transistor smd marking NE
Abstract: transistor smd marking BA RE SOT23 NE CMBT847 transistor smd marking PE
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT847
100uA,
C-120
transistor smd marking NE
transistor smd marking BA RE
SOT23 NE
CMBT847
transistor smd marking PE
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transistor smd marking PE
Abstract: transistor smd marking BA transistor smd marking BA sot-23 CMBT857 pe sot23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT857
100uA,
C-120
transistor smd marking PE
transistor smd marking BA
transistor smd marking BA sot-23
CMBT857
pe sot23
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smd transistor marking PA
Abstract: "marking PA" CMBA857
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBA857
100uA,
C-120
smd transistor marking PA
"marking PA"
CMBA857
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CMBA847
Abstract: transistor smd marking BA sot-23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBA847
100uA,
C-120
CMBA847
transistor smd marking BA sot-23
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Mosfet
Abstract: SSF2418E 2418E
Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF2418E
18mohm
OT23-6
2418E
Mosfet
SSF2418E
2418E
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Untitled
Abstract: No abstract text available
Text: 300mW DUAL ZENER DIODES DUAL ZENER DZ23 SERIES 300mW COMMON CATHODE SOT23 Package Voltage Max. Zener Typ. Temp Max. Reverse TA = 25˚C Range Impedance Coefficient Leakage Current Marking VZ @ IZT ZZT @ IZT ZZK @ IZK @ IZ = 5mA -IR @ VR SQP Type Code V min V max
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300mW
DZ23-C2V7
DZ23-C3
DZ23-C3V3
DZ23-C3V6
DZ23-C3V9
DZ23-C4V3
DZ23-C4V7
DZ23-C5V1
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Untitled
Abstract: No abstract text available
Text: BF799 NPN Silicon RF Transistor 3 For linear broadband amplifier application up to 500 MHz SAW filter driver in TV tuners 2 1 Type Marking BF799 LKs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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BF799
VPS05161
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Untitled
Abstract: No abstract text available
Text: BF799 NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz 2 3 • SAW filter driver in TV tuners 1 • Pb-free RoHS compliant package Type Marking BF799 LKs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter
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BF799
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SAW MARKING CODE SOT23
Abstract: BF799
Text: BF799 NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz 2 3 • SAW filter driver in TV tuners 1 • Pb-free RoHS compliant package Type Marking BF799 LKs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter
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BF799
BF799
SAW MARKING CODE SOT23
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SAW MARKING CODE SOT23
Abstract: No abstract text available
Text: BF799 NPN Silicon RF Transistor 3 For linear broadband amplifier application up to 500 MHz SAW filter driver in TV tuners 2 1 Type Marking BF799 LKs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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BF799
VPS05161
SAW MARKING CODE SOT23
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BF799
Abstract: No abstract text available
Text: BF799 NPN Silicon RF Transistor 3 For linear broadband amplifier application up to 500 MHz SAW filter driver in TV tuners 2 1 Type Marking BF799 LKs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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BF799
VPS05161
Apr-15-2003
100MHz
EHT07116
EHT07117
BF799
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g23 sot23
Abstract: sot23 G17 MMBZ4625
Text: 350mW ZENER DIODES MMBZ46 SERIES • New Product SOT23 Pkg. TA = 25˚C • • • • • • • • • • • Nom. Test Voltage Current VZ@IZT IZT Type Marking V µA MMBZ4617 G17 2.4 250 MMBZ4618 G18 2.7 250 MMBZ4619 G19 3.0 250 MMBZ4620 G20 3.3 250 MMBZ4621
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350mW
MMBZ46
MMBZ4617
MMBZ4618
MMBZ4619
MMBZ4620
MMBZ4621
MMBZ4622
MMBZ4623
MMBZ4624
g23 sot23
sot23 G17
MMBZ4625
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M2 MARKING SOT23
Abstract: SOT23 E5 MMBZ5262A MARKING J3 SOT-23 marking J3 sot23 MMBZ5250A sot-23 Marking J3 MMBZ5234A MMBZ5235A MMBZ5236A
Text: MMBZ5229A SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.3 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives
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MMBZ5229A
410mW
2002/95/EC
OT-23,
MIL-STD-750,
013mm
M2 MARKING SOT23
SOT23 E5
MMBZ5262A
MARKING J3 SOT-23
marking J3 sot23
MMBZ5250A
sot-23 Marking J3
MMBZ5234A
MMBZ5235A
MMBZ5236A
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Untitled
Abstract: No abstract text available
Text: MMBZ5221B SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives
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MMBZ5221B
410mW
2002/95/EC
OT-23,
MIL-STD-750,
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MARKING JS
Abstract: DIODE JS4 BAS21SLT1 BAS21CLT1 sot23 js marking DIODE JS DIODE JS 4 BAS21ALT1 BAS21LT1 Diode SOT-23 marking Js
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT-23 SWITCHING DIODE FEATURES 1. 0 Power dissipation mW Tamb=25℃ 0. 95 0. 4 2. 9 Forward Current 200 m A IF: Reverse Voltage 250 V VR: Operating and storage junction temperature range
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OT-23
BAS21/A/C/SLT1
OT-23
BAS21LT1
BAS21ALT1
BAS21CLT1
BAS21SLT1
MARKING JS
DIODE JS4
BAS21SLT1
BAS21CLT1
sot23 js marking
DIODE JS
DIODE JS 4
BAS21ALT1
BAS21LT1
Diode SOT-23 marking Js
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diode marking 74
Abstract: MARKING 73 DIODE 73 marking cd BAS70 BAS70-04 BAS70-05 BAS70-06 marking pd marking 76
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BAS70/-04/-05/06 SCHOTTKY DIODE SOT-23 FEATURES mW Tamb=25℃ 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 200 mA IF: Collector-base voltage 70 V VR: Operating and storage junction temperature range
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OT-23
BAS70/-04/-05/06
OT-23
BAS70
BAS70-04
BAS70-05
BAS70-06
diode marking 74
MARKING 73
DIODE 73
marking cd
marking pd
marking 76
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate DIODE BAS70/-04/-05/06 SCHOTTKY DIODE SOT-23 FEATURES mW Tamb=25℃ 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 200 mA IF: Collector-base voltage 70 V VR: Operating and storage junction temperature range 0. 95 200 1. 9 PD: 1. 0
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OT-23
BAS70/-04/-05/06
OT-23
BAS70
BAS70-04
BAS70-05
10mor-base
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BFR93AW-GS08
Abstract: 732 774 047 B 1359 BFR93A application board BFR93AW S parameters of BFR93AR GHz transistor BFR93A BFR93AR 682 SOT23 MARKING 85035
Text: BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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BFR93A/BFR93AR/BFR93AW
2002/95/EC
2002/96/EC
OT323
BFR93A
BFR93AR
BFR93ed
08-Apr-05
BFR93AW-GS08
732 774 047
B 1359
BFR93A application board
BFR93AW
S parameters of BFR93AR GHz transistor
BFR93A
BFR93AR
682 SOT23 MARKING
85035
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marking 43
Abstract: diode marking 44 sot23 marking pd marking cd BAS40 BAS40-04 BAS40-05 BAS40-06 SOT23 MARKING 46 marking 46
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40 SERIES SOT-23 SCHOTTKY DIODE 1. 0 FEATURES Power dissipation 0. 95 0. 4 2. 9 Forward Current 200 m A IF: Reverse Voltage 40 V VR: Operating and storage junction temperature range
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OT-23
BAS40
OT-23
BAS40-04
BAS40-05
BAS40-06
marking 43
diode marking 44 sot23
marking pd
marking cd
SOT23 MARKING 46
marking 46
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marking d4
Abstract: marking d6 MARKING 5H MARKING D6 diode 5H MARKING "MARKING 5H" marking d4 sot23 sot-23 Marking i 5H 5 MMBD4148A MMBD4148CC
Text: Transys Electronics L I M I T E D SOT-23 Plastic-Encapsulated Diodes MMBD4148A/SE/CC/CA SWITCHING DIODE SOT-23 FEATURES 1. 0 Power dissipation mW Tamb=25℃ 0. 95 0. 4 2. 9 Forward Current 200 m A IF: Reverse Voltage 100 V ( IR=100µA ) VR: Operating and storage junction temperature range
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OT-23
MMBD4148A/SE/CC/CA
OT-23
MMBD4148A
MMBD4148CA
MMBD4148CC
MMBD4148SE
marking d4
marking d6
MARKING 5H
MARKING D6 diode
5H MARKING
"MARKING 5H"
marking d4 sot23
sot-23 Marking i 5H 5
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DA5 diode
Abstract: marking db2 sot23 marking db2 DA5 marking transistor D95 diode Da5 DA5 SOT23 marking 3a marking SOT23 V 4 diode da5 sot 23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SCHOTTKY DIODE SOT-23 FEATURES mW Tamb=25℃ 0. 95 0. 4 2. 9 0. 95 2. 4 1. 3 Forward Current 100 mA IF: Reverse Voltage 30 V VR: Operating and storage junction temperature range
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OT-23
OT-23
100mA
DA5 diode
marking db2 sot23
marking db2
DA5 marking
transistor D95
diode Da5
DA5 SOT23
marking 3a
marking SOT23 V 4 diode
da5 sot 23
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marking d6
Abstract: 5H MARKING marking d4 IR diode D4 marking 5h IR D4 marking cd MMBD4148A MMBD4148CA MMBD4148CC
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148A/SE/CC/CA SWITCHING DIODE SOT-23 FEATURES 1. 0 Power dissipation mW Tamb=25℃ 0. 95 0. 4 2. 9 Forward Current 200 m A IF: Reverse Voltage 100 V ( IR=100µA ) VR:
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OT-23
MMBD4148A/SE/CC/CA
OT-23
MMBD4148A
MMBD4148CA
MMBD4148CC
MMBD4148SE
marking d6
5H MARKING
marking d4
IR diode D4
marking 5h
IR D4
marking cd
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zener y11
Abstract: zener 472
Text: Surface Mount Zener Diodes 350m W Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* N Vz @ Izj Typical Temperature Coefficient Maximum Reverse Leakage Current €» VR Vz Volts O hm s mA O hm s mA To %/°C mA Volts N
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OCR Scan
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PDF
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Diodes/SOT23
zener y11
zener 472
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Untitled
Abstract: No abstract text available
Text: Surface M ount Dual Zener Diodes 350mW Dual Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* VZ @ Izr ZZT @ !zt Typical Temperature Coefficient TC ZZK @ >ZK Volts O hm s mA O hm s mA VI V2 V3 2.5-2.9 2.8-3.2 3.1-3.5
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OCR Scan
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PDF
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350mW
Diodes/SOT23
DZ23-C2V7
DZ23-C3
DZ23-C3V3
DZ23-C3V6
DZ23-C3V9
DZ23-C4V3
DZ23-C4V7
DZ23-C5V1
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