102k1k
Abstract: 20M diode zener LDTDG12GPLT1G
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPLT1G
500mA
OT-23
102k1k
20M diode zener
LDTDG12GPLT1G
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LDTBG12GPLT1G
Abstract: 102k1k marking 20M resistor 20M diode zener
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTBG12GPLT1G
500mA
OT-23
LDTBG12GPLT1G
102k1k
marking 20M resistor
20M diode zener
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sot23 transistor marking ZF
Abstract: No abstract text available
Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*
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2N4126
MMBT4126
2N4126
OT-23
2N4126TA
2N4126BU
O-92-3
sot23 transistor marking ZF
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102k1k
Abstract: LDTBG12GPT1G SC-89
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTBG12GPT1G
500mA
OT-23
SC-89
463C-01
463C-02.
102k1k
LDTBG12GPT1G
SC-89
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MARKING W3 SOT23 TRANSISTOR
Abstract: SOT-23 ZF MARKING ZF SOT-23 Mark ZF sot-23 MARKING CODE Zf 2n4126
Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*
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2N4126
MMBT4126
2N4126
OT-23
2N4126TA
2N4126BU
O-92-3
MARKING W3 SOT23 TRANSISTOR
SOT-23 ZF
MARKING ZF SOT-23
Mark ZF
sot-23 MARKING CODE Zf
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NB SOT-23 NPN
Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to
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CH3904T
CHT2222T
2SC4097
CH3904W
CHT05
CHT42
CHTA42L
CHT44
2SC2411K
2SC2412K
NB SOT-23 NPN
ch3904
CHT44
transistor marking s1a
transistor s1p
marking 1P sot-23
T05 sot-23
transistor marking t05
transistor C4G sot-23
39 MARKING SOT223
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N5 npn transistor
Abstract: Marking N5
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC144ELT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
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LDTC144ELT1G
OT-23
N5 npn transistor
Marking N5
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A6c transistor
Abstract: transistor a6c MARKING A6C SOT-23 LDTA144ELT1G
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA144ELT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
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LDTA144ELT1G
OT-23
A6c transistor
transistor a6c
MARKING A6C SOT-23
LDTA144ELT1G
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a6j* pnp transistor
Abstract: transistor A6j LDTA143ELT1G Inverter A6J a6j datasheet marking A6J
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA143ELT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
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LDTA143ELT1G
OT-23
a6j* pnp transistor
transistor A6j
LDTA143ELT1G
Inverter A6J
a6j datasheet
marking A6J
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marking a8c
Abstract: MARKING A8C SOT-23 A8c transistor
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC144ELT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
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LDTC144ELT1G
OT-23
marking a8c
MARKING A8C SOT-23
A8c transistor
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transistor p13
Abstract: LDTA114WLT1G marking P13 sot-23 p13 transistor
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA114WLT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
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LDTA114WLT1G
OT-23
transistor p13
LDTA114WLT1G
marking P13 sot-23
p13 transistor
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2SB772P
Abstract: SOT-23 marking 717 cht9435zpt CH3906XPT 9435Z CHT2907XPT CH772PT CH3906 CH772P 2SB772PT-E
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA -500 -200 -150 -150 -150 -500 -200 -150 -150 -150 -500 -200 -600 -100 -100 -100 -600 -200 -600
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SC-62
2SB772P
SOT-23 marking 717
cht9435zpt
CH3906XPT
9435Z
CHT2907XPT
CH772PT
CH3906
CH772P
2SB772PT-E
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PNP marking NY sot-223
Abstract: TRANSISTOR S2A 2F PNP SOT23 2SA1036K s2A SOT23 marking NY sot-223 transistors sot-223 transistor circuit s2A PART MARKING SOT-23 TRANSISTOR CH3906
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to Dissipation Bandwidh No. Emitter Collector Current DC Current Gain
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CHTA64X
CHT3906X
CHT2907X
CHT4033X
CHT5401X
CHTA92X
CHTA64Z
CHT3906Z
CHT2907Z
CHT2955Z
PNP marking NY sot-223
TRANSISTOR S2A
2F PNP SOT23
2SA1036K
s2A SOT23
marking NY sot-223
transistors sot-223
transistor circuit
s2A PART MARKING SOT-23
TRANSISTOR CH3906
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2SD882P
Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200
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SC-62
2SD882P
ch3904
marking J1 sot-23
T05 sot-23
sot-23 marking NE
MARKING J3 SOT-23
marking NB SOT-23
CHT846BWPTR
LT 723 ic
marking J2 sot-23
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT PBSS5240T 40 V, 2 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2001 Oct 31 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T FEATURES QUICK REFERENCE DATA
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PBSS5240T
OT89/SOT223
R75/02/pp9
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sot23 transistor marking ZF
Abstract: PBSS4240T PBSS5240T
Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2001 Oct 31 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T FEATURES QUICK REFERENCE DATA
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PBSS5240T
OT89/SOT223
R75/02/pp9
sot23 transistor marking ZF
PBSS4240T
PBSS5240T
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sot23 transistor marking ZF
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5240T 40 V low VCEsat PNP transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage
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M3D088
PBSS5240T
OT89/SOT223
SCA73
613514/01/pp12
sot23 transistor marking ZF
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L2SD2114KVLT1G
Abstract: L2SD2114KWLT1G
Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)
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L2SD2114KVLT1G
500mA
236AB)
OT-23
L2SD2114KWLT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114K*LT1G zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.
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L2SD2114K
500mA
236AB)
OT-23
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated BCV46 60V PNP DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -60V Darlington Transistor hFE > 10k @ 100mA for high gain IC = -500mA High Continuous Collector Current
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BCV46
100mA
-500mA
BCV47
AEC-Q101
J-STD-020
MIL-STD-202,
DS33002
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BCV47TC
Abstract: BCV47
Text: A Product Line of Diodes Incorporated BCV47 60V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 60V Darlington Transistor hFE > 10k @ 100mA for high gain IC = 500mA high Continuous Collector Current
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BCV47
100mA
500mA
BCV46
AEC-Q101
J-STD-020
MIL-STD-202,
DS33001
BCV47TC
BCV47
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MMSTA28
Abstract: SSTA28 T116 T146
Text: SSTA28 / MMSTA28 Transistors NPN general purpose transistor SSTA28 / MMSTA28 zFeatures 1 BVCES < 80V Ic=100µA) zExternal dimensions (Unit : mm) SSTA28 2.9±0.2 MMSTA28 SMT3 RAT T146 3000 2.9±0.2 1.1 +0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 Unit V V V A
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SSTA28
MMSTA28
SSTA28
SC-59
OT-346
MMSTA28
T116
T146
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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