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    SOT223, 31 Price and Stock

    Guardian Electric Manufacturing Company 28-C-24A

    DC Frame Solenoid - Continuous Duty Cycle - 24VAC
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    Onlinecomponents.com 28-C-24A 31
    • 1 $27.62
    • 10 $24.65
    • 100 $22.89
    • 1000 $21.04
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    Guardian Electric Manufacturing Company A420-065444-00

    AC frame solenoid – 240 VAC - 1600 Ohm – 8 W – 33 mA- Continuous duty cycle - Size: 1.13” (L) x 1.08”(W) x 1.19”(H) - AC & DC applications
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    Onlinecomponents.com A420-065444-00 31
    • 1 $27.62
    • 10 $24.65
    • 100 $22.89
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    Amphenol Aerospace NPH-8-007GH

    Pressure Sensor - 1.02PSI (7kPa) - Vented Gauge - Male 0.19" (4.83mm) Tube Port Size - 0 to 75 mV Output - TO-233AA, TO-8-3 Metal Can.
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    TE Connectivity CN7007-000

    Tinel-Lock Adapters for D-Subminiature Connectors
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    Onlinecomponents.com CN7007-000 31
    • 1 $151.95
    • 10 $136.24
    • 100 $131.99
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    TE Connectivity FCA-210-BY3

    Electromechanical Relay 28VDC 10A DPDT THT Military Relay
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    Onlinecomponents.com FCA-210-BY3 31
    • 1 $189.45
    • 10 $184.8
    • 100 $179.31
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    SOT223, 31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zxtP

    Abstract: Bv 42 transistor ZXTP2008GTA
    Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2008G OT223 OT223 ZXTP2008GTA ZXTP2008GTC 522-ZXTP2008GTA ZXTP2008GTA zxtP Bv 42 transistor

    X5T949

    Abstract: sot223 transistor pinout ZX5T949G
    Text: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T949G OT223 OT223 ZX5T949GTA X5T949 sot223 transistor pinout ZX5T949G

    sot223 transistor pinout

    Abstract: sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP
    Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2008G OT223 OT223 ZXTP2008GTA ZXTP2008GTC sot223 transistor pinout sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP

    ZXTN25020DG

    Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
    Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		PDF ZXTN25020DG OT223 ZXTP25020DG OT223 D-81541 ZXTN25020DG TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25

    Untitled

    Abstract: No abstract text available
    Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		PDF ZXTN25020DG OT223 ZXTP25020DG OT223 D-81541

    Untitled

    Abstract: No abstract text available
    Text: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extrem ely low on state losses m aking it ideal for use in


    Original     		PDF ZX5T949G OT223 OT223 5T949

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2008G OT223 OT223 TP2008GTA

    ZXTP25 20V 6A

    Abstract: ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA
    Text: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		PDF ZXTP25020DG OT223 -65mV ZXTN25020DG OT223 ZXTP25020DGTA D-81541 ZXTP25 20V 6A ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA

    X5T851

    Abstract: bv 42 TRANSISTOR equivalent
    Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T851G OT223 OT223 522-ZX5T851GTA ZX5T851GTA X5T851 bv 42 TRANSISTOR equivalent

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		PDF ZXTP25020DG OT223 -65mV ZXTN25020DG OT223 ZXTP25020DGTA D-81541

    ZXTN2010GTA

    Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010G OT223 OT223 ZXTN2010GTA ZXTN2010G ZXTN2010GTC Bv 42 transistor

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010G OT223 OT223

    ZXTN

    Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010G OT223 OT223 INFORMAT26100 ZXTN ZXTN2010GTA ZXTN2010G ZXTN2010GTC

    ZX5T851G

    Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
    Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T851G OT223 OT223 ZX5T851G ZX5T851GTA ZX5T851GTC Bv 42 transistor

    Q67042-S4165

    Abstract: No abstract text available
    Text: BSP 316 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -100 V 1.8 Ω -0.68 A P-SOT223-4-1 Drain pin 2/4 Gate pin1 Source pin 3 Type Package BSP 316 P P-SOT223-4-1


    Original     		PDF P-SOT223-4-1 Q67042-S4165 BSP316P -200A/ Q67042-S4165

    Untitled

    Abstract: No abstract text available
    Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


    Original     		PDF ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA ZXTP03200BG A1103-04, 522-ZXTP03200BGTA ZXTP03200BGTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		PDF ZXTN19060CG OT223 ZXTP19060CG OT223 D-81541

    TS16949

    Abstract: ZXTN19060CG ZXTN19060CGTA ZXTP19060CG
    Text: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		PDF ZXTN19060CG OT223 ZXTP19060CG OT223 D-81541 TS16949 ZXTN19060CG ZXTN19060CGTA ZXTP19060CG

    TS16949

    Abstract: ZXTP03200BG ZXTP03200BGTA marking sot223 GY
    Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


    Original     		PDF ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA D-81541 A1103-04, TS16949 ZXTP03200BG ZXTP03200BGTA marking sot223 GY

    PNP TRANSISTOR SOT89

    Abstract: sc 107 transistor SC-62 C1 SOT89 PBSS4250X PBSS5540Z PXTA14 audio power amplifiers with transistors PBSS9110Z PBSS5320X
    Text: Semiconductors Date of release: September 2004 Philips’ medium power transistor portfolio in SOT89 SC-62 and SOT223 (SC-73) General features Portfolio overview • Available in the biggest small-signal packages SOT89 (SC-62) and SOT223 (SC-73) • Bridging the gap between DPAK power transistors


    Original     		PDF SC-62) OT223 SC-73) PNP TRANSISTOR SOT89 sc 107 transistor SC-62 C1 SOT89 PBSS4250X PBSS5540Z PXTA14 audio power amplifiers with transistors PBSS9110Z PBSS5320X

    Untitled

    Abstract: No abstract text available
    Text: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general


    OCR Scan     		PDF BDS643/645/647/649/651 -SOT223 OT223, BDS644/646/648/650/652. bbS3T31 0034bt bbS3T31 0034bl0 DQ34bll

    TOP 948

    Abstract: BDS944 BDS946 BDS948 IEC134 MS80 T 948
    Text: Philips Components BDS944/946/948 Datasheet status Product specification date of issue April 1991 PNP Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


    OCR Scan     		PDF BDS944/946/948 OT223) BDS943/945/947. OT223 BDS944 BDS946 BDS948 TOP 948 IEC134 MS80 T 948

    m lc 945

    Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
    Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


    OCR Scan     		PDF BDS943/945/947 OT223) BDS944/946/948. OT223 BDS943 BDS945 BDS947 m lc 945 945 npn 947 smd

    Untitled

    Abstract: No abstract text available
    Text: Philips Com ponents BDS950/952/954/956 Datasheet status Product specification PNP silicon epitaxial base power transistors date of Issue April 1991 PINNING - SOT223 D ESCRIPTIO N PIN PN P silicon epitaxial base transistors in a m iniature S M D envelope SOT223 intended for general


    OCR Scan     		PDF BDS950/952/954/956 OT223 OT223) BDS949/951/953/955. BDS950 BDS952 BDS954 BDS956