SRs SOT23
Abstract: BSS131 E6327 Q62702-S565 Q67000-S229 d01a
Text: Type BSS131 SIPMOS Small-Signal-Transistor Product Summary Feature • N-Channel • Enhancement mode V DS 240 V R DS on ,max 14 Ω ID 0.1 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS131 SOT23
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BSS131
OT-23
Q62702-S565
E6327
Q67000-S229
E6433
SRs SOT23
BSS131
E6327
Q62702-S565
Q67000-S229
d01a
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SOT23-5 marking 016
Abstract: A114 A115 MC74VHC1GT02
Text: MC74VHC1GT02 Single 2−Input NOR Gate/ CMOS Logic Level Shifter LSTTL−Compatible Inputs MARKING DIAGRAMS 5 5 1 SC−88A/SC70−5/SOT−353 DF SUFFIX CASE 419A VJ M G G 1 5 5 VJ M G G 1 TSOP−5/SOT23−5/SC59−5 DT SUFFIX CASE 483 1 VJ = Device Code M
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MC74VHC1GT02
SC-88A/SC70-5/SOT-353
TSOP-5/SOT23-5/SC59-5
MC74VHC1GT02
MC74VHC1GT02/D
SOT23-5 marking 016
A114
A115
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Untitled
Abstract: No abstract text available
Text: MC74VHC1GT02 Single 2−Input NOR Gate/ CMOS Logic Level Shifter LSTTL−Compatible Inputs MARKING DIAGRAMS 5 5 1 SC−88A/SC70−5/SOT−353 DF SUFFIX CASE 419A VJ M G G 1 5 5 VJ M G G 1 TSOP−5/SOT23−5/SC59−5 DT SUFFIX CASE 483 1 VJ = Device Code M
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MC74VHC1GT02
8A/SC70â
5/SOT23â
5/SC59â
MC74VHC1GT02
MC74VHC1GT02/D
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AME8818DEEVADJZ
Abstract: AME8818AEEV330Z AME8818BEEV180Z AME8818 AME8818DEEV AME8818AEEV250Z AME8818AEET150Z AME8818BEEV250Z 4byp 250 AME8818BEEV
Text: AME Low Dropout 300mA CMOS Regulator AME8818 n General Description n Functional Block Diagram The AME8818 is a CMOS linear regulator. It operated from 2.5V to 5.5V input voltage and delivers up to 300mA output current. The AME8818 provide low quiescent current 70µA
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300mA
AME8818
AME8818
230mV
95BSC
0374BSC
AME8818DEEVADJZ
AME8818AEEV330Z
AME8818BEEV180Z
AME8818DEEV
AME8818AEEV250Z
AME8818AEET150Z
AME8818BEEV250Z
4byp 250
AME8818BEEV
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Linear Regulator
Abstract: AME8818 AME8818DEEVADJZ
Text: AME Low Dropout 300mA CMOS Regulator AME8818 n General Description The AME8818 is a CMOS linear regulator. It operated from 2.5V to 5.5V input voltage and delivers up to 300mA output current. The AME8818 provide low quiescent current 70µA typ low dropout voltage (230mV @ 300mA typ), and excellent PSRR, thus marking them ideal for Data-Communications and battery applications.
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300mA
AME8818
AME8818
230mV
1261-DS8818-D
Linear Regulator
AME8818DEEVADJZ
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unisonic date code
Abstract: 1F marking sot-89 MARKING CODE 4A Marking code 33 29 SOT89 ldo 5v SOT25
Text: UNISONIC TECHNOLOGIES CO., LTD LR1101 CMOS IC 100mA, 4µA QUIESCENT CURRENT CMOS LDO REGULATOR DESCRIPTION The UTC LR1101 series are ultra-low quiescent current CMOS LDO Low Dropout Voltage . Designed for battery-powered system, the low 4 A quiescent current makes it an ideal choice. The Range
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LR1101
100mA,
LR1101
100mA.
450mV
100mA
QW-R102-034
unisonic date code
1F marking
sot-89 MARKING CODE 4A
Marking code 33 29 SOT89
ldo 5v SOT25
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LR1101
Abstract: LDO MARKING LR1101G sot-89 MARKING CODE 4A Marking 1F SOT25 unisonic date code
Text: UNISONIC TECHNOLOGIES CO., LTD LR1101 CMOS IC 100mA, 4µA QUIESCENT CURRENT CMOS LDO REGULATOR DESCRIPTION The UTC LR1101 series are ultra-low quiescent current CMOS LDO Low Dropout Voltage . Designed for battery-powered system, the low 4 A quiescent current makes it an ideal choice. The Range
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LR1101
100mA,
LR1101
100mA.
450mV
100mA
QW-R102-034
LDO MARKING
LR1101G
sot-89 MARKING CODE 4A
Marking 1F SOT25
unisonic date code
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cms diode
Abstract: Diode schottky cms HSMS8202 package marking schottky diode hsms8202 uA 733 CMS2802 CMS2802DS Cross Reference sot23 microwave mixer diode
Text: Preliminary Data CMS-2802 Microwave Mixer Diode Description: Features: The Zywyn CMS-2802 Schottky Diode is designed for applications ranging from 10~14 GHz. It is optimized for use in X/Ku bands and is ideal for downconverter applications. It is available in plastic SOT-23 standard
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CMS-2802
CMS-2802
OT-23
packa05)
CMS2802DS
06/03A
CMS2802
HSMS8202
CMS-2802-TR2
CMS-2802-TR1
cms diode
Diode schottky cms
HSMS8202
package marking
schottky diode hsms8202
uA 733
CMS2802
Cross Reference sot23
microwave mixer diode
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302 SOT-23 DIODE
Abstract: marking codes transistors a1 sot-23 AME marking ASNWW 210F AME4041 AME4041AEETZ 2x marking sot-23 2X MARKING CODE SOT23 jc marking code sot23
Text: AME, Inc. AME4041 Shunt Bandgap Voltage Reference n General Description The AME4041 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.5% initial tolerance. The design of the AME4041
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AME4041
AME4041
OT-23
OT-23
0138BSC
2037-DS4041-
302 SOT-23 DIODE
marking codes transistors a1 sot-23
AME marking ASNWW
210F
AME4041AEETZ
2x marking sot-23
2X MARKING CODE SOT23
jc marking code sot23
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top side marking a02
Abstract: a02 sot-23 -5 210F AME4041 AME4041AEETZ 302 SOT-23 DIODE p 2F SOT23
Text: AME AME4041 Shunt Bandgap Voltage Reference n General Description The AME4041 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.5% initial tolerance. The design of the AME4041
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AME4041
AME4041
OT-23
OT-23
0138BSC
2037-DS4041-
top side marking a02
a02 sot-23 -5
210F
AME4041AEETZ
302 SOT-23 DIODE
p 2F SOT23
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Untitled
Abstract: No abstract text available
Text: AME AME4041 Shunt Bandgap Voltage Reference n General Description The AME4041 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ±0.5% initial tolerance. The design of the AME4041
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AME4041
AME4041
OT-23
OT-23A
OT-23A
2037-DS4041-
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AME385-2.5
Abstract: No abstract text available
Text: AME AME385-2.5 n General Description The AME385-2.5 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.50% and ± 0.80% initial tolerance. The design of the AME385-2.5 allows for a large range of load
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AME385-2
OT-23.
OT-23,
2003/2037-DS385-2
AME385-2.5
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AME385-1.2
Abstract: No abstract text available
Text: AME AME385-1.2 Shunt Bandgap Voltage Reference n General Description The AME385-1.2 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.5% initial tolerance. The design of the
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AME385-1
OT-23.
OT-23,
2003/2037-DS385-1
AME385-1.2
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AME40
Abstract: No abstract text available
Text: AME AME40 n General Description The AME40 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 40µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ±0.50% initial tolerance. The design of the AME40 allows for a large range of load capacitances and
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AME40
AME40
OT-23.
OT-23,
2003/2037-DS40-H
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AME41-1.2
Abstract: No abstract text available
Text: AME AME41-1.2 n General Description The AME41-1.2 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.50% initial tolerance. The design of the
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AME41-1
OT-23.
OT-23,
2003/2037-DS41-1
AME41-1.2
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AME385
Abstract: AME385BEET AME385BEETZ AME385BEHAZ TO-92-3 DEVICE MARKING CODE ABY 385-25
Text: AME AME385-2.5 n General Description The AME385-2.5 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.50% and ± 0.80% initial tolerance. The design of the AME385-2.5 allows for a large range of load
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AME385-2
OT-23.
OT-23,
2003/2037-DS385-2
AME385
AME385BEET
AME385BEETZ
AME385BEHAZ
TO-92-3
DEVICE MARKING CODE ABY
385-25
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD LR1101 CMOS IC 100mA, 4µA QUIESCENT CURRENT CMOS LDO REGULATOR DESCRIPTION The UTC LR1101 series are ultra-low quiescent current CMOS LDO Low Dropout Voltage . Designed for battery-powered system, the low 4 A quiescent current makes it an ideal choice. The Range
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LR1101
100mA,
LR1101
100mA.
450mV
100mA
QW-R102-034
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385-12
Abstract: AME385 AME385AEAS AME385AEET
Text: AME AME385-1.2 Shunt Bandgap Voltage Reference n General Description The AME385-1.2 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.5% initial tolerance. The design of the
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AME385-1
OT-23.
OT-23,
2003/2037-DS385-1
385-12
AME385
AME385AEAS
AME385AEET
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AME41
Abstract: AME41AEAS AME41AEAT AME41AEET
Text: AME AME41-1.2 n General Description The AME41-1.2 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.50% initial tolerance. The design of the
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AME41-1
OT-23.
OT-23,
2003/2037-DS41-1
AME41
AME41AEAS
AME41AEAT
AME41AEET
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AME40
Abstract: AME40AEAS AME40AEAT AME40AEET IR 010 SOP8 sop8 Package dimension
Text: AME AME40 n General Description The AME40 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 40µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.50% initial tolerance. The design of the AME40 allows for a large range of load capacitances and
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AME40
AME40
OT-23.
OT-23,
2003/2037-DS40-G
AME40AEAS
AME40AEAT
AME40AEET
IR 010 SOP8
sop8 Package dimension
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PMBT2369
Abstract: PMBT4401
Text: SMI SWITCHING TRANSISTORS DESCRIPTION • Philips Components sw itching transistors are fabricated using gold doping to reduce the minority carriers in the junction, thus improving the transition performance of the devices. All are specified for turn-off and turn-on
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OT-23,
OT-89
OT-223,
BSP43
BSR12
BSR13
BSR14
OT-89
OT-223
OT-223
PMBT2369
PMBT4401
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SMD CODE MARKING s7 SOT23
Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Text: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes
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applicat174
PMBFJ175
PMBFJ176
PMBFJ177
OT-23
OT-89
OT-143
OT-223
OT-23
SMD CODE MARKING s7 SOT23
PMBFJ111
PMBFJ174
BSR56
BFT46
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Untitled
Abstract: No abstract text available
Text: BAT54A; C; S _/ V SCHOTTKY BARRIER DIODE S ilicon epitaxial S chottky Barrier double diodes w ith an integrated p-n junction protection ring in a m icrom iniature SOT-23 envelope intended fo r surface mounting. The diodes feature an especially low forward voltage.
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BAT54A;
OT-23
UB817S
BAT54A
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marking of m7 diodes
Abstract: BCX19 ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B
Text: FERRANTI semiconductors BCX19 BCX20 NPN Silicon Planar M e d iu m Power Transistors DESCRIPTION These devices are intended fo r saturated sw itching, general purpose sw itching and driver applications. Com plementary to th e BCX17 and BCX18. Encapsulated in th e popular SOT-23 package these devices
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BCX19
BCX20
BCX17
BCX18.
OT-23
BCX20
FMMT-A13
FMMT-A14
marking of m7 diodes
ferranti
transistors marking jp
A12 marking
2w sot-23
BCW71
marking code AD
Diodes Marking K7
BCW67B
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