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    SOT23 TRANSISTOR MARKING 12E Search Results

    SOT23 TRANSISTOR MARKING 12E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    SOT23 TRANSISTOR MARKING 12E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power 22E

    Abstract: SMBT3906 1N916 SMBT3904
    Text: SMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type Marking SMBT3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT3904 100mA SMBT3906 VPS05161 Jul-11-2001 EHP00763 EHP00764 EHP00757 power 22E SMBT3906 1N916 SMBT3904

    power 22E

    Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


    Original     		PDF SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Aug-20-2001 EHP00769 power 22E TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A

    power 22E

    Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


    Original     		PDF SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Nov-30-2001 EHP00769 power 22E TRANSISTOR S2A SMBT3906 1N916 SMBT3904

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    sot23 transistor marking 12E

    Abstract: TRANSISTOR S2A CH3906PT power 22E 1N916 SOT-23 marking S2A marking s2A sot23
    Text: CHENMKO ENTERPRISE CO.,LTD CH3906PT SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		PDF CH3906PT OT-23 OT-23) 200mA) 1N916 sot23 transistor marking 12E TRANSISTOR S2A CH3906PT power 22E 1N916 SOT-23 marking S2A marking s2A sot23

    ch3904pt

    Abstract: transistor marking s1a "marking s1a" sot-23 TRANSISTOR S1A 64 S1A sot-23 sot23 s1a marking sot23 transistor marking 12E ch3904 1N916 MA103
    Text: CHENMKO ENTERPRISE CO.,LTD CH3904PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		PDF CH3904PT OT-23 OT-23) 200mA) 1N916 ch3904pt transistor marking s1a "marking s1a" sot-23 TRANSISTOR S1A 64 S1A sot-23 sot23 s1a marking sot23 transistor marking 12E ch3904 1N916 MA103

    MARKING 3FS

    Abstract: MARKING CODE 21E SOT23 marking 3ks
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A MARKING 3FS MARKING CODE 21E SOT23 marking 3ks

    Motorola transistor smd marking codes

    Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
    Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases


    Original     		PDF OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d

    BCX 71G E6327

    Abstract: BKs SOT23 sot23 transistor marking 12E BNS 180 BHS SOT23
    Text: BCW61, BCX71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration


    Original     		PDF BCW61, BCX71 BCW60, BCX70 VPS05161 Apr-12-2002 BCX 71G E6327 BKs SOT23 sot23 transistor marking 12E BNS 180 BHS SOT23

    BCW61

    Abstract: BCX71 BCs sot23 marking BJs SOT23 sot23 transistor marking 12E 61FN BJs SOT23 BKs SOT23 BCW60 BCW61FF
    Text: BCW61, BCX71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration


    Original     		PDF BCW61, BCX71 BCW60, BCX70 120Hz 61/BCX EHP00356 EHP00357 10kHz BCW61 BCX71 BCs sot23 marking BJs SOT23 sot23 transistor marking 12E 61FN BJs SOT23 BKs SOT23 BCW60 BCW61FF

    BCW61FF

    Abstract: BCs sot23
    Text: BCW 61, BCX 71 PNP Silicon AF Transistor • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking


    Original     		PDF OT-23 120Hz BCW61FF BCs sot23

    BCX71

    Abstract: marking BJs SOT23 BCW60 BCW61 BCW61FF BCX70 61FN
    Text: BCW61, BCX71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration


    Original     		PDF BCW61, BCX71 BCW60, BCX70 71KRS 120Hz 61/BCX EHP00356 EHP00357 BCX71 marking BJs SOT23 BCW60 BCW61 BCW61FF BCX70 61FN

    71 SOT-23

    Abstract: No abstract text available
    Text: BCW 61, BCX 71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking Pin Configuration


    Original     		PDF OT-23 61/BCX 71 SOT-23

    bcx71

    Abstract: No abstract text available
    Text: BCW61, BCX71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration


    Original     		PDF BCW61, BCX71 BCW60, BCX70 VPS05161 Apr-12-2002 bcx71

    CH3904SPT

    Abstract: 1N916
    Text: CHENMKO ENTERPRISE CO.,LTD CH3904SPT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363


    Original     		PDF CH3904SPT SC-88/SOT-363 SC-88/SOT-363) 200mA) OT-23 1N916 CH3904SPT 1N916

    S1A MARKING CODE

    Abstract: marking code S1A sot23 H12E
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


    Original     		PDF SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 S1A MARKING CODE marking code S1A sot23 H12E

    MMBR2857

    Abstract: sot23 transistor marking 12E MMBR2857 MOTOROLA BR2857
    Text: 12E D I b3fc,7aS4 DQÔ7EÛ1 3 | MOTOROLA SC MOTOROLA XSTRS/R F - - SEM ICONDUCTOR TECHNICAL DATA MMBR2857 The RF Line Ole Source Same as 2N2857 IMPN Silicon High Frequency Transistor . designed primarily for use in high-gain, low-noise amplifier, oscillator


    OCR Scan     		PDF MMBR2857 2N2857 MMBR2857 sot23 transistor marking 12E MMBR2857 MOTOROLA BR2857

    sot23 transistor marking 12E

    Abstract: No abstract text available
    Text: M O T OR O L A SC X S T R S /R F 12E D I t>3b72SM GGf lt iOGZ 1 | M AXIM U M RATINGS Symbol Value Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VcBO 30 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Symbol Max Unit PD 225 mW Rating Unit MMBTH10L CASE 318-03, STYLE 6


    OCR Scan     		PDF 3b72SM MMBTH10L OT-23 O-236AB) sot23 transistor marking 12E

    MMBF4416L

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 12E D | b3fc.?aS4 aüöb7b3 S | M A XIM U M RATINGS Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage Vdg 30 Vdc Gate-Source Voltage Vg s 30 Vdc 'g 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C Ra j a 556 °c/w Pd 300


    OCR Scan     		PDF MMBF4416L OT-23 O-236AB) MMBF4416L

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-F1062 OT-23 BFT92 H35bD5 900MHz

    sot23 transistor marking 12E

    Abstract: 12E MARKING kec marking N
    Text: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES • Low Noise Figure, High Gain. • NF=1.2dB, |S2le|2=13dB f=lGHz . ° MAXIMUM RATING (Ta=25°C) ! SYMBOL V cB O V cE O V e bo Ic J i Mlà


    OCR Scan     		PDF KTC3790S sot23 transistor marking 12E 12E MARKING kec marking N

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)


    OCR Scan     		PDF Q68000-A4417 OT-23 EHP00770 EHP00772 S35bOÂ 01EES4S A235b05 012254b

    3906

    Abstract: sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High D C current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SM B T 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)


    OCR Scan     		PDF Q68000-A4417 OT-23 EHP0Q77Q 3906 sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23