Plastic-Encapsulate Transistors
Abstract: MARKING CODE ag sot-89 AGQ transistor MARKING CODE agq AG SOT-89
Text: WILLAS 2SA1797 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR PNP FEATURES Low saturation voltage Excellent DC current gain characteristics SOT-89 1. BASE Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H"
|
Original
|
OT-89
2SA1797
OT-89
061REF
060TYP
118TYP
Plastic-Encapsulate Transistors
MARKING CODE ag sot-89
AGQ transistor
MARKING CODE agq
AG SOT-89
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-89 FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Pb-Free package is available 1. BASE 2. COLLECTOR RoHS product for packing code suffix ”G”
|
Original
|
OT-89
2SD1898
OT-89
061REF
060TYP
118TYP
|
PDF
|
SOT-89 MARKING Z
Abstract: pr marking code sot89 sot-89 marking code pr
Text: WILLAS 2SC2881 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-89 FEATURES z Small Flat Package z High Transition Frequency z High Voltage z Pb-Free package is available 1. BASE 2. COLLECTOR RoHS product for packing code suffix ”G” 3. EMITTER
|
Original
|
OT-89
2SC2881
OT-89
100mA
061REF
060TYP
118TYP
SOT-89 MARKING Z
pr marking code sot89
sot-89 marking code pr
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SA1213 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR PNP SOT-89 FEATURES z z z z Small Flat Package Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time z Pb-Free package is available RoHS product for packing code suffix "G"
|
Original
|
2SA1213
OT-89
OT-89
060TYP
118TYP
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
|
PDF
|
01673
Abstract: No abstract text available
Text: CYStech Electronics Corp. SOT-89 Dimension Marking: A 2 1 3 H C D B E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G *: Typical Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 DIM A B C D
|
Original
|
OT-89
UL94V-0
01673
|
PDF
|
TR13
Abstract: 4868
Text: Package Details SOT-89 Case Mechanical Drawing BOTTOM VIEW Lead Code: Part Marking: Full Part Number Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm R4 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details SOT-89 Case
|
Original
|
OT-89
EIA-481-1-A
Ship11
TR13
4868
|
PDF
|
A 798 transistor
Abstract: SOT89 MARKING CODE B1 MARKING G3 Transistor 2W marking
Text: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings
|
Original
|
KSB798
KSB798
OT-89
KSB798GTF
KSB798YTF
A 798 transistor
SOT89 MARKING CODE B1
MARKING G3 Transistor
2W marking
|
PDF
|
marking code transistor list
Abstract: FJC690 FJC790
Text: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings
|
Original
|
FJC690
FJC790
OT-89
FJC690
marking code transistor list
FJC790
|
PDF
|
Transistor 1308
Abstract: FJC1308 FJC1963
Text: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
|
Original
|
FJC1308
FJC1963
OT-89
FJC1308
Transistor 1308
FJC1963
|
PDF
|
transistor b1 y 016
Abstract: KSB798
Text: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings
|
Original
|
KSB798
OT-89
KSB798
transistor b1 y 016
|
PDF
|
FJC690
Abstract: FJC790
Text: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T
|
Original
|
FJC790
FJC690
OT-89
FJC690
FJC790
|
PDF
|
FJC690
Abstract: FJC790
Text: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings
|
Original
|
FJC690
FJC790
OT-89
FJC690
FJC790
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings
|
Original
|
KSB798
OT-89
KSB798
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
|
Original
|
FJC1308
FJC1963
OT-89
FJC1308
|
PDF
|
|
marking E3 sot89
Abstract: my marking code sot 89 sot89 E3
Text: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings
|
Original
|
FJC690
FJC690
FJC790
OT-89
FJC690TF
marking E3 sot89
my marking code sot 89
sot89 E3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings
|
Original
|
FJC690
FJC790
OT-89
FJC690
|
PDF
|
FJC690
Abstract: FJC790
Text: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings
|
Original
|
FJC790
FJC690
OT-89
FJC790
FJC690
|
PDF
|
FJC1308
Abstract: FJC1963
Text: FJC1963 NPN Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1308 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 9 6 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
|
Original
|
FJC1963
FJC1308
OT-89
FJC1963
FJC1308
|
PDF
|
SOT89 transistor marking 4A
Abstract: FJC1386 FJC2098 SOT89 MARKING CODE B2 camera strobe flash
Text: FJC2098 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC1386 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 2 0 9 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
|
Original
|
FJC2098
FJC1386
OT-89
FJC2098
SOT89 transistor marking 4A
FJC1386
SOT89 MARKING CODE B2
camera strobe flash
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T
|
Original
|
FJC790
FJC690
OT-89
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings
|
Original
|
FJC790
FJC790
FJC690
OT-89
|
PDF
|
SDB4301F
Abstract: ksd80 Schottky Barrier Diode SOT-89 Schottky Diode SOT-89 forward current 1
Text: SDB4301F Semiconductor Schottky Barrier Diode Features • High frequency rectified • Silicon epitaxial type • High reliability Ordering Information Type NO. Marking Package Code 4301 SOT-89 SDB4301F Outline Dimensions unit : mm 4.0 0.50±0.1 2.5 -0.3
|
Original
|
SDB4301F
OT-89
KSD-8001-001
SDB4301F
ksd80
Schottky Barrier Diode SOT-89
Schottky Diode SOT-89 forward current 1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
|
Original
|
FJC1386
FJC2098
OT-89
FJC1386
|
PDF
|
FJC1386
Abstract: FJC2098 SOT89 transistor marking 4A
Text: FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
|
Original
|
FJC1386
FJC2098
OT-89
FJC1386
FJC2098
SOT89 transistor marking 4A
|
PDF
|