2SC2883
Abstract: 2SC2883-O 2SC2883-Y 2SC2883Y marking GY sot89
Text: 2SC2883 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low Voltage. 4 CLASSIFICATION OF hFE 1 2 3 A Product-Rank 2SC2883-O 2SC2883-Y Range
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2SC2883
OT-89
2SC2883-O
2SC2883-Y
500mA
14-Jan-2010
2SC2883
2SC2883-O
2SC2883-Y
2SC2883Y
marking GY sot89
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KTD1624
Abstract: mark A sot-89 MARK Y B Y device marking SOT89 transistor marking transistor marking c
Text: SEMICONDUCTOR KTD1624 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark Y KTD1624 * Grade A A,B,C Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only
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KTD1624
OT-89
KTD1624
mark A sot-89
MARK Y
B Y device marking
SOT89 transistor marking
transistor marking c
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mark A sot-89
Abstract: KTC4372 MARK A SOT89 transistor marking
Text: SEMICONDUCTOR KTC4372 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark A KTC4372 * Grade O O,Y Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only
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KTC4372
OT-89
mark A sot-89
KTC4372
MARK A
SOT89 transistor marking
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Untitled
Abstract: No abstract text available
Text: DP500F PNP Silicon Transistor PIN Connection Description • • • • Suit able for low volt age large current drivers Excellent h FE Linearit y Com plem ent ary pair wit h DN500 Swit ching Applicat ion Ordering Information Type N O. SOT-89 Pa ck a ge Code
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DP500F
DN500
OT-89
KSD-T5B020-000
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sot89 footprint
Abstract: GB11 MSW11GB11-S89T MWS11GB11-G1 MWS11GB11-S1 Advanced RFIC RF transistor SOT-89
Text: MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm 5V . The same RFIC will be available later in an advanced Microsemi
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MWS11-GB11-xx
OT-89
19dBm
OT-89
MWS11GB11-S1
MWS11GB11-G1
MSW11GB11-S89T)
MWS11-GB11
sot89 footprint
GB11
MSW11GB11-S89T
MWS11GB11-G1
MWS11GB11-S1
Advanced RFIC
RF transistor SOT-89
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GB11
Abstract: MSW11GB11-S89T MWS11GB11-G1 MWS11GB11-S1
Text: C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm 5V . The same RFIC will be available later in an advanced Microsemi
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MWS11-GB11-xx
OT-89
19dBm
GB11
MSW11GB11-S89T
MWS11GB11-G1
MWS11GB11-S1
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2SA1020Y
Abstract: 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 2SA661 TEC9015 2SA705 2SA1015L
Text: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 Manufacturer Y(BR)CEO hFE Ie Max A fT (Hz) 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 120 2SA1326 TEDl602C NB122EH NB122FH
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TEC9015B
2SA661
2SB1002
2SB1059
2SB740
BFT71
BFT81
2SA493G
2SA1020Y
2SA1015LY
2SA10150
2SA1015L-Y
2SA10200
2SA12130
TEC9015
2SA705
2SA1015L
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device marking code sot23-5
Abstract: SOT23-5 regulator code 02 LAL sot23-5 LDO Micropower Regulators SOT-89 marking AT sot23-5 sot89 MARKING 3C LAm sot23-5 AYW SOT23 MC78LC33NTRG marking TA sot23-5
Text: MC78LC00 Series Micropower Voltage Regulator 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V Low Output Voltage Option High Accuracy Output Voltage of 2.5% Industrial Temperature Range of −40°C to 85°C
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MC78LC00
OT-89,
OT-23,
OT-89
MC78LC00/D
device marking code sot23-5
SOT23-5 regulator code 02
LAL sot23-5
LDO Micropower Regulators SOT-89
marking AT sot23-5
sot89 MARKING 3C
LAm sot23-5
AYW SOT23
MC78LC33NTRG
marking TA sot23-5
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CL66
Abstract: 2N3565 2n2349 2N702 2N1388 2SC3368 BSX25 2S701 LOW-POWER SILICON NPN 2N1528
Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 2SC3327 04020 2N2349 04021 MMBT3393 MMBT6515 2N1763 2SC563 2SC563 2SC563 Manufacturer 85 90 95 Ie Max A fT (Hz) 20 24 24 24 25 25 25 25 25 25 1.2k 50 120 135 25 25 25
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2SC3327
2N2349
MMBT3393
MMBT6515
2N1763
2SC563
PE108S
2N1528
CL66
2N3565
2N702
2N1388
2SC3368
BSX25
2S701
LOW-POWER SILICON NPN
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LM337 sot23-5
Abstract: NCP584 "network interface cards" NCP585
Text: CHAPTER 1 Selector Guide http://onsemi.com 8 ON Semiconductor Selector Guide − Analog Integrated Circuits Power Management Linear Voltage Regulators General Purpose Linear Voltage Regulators Fixed Output Voltage Positive Vout 80 mA MC78LCxx 200 mA MC33565
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MC78LCxx
MC78LxxA
NCV78LxxA
MC33160
MC34160
MC78Mxx/A
MC78xx/A
NCV78xx
MC78Txx/A
LM323/A
LM337 sot23-5
NCP584
"network interface cards"
NCP585
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MARKING 3D SOT-363
Abstract: Schottky barrier sot-23 Marking 3D 3D SOD-523 LRB715WT1 SC-75 SC-89 3D marking sot23 3D SOT363 DIODE sot-23 Marking 3D DIODE SC59 Marking 3D
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB715WT1 z Features Small surface mounting type SC-89 Low V F and low IR High reliability 3 zConstruction silicon epitaxial planar 2 z Pb-Free Package is Available. 1 SC-89 1 ANODE MAXIMUM RATINGS TA = 25°C
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LRB715WT1
SC-89
LRB715WT1
360mm
MARKING 3D SOT-363
Schottky barrier sot-23 Marking 3D
3D SOD-523
SC-75
SC-89
3D marking sot23
3D SOT363
DIODE sot-23 Marking 3D
DIODE SC59 Marking 3D
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BC558AP
Abstract: TD401 BSX41 ED1802M LOW-POWER SILICON PNP 2N4917 TED1802L TED1802
Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 50 55 60 2SA467G•TM·O 2MA5090 2SA509G·TM·O 2SA509G·O ST8705 2SA608NP 2SA608SP 2N4917 2N5374 BSY59 ED1602D TED1802M ED1802M V741 V741 A5T4062 A8T4062 RN4062 ~~~~8~2 65 70 75 80 2N4062 BC558A
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A5T4058
A8T4058
RN4058
2N3058
2SA509
PET4058
2SA1052
2N4058
BC231A
BC558AP
TD401
BSX41
ED1802M
LOW-POWER SILICON PNP
2N4917
TED1802L
TED1802
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MP5W01A
Abstract: 2N6197 Motorola 2N6080 2N6207 2N6366 40327 1405 Motorola acrian inc 25C31 motorola tip29
Text: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, Solid Stine Advned Semi Semi Inc NEC Corp JA NECElecslnc MitsubiElec MitsubiElec Solid Stlnc ToshibaCorp ToshibaCorp ~~g~:g~ ~atsusnlta I(C) 20 25 30 35 40 45 50 55 60 65 70 75 80 85 - 90 >= Ie Max
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2S0356
2S0415
2S0357
2S0358
S1732
2SC3425
MP5W01A
2N6197
Motorola 2N6080
2N6207
2N6366
40327
1405 Motorola
acrian inc
25C31
motorola tip29
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The LDAP222T1 device is housed in the SC-89 package which is designed
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LDAP222T1
SC-89
LDAP222T1
SC-89
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4617*T1 COLLECTOR 3 3 1 BASE 2 EMITTER 1 2 z Pb-Free Package is Available. SC-89 !Absolute maximum ratings Ta=25°C Symbol Limits Collector-base voltage VCBO 60 V Collector-emitter voltage
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L2SC4617
SC-89
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39 77 in sot-89 package
Abstract: No abstract text available
Text: Tape Dimensions And Orientation: Dimensions in mm 8 mm 12 mm SOT-23 \ p— A i ¡hH 7^7 SOT-89 SMDIP 11 _z 7 U - A l U — âJ U — d U - A L t.-a ] M M 8 . 3 12 -i 16 mm 15.7 3 Î 6. 3 i_ 1. 5 _3-^—. 4 . 1~* 1 . 6 1 1a t .A a J rJ y ! i Hi I" _ 3 _ ._ 9
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OCR Scan
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OT-23
OT-89
OT-143
OT-223
OD-80
OT-23
OT-143
OT-223
39 77 in sot-89 package
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PDF
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S0T89
Abstract: 05T1 ic MARKING FZ D70G LC584 tfr 586
Text: SURFACE-MOUNT D71G.05T1 PHP POWER TRANSISTORS -150 VOLTS -50 mAMP, 500 mWATTS Designed for high voltage switching applications. Features: • High voltage: VCEO = - 150V • High transition frequency: fy = 120MHz C A S E ST Y LE SOT-89 • Pd =1 ~ 2W Mounted on ceramic substrate
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OCR Scan
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120MHz
OT-89
250mm2
S0T89
05T1
ic MARKING FZ
D70G
LC584
tfr 586
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PDF
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BST60
Abstract: BST50
Text: • BST50 BST51 BST52 bbSBTBl 0025b37 T55 H A P X N AMER PHILIPS/DISCRETE b7E D y v N-P-N SILICON PLANAR DARLINGTON TRANSISTORS Silicon n-p-n planar Darlington transistors fo r industrial switching applications, e.g. p rin t hammer, solenoid, relay and lamp driving. Encapsulated in a m icrom iniature SOT-89 envelope.
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OCR Scan
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BST50
BST51
BST52
0025b37
OT-89
BST60,
BST60
BST50
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PDF
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78L05 sot-89
Abstract: sot-89 78L05 78L05 78l05 sot ELM78L05 ELM78L05CG SOT89 78L05 78L05 SOT89 78L05 L SOT-89
Text: ELM78L05CG um m ELM78L05 ¿ nan te ® ffi;,fi{ S ^ 0 K ^ -V ^ '> ^ h y ^ > 100mA f t » tfc , H S ?U ^U -^& © T ^ttW S P nnn*0>& < T ;3*.tT „ B E & ® A ffi* ffi;,1 i :100mA • :5V : SOT-89 • AV3> t ^ j t j —y Ilg A^ffiS bB^ Vin fflHSS * ( ^ - ^ s a )*
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OCR Scan
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ELM78L05CG
ELM78L05
100mA
OT-89
ELM78L05CG-S
ELM78L0
ELM78L05CG
OT-89
ELM78L05CG)
78L05 sot-89
sot-89 78L05
78L05
78l05 sot
ELM78L05
SOT89 78L05
78L05 SOT89
78L05 L
SOT-89
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DIP18
Abstract: DIP20 SSOP030-P-0375
Text: K—II —i ? 3 — K— E NJRC 3 - Kvs. EIAJ 3 - KW (6 •/ ?fl±, ^ y ' r - a a —Kt L-tirB <t ¿K ir1) i 1 \ N JRCn —K B •■/•>—>>3 - Kt lattL t*») *1"*', E EIAJ n — K NJRC <DIP> * DIP008-P-0300 MTP5 SC-74A DIP14 »D IP014-P-0300 SOT-89
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OCR Scan
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DIP008-P-0300
SC-74A
DIP14
DIP014-P-0300
OT-89
SC-62
DIP16
DIP016-P-0300
DIP18
DIP018-P-0300
DIP18
DIP20
SSOP030-P-0375
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PDF
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TO-243AB
Abstract: Schottky Diode SOT-89 E10QS06 E10QS05
Text: SCHOTTKY BARRIER DIODE E10QS05 E10QS06 1.1A/50— 60V FEA TUR ES ° S i m i l a r to T O - 2 4 3 A B SOT-89 Cas e ° Surface Mount Device “ L o w F o r w a r d V o l t a g e Dro p ° L o w P o w e r Loss, High Efficiency « H i g h Su r g e C a p a b i l i t y
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OCR Scan
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E10QS05
E10QS06
O-243AB
OT-89)
E10QS05
E10QS06)
E10QS0S
15X15mm)
bbl5123
TO-243AB
Schottky Diode SOT-89
E10QS06
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PDF
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SDMP30
Abstract: T0-220F
Text: I . «t * # * - S a ü î T - 'J - KÍÍA5'J, S B Ä S f c i t f T C B t M t t f c ' â + „ ✓y -ir - >=n -iä -K ü ¿ V ttffí 0 ír K T I- S L i t „ m n 'i y 'r - i s l t f m , K M - K Suffix T O -9 2 T O -2 2 0 F T O -2 52 SOT-89 MTP-5 DIP SDIP
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OCR Scan
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20Pin
22Pin
T0-220F
O-252
OT-89
24Pin
28Pin
30Pin
40Pin
42Pin
SDMP30
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PDF
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MARKING GA
Abstract: A779 baw78c
Text: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8
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OCR Scan
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62702-A675
62702-A677
62702-A779
62702-A109
MARKING GA
A779
baw78c
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PDF
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1SS SOT-23
Abstract: 1SS TRANSISTOR
Text: TELEFUNKEN ELECTRONIC fllC D a^EDORb 0005275 R • AL6G BF 989 Marked with: M 89 YilLilFlUJNlKIIMl electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input' and Mixerstages especially for UHFTV-tuners up to 900 MHz
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OCR Scan
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569-GS
1SS SOT-23
1SS TRANSISTOR
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PDF
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