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    SOT23 NPN 1K Search Results

    SOT23 NPN 1K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    SOT23 NPN 1K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MV SOT23

    Abstract: PARTMARKING at FMMT5209 FMMT5210 DSA003697
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JULY 1995 FMMT5209 FMMT5210 ✪ PARTMARKING DETAILS: FMMT5209 - 2Q FMMT5210 - 2R E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage


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    FMMT5209 FMMT5210 FMMT5209 FMMT5210 20MHz 15KHz MV SOT23 PARTMARKING at DSA003697 PDF

    K1 transistor

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.


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    FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor PDF

    FMMT2484

    Abstract: DSA003691 power ic 5v
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 – MARCH 94 FEATURES * 60 Volt VCEO FMMT2484 ✪ E C PARTMARKING DETAIL – 4G B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage


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    FMMT2484 140KHz 200Hz 15kHz FMMT2484 DSA003691 power ic 5v PDF

    BC848A

    Abstract: No abstract text available
    Text: BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion   Complementary PNP Types: BC856 BC858   For switching and AF Amplifier Applications Case: SOT23 Case material: molded plastic, “Green” molding compound


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    BC846A-BC848C BC856 BC858 AEC-Q101 J-STD-020 MIL-STD-202, BC846A BC848C DS11108 BC848A PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound


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    FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEO > 60V • • IC = 1A Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound


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    FMMT491 500mW FMMT591 AEC-Q101 DS33091 PDF

    BCW66FR

    Abstract: BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR BCW66GR BCW66HR BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    BCW66F BCW66G BCW66H BCW66FR BCW66GR BCW66HR BCW66 BCW68 100mA, BCW66FR BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68 PDF

    CM12A

    Abstract: br 2222 npn ZX5T651F
    Text: ZX5T651F ADVANCED ISSUE SOT23 NPN SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 150V V(BR)CEO > 60V Ic(cont) = 4A Rce(sat) = 31 m typical Vce(sat) < 60 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS


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    ZX5T651F ZX5T651FTA CM12A br 2222 npn ZX5T651F PDF

    MV SOT23

    Abstract: diode bcv71 k9 diode BCV71 BCV71R BCV72 BCV72R bcv72r k9 DSA003672
    Text: BCV71 BCV72 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 – FEBRUARY 95 PARTMARKING DETAIL: — BCV71 BCV72 BCV71R BCV72R – – – – K7 K8 K6 K9 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V


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    BCV71 BCV72 BCV71R BCV72R 35MHz 200Hz MV SOT23 diode bcv71 k9 diode BCV71 BCV71R BCV72 BCV72R bcv72r k9 DSA003672 PDF

    transistor n53

    Abstract: ZX5T653F h 033 Marking N53
    Text: ZX5T653F ADVANCED ISSUE SOT23 NPN SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 200V V(BR)CEO > 100V Ic(cont) = 3.5A Rce(sat) = 40 m typical Vce(sat) < 75 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS


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    ZX5T653F ZX5T653FTA transistor n53 ZX5T653F h 033 Marking N53 PDF

    FMMT493A

    Abstract: FMMT493ATA FMMT493ATC
    Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring


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    FMMT493A 250mA FMMT493ATA FMMT493ATC FMMT493A FMMT493ATA FMMT493ATC PDF

    FMMT493A

    Abstract: FMMT493ATA FMMT493ATC
    Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring


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    FMMT493A 250mA FMMT493ATA FMMT493ATC FMMT493A FMMT493ATA FMMT493ATC PDF

    FMMT493ATA

    Abstract: No abstract text available
    Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring


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    FMMT493A 250mA FMMT493ATA FMMT493ATC FMMT452) 522-FMMT493ATA FMMT493ATA PDF

    ZXTN5551FL

    Abstract: TS16949 ZXTP5401FL
    Text: ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 330mW Complementary part number ZXTP5401FL Description C A high voltage NPN transistor in a small outline surface mount package. Features • 160V rating


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    ZXTN5551FL 600mA 330mW ZXTP5401FL ZXTN5551FLTA D-81541 ZXTN5551FL TS16949 ZXTP5401FL PDF

    transistor smd marking NE

    Abstract: sot-23 marking NE CMBT847 MARKING NE SOT23 MA COM marking
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    CMBT847 100uA, C-120 transistor smd marking NE sot-23 marking NE CMBT847 MARKING NE SOT23 MA COM marking PDF

    NB smd transistor

    Abstract: NB SMD SOT-23 NB SOT-23 NPN transistor smd marking nb CMBA847 NB 40 smd transistor smd transistor MARKING nb sot23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    CMBA847 100uA, C-120 NB smd transistor NB SMD SOT-23 NB SOT-23 NPN transistor smd marking nb CMBA847 NB 40 smd transistor smd transistor MARKING nb sot23 PDF

    CMBA847

    Abstract: transistor smd marking BA sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    CMBA847 100uA, C-120 CMBA847 transistor smd marking BA sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR


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    CMBT2484 C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL TRANSISTOR CSC2713 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3


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    CSC2713 CSA1163 25deg C-120 PDF

    transistor smd marking BA RE

    Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)


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    CMBT2484 C-120 transistor smd marking BA RE transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23 PDF

    ts 4141 TRANSISTOR smd

    Abstract: CMBT2484
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)


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    CMBT2484 C-120 ts 4141 TRANSISTOR smd CMBT2484 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTOR ISSUE 2 - MARCH 94 FMMT2484 Q FEATURES * 60 Volt V,CEO PARTMARKING DETAIL - 4G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V CBO 60 V V CEO 60 V Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan
    FMMT2484 VCEr45V, 100uA* 500uA, 140KHz 200Hz 15kHz 300us. PDF

    Untitled

    Abstract: No abstract text available
    Text: FMM T4400 FMMT4401 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTOR PARTMARKING DETAILS: FMMT4400 - 1K FMMT4401 - 1L ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb = 25°C


    OCR Scan
    T4400 FMMT4401 FMMT4400 FMMT4401 FMMT4400/4401 FMMT4400 200/is. PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSU E 3 - JANUARY 1996 FEATURES * * High ÎT-900M H Z M in M axcapacitance=1pF * Low noise 4.5dB Wl A fe ', P A R T M A R K IN G D ET A IL -1 7 9 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L


    OCR Scan
    T-900M 100MHz 200MHz FMMT5179 00CH337 PDF