Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT23 MARKING 46 Search Results

    SOT23 MARKING 46 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    SOT23 MARKING 46 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 702 sot23

    Abstract: 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23
    Text: New Marking Codes SOT23 New Marking Codes SOT23 SOT23 Types from Hamburg, Hazel Grove and Nijmegen without a vendor code will be changed in their marking to a two digit product code and a one digit vendor code. The vendor code indicates the location of the assembly,


    Original     		PDF BSR18A marking 702 sot23 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23

    Untitled

    Abstract: No abstract text available
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23


    Original     		PDF BCV26, BCV46 BCV27, BCV47 VPS05161 BCV26 BCV46

    BCV26

    Abstract: BCV27 BCV46 BCV47
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23


    Original     		PDF BCV26, BCV46 BCV27, BCV47 BCV26 VPS05161 EHP00295 BCV26 BCV27 BCV46 BCV47

    Untitled

    Abstract: No abstract text available
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23


    Original     		PDF BCV26, BCV46 BCV27, BCV47 VPS05161 BCV26 BCV46

    BC858C

    Abstract: 65 marking sot23
    Text: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP Transistors. Pin Configuration: 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Dimensions : Millimetres Absolute Maximum Ratings - Symbol Collector-Emitter Voltage +VBE = 1V


    Original     		PDF BC858C BC858C 65 marking sot23

    BC858C

    Abstract: 2KW sot23
    Text: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP transistors. Package Outline Details Pin Configuration 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Absolute Maximum Ratings - Symbol Collector–emitter voltage +VBE = 1V


    Original     		PDF BC858C BC858C 2KW sot23

    BAV170

    Abstract: No abstract text available
    Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 ! , ,   Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


    Original     		PDF BAV170. BAV170 BAV170

    BAV170

    Abstract: BCW66
    Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAV170 ! , ,   Type Package Configuration Marking BAV170 SOT23 common cathode


    Original     		PDF BAV170. BAV170 BAV170 BCW66

    BAV170

    Abstract: No abstract text available
    Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


    Original     		PDF BAV170. BAV170 poweV170 EHB00081 Mar-10-2004 BAV170

    Untitled

    Abstract: No abstract text available
    Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


    Original     		PDF BAV170. BAV170

    bav170

    Abstract: MarKING Jxs sot23
    Text: BAV170. Silicon Low Leakage Diode Array  Low-leakage applications  Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


    Original     		PDF BAV170. BAV170 EHB00081 EHB00082 Jul-09-2003 bav170 MarKING Jxs sot23

    BAV170

    Abstract: No abstract text available
    Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


    Original     		PDF BAV170. BAV170 BAV170

    BAV170

    Abstract: No abstract text available
    Text: BAV170 3 Silicon Low Leakage Diode Array  Low-leakage applications  Medium speed switching times 2  Common cathode 1 VPS05161 3 1 2 EHA07004 Type BAV170 Marking JXs Pin Configuration 1 = A1 2 = A2 3 = C1/2 Package SOT23 Maximum Ratings Parameter Symbol


    Original     		PDF BAV170 VPS05161 EHA07004 EHB00081 Aug-20-2001 EHB00082 BAV170

    BAW156

    Abstract: No abstract text available
    Text: BAW156. Silicon Low Leakage Diode  Low-leakage applications  Medium speed switching times  Common anode configuration BAW156 3 D 1 D 2 1 2 Type BAW156 Package SOT23 Configuration common anode Marking JZs Maximum Ratings at TA = 25°C, unless otherwise specified


    Original     		PDF BAW156. BAW156 EHB00107 EHB00108 Apr-30-2003 BAW156

    BAV70

    Abstract: No abstract text available
    Text: BAV70 Silicon Switching Diode Array 3  For high-speed switching applications  Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF BAV70 VPS05161 EHA07004 EHB00066 EHB00067 Jul-31-2001 EHB00068 BAV70

    BCV26

    Abstract: BCV27 BCV46 BCV47
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV27, BCV47 NPN Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs


    Original     		PDF BCV26, BCV46 BCV27, BCV47 BCV26 BCV26 BCV27 BCV46 BCV47

    Untitled

    Abstract: No abstract text available
    Text: 300mW DUAL ZENER DIODES DUAL ZENER DZ23 SERIES 300mW COMMON CATHODE SOT23 Package Voltage Max. Zener Typ. Temp Max. Reverse TA = 25˚C Range Impedance Coefficient Leakage Current Marking VZ @ IZT ZZT @ IZT ZZK @ IZK @ IZ = 5mA -IR @ VR SQP Type Code V min V max


    Original     		PDF 300mW DZ23-C2V7 DZ23-C3 DZ23-C3V3 DZ23-C3V6 DZ23-C3V9 DZ23-C4V3 DZ23-C4V7 DZ23-C5V1

    BAW156

    Abstract: No abstract text available
    Text: BAW156 3 Silicon Low Leakage Diode Array  Low-leakage applications  Medium speed switching times 2  Common anode 1 VPS05161 3 1 2 EHA07006 Type BAW156 Marking JZs Pin Configuration 1 = C1 2 = C2 3 = A1/2 Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF BAW156 VPS05161 EHA07006 EHB00107 Aug-20-2001 EHB00108 BAW156

    marking W26 sot23

    Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
    Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters


    Original     		PDF OT23-3 OT-23) OT23-5 OT-25) TK73249M OT23L-8 TK73250M TK73255M marking W26 sot23 SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89

    MARKING 43 SOT23 6 pin

    Abstract: PACDN044Y5R sc70 package dimensions D44 SOT23 D44 SOT23 6pin micro USB B 5pin
    Text: PACDN042/43/44/45/46 Transient Voltage Suppressors / ESD Protectors Features Product Description • The PACDN042/43/44/45/46 family of transient voltage suppressor arrays provide a very high level of protection for sensitive electronic components which may be


    Original     		PDF PACDN042/43/44/45/46 MARKING 43 SOT23 6 pin PACDN044Y5R sc70 package dimensions D44 SOT23 D44 SOT23 6pin micro USB B 5pin

    micro USB 5Pin B SMT

    Abstract: D44 SOT23 6pin marking E1 D054 PACDN044 d056 MSOP PACDN043 PACDN045 PACDN046 D44 SOT23
    Text: PACDN042/43/44/45/46 Transient Voltage Suppressors / ESD Protectors Features Product Description • The family of devices consists of the PACDN042, PACDN043, PACDN044, PACDN045, and PACDN046. These devices are transient voltage suppressor arrays that provide a very high level of protection for sensitive


    Original     		PDF PACDN042/43/44/45/46 PACDN042, PACDN043, PACDN044, PACDN045, PACDN046. PACDN042/43/44/ micro USB 5Pin B SMT D44 SOT23 6pin marking E1 D054 PACDN044 d056 MSOP PACDN043 PACDN045 PACDN046 D44 SOT23

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43h BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25 Parameter Symbol Peak Repetitive Peak reverse voltage


    Original     		PDF OT-23 BAS40/-04/-05/-06 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43h BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25


    Original     		PDF OT-23 BAS40/-04/-05/-06 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43 • BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46


    Original     		PDF OT-23 BAS40/-04/-05/-06 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06