SOT89 MARKING CODE 3D
Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Text: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK
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OCR Scan
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OT143,
OT223
OT323
PXTA27
BCX51
BCW60A
BCW60B
BCX51-10
BCW60C
BCX51-16
SOT89 MARKING CODE 3D
sot89 mark code AE
sot23 mark code AE
3D sot23
SOT89 marking cec
SOT89 MARKING CODE 43
marking 1p sot23
sot23 p04 marking
marking P1R
SOT89 MARKING 5G
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MMBZ5239B
Abstract: 712 DIODE marking sot23 MMBZ5245B 5252B
Text: SEMICONDUCTOR MMBZ5221B~5252B TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. E B L L FEATURES D ・Small Package : SOT-23. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ Q P D* 300 mW
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MMBZ5221B
5252B
OT-23.
MMBZ5221B
MMBZ5235B
MMBZ5242B
MMBZ5245B
MMBZ5246B
MMBZ5248B
MMBZ5250B
MMBZ5239B
712 DIODE marking sot23
5252B
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5252B
Abstract: MARK 8E diode zener 8w L MMBZ5227B 8B MMBZ5250B Zener diode 81A MARK 8F MMBZ5251B MARKING 8F MMBZ5231B MMBZ5222B
Text: MMBZ5221B~5252B SEMICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES E B L L 3 G H A 2 D ・Small Package : SOT-23. 1 MAXIMUM RATING Ta=25℃ UNIT PD* 300
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MMBZ5221B
5252B
OT-23.
MMBZ5252B
MMBZ5251B
MMBZ5250B
MMBZ5248B
MMBZ5245B
MMBZ5246B
MMBZ5242B
5252B
MARK 8E diode
zener 8w L
MMBZ5227B 8B
MMBZ5250B
Zener diode 81A
MARK 8F
MMBZ5251B
MARKING 8F MMBZ5231B
MMBZ5222B
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OCR Scan
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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XP202A
Abstract: XP202A0003 single diode sot-23 mark pd A9 marking diode sot23 12Represents sot-23 single diode mark PD SOT-23 MOSFET P-CHANNEL a1 1- mark
Text: XP202A0003MR-G ETR1128-003 P-channel 4V G-S MOSFET •FEATURES ■APPLICATIONS ・Low On Resistance ・Ultra High Speed Switching ・4V Driving ・EU RoHS Compliant, Pb Free ● Switching ■PRODUCT NAME * ■ ABSOLUTE MAXIMUM RATINGS PARMETER SYMBOL RATINGS
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XP202A0003MR-G
ETR1128-003
OT-23
000/Reel
XP202A
XP202A0003
single diode sot-23 mark pd
A9 marking diode sot23
12Represents
sot-23 single diode mark PD
SOT-23 MOSFET P-CHANNEL a1 1- mark
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BSS64
Abstract: 01BV CJE SOT-23
Text: BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BSS64
OT-23
BSS64
01BV
CJE SOT-23
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KRA221S
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA221S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ・With Built-in Bias Resistors. E B L L ・Simplify Circuit Design. ・High Output Current :-800mA.
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KRA221S
-800mA.
OT-23
-50mA
-50mA,
-20mA
100MHz
KRA221S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D ・For Complementary With PNP Type BC859/860. H MAXIMUM RATING Ta=25℃ BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage
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BC849/850
BC859/860.
BC849
BC850
100MHz
BC849B
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTN2369S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. E B L L FEATURES ・Excellent Switching Characteristics. D ・Excellent High Frequency Characteristics. 3 H G A 2 1 Q P K J N C P DIM A B C D E G H J
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KTN2369S/AS
15itter
100mA,
Width300
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marking ZI SOT
Abstract: KTN2369AS KTN2369S
Text: SEMICONDUCTOR KTN2369S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES E B L L ・Excellent Switching Characteristics. 3 H G A 2 1 P J N CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage
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KTN2369S/AS
KTN2369AS
100mA,
Width300
marking ZI SOT
KTN2369AS
KTN2369S
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SOT-23
Abstract: No abstract text available
Text: 管理計画 SOT-23 CONTROL PLAN (SOT-23) ﾄﾚｯｸｽ・ｾﾐｺﾝﾀﾞｸﾀｰ株式会社 代表例 TOREX SEMICONDUCTOR LTD. 工程記号 No. 工程名 Flow Process 1 ｳｴﾊ受入 ◇ Wafer incoming 2 酸化 ○ Oxide 3 酸化膜ﾁｪｯｸ
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OT-23)
SOT-23
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BC857
Abstract: No abstract text available
Text: SEMICONDUCTOR BC856/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E B L L FEATURES D ・For Complementary With NPN Type BC846/847/848. H MAXIMUM RATING Ta=25℃ 3 G A 2 1 Q P Collector-Base Voltage
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BC856/7/8
BC846/847/848.
BC857
BC858
BC856
-10mA
-10mA,
100MHz
BC857
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NPN transistor marking NY
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES L 2 H A ・Simplify Circuit Design. 3 G ・With Built-in Bias Resistors. D SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
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KRC231S
KRC235S
OT-23
-50mA,
100MHz
NPN transistor marking NY
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KRC231S
Abstract: KRC232S KRC233S KRC234S KRC235S
Text: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES L 2 H A ・Simplify Circuit Design. 3 G ・With Built-in Bias Resistors. D SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
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KRC231S
KRC235S
OT-23
KRC232S
KRC233S
KRC234S
KRC235S
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KDR411S
Abstract: MARKING U3
Text: SEMICONDUCTOR KDR411S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking U3 No. 1 Item Marking Device Mark U3 KDR411S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KDR411S
OT-23
Rem1998.
KDR411S
MARKING U3
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BC817
Abstract: No abstract text available
Text: SEMICONDUCTOR BC817 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L FEATURES D ・Complementary to BC807. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ Q UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage
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BC817
BC807.
BC817
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BC807A-40
Abstract: 1P TRANSISTOR MARK BC807A BC817A
Text: SEMICONDUCTOR BC807A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L 3 H G A 2 D ・Complementary to BC817A. 1 MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage
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BC807A
BC817A.
BC807A-40
1P TRANSISTOR MARK
BC807A
BC817A
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BC817A
Abstract: No abstract text available
Text: SEMICONDUCTOR BC817A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L FEATURES L D ・Complementary to BC807A. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage
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BC817A
BC807A.
BC817A
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BC807A
Abstract: No abstract text available
Text: SEMICONDUCTOR BC807A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L FEATURES L D ・Complementary to BC817A. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage
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BC807A
BC817A.
BC807A
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sot 23 zwa
Abstract: SOT23 MARKING ZWA KN4403S zwa sot23 KN4402S zva 003 MARK CB SOT23 zwa Marking ZWA SOT-23 TRANSISTOR zwa
Text: SEMICONDUCTOR KN4402S/4403S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D ・Complementary to the KN4400S/4401S 3 H G A 2 1 Q P UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage
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KN4400S/4401S
KN4402S/4403S
Width300
140kHz
sot 23 zwa
SOT23 MARKING ZWA
KN4403S
zwa sot23
KN4402S
zva 003
MARK CB SOT23 zwa
Marking ZWA SOT-23
TRANSISTOR zwa
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SOT23 MARK u3
Abstract: BF242
Text: BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BSS64
OT-23
SOT23 MARK u3
BF242
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maxim CODE TOP MARKING
Abstract: MAX6326R31-T
Text: MAX6326/MAX6327/ MAX6328/MAX6346/ MAX6347/MAX6348 3-Pin, Ultra-Low-Power SC70/SOT P Reset Circuits General Description The MAX6326/MAX6327/MAX6328/MAX6346/MAX6347/ MAX6348 microprocessor µP supervisory circuits monitor the power supplies in µP and digital systems. These
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MAX6326/MAX6327/
MAX6328/MAX6346/
MAX6347/MAX6348
SC70/SOT
MAX6326/MAX6327/MAX6328/MAX6346/MAX6347/
MAX6348
100ms
maxim CODE TOP MARKING
MAX6326R31-T
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA109S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E B L L FEATURES ・Simplify Circuit Design. D ・With Built-in Bias Resistors. 2 H A 3 G ・Reduce a Quantity of Parts and Manufacturing Process.
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KRA109S
KRA107S
KRA108S
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KRC281S
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)
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KRC281S
KRC286S
KRC281S
KRC282S
KRC284S
KRC285S
KRC283S
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