sky77528
Abstract: SKY77344 SKY77531 sky77534 srf 3417 SKY77526 SKY73009-11 SKY77518 sky77524 SKY77519
Text: Product Selection Guide Fall 2009 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,
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BRO254-09B
sky77528
SKY77344
SKY77531
sky77534
srf 3417
SKY77526
SKY73009-11
SKY77518
sky77524
SKY77519
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Untitled
Abstract: No abstract text available
Text: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 7 V Collector Current - Continuous IC 150 mA Total Device Dissipation FR-5 Board
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2SC1623
OT-23
30-Jul-10
OT-23
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Untitled
Abstract: No abstract text available
Text: LT431 ADJUSTABLE PRECISION SHUNT REGULATOR FEATURES • Precision reference voltage : LT431O : 2.495V±0.4% LT431N : 2.495V±1.0% • Adjustable output voltage is VREF to 36V • Sink current capability is 200mA • Low dynamic output impedance is 0.2Ω typ.
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LT431
LT431O
LT431N
200mA
LT431
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L2SC2411KQLT1G
Abstract: L2SC2411KRLT1G
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KQLT1G Series FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽ We declare that the material of product are Halogen Free and 2 compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION
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L2SC2411KQLT1G
L2SA1036K
236AB)
L2SC2411KQLT1G
3000/Tape
L2SC2411KQLT3G
10000/Tape
L2SC2411KRLT1G
L2SC2411KRLT3G
L2SC2411KRLT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KQLT1G Series FEATURE ƽEpitaxial planar type 3 ƽComplementary to L2SA1036K ƽ We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION
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L2SC2411KQLT1G
L2SA1036K
3000/Tape
L2SC2411KQLT3G
10000/Tape
L2SC2411KRLT1G
L2SC2411KRLT3G
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L2SC2411KRLT1G
Abstract: L2SC2411KPLT1 L2SC2411KPLT1G L2SC2411KQLT1 L2SC2411KQLT1G L2SC2411KRLT1 L2SC2411KLT1
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411K*LT1 FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT– 23 TO–236AB Marking Shipping
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L2SC2411K
L2SA1036K
236AB)
L2SC2411KPLT1
3000/Tape
L2SC2411KPLT1G
L2SC2411KQLT1
L2SC2411KQLT1G
L2SC2411KRLT1G
L2SC2411KPLT1
L2SC2411KPLT1G
L2SC2411KQLT1
L2SC2411KQLT1G
L2SC2411KRLT1
L2SC2411KLT1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KQLT1G Series S-L2SC2411KQLT1G Series FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K ƽ We declare that the material of product are Halogen Free and compliance with RoHS requirements.
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L2SC2411KQLT1G
S-L2SC2411KQLT1G
L2SA1036K
AEC-q101
L2SC2411KQLT3G
S-L2SC2411KQLT3G
L2SC2411KRLT1G
S-L2SC2411KRLT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KQLT1G Series S-L2SC2411KQLT1G Series FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K ƽ We declare that the material of product are Halogen Free and compliance with RoHS requirements.
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L2SC2411KQLT1G
S-L2SC2411KQLT1G
L2SA1036K
AEC-q101
L2SC2411KQLT3G
S-L2SC2411KQLT3G
L2SC2411KRLT1G
S-L2SC2411KRLT1G
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F600M
Abstract: S08230 l32 sot23 hp 3080 diode MARK, g5 sot23
Text: ¥J>0%. HEWLETT ft "Em PACKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodea Optimized fo r Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface M ount SOT-23
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HSMP-38XX
HSMP-48XX
OT-23
HEWPS057P*
6091-4211E
5091-B184E
F600M
S08230
l32 sot23
hp 3080 diode
MARK, g5 sot23
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smd diode marking A7 SOT-23
Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
Text: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad
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OT-23
OT-143
PMLL4151
PMLL4153
PMLL4446
PMLL4448
OT-223
OT-143
smd diode marking A7 SOT-23
SMD DIODE A6 t SOT-23
5d smd sot-23
L21 SMD
marking codes sot-23 A4
A7 w sot-23
diode SOT89 smd marking A5
sod a4 marking smd diode
SOT23 A6
smd diode marking A3 sot23
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RFTN
Abstract: WSD420
Text: WSD420 S u rface M oun t S ch ottk y lia rrier J iodes Feiftui^B: *Low Power Rectification *Snnaii Surface Mounting Type *Low r <1h =5t>nA Typ) *High Reliability Description: These schottky barrier diodes are designed for high speed switching application5 circuit protection, and voltage clampingj
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50nATyp)
OT-23
WSD420
-60Hz
WSD420
RFTN
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S3926
Abstract: S3928 SOT23 SB1 J3928-101 sa2 sot-23 sot23 marking sa2 DMJ3952-020
Text: GaAsRFICs and Modules S c h o ttk y Diodes Mixer/Detector/General Purpose Diodes H Œ—W— II Single SC-79 / y a Single SOT-23 / a y h Reverse Single SOT-23 A y y y I Common Cathode SOT-23 * * a a Series Pair SOT-23 y /X y y Reverse Series Pair SOT-23 y
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SC-79
OD-323
OT-23
OT-143
SMS1546-005
S3926
S3928
SOT23 SB1
J3928-101
sa2 sot-23
sot23 marking sa2
DMJ3952-020
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KDS181
Abstract: R22P
Text: _ SEMICONDUCTOR KOREA ELECTRONICS CO-LTD TECHNICAL DATA KDS181 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forward Voltag Fast Reverse Recovery Time Small Total Capacitance : SOT-23. : VF=0.92V Typ. .
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KDS181
OT-23.
01/xF
KDS181
R22P
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SOT-23 marking 12F
Abstract: 2000E7
Text: MOTOROLA Order this document by MMBF5460LT1/D SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P-Channel MMBF5460LT1 2 SOURCE MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc
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MMBF5460LT1/D
MMBF5460LT1
OT-23
O-236AB)
SOT-23 marking 12F
2000E7
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MARKING P1a
Abstract: VP2110N3
Text: = J U r — J J j S VP2106 VP2110 . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-92 DICE+ TO-236AB* -60V 12Q -0.5A VP2106N3 VP2106ND - -100V 12Q -0.5A VP2110N3 VP2110ND
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VP2106
VP2110
VP2106N3
VP2110N3
-100V
VP2106ND
VP2110ND
O-236AB*
VP2110K1
OT-23:
MARKING P1a
VP2110N3
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Untitled
Abstract: No abstract text available
Text: btS 3 T 31 □D 1 SS 4 S 7 OLE D N AUER PHILIPS/DISCRETE r - SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 envelope, primarily intended fo r low-noise input stages in tape recorders, hi-fi amplifiers and other audio frequency equipment in thick and thin-film hybrid circuits.
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OT-23
BC859
BC860
bbS3T31
BC859;
BC860;
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder th is docum ent by MMBV432LT1/D SEMICONDUCTOR TECHNICAL DATA S ilic o n Tlining Diode M M B V432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum
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MMBV432LT1/D
V432LT1
OT-23
3ti72SS
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30255
Abstract: qSOT-23
Text: M O T O R O L A SC i D I O D E S / O P T O } 6 3 6 7 2 5 5 M O T O R O L A SC 34 DF|b3b72SS DIODES/OPTO 34C 003Ô2SS q 30255 SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C I I • *— ' - t =i B Device D e s ig n e d fo r lo w -freq u en cy d river s ta g e an d switching
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b3b72SS
BCW66F
BCW66G
BCW66H
b3b725S
30255
qSOT-23
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV609LT1/D SEMICONDUCTOR TECHNICAL DATA S ilico n Tim ing Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum
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MMBV609LT1/D
MMBV609LT1
OT-23
b3b72S5
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bv609
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV609LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum
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MMBV609LT1/D
OT-23
bv609
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marking code vishay SILICONIX to-236
Abstract: marking code vishay SILICONIX to-72 vishay siliconix code marking to-92
Text: PAD/JPAD/SSTPAD Series Vishay Siliconix Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 SSTPAD5 JPAD50 SSTPAD100 PRODUCT SUMMARY lR Max pA PAD1 -1 PAD5/JPAD5/SSTPAD5 -5 PAD5Q/JPAD50 -50 SSTPAD100 -100 FEATURES BENEFITS APPLICATIONS • Ultralow Leakage: PAD1 <1 pA
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PAD50
PAD5Q/JPAD50
SSTPAD100
JPAD50
They50
SSTPAD100
SSTPAD5/100
S-04029--Rev.
04-Jun-01
marking code vishay SILICONIX to-236
marking code vishay SILICONIX to-72
vishay siliconix code marking to-92
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV3102LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 S ilic o n Tuning D iode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical
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MMBV3102LT1/D
MMBV3102LT1
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S CR E T E bb53T31 D01SbS3 DbE D BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli cations in thick and thin-film circuits. QUICK R E FE R E N C E D ATA
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bb53T31
D01SbS3
BCW29
BCW30
001SLE7
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transistor R2U
Abstract: SSTA63 marking B25 transistor b25
Text: PNP Darlington transistor Die no. B-25 These are epitaxial planar PNP silicon Darlington transistors. Features • Dimensions Units : mm SST3 available in a SST3 (SST, SOT-23) package, see page 300 • collector-to-emitter breakdown voltage, BVCES = 30 V (min)
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OT-23)
SSTA63
100MHz
200MHz
300MHz
transistor R2U
marking B25
transistor b25
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