Untitled
Abstract: No abstract text available
Text: BAW56T Monolithic Dual Swithcing Diode Common Anode SWITCHING DIODES 200 mAMPERES 70 VOLTS P b Lead Pb -Free Features: * We Declare that the Material of Product Compliance With RoHS Requirements SOT-523F(SC-89) SOT-523F Outline Dimensions (SC-89) Unit:mm A
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BAW56T
OT-523F
SC-89)
SC-89
50BSC
01-Aug-2013
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79a diode
Abstract: marking A1 SOT89 MARKING a1 d sot 89 a2 sot-89 w351 Marking gg SOT89
Text: BAW 79A . BAW 79D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 • Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW 79A GE 1 = A1 2 = C1/2 3 = A2 SOT-89 BAW 79B GF 1 = A1 2 = C1/2
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VPS05162
EHA07003
OT-89
EHB00098
EHB00099
EHB00100
EHB00101
79a diode
marking A1 SOT89
MARKING a1 d sot 89
a2 sot-89
w351
Marking gg SOT89
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476A diode
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low
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LDAN222T1
SC-89
476A diode
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diode T3 Marking
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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LM1MA141WKT1G
LM1MA142WKT1G
SC-70
70/SOTâ
LM1MA141WKT1G
diode T3 Marking
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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LM1MA141WAT1G
LM1MA142WAT1G
SC-70/SOT-323
OT-323/SC-70
3000/Tape
LM1MA141KWA3G
10000/Tape
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2N3906 Darlington transistor
Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11
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M1MA151AT1
M1MA151KT1
M1MA152AT1
M1MA152KT1
M1MA151WAT1
M1MA151WKT1
M1MA152WAT1
M1MA152WKT1
BAS16WT1
M1MA141KT1
2N3906 Darlington transistor
BC337
MPS5172 "cross-reference"
low noise transistors bc638
transistor mpf102
LOW NOISE BC638
SOT-346 431
BC237
BC307
BC212
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BC327 BC337 noise figure
Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
Text: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11
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M1MA151AT1
M1MA151KT1
M1MA152AT1
M1MA152KT1
M1MA151WAT1
M1MA151WKT1
M1MA152WAT1
M1MA152WKT1
BAS16WT1
M1MA141KT1
BC327 BC337 noise figure
BC337
Transistor BC307b
MPS5172 "cross-reference"
BC237
BC307
BC212
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BAT54M3T5G
Abstract: 419C-02 MMVL3700T1
Text: Schottky Diodes Device 1SS383T1 VR Volts CT @ V pF Max 25 40 IR @ V Volts VF Volts Max nA Max Volts 0.6 5000 40 Type Package Dual Independent SC−82AB Case 419C−02 BAT54CXV3T5 30 10 1.0 0.4 2000 25 Dual Common Cathode SC−89 Case 463C−03 RB751S40T1 40
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1SS383T1
SC-82AB
419C-02
BAT54CXV3T5
SC-89
463C-03
RB751S40T1
BAT54XV2T1
RB520S30T1
RB521S30T1
BAT54M3T5G
419C-02
MMVL3700T1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The LDAP222T1 device is housed in the SC-89 package which is designed
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LDAP222T1
SC-89
LDAP222T1
SC-89
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode LBAV70LT1G • Pb−Free Package is Available. 3 MAXIMUM RATINGS TA = 25°C 1 Rating Symbol Max Unit Reverse Voltage Forward Current Peak Forward Surge Current VR IF 70 200 500 Vdc
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LBAV70LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode • Pb−Free Package is Available. LBAW56LT1G 1 CATHODE 3 ANODE 2 CATHODE 3 ORDERING INFORMATION Device PACKAGE Shipping 1 LBAW56LT1G SOT-23 3000 Tape & Reel 2 LBAW56LT3G SOT-23 10000 Tape & Reel
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LBAW56LT1G
LBAW56LT1G
OT-23
LBAW56LT3G
236AB)
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TVS Transient Voltage Suppressors
Abstract: TVS SOD-123 SA5* sot-23 258 sot MMBZ5221ELT1 MM3Z2V4S
Text: Table of Contents Page Page Numeric Data Sheet Listing Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4 Chapter 3: Case Outlines and Package Dimensions Chapter 1: Selector Guide Case Outlines and Package Dimensions . . . . . . . . . . . . 280
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OT-23
SC-74
SMS05T1
TVS Transient Voltage Suppressors
TVS SOD-123
SA5* sot-23
258 sot
MMBZ5221ELT1
MM3Z2V4S
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Untitled
Abstract: No abstract text available
Text: Common Cathode Silicon Dual Switching Diode LDAN222T1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a
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LDAN222T1
416/SCâ
LDAN222T1
-55to150
LDAN222T1â
463C-01
463C-02.
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TE-5001
Abstract: MARKING W16 SOT23 HBM W20 rnx w16 DNA 1002 TVC 2 HB IEEE resistor color code RDA Q20 W16 sot 23 acd marking code
Text: NETWORKS Resistors / capacitors / diodes 3 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC 2 1 STRUCTURE 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 5 4 IDENTIFICATION TYPE COATING COLOR MARKING
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OT-23
D-25578
TE-5001
MARKING W16 SOT23
HBM W20
rnx w16
DNA 1002
TVC 2 HB
IEEE resistor color code
RDA Q20
W16 sot 23
acd marking code
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DECT transmitter siemens
Abstract: BAR63 BAR63-04 DECT siemens SIEMENS MICROWAVE RADIO 8 GHz 6 GHz SMD PIN diode
Text: Knut Brenndörfer ● Jörg Lützner Antenna switches with PIN diodes for digital mobile communications In handhelds for digital mobile and cordless telephone systems, such as GSM and DECT, PIN diodes are starting to replace conventional duplex filters in the transmit/receive switch. For this
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marking 3EM sot-23
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z Pb-Free Package is Available. Ordering Information LMBTH10LT1G Device Marking Shipping LMBTH10LT1G 3EM 3000/Tape&Reel LMBTH10LT3G 3EM 10000/Tape&Reel 3 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage
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LMBTH10LT1G
3000/Tape
LMBTH10LT3G
10000/Tape
marking 3EM sot-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z Pb-Free Package is Available. 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage
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LMBTH10WT1G
SC-70/SOTâ
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QWT1G 1 BASE Featrues 3 z Pb-Free Package is Available. 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage
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LMBTH10QWT1G
SC-70/SOT-323
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full bridge pwm controller sg3526
Abstract: tl494 smps battery charger SOLUTION FOR SMPS USING TL494 MC78LC00H MOSFET HALF BRIDGE SMPS AC TO DC USING TL494 full bridge sg3526 application notes uc3844 smps power supply converter ic tl494 mosfet tl494 PWM dc to dc boost regulator SG3525A application note
Text: Power Supply Circuits In Brief . . . In most electronic systems, some form of voltage regulation is required. In the past, the task of voltage regulator design was tediously accomplished with discrete devices, and the results were quite often complex and costly.
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MOSFET P-channel SOT-23
Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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2N7000
2N7002L
MOSFET60
OT-23
BS107,
BS107A
BS108
BS170
NUD3124
NUD3160
MOSFET P-channel SOT-23
NTD80N02
NTD18N06
NTMS3P03R2
MLD1N06CL
NTHD5904N
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diode marking gg 2a
Abstract: BAW79C 79AB
Text: Silicon Switching Diodes • • • BAW 79 A BAW 79 D For high-speed switching High breakdown voltage Common cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 12 mm-tape Package GE GF
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OCR Scan
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Q62702-A679
Q62702-A680
Q62702-A681
Q62702-A682
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
diode marking gg 2a
BAW79C
79AB
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diode sot-89 marking code
Abstract: sot-89 Marking LB marking QE diode marking gg 2a BH SOT-89 Q62702-A77 marking gg sot-89
Text: • Silicon Switching Diodes SIEMEN S/ SPCL-, ÔS3L.320 OOlbSSÔ fl W Ê Z I P BAW 79 A SEMICONDS 32E D -B AW 79 D r-eS 'U • • • For high-speed switching High breakdown voltage Common cathode Typo Marking Ordering code for versions In bulk Ordering code for
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Q62702-A679
Q62702-A680
Q62702-A681
Q62702-A682
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
pac10
BAW79A
diode sot-89 marking code
sot-89 Marking LB
marking QE
diode marking gg 2a
BH SOT-89
Q62702-A77
marking gg sot-89
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RB110C
Abstract: diode 1436 DAN202KRVA c1251
Text: RO H M CORP 07E D | T f i S ñ ' m O D D E S T % ' 4 | tk Variable Capacitance Diodes EVariable Capacitance Diodes Electrical Characteristics Ta=25°C fi I Î I =25ÙC) Vr m VR Tj Tstg (V) (V) t°C) i°C) 1SV205 35 30 120 —3 0-12 0 1SV207 35 30 120 -3 0 -1 2 0
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1SV205
1SV207
RB110C
RB4000
DAN212K
IN4148
OT-25
DAN404KRVA
DAP404KRVA
diode 1436
DAN202KRVA
c1251
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smd code book
Abstract: smd code book transistors B9-B3741 B352-B6155-X-X-7400 B3-B3342-X-X-7600
Text: Preface At present the conventional through-hole mounting technology used for printed circuit assem blies is increasingly superseded by surface mounting. Instead of inserting leaded components, special miniaturized components are directly attached and soldered to the PC board. These
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OT-23
B3-B3587-X-X-7600
B3-B3789-X-X-7600
B3-B3497-X-X-7600
B3-B3289-X-X-7600
B3-B3342-X-X-7600
B3-B3907-X-X-7400
B3-B3580-X-X-7600
B9-B3695-X-X-7600
B9-B3741
smd code book
smd code book transistors
B352-B6155-X-X-7400
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