MUN5111
Abstract: MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132
Text: MUN5111DW Series 2 3 Dual Bias Resistor Transistor PNP Silicon 1 6 5 1 4 5 6 2 4 3 SOT-363 SC-88 PNP+PNP M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value
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MUN5111DW
OT-363
SC-88)
MUN5111
OT-363
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
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PDF
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TW88
Abstract: MUN5111 MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131
Text: MUN5111DW Series 6 Dual Bias Resistor Transistor PNP Silicon 5 4 R1 Q2 6 5 1 Q1 R2 2 2 3 SOT-363 SC-88 R1 1 4 R2 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol
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Original
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MUN5111DW
OT-363
SC-88)
20-Jan-09
MUN5111
OT-363
TW88
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
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PDF
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MUN5111
Abstract: MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132
Text: MUN5111DW Series 2 3 Dual Bias Resistor Transistor PNP Silicon 1 6 5 1 * “G” Lead Pb -Free 4 5 6 2 4 3 SOT-363(SC-88) PNP+PNP M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous
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Original
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MUN5111DW
OT-363
SC-88)
MUN5111
OT-363
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
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PDF
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6A marking sot23
Abstract: BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING
Text: SEMICONDUCTOR BC817 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 6A 1 2 Item Marking Description Device Mark 6 BC817 hFE Grade A 16 A , 25(B) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method
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Original
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BC817
OT-23
6A marking sot23
BC817
SOT23 marking 6A
marking 6A SOT 23
6A MARKING
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PDF
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MUN5111
Abstract: MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132
Text: MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon 6 5 R1 Q2 R2 1 4 6 5 R2 1 Q1 R1 2 2 4 3 SOT-363 SC-88 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol
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Original
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MUN5111DW
OT-363
SC-88)
20-Jan-09
MUN5111
OT-363
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
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PDF
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BC807
Abstract: No abstract text available
Text: SEMICONDUCTOR BC807 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 5A 1 2 Item Marking Description Device Mark 5 BC807 hFE Grade A 16 A , 25(B), 40(C) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method
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Original
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BC807
OT-23
BC807
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PDF
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SCK 035 thermistor
Abstract: thermistor SCK 057 TC77-XXMXX TC77 SPI sck 108 thermistor tc77 sck 108 sck 057 E4 SOT-23-5 CP57
Text: TC77 带 SPI 接口的温度传感器 特性 说明 • 5引脚 SOT-23A 和8引脚SOIC 封装的数字温度传 感器 • 以 13 位数字字格式输出温度值 • SPI 和 MICROWIRE 兼容接口 • 固态温度检测 • +25°C 至 +65°C 的精度为 ±1°C (最大值)
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Original
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OT-23A
OT-23-5
DS20092A
SCK 035 thermistor
thermistor SCK 057
TC77-XXMXX
TC77 SPI
sck 108 thermistor
tc77
sck 108
sck 057
E4 SOT-23-5
CP57
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PDF
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SOT 363 marking 67
Abstract: MUN5111DW1T1 MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 MUN5114DW1T1G marking CODE 001
Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor
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Original
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MUN5111DW1T1
OT-363
MUN5111DW1T1/D
SOT 363 marking 67
MUN5111DW1T1G
MUN5112DW1T1
MUN5112DW1T1G
MUN5113DW1T1
MUN5113DW1T1G
MUN5114DW1T1
MUN5114DW1T1G
marking CODE 001
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PDF
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NSBA113EDXV6T1
Abstract: No abstract text available
Text: NSBA114EDXV6T1, NSBA114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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Original
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NSBA114EDXV6T1,
NSBA114EDXV6T5
NSBA114EDXV6T1
OT-563
NSBA113EDXV6T1
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PDF
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NSBA124EDP6
Abstract: No abstract text available
Text: MUN5112DW1, NSBA124EDXV6, NSBA124EDP6 Dual PNP Bias Resistor Transistors R1 = 22 kW, R2 = 22 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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Original
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MUN5112DW1,
NSBA124EDXV6,
NSBA124EDP6
DTA124ED/D
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PDF
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NSBA113EDXV6T1
Abstract: NSBA114EDXV6T1 NSBA114EDXV6T5 NSBA114TDXV6T1 NSBA114YDXV6T1 NSBA124EDXV6T1 NSBA143TDXV6T1 NSBA144EDXV6T1
Text: NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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Original
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NSBA114EDXV6T1,
NSBA114EDXV6T5
NSBA114EDXV6T1
OT-563
NSBA114EDXV6/D
NSBA113EDXV6T1
NSBA114EDXV6T1
NSBA114TDXV6T1
NSBA114YDXV6T1
NSBA124EDXV6T1
NSBA143TDXV6T1
NSBA144EDXV6T1
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PDF
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NSBA113EDXV6T1
Abstract: NSBA114EDXV6T1 NSBA114EDXV6T5 NSBA114TDXV6T1 NSBA114YDXV6T1 NSBA123EDXV6T1 NSBA124EDXV6T1 NSBA143TDXV6T1 NSBA144EDXV6T1
Text: NSBA114EDXV6T1, NSBA114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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Original
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NSBA114EDXV6T1,
NSBA114EDXV6T5
NSBA114EDXV6T1
OT-563
NSBA114EDXV6/D
NSBA113EDXV6T1
NSBA114EDXV6T1
NSBA114EDXV6T5
NSBA114TDXV6T1
NSBA114YDXV6T1
NSBA123EDXV6T1
NSBA124EDXV6T1
NSBA143TDXV6T1
NSBA144EDXV6T1
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PDF
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NSBA113EDXV6T1
Abstract: No abstract text available
Text: NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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Original
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NSBA114EDXV6T1,
NSBA114EDXV6T5
NSBA114EDXV6T1
OT-563
NSBA114EDXV6/D
NSBA113EDXV6T1
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PDF
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34 sot-363
Abstract: MUN5136DW1T1
Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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Original
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MUN5111DW1T1
r14525
MUN5111DW1T1/D
34 sot-363
MUN5136DW1T1
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PDF
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MUN5136DW1T1
Abstract: No abstract text available
Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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Original
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MUN5111DW1T1
MUN5136DW1T1
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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Original
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LMUN5111DW1T1
LMUN5111LT1-12/12
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PDF
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SOT-363 marking 05
Abstract: MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1
Text: Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These
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Original
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MUN5111DW1T1
MUN5111dw
SOT-363 marking 05
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These
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Original
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LMUN5111DW1T1G
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PDF
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SOT-363 marking 05
Abstract: MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These
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Original
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MUN5111DW1T1
MUN5111dw
SOT-363 marking 05
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These
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Original
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LMUN51xxDW1T1G
LMUN51xxDW1T1G
SC-88/SOT-363
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PDF
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LMUN5111DW1T1
Abstract: LMUN5112DW1T1 SOT-363 marking 05 LMUN5113DW1T1 LMUN5114DW1T1 LMUN5115DW1T1 LMUN5116DW1T1 LMUN5130DW1T1 LMUN5131DW1T1 LMUN5112
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These
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Original
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LMUN5111DW1T1
SC-88/SOT-363
LMUN5111DW-12/12
LMUN5112DW1T1
SOT-363 marking 05
LMUN5113DW1T1
LMUN5114DW1T1
LMUN5115DW1T1
LMUN5116DW1T1
LMUN5130DW1T1
LMUN5131DW1T1
LMUN5112
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PDF
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C0034
Abstract: 0C70 APS1000 u0440 K045
Text: APS1000 SERIES SURFACE MOUNT SILICON PIN SWITCHING DIODE DESCRIPTION: PACKAGE STYLE SOT-23 SILICON PIN SWITCHING DIODE IN A SOT-23 PACKAGE MILUMETERS DIM A Absolute Maximum Ratings 1 V P.D. 100MA AS SHOWN 250mW @ TC=25°C MIN 28C MAX 3.04 INCHES MIN 01102
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OCR Scan
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APS1000
OT-23
OT-23
100MA
250mW
0CC40
C0034
0CS84
100MHz
0C70
u0440
K045
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PDF
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BDW 16.24K5000-C2-5
Abstract: No abstract text available
Text: 2SC D • flSBSbQS DQQMMBB T H S I E 6 ot* NPN Silicon Planar Transistors BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 433 0-BDY 13 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.
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OCR Scan
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Q62702-D378
Q62702-D378-V4
Q62702-D378-V2
Q62702-D378-V1
Q60204-Y12
A23SbOS
BDW 16.24K5000-C2-5
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PDF
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MMBT200
Abstract: pn200
Text: PN200/MMBT200 E J l National J u t Semiconductor PN200 MMBT200 UjT /M/ /#/ M TO-236 SOT-23 TO-92 ED U ' TL/G/10100-5 *C . TL/G/10100-1 P N P G e n e r a l P u r p o s e A m p lif ie r E le c tric a l C h a r a c t e r is t ic s ta = 25°c unless otherwise noted
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OCR Scan
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PN200/MMBT200
PN200
MMBT200
OT-23)
MMBT200
pn200
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PDF
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