Untitled
Abstract: No abstract text available
Text: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage
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BSS123.
ZXM41N10F
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BAL74
Abstract: MARKING SOT23 jbs BAR74 SOT23 BAL74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
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BAL74/BAR74.
BAL74
BAR74
BAL74,
BAL74
MARKING SOT23 jbs
BAR74
SOT23 BAL74
BCW66
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ZXM41N0F
Abstract: No abstract text available
Text: ZXM41N0F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR
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ZXM41N0F
ZXM41N0F
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ZXM41N0F
Abstract: ZXM41N10F
Text: ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR
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ZXM41N10F
ZXM41N0F
ZXM41N10F
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BAL74
Abstract: BAR74 sot23 marking code 74
Text: BAL74/BAR74. Silicon Switching Diode For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAL74,
BAR74
sot23 marking code 74
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BAL74
Abstract: BAR74
Text: BAL74/BAR74. Silicon Switching Diode For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAL74,
BAR74
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BAS20 SOT23
Abstract: bas21 jss BAS19 BAS20 BAS21
Text: BAS19.BAS21 3 Silicon Switching Diodes High-speed, high-voltage switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking Pin Configuration Package BAS19 JPs 1=A 2 = n.c. 3=C SOT23 BAS20 JRs 1=A 2 = n.c. 3=C SOT23 BAS21 JSs 1=A 2 = n.c. 3=C SOT23 Maximum Ratings
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BAS19.
BAS21
VPS05161
EHA07002
BAS19
BAS20
BAS20 SOT23
bas21 jss
BAS19
BAS20
BAS21
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sot23 DIODE marking AV
Abstract: marking D58 FLLD258 FLLD261 FLLD263 330 marking diode DSA003688
Text: SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR FLLD258 ISSUE 2 SEPTEMBER 1995 ✪ 1 2 1 3 2 3 SOT23 PART MARKING DETAIL D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current
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FLLD258
400mA
-200mA
sot23 DIODE marking AV
marking D58
FLLD258
FLLD261
FLLD263
330 marking diode
DSA003688
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Untitled
Abstract: No abstract text available
Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3 High collector current High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage
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SMBTA63,
SMBTA64
SMBTA63
VPS05161
EHP00364
EHP00215
EHP00415
EHP00365
Aug-20-2001
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S2V 80
Abstract: SMBTA63 SMBTA64
Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3 High collector current High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage
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SMBTA63,
SMBTA64
SMBTA63
VPS05161
EHP00364
EHP00215
EHP00415
EHP00365
Nov-30-2001
S2V 80
SMBTA63
SMBTA64
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Untitled
Abstract: No abstract text available
Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3 High collector current High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage
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SMBTA63,
SMBTA64
VPS05161
SMBTA63
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330 marking diode
Abstract: marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 SEPTEMBER 1995 ✪ DIODE PIN CONNECTION 2 1 3 3 2 1 SOT23 PART MARKING DETAIL P8A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current
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FLLD261
400mA
-200mA
330 marking diode
marking SOT23 V 4 diode
FLLD258
FLLD261
FLLD263
MARKING P8A
DSA003670
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MV SOT23
Abstract: ZC2812E NA MARKING SOT23 test SOt23 ZC2811E NA SOT23 sot23 1V ZC2813E marking 54 sot23
Text: SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - NOVEMBER 1995 ZC2812E ZC2813E ✪ 1 1 2 1 3 2 3 3 2 ZC2813E ZC2812E SOT23 Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range
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ZC2812E
ZC2813E
ZC2811E
MV SOT23
ZC2812E
NA MARKING SOT23
test SOt23
NA SOT23
sot23 1V
ZC2813E
marking 54 sot23
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330 marking diode
Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
Text: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60
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FLLD258
FLLD261
FLLD263
400mA
-200mA
330 marking diode
FLLD263
marking SOT23 V 4 diode
NA MARKING SOT23
FLLD258
FLLD261
diode 100V 80 A
IR 50
DSA003689
marking d63
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BAL74
Abstract: BAR74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAR74
BCW66
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Untitled
Abstract: No abstract text available
Text: SMBTA13, SMBTA14 NPN Silicon Darlington Transistors 3 High DC current gain High collector current Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14 s1N 1=B 2=E 3=C SOT23 VPS05161 Package
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SMBTA13,
SMBTA14
VPS05161
SMBTA13
SMBTA14
EHP00826
EHP00827
EHP00828
EHP00829
Nov-30-2001
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darlington sot23 npn
Abstract: S1M sot23 SMBTA13 SMBTA14
Text: SMBTA13, SMBTA14 NPN Silicon Darlington Transistors 3 High DC current gain High collector current Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14 s1N 1=B 2=E 3=C SOT23 VPS05161 Package
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SMBTA13,
SMBTA14
SMBTA13
VPS05161
EHP00826
EHP00827
EHP00828
EHP00829
Jul-12-2001
darlington sot23 npn
S1M sot23
SMBTA13
SMBTA14
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Untitled
Abstract: No abstract text available
Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23
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BCV27,
BCV47
BCV26,
BCV46
VPS05161
BCV27
BCV47
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Untitled
Abstract: No abstract text available
Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23
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BCV26,
BCV46
BCV27,
BCV47
VPS05161
BCV26
BCV46
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Marking Code FGs
Abstract: No abstract text available
Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23
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BCV27,
BCV47
BCV26,
BCV46
VPS05161
BCV27
BCV47
Marking Code FGs
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Untitled
Abstract: No abstract text available
Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER
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OCR Scan
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ZC2812E
ZC2813E
lplt-20m
ZC2811E
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marking 54 sot23
Abstract: ZC2812
Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES IS S U E 3 -NOVEMBER 1995_ Q _ 1. 1 1 3 3 - i XX XX 2 ' 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L
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OCR Scan
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ZC2812E
ZC2813E
ZC2811E
marking 54 sot23
ZC2812
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 - SEPTEMBER 1995 O '- DIODE PIN CO NNECTION — N r^H 1 3 SOT23 PART MARKING DETAIL - P8A A BSO LU TE M A X IM U M RATINGS. PARAM ETER SYM BO L Repetitive Peak Reverse Voltage
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OCR Scan
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FLLD261
f100V,
-200m
FLLD263
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MARKING SY SOT23
Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330
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FLLD261
-200m
FLLD263
MARKING SY SOT23
SY SOT23
MARKING SOT23-3 LF
MARKING P8A
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