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    SOT186 PACKAGE Search Results

    SOT186 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    SOT186 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUT11APX equivalent

    Abstract: BUT11A1 equivalent BU2725DX BU2527 BU506D, BU1506DX, BU2506DF BUT11APX BU4522AX BU2506DF equivalent bu2520dx BU2527DX
    Text: DISCRETE SEMICONDUCTORS Selection guide Power Bipolar Transistors 1998 Dec 16 SOT82 SOT78 TO220AB SOT186 BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF SOT186A (isolated TO220AB) SOT199 SOT399 (TOP3D) SOT429 (TO247) SOT430 (TOP3L) TYPICAL APPLICATIONS


    Original     		O220AB) OT186 BU505 BU505D OT199 OT399 OT429 OT430 BU505F BU505DF BUT11APX equivalent BUT11A1 equivalent BU2725DX BU2527 BU506D, BU1506DX, BU2506DF BUT11APX BU4522AX BU2506DF equivalent bu2520dx BU2527DX PDF

    philips axial 033

    Abstract: power diode package SSOP20 MS-013AC SO20 SOD115
    Text: PACKAGE OUTLINES SOD57 SOD59 SOD61A SOD61H2 SOD61AB to AK SOD61AB2 SOD61AC2 SOD61AD2 SOD64 SOD81 SOD83A SOD87 SOD88A SOD88B SOD100 SOD106 SOD106A SOD107A SOD107B SOD113 SOD115 SOD117 SOD118A SOD118B SOD119AB SOD120 SOT78 SOT163-1 SO20 SOT186 SOT186A SOT223


    Original     		OD61A OD61H2 OD61AB OD61AB2 OD61AC2 OD61AD2 OD83A OD88A OD88B OD100 philips axial 033 power diode package SSOP20 MS-013AC SO20 SOD115 PDF

    PowerMOS Transistors

    Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
    Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)


    Original     		OT54variant O-92variant) O-220AB) OT96-1 OT137-1 OT186 O-220 OT186A O-220) OT223 PowerMOS Transistors 075E05 MS-012AA SO24 SSOP16 SSOP24 PDF

    Power Bipolar Transistors

    Abstract: SOT430 transistors A1 757 sot199 to220 5 lead plastic
    Text: PACKAGE OUTLINES SOT78 TO-220AB SOT82 SOT186(TO-220) SOT186A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) SOT429 (TO-247) SOT430 (TOP3L) Page 754 755 756 757 758 759 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB


    Original     		O-220AB) OT186 O-220) OT186A OT199 OT399 OT429 O-247) OT430 Power Bipolar Transistors SOT430 transistors A1 757 sot199 to220 5 lead plastic PDF

    TO-220F JEDEC

    Abstract: sot186 package TO-220 JEDEC EIAJ TO-220F
    Text: PDF: 1999 Sep 22 Philips Semiconductors Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 'full pack' exposed tabs SOT186 E E1 A P A1 m q D1 D L1 Q b1 L L2 1 2 3 b c w M e e1 5 10 mm scale DIMENSIONS mm are the original dimensions


    Original     		O-220 OT186 O-220F SC-67 TO-220F JEDEC sot186 package TO-220 JEDEC EIAJ TO-220F PDF

    TO-220F JEDEC

    Abstract: sot186 EIAJ SC67
    Text: PDF: 2002 Mar 12 Philips Semiconductors Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 'full pack' exposed tabs SOT186 E E1 A P A1 m q D1 mounting base D L1 Q b1 L L2 1 2 3 b c w M e e1 5 10 mm scale


    Original     		O-220 OT186 O-220F SC-67 TO-220F JEDEC sot186 EIAJ SC67 PDF

    BD149

    Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25


    Original     		MJE800T 2N6296 MJE2481 MJE2483 2N3054A 2SD1092 2SD777 2SB604 2SD570 BD149 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 2SD5260 idb596 PDF

    T0-220AB

    Abstract: SOT-263
    Text: PACKAGE OUTLINES Page SOT186 1126 SOT186A 1127 SOT223 1128 SOT263 1129 SOT263-01 1130 SOT404 1131 SOT426 1132 T0220AB 1133


    OCR Scan     		OT186 OT186A OT223 OT263 OT263-01 OT404 OT426 T0220AB T0-220AB SOT-263 PDF

    18af

    Abstract: BUT10AF but18a BUT18AF BUT18
    Text: Product specification Philips Semiconductors Silicon diffused power transistors BUT18F; BUT18AF PINNING DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN APPLICATIONS


    OCR Scan     		OT186 BUT18F; BUT18AF BUT18F BUT18AF 18af BUT10AF but18a BUT18 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUX84F; BUX85F PINNING DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN APPLICATIONS


    OCR Scan     		OT186 BUX84F; BUX85F BUX84F BUX85F PDF

    bux85f

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUX84F; BUX85F PINNING High-voitage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN base 2 collector


    OCR Scan     		OT186 BUX84F; BUX85F MBB00S OT186) BUX84F BUX85F PDF

    gk67

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency diode. APPLICATIONS • Horizontal deflection circuits of


    OCR Scan     		OT186 BU506DF BU506F; BU506DF forB870 gk67 PDF

    BUT18AF

    Abstract: but18a MBB077 BUT13 BUT18
    Text: Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUT18F; BUT18AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN base 2 collector


    OCR Scan     		OT186 BUT18F; BUT18AF MBB077 BUT18AF. OT186) BUT13F BUT18AF BUT18F but18a MBB077 BUT13 BUT18 PDF

    transistor but12af

    Abstract: but 12af BUT12F BUT12 BUT12AF
    Text: Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUT12F; BUT12AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. PIN base 2 collector 3 emitter mb APPLICATIONS


    OCR Scan     		OT186 BUT12F; BUT12AF OT186) BUT12F BUT12AF transistor but12af but 12af BUT12 PDF

    56359B

    Abstract: No abstract text available
    Text: MOUNTING INSTRUCTIONS Page SOT223 1140 SOT186; SOT263; T0220AB 1152 Philips Semiconductors Mounting instructions SOT223 TAPE and REEL PACKING SOT223 Tape and reel packing meets the feed requirements of automatic pick and place equipment (packing conforms


    OCR Scan     		OT223 OT186; OT263; T0220AB OT223 OT223) 56359B PDF

    IGBTs Transistors

    Abstract: No abstract text available
    Text: PACKAGE OUTLINES Page SOT186 1126 SOT186A 1127 SOT223 1128 SOT263 1129 SOT263-01 1130 SOT404 1131 SOT426 1132 T0220AB 1133 Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Dimensions in mm _ , Package outlines 9 10.2 max 5.7 max N et Mass: 2 g


    OCR Scan     		OT186 OT186A OT223 OT263 OT263-01 OT404 OT426 T0220AB OT186; IGBTs Transistors PDF

    UL-94VO

    Abstract: IGBTs Transistors UL94
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Package outlines Dimensions in mm Net Mass: 2 g top view SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent


    OCR Scan     		OT186; OT186A; OT426 T0220AB; T0220 UL-94VO IGBTs Transistors UL94 PDF

    Power Bipolar Transistors

    Abstract: No abstract text available
    Text: PACKAGE OUTLINES Page SOT78 T0-220AB SOT82 SOT186(10-220) S O U 86A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) 754 755 756 757 758 759 SOT429 (TO-247) SOT43Q (TOP3L) 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-22QAB


    OCR Scan     		T0-220AB) OT186 O-220AB) OT199 OT399 OT429 O-247) OT43Q O-22QAB O-247 Power Bipolar Transistors PDF

    837 mosfet

    Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET


    OCR Scan     		BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L 837 mosfet 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook PDF

    T0-220AB

    Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET


    OCR Scan     		BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L T0-220AB PHILIPS MOSFET igbt mosfet switch BUK866 4001z PDF

    buk638-500b

    Abstract: No abstract text available
    Text: Pow er Devices Power M O SFET Transistors Logic Level FET's in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) RDs ON max (fl) 100 100 100 100 100 100 100 100 100 100 100 100 100 BUK541-100A BUK552-100B BUK542-100B


    OCR Scan     		BUK541-100A BUK552-100B BUK542-100B BUK542-100A BUK552-100A BUK553-100B BUK543-100B BUK553-100A BUK543-100A BUK555-100B buk638-500b PDF

    BUK446-800B

    Abstract: BUK551-100A BUK583 BUK555 600b BUK5
    Text: Pow er Devices Power MOSFET Transistors General Purpose in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) Rd s on max (ft) 500 500 500 600 600 600 600 600 600 BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B


    OCR Scan     		BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B BUK444-600B BUK455-600B BUK445-600B BUK457-600B BUK437-600B BUK454-800B BUK446-800B BUK551-100A BUK583 BUK555 600b BUK5 PDF

    BUK416-100BE

    Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
    Text: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93


    OCR Scan     		BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A BUK451-100B BUK441-100B BUK451-100A BUK441-100A BUK452-100B BUK416-100BE 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE PDF

    PBYR1035B

    Abstract: PBYR1535CT pbyr1525ct R1635 PBYR1525 BY329X
    Text: Philips Semiconductors Concise Catalogue 1996 Power diodes POWER SEMICONDUCTORS FAST RECTIFIER DIODES DAMPER DIODES type number package ' f (AV) v F ‘rr (V) max. (A) (V) (ns) BY229 BV229F BY229X BY329 BY329X BY359 200, 400, 600, 800 200, 400, 600, 800


    OCR Scan     		BY229 BV229F BY229X BY329 BY329X BY359 BY359F BY359X BY459 BY459F PBYR1035B PBYR1535CT pbyr1525ct R1635 PBYR1525 PDF