bcx55-16 marking
Abstract: BCX55-16 BCX56-16 P025H BCX52-16 BCX53-16
Text: BCX55-16 BCX56-16 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking BCX55-16 X55 BCX56-16 X56 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS SOT-89 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING
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BCX55-16
BCX56-16
OT-89
BCX52-16
BCX53-16
OT-89
bcx55-16 marking
BCX55-16
BCX56-16
P025H
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BCP1898
Abstract: No abstract text available
Text: BCP1898 1A, 100V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The BCP1898 is designed for switching applications. MARKING 4 1 189 8 2 3 A Date Code E
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BCP1898
OT-89
BCP1898
BCP1898-P
BCP1898-Q
BCP1898-R
10-Dec-2010
500mA
500mA,
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P025H
Abstract: 956 relay BCX53-16 BCX56-16 BCX52-16 BCX55-16 T 1K sot-89
Text: BCX52-16 BCX53-16 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking BCX52-16 X52 BCX53-16 X53 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS SOT-89 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING
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BCX52-16
BCX53-16
OT-89
BCX55-16
BCX56-16
OT-89
P025H
956 relay
BCX53-16
BCX52-16
T 1K sot-89
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F MARKING
Abstract: No abstract text available
Text: BCP5401 PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. A B C D E F Marking:5401 XXXX xxxx = Date Code
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BCP5401
OT-89
-120V,
-10mA,
-50mA,
-10mA
-50mA
F MARKING
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5551
Abstract: F MARKING
Text: BCP5551 NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. A B C D E F Marking: 5551 XXXX xxxx = Date Code
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BCP5551
OT-89
100MHz
01-Jun-2002
5551
F MARKING
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onsemi DEVICE BK
Abstract: 10R1 BCX56 BCX56-10R1 sot-89 body marking C 2 L Y
Text: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.
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BCX56-10R1
OT-89
inch/1000
r14525
BCX56
10R1/D
onsemi DEVICE BK
10R1
BCX56-10R1
sot-89 body marking C 2 L Y
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marking BK
Abstract: No abstract text available
Text: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.
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BCX56-10R1
OT-89
inch/1000
100mA
250mA
500mA
marking BK
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Untitled
Abstract: No abstract text available
Text: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.
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BCX56-10R1
OT-89
inch/1000
100mA
250mA
500mA
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC846BDW1T1G
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363/SCâ
LBC846BDW1T1G
LBC847BDW1T1G
LBC847CDW1T1G
LBC848BDW1T1G
LBC848CDW1T1G
OT-363
/SC-88
BC846
BC847
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Untitled
Abstract: No abstract text available
Text: 2 S B 1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1188; BC-*, where ★ is hFE code • • • 2SB1188 (MPT3) c -0.1 *0'2 4.5 1. 6 collector power dissipation, Pc = 2 W,
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OT-89,
SC-62)
2SB1188;
2SB1188
2SD1766
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transistor bc 132
Abstract: B1188 BC transistor series
Text: 2SB1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62)package • package marking: 2SB1188; BC^, where ★ is hFE code 2SB1188 (MPT3) • collector power dissipation, P c = 2 W, when mounted on 40 x 40 x 0.7 mm
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2SB1188
OT-89,
SC-62
2SB1188;
2SD1766
2SB1188
transistor bc 132
B1188
BC transistor series
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Untitled
Abstract: No abstract text available
Text: 3SE D • û23b3EG GGlb71b G ISIP BCX 68 NPN Silicon AF Transistors SIEMENS/ SP C L i SEMICONDS • • • • • T -^ -2 3 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 69 PNP
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23b3EG
GGlb71b
Q62702-C1077
Q62702-C1078
Q62702-C1079
Q62702-C1864
Q62702-C1865
Q62702-C1866
BCX68
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Untitled
Abstract: No abstract text available
Text: NPN Silicon AF Transistors • • • • • BCX68 For general AF applications High collector current High current gain Low collector-em itter saturation voltage Complementary type: BCX 69 PNP Type Marking Ordering code for versions In bulk Ordering code for
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BCX68
Q62702-C1077
Q62702-C1078
Q62702-C1079
Q62702-C1864
Q62702-C1865
Q62702-C1866
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Untitled
Abstract: No abstract text available
Text: 32E D • 053b32G 001b720 2 « S IP PNP Silicon AF Transistors _ S I E M E N S / • • • • • SPCL-, BCX 69 T ' 2 1 - 2 3 _ SEMICONDS For general AF applications High collector current High current gain Low collector-em ltter saturation voltage
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053b32G
001b720
Q62702-C1080
Q62702-C1081
Q62702-C1082
Q62702-C1867
Q62702-C1868
Q62702-C1869
BCX69
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Untitled
Abstract: No abstract text available
Text: BCV29 BCV49 NPN Silicon Darlington Transistors • • • • For general AF applications High collector current High current gain Complementary types: BCV 28, BCV 48 PNP Type Marking Ordering code for versions in bulk Ordering code for versions on 12 mm-tape
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BCV29
BCV49
Q62702-C1684
Q62702-C1686
Q62702-C1853
Q62702-C1832
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Untitled
Abstract: No abstract text available
Text: 32E D • Ô 23 b 3 2 0 QQlbb7Q PNP Silicon Darlington Transistors 2 msip BCV 28 BCV 48 S IE M E N S / SPCL-i SEMICONDS For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code
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Q62702-C1683
Q62702-C1685
Q62702-C1852
Q62702-C1854
6E3b32Q
0Qlbb73
BCV28
BCV48
T-29-29
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1SS SOT-23
Abstract: 1SS TRANSISTOR
Text: TELEFUNKEN ELECTRONIC fllC D a^EDORb 0005275 R • AL6G BF 989 Marked with: M 89 YilLilFlUJNlKIIMl electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input' and Mixerstages especially for UHFTV-tuners up to 900 MHz
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569-GS
1SS SOT-23
1SS TRANSISTOR
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BF 331 TRANSISTORS
Abstract: transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c
Text: TELEFUNKEN ELECTRONIC Ö1C T> • Ö ^ O O R b 0005330 2 ■ ALlSG BFX89 TiHitPüUNliKiM] electronic T -sr-sr Creativo Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General, up to the GHz range Feature»: • Power gain 7 dB Dimensions In mm
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BFX89
569-GS
BF 331 TRANSISTORS
transistor BC 331
transistor Bf 331
transistor BF 606
on TRANSISTOR BC 187
transistor marking p-6
BC 331 Transistor
marking code SJ transistors
bc238c
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TRANSISTOR BI 187
Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
Text: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage
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BUV71
T0126
15A3DIN
TRANSISTOR BI 187
sot-23 npn marking code cr
TRANSISTOR BC 187
BUV71
bc 187 npn transistor
TRANSISTOR BI 237
on BC 187 TRANSISTOR
telefunken ta 750
12A3
T0126
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Untitled
Abstract: No abstract text available
Text: 32E D • Ô23b320 ISIP Q Q lb b 7 4 BCV 29 BCV 49 NPN Silicon Darlington Transistors S IE M E N S / • • • • SPCL-, SEM IC O N BS For genera! A F applications High collector current High current gain Complementary types: B C V 28, B C V 48 PNP Type
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23b320
Q62702-C1684
Q62702-C1686
Q62702-C1853
Q62702-C1832
53b350
G01bb77
BCV29
BCV49
T-29-29
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BC 546 NPN
Abstract: MARKING 7C ICE 47E BCX56-16 BCX54 BCX55 BCX56 BF sot-89 SIEMENS 7L sot-89 Marking code BQ
Text: 4?E D • ñ23SbGS 002M23Ü ñ ■ S I E G T-33-05 NPN Silicon AF Transistors -• • • • BCX 54 BCX 56 SIEMENS AKTIEN6ESEL LSCH AF - For AF driver and output stages High collector current Low collector-em itter saturation voltage
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023SbGS
002ME3Ã
103mA
235b05
0D24533
BCX54
BCX56
T-33-V5
BC 546 NPN
MARKING 7C
ICE 47E
BCX56-16
BCX55
BCX56
BF sot-89
SIEMENS 7L
sot-89 Marking code BQ
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S 566 b
Abstract: No abstract text available
Text: BCX54 BCX56 NPN Silicon AF Transistors • • • • For AF driver and output stages High collector current Low collector-em itter saturation voltage Complementary types: BCX 51 - BCX 53 PNP Type BCX BCX BCX BCX BCX 54-6 54-10 54-16 55-6 55-10 Marking
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BCX54
BCX56
S 566 b
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Untitled
Abstract: No abstract text available
Text: 32E D • Ô 2 3 b 3 2 0 OOlbTOÖ 1 « S I P PNP AF Transistors -f- ^ . ^3 S IE M E N S / SPCL-i SEMICONDS BCX 51 BCX 53 For AF driver and output stages High collector current Low collector-em ltter saturation voltage Complementary types: BCX 5 4 - - B C X 5 6 NPN
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023b32Q
BCX51
BCX53
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marking BCX
Abstract: No abstract text available
Text: BCX 51 BCX53 PNP AF Transistors • • • • For AF driver and o u tp u t stages High c o lle c to r current Lo w co lle c to r-e m itte r saturation voltage C om plem entary types: BCX 54- - BCX 56 NPN Type BCX BCX BCX BCX BCX 5 1 -6 51-10 51-16 5 2 -6
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BCX53
marking BCX
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