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    SOT-252 20V Search Results

    SOT-252 20V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-252 20V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MC4044P

    Abstract: 7660CPA MC14411P 8038ccpd RC4151N ultrasonic proximity detector LM35CZ ICL7660SCPA 344C mc145151p
    Text: Linear, Sensors & Digital Pots TO-5/TO-52 TO-92 TO-220 TO-252 TO-263 DD DIP Call us to see if you can save 10-20%. SOIC & SOP SOT-23 SOT-223 Manufacturer Cross Reference Table Manufacturer Analog Devices Anachip Code Manufacturer Code Manufacturer ADI Fairchild Semiconductor FSC Maxim Corporation


    Original     		PDF O-5/TO-52 O-220 O-252 O-263 OT-23 OT-223 302252CB 302228CB 25275CB 29372CB MC4044P 7660CPA MC14411P 8038ccpd RC4151N ultrasonic proximity detector LM35CZ ICL7660SCPA 344C mc145151p

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE  TO-252 SOT-89 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT06P03 O-252 OT-89 UT06P03 OT-26 UT06P03G-AB3-R UT06P03G-AG6-R UT06P03L-TN3-R UT06P03G-TN3-R

    B08 REGULATOR

    Abstract: voltage regulator sot 223 18BSC TS39100 transistor npn 12V 1A Collector Current
    Text: TS39100 1A Ultra Low Dropout Voltage Regulator SOT-223 TO-252 DPAK Pin Definition: 1. Input 2. Ground (tab) 3. Output General Description The TS39100 are 1A ultra low dropout linear voltage regulators that provide low voltage, high current output from an


    Original     		PDF TS39100 OT-223 O-252 TS39100 400mV B08 REGULATOR voltage regulator sot 223 18BSC transistor npn 12V 1A Collector Current

    2SD965

    Abstract: 2SD965AL 2sd965l 2sd965 transistor 2SD965A
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR 1 SOT-89 FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V 1 TO-252


    Original     		PDF 2SD965/A OT-89 2SD965: 2SD965A: O-252 2SD965L/2SD965AL 2SD965-x-AB3-R 2SD965L-x-AB3-R 2SD965-x-T92-B 2SD965L-x-T92-B 2SD965 2SD965AL 2sd965l 2sd965 transistor 2SD965A

    TRANSISTOR MPS-A44

    Abstract: transistor 400V sot MPSA44
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  1 1 FEATURES TO-252 SOT-89 * Collector-Emitter Voltage: * VCEO=400V UTC MPSA44 * VCEO=350V (UTC MPSA45) * Collector Current up to 300mA 1 1 TO-92 TO-92NL 1 TO-126


    Original     		PDF MPSA44/45 O-252 OT-89 MPSA44) MPSA45) 300mA O-92NL O-126 MPSA44G-AB3-R TRANSISTOR MPS-A44 transistor 400V sot MPSA44

    TS39100

    Abstract: TS39104CS SOP8 PNP Transistor Package 2525l
    Text: TS39100/1/2/3/4/5 1A Ultra Low Dropout Voltage Regulator with Multi-Function SOT-223 TO-252 DPAK Pin Definition: TS39100CWxx 1. Input 2. Ground (tab) 3. Output Pin Definition: TS39100CPxx 1. Input 2. Ground (tab) 3. Output SOP-8 Pin Definition: TS39101CSxx


    Original     		PDF TS39100/1/2/3/4/5 OT-223 O-252 TS39100CWxx TS39100CPxx TS39101CSxx TS39102CS O-252-5L TS39104CS TS39103CP5xx TS39100 TS39104CS SOP8 PNP Transistor Package 2525l

    2SB1132

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES 1 * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) TO-252 *Pb-free plating product number: 2SB1132L


    Original     		PDF 2SB1132 OT-89 2SB1132 -500mA/-50mA) O-252 2SB1132L 2SB1132-x-AB3-R 2SB1132L-x-AB3-R 2SB1132-x-TN3-R 2SB1132L-x-TN3-R

    APM3054N

    Abstract: 0118-B transistor apm3054n equivalent J-STD-020A marking 8A* sot-223 m3054n
    Text: APM3054N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/15A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Package 1


    Original     		PDF APM3054N 0V/15A, O-252 OT-223 O-252 OT-223 OT-89 APM3054N 0118-B transistor apm3054n equivalent J-STD-020A marking 8A* sot-223 m3054n

    APM3055L

    Abstract: 3055L APM3055L voltage APM3055L equivalent APM3055L datasheet J-STD-020A marking 3055l f 3055l A6 sot223
    Text: APM3055L N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =100mΩ(max) @ VGS=10V RDS(ON)=200mΩ(max) @ VGS=4.5V • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Packages


    Original     		PDF APM3055L 0V/12A, O-252 OT-223 O-252 OT-223 3055L APM3055L 3055L APM3055L voltage APM3055L equivalent APM3055L datasheet J-STD-020A marking 3055l f 3055l A6 sot223

    PJ1386

    Abstract: PJB1386 PJB1386CY
    Text: PJB1386 PNP Epitaxial Silicon Transistor T he PJ1386 is an epitaxial planar type PNP silicon transistor SOT-89 TO-252 FATURES z Excellent DC current gain characteristics z Low VCE sat VCE(sat) = -0.35V (Typ) (IC/IB = -4A/-0.1A) Pin: 1.Base ABSOLUTE MAXIMUM RATINGS (Ta = 25℃ )


    Original     		PDF PJB1386 PJ1386 O-252 OT-89 O-252 OT-89 PJB1386CY

    3a npn to126 transistor

    Abstract: 2sd1060l 2SD1060
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR „ 1 SOT-89 FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A 1 TO-126 1 TO-92 1 TO-220 1 1 TO-252 TO-251 *Pb-free plating product number: 2SD1060L


    Original     		PDF 2SD1060 OT-89 O-126 O-220 O-252 O-251 2SD1060L 2SD1060-x-AB3-R 2SD1060L-x-AB3-R 2SD1060-x-T60-K 3a npn to126 transistor 2sd1060l 2SD1060

    3023n

    Abstract: APM3023N A102 J-STD-020A M3023 TO-252-E
    Text: APM3023N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS ON =15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability TO-252.TO-220 and SOT-223 Packages


    Original     		PDF APM3023N 0V/30A, O-252 O-220 OT-223 OT-223 O-252 3023n APM3023N A102 J-STD-020A M3023 TO-252-E

    voltage regulator sot 223

    Abstract: No abstract text available
    Text: TS39100 1A Ultra Low Dropout Voltage Regulator SOT-223 TO-252 DPAK Pin Definition: 1. Input 2. Ground (tab) 3. Output General Description The TS39100 are 1A ultra low dropout linear voltage regulators that provide low voltage, high current output from an extremely small package. This regulator offers extremely low dropout (typically 400mV at 1A) and very low


    Original     		PDF TS39100 OT-223 O-252 TS39100 400mV voltage regulator sot 223

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM


    Original     		PDF LN2302LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner

    LP4101LT1G

    Abstract: P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD
    Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LP4101LT1G 236AB) 3000/Tape LP4101LT3G 000/Tape 195mm 150mm 3000PCS/Reel LP4101LT1G P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD

    LP2301LT1G

    Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
    Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LP2301LT1G 236AB) 3000/Tape LP2301LT3G 000/Tape 195mm 150mm 3000PCS/Reel LP2301LT1G SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD

    ln2312

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2312LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner ln2312

    LN2312LT1G

    Abstract: LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2312LT1G 236AB) 3000/Tape LN2312LT3G 10000/Tape 195mm 150mm 3000PCS/Reel LN2312LT1G LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg

    ahr 49 transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


    Original     		PDF L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr 49 transistor

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor *32V, *0.5A L2SA1036K*LT1G L2SA1036KPLT1G FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. L2SA1036KQLT1G L2SA1036KRLT1G The G.Suffix Denotes a Pb-Free Lead Finish


    Original     		PDF L2SA1036K L2SA1036KPLT1G 500mA L2SA1036KQLT1G L2SA1036KRLT1G L2SA1036KPLT1G L2SA1036KQLT1G OT-23 L2SA1036KRLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A)


    Original     		PDF LRB551V-30T1GG LRB551V-30T1G 3000/Tape LRB551V-30T3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMBV3401LT1G This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE


    Original     		PDF LMBV3401LT1G 20Vdc 100MHzâ 34Ohms 10mAdc 236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High –Speed Switching Diode LMDL914T1G LMDL914T1G Featrues 1 Pb-Free Package is available. ORDERING INFORMATION 2 Device Package Shipping LMDL914T1G SOD-323 3000/Tape&Reel LMDL914T3G SOD-323 10000/Tape&Reel SOD- 323 1 CATHODE MAXIMUM RATINGS


    Original     		PDF LMDL914T1G OD-323 3000/Tape LMDL914T3G 10000/Tape

    T410

    Abstract: T435 Triac T435
    Text: SGS-THOMSON ’0 ^ M iM T41o 0 g S T 4 3 5 HIGH PERFORMANCE TRIACS FEATURES • ITRMS = 4 A ■ V drm = 400 V to 800 V ■ SENSITIVE GATE : lGT s 10 mA ■ HIGH COMMUTATION : (dl/dt c > 3.5 A/ms DESCRIPTION The T410 / T435 high voltage TRIAC Families are high performance planar diffused PNPN de­


    OCR Scan     		PDF ISOWATT220 194/SOT T0220AB T0220AB BTA06-XXX BTB06-XXX T410 T435 Triac T435