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    SOT23 JEDEC STANDARD 178 AB Search Results

    SOT23 JEDEC STANDARD 178 AB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    SOT23 JEDEC STANDARD 178 AB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CM1218 Low Capacitance Transient Voltage Suppressors / ESD Protectors Description The CM1218 family of devices features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which may be subjected to electrostatic


    Original     		PDF CM1218 CM1218 CM1218/D

    Untitled

    Abstract: No abstract text available
    Text: CM1218 Low Capacitance Transient Voltage Suppressors / ESD Protectors Description The CM1218 family of devices features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which may be subjected to electrostatic


    Original     		PDF CM1218 MIL-STD-883D OT23-3 419AH CM1218/D

    M24B SOT23

    Abstract: qsc 1110 GTLP16612 GTLP16616 GTLP16617 MQA20 MQA24 soic 16 Jedec package outline
    Text: Revised February 2001 Interface Products Ordering Information and Physical Dimensions Interface Products Ordering Information GTLP/USB Products Ordering Information Note: The GTLP16612, GTLP16616, GTLP16617 do not use the device type numbering scheme, please see datasheets for specific ordering information.


    Original     		PDF GTLP16612, GTLP16616, GTLP16617 MS500144 M24B SOT23 qsc 1110 GTLP16612 GTLP16616 MQA20 MQA24 soic 16 Jedec package outline

    1937 sot23

    Abstract: No abstract text available
    Text: DBV 6 DBV 5 YEQ, YZQ TPS793xx www.ti.com SLVS348K – JULY 2001 – REVISED OCTOBER 2007 ULTRALOW-NOISE, HIGH PSRR, FAST RF 200mA LOW-DROPOUT LINEAR REGULATORS IN NanoStar WAFER CHIP SCALE AND SOT23 FEATURES DESCRIPTION 1 • 200mA RF Low-Dropout Regulator


    Original     		PDF TPS793xx SLVS348K 200mA TPS793xx 1937 sot23

    MPSA65

    Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor

    25c reference top mark sot23

    Abstract: sot23 A63
    Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MPSA63 MMBTA63 PZTA63 MPSA63 MMBTA63 OT-23 OT-223 MPSA64 25c reference top mark sot23 sot23 A63

    DVD player with usb circuit diagram

    Abstract: 320 sot236 CM1223-04SO Marking L2 Packaging SOT23-6 d337 diode marking L2 SOT23 6 zener D335 A0 SOT23-6
    Text: CM1223 Industry First Low Capacitance ESD Protection Arrays with Backdrive Protection Product Description The CM1223 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting


    Original     		PDF CM1223 CM1223/D DVD player with usb circuit diagram 320 sot236 CM1223-04SO Marking L2 Packaging SOT23-6 d337 diode marking L2 SOT23 6 zener D335 A0 SOT23-6

    Untitled

    Abstract: No abstract text available
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MPSA65 MMBTA65 PZTA65 MPSA65 MMBTA65 OT-23 OT-223 MPSA64

    BEL 188 pnp TRANSISTOR characteristics

    Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
    Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA64 PZTA64 OT-23 OT-223 BEL 188 pnp TRANSISTOR characteristics bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N

    transistor bel 100

    Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBTA14 PZTA14 OT-23 OT-223 transistor bel 100 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    JEDEC Matrix Tray outlines

    Abstract: ti packing label dck3 QFP Shipping Trays tray bga 64 EIA-468 label location EIA standards 783 EIA-481-x dbv4 EIA-783
    Text: Application Report SZZA021C − September 2005 Semiconductor Packing Methodology Cles Troxtell, Bobby O’Donley, Ray Purdom, and Edgar Zuniga Standard Linear & Logic ABSTRACT The Texas Instruments Semiconductor Group uses three packing methodologies to prepare


    Original     		PDF SZZA021C JEDEC Matrix Tray outlines ti packing label dck3 QFP Shipping Trays tray bga 64 EIA-468 label location EIA standards 783 EIA-481-x dbv4 EIA-783

    BEL 188 pnp TRANSISTOR characteristics

    Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
    Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA64 PZTA64 OT-23 OT-223 BEL 188 pnp TRANSISTOR characteristics bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor

    712 DIODE marking sot23

    Abstract: 712 SOT23
    Text: NT IA PL M CO S oH *R Features • ■ ■ ■ Applications RoHS compliant* Working peak voltage 7 V or 12 V ESD protection 30 kV max. Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 — Surface Mount TVS Diode


    Original     		PDF RS485 CDSOT23-SM712 OT23W 712 DIODE marking sot23 712 SOT23

    TVS SOT23 712

    Abstract: CDSOT23-SM712 712 sot23
    Text: NT IA PL M CO S oH *R Features • ■ ■ ■ Applications RoHS compliant* Working peak voltage 7 V or 12 V ESD protection 30 kV max. Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 — Surface Mount TVS Diode


    Original     		PDF RS485 CDSOT23-SM712 OT23W TVS SOT23 712 712 sot23

    TVS SOT23 712

    Abstract: 712 DIODE marking sot23 SM712 CDSOT23-SM712 712 sot23
    Text: PL IA NT CO M *R oH S Features • ■ ■ ■ Applications RoHS Compliant* Working peak voltage 7 V or 12 V ESD protection >40 kV Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 – Surface Mount TVS Diode


    Original     		PDF RS485 CDSOT23-SM712 CDSOT23-SM712 TVS SOT23 712 712 DIODE marking sot23 SM712 712 sot23

    2n4416 and application note

    Abstract: TSSOP-8 footprint and soldering sot-23 2N4416 equivalent Siliconix sot23 marking THERMAL SWITCH SC-75A sot-23 Marking N2 699 marking code sot23-5 marking code v6 SOT23 V30114 marking code 20L sot-23 sot23
    Text: 2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 −v6 −30 4.5 5 2N4416A −2.5 to −6 −35 4.5 5 SST4416 −v6 −30 4.5 5 FEATURES BENEFITS D Excellent High-Frequency Gain:


    Original     		PDF 2N4416/2N4416A/SST4416 2N4416 2N4416A SST4416 2N4416/A, 2N4416/2N4416A/SST4416 26-Nov-03 AN826 OT-23 20-Jun-03 2n4416 and application note TSSOP-8 footprint and soldering sot-23 2N4416 equivalent Siliconix sot23 marking THERMAL SWITCH SC-75A sot-23 Marking N2 699 marking code sot23-5 marking code v6 SOT23 V30114 marking code 20L sot-23 sot23

    MPSA06

    Abstract: MPSA06 fairchild transistor PZTA06 SOT-223 LA 3843 CBVK741B019 F63TNR MMBTA06 PN2222N PZTA06 mark 116 sot
    Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA06 PZTA06 OT-23 OT-223 MPSA06 MPSA06 fairchild transistor PZTA06 SOT-223 LA 3843 CBVK741B019 F63TNR MMBTA06 PN2222N PZTA06 mark 116 sot

    bel 188 transistor

    Abstract: CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBTA14 PZTA14 OT-23 OT-223 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    bel 188 transistor

    Abstract: MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF MMBTA92 PZTA92 OT-23 OT-223 bel 188 transistor MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D

    CBVK741B019

    Abstract: F63TNR MMBTA42 MPSA42 PN2222N PZTA42
    Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*


    Original     		PDF MMBTA42 PZTA42 OT-23 OT-223 CBVK741B019 F63TNR MMBTA42 MPSA42 PN2222N PZTA42

    MPSA42

    Abstract: FAIRCHILD SOT-223 MARK CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 mpsa42 "sot23"
    Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*


    Original     		PDF MMBTA42 PZTA42 OT-23 OT-223 MPSA42 FAIRCHILD SOT-223 MARK CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 mpsa42 "sot23"

    Untitled

    Abstract: No abstract text available
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF MMBTA92 PZTA92 OT-23 OT-223

    MPSA42

    Abstract: MPSA42 sot-223 CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 bsrxx
    Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*


    Original     		PDF MMBTA42 PZTA42 OT-23 OT-223 MPSA42 MPSA42 sot-223 CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 bsrxx

    zener D335

    Abstract: Marking L2 Packaging SOT23-6 Marking X1 SOT23-6 X130 SOT23-5 marking L2 SOT23-6 Zener diode sot23-5 sot23-6 marking code 013 Marking L2 Packaging SOT23-5
    Text: CM1223 Industry First Low Capacitance ESD Protection Arrays with Backdrive Protection Product Description The CM1223 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting


    Original     		PDF CM1223 CM1223/D zener D335 Marking L2 Packaging SOT23-6 Marking X1 SOT23-6 X130 SOT23-5 marking L2 SOT23-6 Zener diode sot23-5 sot23-6 marking code 013 Marking L2 Packaging SOT23-5