 2 4 3 SOT-363(SC-88) PNP+PNP M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous


    Original     		PDF MUN5111DW OT-363 SC-88) MUN5111 OT-363 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132

    6A marking sot23

    Abstract: BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING
    Text: SEMICONDUCTOR BC817 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 6A 1 2 Item Marking Description Device Mark 6 BC817 hFE Grade A 16 A , 25(B) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method


    Original     		PDF BC817 OT-23 6A marking sot23 BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING

    MUN5111

    Abstract: MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132
    Text: MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon 6 5 R1 Q2 R2 1 4 6 5 R2 1 Q1 R1 2 2 4 3 SOT-363 SC-88 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol


    Original     		PDF MUN5111DW OT-363 SC-88) 20-Jan-09 MUN5111 OT-363 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132

    BC807

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC807 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 5A 1 2 Item Marking Description Device Mark 5 BC807 hFE Grade A 16 A , 25(B), 40(C) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method


    Original     		PDF BC807 OT-23 BC807

    SCK 035 thermistor

    Abstract: thermistor SCK 057 TC77-XXMXX TC77 SPI sck 108 thermistor tc77 sck 108 sck 057 E4 SOT-23-5 CP57
    Text: TC77 带 SPI 接口的温度传感器 特性 说明 • 5引脚 SOT-23A 和8引脚SOIC 封装的数字温度传 感器 • 以 13 位数字字格式输出温度值 • SPI 和 MICROWIRE 兼容接口 • 固态温度检测 • +25°C 至 +65°C 的精度为 ±1°C （最大值）


    Original     		PDF OT-23A OT-23-5 DS20092A SCK 035 thermistor thermistor SCK 057 TC77-XXMXX TC77 SPI sck 108 thermistor tc77 sck 108 sck 057 E4 SOT-23-5 CP57

    SOT 363 marking 67

    Abstract: MUN5111DW1T1 MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 MUN5114DW1T1G marking CODE 001
    Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor


    Original     		PDF MUN5111DW1T1 OT-363 MUN5111DW1T1/D SOT 363 marking 67 MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 MUN5114DW1T1G marking CODE 001

    NSBA113EDXV6T1

    Abstract: No abstract text available
    Text: NSBA114EDXV6T1, NSBA114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSBA114EDXV6T1, NSBA114EDXV6T5 NSBA114EDXV6T1 OT-563 NSBA113EDXV6T1

    NSBA124EDP6

    Abstract: No abstract text available
    Text: MUN5112DW1, NSBA124EDXV6, NSBA124EDP6 Dual PNP Bias Resistor Transistors R1 = 22 kW, R2 = 22 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF MUN5112DW1, NSBA124EDXV6, NSBA124EDP6 DTA124ED/D

    NSBA113EDXV6T1

    Abstract: NSBA114EDXV6T1 NSBA114EDXV6T5 NSBA114TDXV6T1 NSBA114YDXV6T1 NSBA124EDXV6T1 NSBA143TDXV6T1 NSBA144EDXV6T1
    Text: NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSBA114EDXV6T1, NSBA114EDXV6T5 NSBA114EDXV6T1 OT-563 NSBA114EDXV6/D NSBA113EDXV6T1 NSBA114EDXV6T1 NSBA114TDXV6T1 NSBA114YDXV6T1 NSBA124EDXV6T1 NSBA143TDXV6T1 NSBA144EDXV6T1

    NSBA113EDXV6T1

    Abstract: NSBA114EDXV6T1 NSBA114EDXV6T5 NSBA114TDXV6T1 NSBA114YDXV6T1 NSBA123EDXV6T1 NSBA124EDXV6T1 NSBA143TDXV6T1 NSBA144EDXV6T1
    Text: NSBA114EDXV6T1, NSBA114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSBA114EDXV6T1, NSBA114EDXV6T5 NSBA114EDXV6T1 OT-563 NSBA114EDXV6/D NSBA113EDXV6T1 NSBA114EDXV6T1 NSBA114EDXV6T5 NSBA114TDXV6T1 NSBA114YDXV6T1 NSBA123EDXV6T1 NSBA124EDXV6T1 NSBA143TDXV6T1 NSBA144EDXV6T1

    NSBA113EDXV6T1

    Abstract: No abstract text available
    Text: NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSBA114EDXV6T1, NSBA114EDXV6T5 NSBA114EDXV6T1 OT-563 NSBA114EDXV6/D NSBA113EDXV6T1

    34 sot-363

    Abstract: MUN5136DW1T1
    Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5111DW1T1 r14525 MUN5111DW1T1/D 34 sot-363 MUN5136DW1T1

    MUN5136DW1T1

    Abstract: No abstract text available
    Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5111DW1T1 MUN5136DW1T1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF LMUN5111DW1T1 LMUN5111LT1-12/12

    SOT-363 marking 05

    Abstract: MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1
    Text: Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These


    Original     		PDF MUN5111DW1T1 MUN5111dw SOT-363 marking 05 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These


    Original     		PDF LMUN5111DW1T1G

    SOT-363 marking 05

    Abstract: MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These


    Original     		PDF MUN5111DW1T1 MUN5111dw SOT-363 marking 05 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These


    Original     		PDF LMUN51xxDW1T1G LMUN51xxDW1T1G SC-88/SOT-363

    LMUN5111DW1T1

    Abstract: LMUN5112DW1T1 SOT-363 marking 05 LMUN5113DW1T1 LMUN5114DW1T1 LMUN5115DW1T1 LMUN5116DW1T1 LMUN5130DW1T1 LMUN5131DW1T1 LMUN5112
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These


    Original     		PDF LMUN5111DW1T1 SC-88/SOT-363 LMUN5111DW-12/12 LMUN5112DW1T1 SOT-363 marking 05 LMUN5113DW1T1 LMUN5114DW1T1 LMUN5115DW1T1 LMUN5116DW1T1 LMUN5130DW1T1 LMUN5131DW1T1 LMUN5112

    C0034

    Abstract: 0C70 APS1000 u0440 K045
    Text: APS1000 SERIES SURFACE MOUNT SILICON PIN SWITCHING DIODE DESCRIPTION: PACKAGE STYLE SOT-23 SILICON PIN SWITCHING DIODE IN A SOT-23 PACKAGE MILUMETERS DIM A Absolute Maximum Ratings 1 V P.D. 100MA AS SHOWN 250mW @ TC=25°C MIN 28C MAX 3.04 INCHES MIN 01102


    OCR Scan     		PDF APS1000 OT-23 OT-23 100MA 250mW 0CC40 C0034 0CS84 100MHz 0C70 u0440 K045

    BDW 16.24K5000-C2-5

    Abstract: No abstract text available
    Text: 2SC D • flSBSbQS DQQMMBB T H S I E 6 ot* NPN Silicon Planar Transistors BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 433 0-BDY 13 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.


    OCR Scan     		PDF Q62702-D378 Q62702-D378-V4 Q62702-D378-V2 Q62702-D378-V1 Q60204-Y12 A23SbOS BDW 16.24K5000-C2-5

    MMBT200

    Abstract: pn200
    Text: PN200/MMBT200 E J l National J u t Semiconductor PN200 MMBT200 UjT /M/ /#/ M TO-236 SOT-23 TO-92 ED U ' TL/G/10100-5 *C . TL/G/10100-1 P N P G e n e r a l P u r p o s e A m p lif ie r E le c tric a l C h a r a c t e r is t ic s ta = 25°c unless otherwise noted


    OCR Scan     		PDF PN200/MMBT200 PN200 MMBT200 OT-23) MMBT200 pn200