TRANSISTOR BV3
Abstract: No abstract text available
Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624
OT-23
100mA
700mA
700mA,
TRANSISTOR BV3
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TRANSISTOR BV3
Abstract: BV4 transistor BV4 pnp bv-1 transistor bV2
Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624
OT-23
100mA
700mA
700mA,
TRANSISTOR BV3
BV4 transistor
BV4 pnp
bv-1
transistor bV2
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BV4 transistor
Abstract: TRANSISTOR BV3 BV4 pnp MMBTSB624LT1
Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624LT1
OT-23
100mA
700mA
700mA,
PW350
BV4 transistor
TRANSISTOR BV3
BV4 pnp
MMBTSB624LT1
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BV4 transistor
Abstract: transistor BV4
Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624LT1
OT-23
100mA
700mA
700mA,
PW350
BV4 transistor
transistor BV4
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2SB624
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
2SB624
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sot-23 bv4
Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
sot-23 bv4
2SB624
BV4 sot23
TRANSISTOR BV3
marking BV4
SOT23 BV2
2SD596
BV3 marking
BV5 SOT-23
transistor BV4
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Bv4 smd transistor
Abstract: TRANSISTOR SMD BV4 MARKING SMD PNP TRANSISTOR BV5 Bv3 smd transistor smd transistor bv4 MARKING SMD PNP TRANSISTOR BV TRANSISTOR SMD BV CSB624 TRANSISTOR BV3 SMD TRANSISTOR BV5
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB624 PIN CONFIGURATION PNP 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Designed for use in Small type Equipments Especially Recommended or Hybrid Circuit and
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ISO/TS16949
9001Certified
CSB624
OT-23
CSD596
C-120
CSB624Rev
160803E
Bv4 smd transistor
TRANSISTOR SMD BV4
MARKING SMD PNP TRANSISTOR BV5
Bv3 smd transistor
smd transistor bv4
MARKING SMD PNP TRANSISTOR BV
TRANSISTOR SMD BV
CSB624
TRANSISTOR BV3
SMD TRANSISTOR BV5
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Bv4 smd transistor
Abstract: MARKING SMD PNP TRANSISTOR BV5 TRANSISTOR SMD BV4 CSB624 equivalent transistor smd 3 em 7 sot-23 MARKING bv SMD TRANSISTOR BV5
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB624 PIN CONFIGURATION PNP 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Designed for use in Small type Equipments Especially Recommended or Hybrid Circuit and
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ISO/TS16949
CSB624
OT-23
CSD596
C-120
CSB624Rev
160803E
Bv4 smd transistor
MARKING SMD PNP TRANSISTOR BV5
TRANSISTOR SMD BV4
CSB624
equivalent transistor smd 3 em 7
sot-23 MARKING bv
SMD TRANSISTOR BV5
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hFE-200 transistor PNP
Abstract: 2SB624
Text: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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2SB624
OT-23
OT-23
-100mA)
2SD596.
-700mA
-70mA
-10mA
-100A,
hFE-200 transistor PNP
2SB624
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Untitled
Abstract: No abstract text available
Text: 2SB624 PNP Epitaxial Planar Transistors COLLECTOR SOT-23 3 3 P b Lead Pb -Free 1 BASE 1 2 2 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V
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2SB624
OT-23
16-Aug-05
OT-23
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bq 8050
Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Text: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管
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OD-123
OD-123
OD-323
OD-323
OD-523
OD-523
OT-23
OT-23
OT-323
OT-323
bq 8050
HF S4 13003
F6 13003
bL78L05
HF 13003
bq d882
2SC945
KJG BAV99
WG 13003
2SC945 AQ
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BV4 pnp
Abstract: BV4 transistor 2SB624 2SD596
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SB624
OT-23
-100mA)
2SD596.
-100mA
-700mA
-70mA
-10mA
BV4 pnp
BV4 transistor
2SB624
2SD596
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 SOT-23 TRANSISTOR PNP FEATURES 1.BASE 2.EMITTER 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SB624
OT-23
-100mA)
2SD596.
-100mA
-700mA
-70mA
-10mA
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
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2SB624
Abstract: 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
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2SB624
OT-23
The2SB624
-100mA)
2SD596
2SB624
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sot-23 bv2
Abstract: 2SB624 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
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2SB624
OT-23
The2SB624
-100mA)
2SD596
sot-23 bv2
2SB624
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V2101
Abstract: diode mv2105 SOT23 package diodes MV2105* equivalent
Text: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical
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MMBV2101LT1/D
OT-23
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101
V2104
V2101
diode mv2105
SOT23 package diodes
MV2105* equivalent
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MV2107
Abstract: BV2108 MV2113 BV-2108
Text: MOTOROLA SEMICONDUCTOR MMBV2101L thru MMBV2109L MV2101 thru MV2115 TECHNICAL DATA W V O L T A G E -V A R IA B L E C A PA C ITA N C E D IO D ES C 6.8-100 pF 30 VOLTS SILIC O N EPIC A P D IO D ES % C A S E 318-07 TO-236AB SOT-23 MMBV2101L thru MMBV2109L C A SE 182-02
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MMBV2101L
MMBV2109L
MV2101
MV2115
O-236AB
OT-23
MMBV2109L
MV2107
BV2108
MV2113
BV-2108
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Untitled
Abstract: No abstract text available
Text: r 6 3 6 7 2 5 5 M O TO RO LA S C D IO D E S / O P T O Tfi 980 78628 DE|b3b7HS5 P _ T - 0 7-/9 DOTahEâ t T -fH l SOT-23 D IO D E S (continued) Zener Diodes (continued) Pinout: 1-Anode, 2-NC, 3-Cathode VZ i Volts Vz2 Volts V Z3 Volts «1 : iz mA <Z2 1 1
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OT-23
BV2109
BV3102
BV409
MMBV432L
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MV2107
Abstract: mbv2109 MV2113
Text: SILICON EPICAP DIODES . designed in the popular PLASTIC PACKAGE for high volum e require ments of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.
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V21XX
MMBV21XXLT1
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2109LT1*
33AS8)
MMBV2101LT1,
MV2107
mbv2109
MV2113
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V2103
Abstract: V2109
Text: SILICON EPICAP DIODES . . . designed in the popular P LA S TIC PA CK A G E for high volum e require m ents of FM Radio and TV tuning and A FC , general frequency control and tuning applications; providing solid-state reliability in replacem ent of m echanical tuning m ethods.
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MV21XX
MMBV21XXLT1
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2109LT1*
MV2101
MV2103
MV2105
V2103
V2109
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
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E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
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