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    SOT223 TRANSISTOR FAIRCHILD NPN 3A Search Results

    SOT223 TRANSISTOR FAIRCHILD NPN 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SOT223 TRANSISTOR FAIRCHILD NPN 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN 1A 100V SOT-223

    Abstract: No abstract text available
    Text: NZT902 tm NPN Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted


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    PDF NZT902 NZT902 OT-223 NPN 1A 100V SOT-223

    c 1246

    Abstract: fzt649 CBVK741B019 F63TNR F852 PN2222A On semiconductor date Code sot-223 transistor pn2222a 01246
    Text: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units


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    PDF FZT649 OT-223 c 1246 fzt649 CBVK741B019 F63TNR F852 PN2222A On semiconductor date Code sot-223 transistor pn2222a 01246

    NPN 1A 100V SOT-223

    Abstract: No abstract text available
    Text: NZT902 tm NPN Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted


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    PDF NZT902 NZT902 OT-223 NPN 1A 100V SOT-223

    F63TNR

    Abstract: F852 NZT560 NZT560A PN2222A CBVK741B019
    Text: NZT560/NZT560A July 1998 NZT560 / NZT560A C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF NZT560/NZT560A NZT560 NZT560A OT-223 F63TNR F852 NZT560A PN2222A CBVK741B019

    Untitled

    Abstract: No abstract text available
    Text: NZT902 tm NPN Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted


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    PDF NZT902 OT-223 NZT902

    NZT902

    Abstract: sot223 transistor fairchild NPN 3A
    Text: NZT902 tm NPN Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted


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    PDF NZT902 OT-223 NZT902 sot223 transistor fairchild NPN 3A

    sot223 transistor fairchild NPN 3A

    Abstract: No abstract text available
    Text: NZT560/NZT560A NPN Low Saturation Transistor Features 2 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TA=25°C unless otherwise noted


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    PDF NZT560/NZT560A OT-223 sot223 transistor fairchild NPN 3A

    Untitled

    Abstract: No abstract text available
    Text: NZT560/NZT560A NPN Low Saturation Transistor Features 2 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 1. Base Absolute Maximum Ratings* Symbol 2. Collector 3. Emitter TA=25°C unless otherwise noted


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    PDF NZT560/NZT560A

    NZT560

    Abstract: NZT560A sot223 transistor fairchild NPN 3A
    Text: NZT560/NZT560A NPN Low Saturation Transistor Features 2 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 1. Base Absolute Maximum Ratings* Symbol 2. Collector 3. Emitter TA=25°C unless otherwise noted


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    PDF NZT560/NZT560A NZT560 NZT560A sot223 transistor fairchild NPN 3A

    REVB

    Abstract: FZT649
    Text: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units


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    PDF FZT649 OT-223 100MHz fzt649 REVB

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    fzt649

    Abstract: No abstract text available
    Text: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units


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    PDF FZT649 OT-223 fzt649

    Untitled

    Abstract: No abstract text available
    Text: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units


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    PDF FZT649 OT-223

    Untitled

    Abstract: No abstract text available
    Text: NZT560/NZT560A NPN Low Saturation Transistor Features 2 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25xC unless otherwise noted


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    PDF NZT560/NZT560A OT-223 08MAX

    NZT560

    Abstract: NZT560A
    Text: NZT560/NZT560A NZT560/NZT560A NPN Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25°C unless otherwise noted


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    PDF NZT560/NZT560A OT-223 NZT560 NZT560A

    500MA SOT

    Abstract: NZT560 NZT560A
    Text: NZT560/NZT560A NZT560/NZT560A NPN Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25°C unless otherwise noted


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    PDF NZT560/NZT560A OT-223 500MA SOT NZT560 NZT560A

    PNP TRANSISTOR SOT223

    Abstract: GRM216R71H102K R12 SOT223 murata resistor array C1005X5R0J105K C1608X5R0J106M C3216X5R1E106M GRM188R60J106M dummy load GRM155R71H221K
    Text: 19-4396; Rev 0; 12/08 MAX17075 Evaluation Kit The MAX17075 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that provides the voltages and features required for activematrix thin-film transistor (TFT), liquid-crystal display


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    PDF MAX17075 MAX17075 PNP TRANSISTOR SOT223 GRM216R71H102K R12 SOT223 murata resistor array C1005X5R0J105K C1608X5R0J106M C3216X5R1E106M GRM188R60J106M dummy load GRM155R71H221K

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


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    PDF O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS

    d 42030 transistor

    Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
    Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A


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    PDF BUT11/11A O-220 BUT11 BUT11A BUT11 AN-758: AN-758 d 42030 transistor AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


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    PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300

    2n2222a SOT23

    Abstract: GRM39X7R103K050AD MAX1778 MAX1880 EMK107BJ104MA MAX1778EVKIT MAX1881 MAX1882
    Text: 19-2063; Rev 0; 6/01 MAX1778 Evaluation Kit Features ♦ +2.7V to +5.5V Input Range ♦ Output Voltages +8V, >200mA Step-Up Switching Regulator +20V, >10mA (Positive Charge-Pump Regulator) -5V, >20mA (Negative Charge-Pump Regulator) +2.5V, >200mA (LDO Linear Regulator)


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    PDF MAX1778 200mA 150mA 500kHz MAX1778EVAX1778/MAX1880/MAX1881/MAX1882 2n2222a SOT23 GRM39X7R103K050AD MAX1880 EMK107BJ104MA MAX1778EVKIT MAX1881 MAX1882

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


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    PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    FZT560 fairchild

    Abstract: sot223 transistor fairchild NPN 3A FZT560A FZT560
    Text: S E M IC O N D U C T O R FZT560/FZT560A D iscrete Power & Sig nal Tech nolo gies FAIRCHILD tm J u ly 1 9 9 8 FZT560 / FZT560A SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A


    OCR Scan
    PDF FZT560/FZT560A FZT560 FZT560A OT-223 FZT560/FZT560A FZT560 FZT560A 100MHz FZT560 fairchild sot223 transistor fairchild NPN 3A

    FZT560

    Abstract: FZT560A
    Text: FZT560/FZT560A D is c r e t e P o w e r & S i g n a l T e c h n o lo g ie s F A IR C H IL D S E M IC O N D U C T O R July 1998 FZT560 / FZT560A B C SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A


    OCR Scan
    PDF FZT560 FZT560A OT-223 FZT560/ FZT560A 100MHz