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    SOT23-3 BSS84 Search Results

    SOT23-3 BSS84 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    SOT23-3 BSS84 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS84AK

    Abstract: BSS84AK/DG/B2215
    Text: SO T2 3 BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS84AK O-236AB) AEC-Q101 771-BSS84AK215 BSS84AK BSS84AK/DG/B2215

    NXP SMD mosfet MARKING CODE

    Abstract: Silicon P-Channel Junction FET sot23 1140mw NXP TRANSISTOR SMD MARKING CODE SOT23 transistor replacement
    Text: SO T2 3 BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS84AK O-236AB) AEC-Q101 NXP SMD mosfet MARKING CODE Silicon P-Channel Junction FET sot23 1140mw NXP TRANSISTOR SMD MARKING CODE SOT23 transistor replacement

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS84AK O-236AB) AEC-Q101

    BSS110

    Abstract: BSS84
    Text: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF BSS84 BSS110 BSS84: BSS110: BSS110

    BSS110

    Abstract: BSS84 CBVK741B019 F63TNR PN2222N
    Text: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF BSS84 BSS110 BSS84: BSS110: BSS110 CBVK741B019 F63TNR PN2222N

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149

    BSS84Q-7-F

    Abstract: BSS84 Equivalent K84 SOT23 BSS84Q BSS84Q-13-F BSS84
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149 BSS84Q-7-F BSS84 Equivalent K84 SOT23 BSS84Q BSS84Q-13-F BSS84

    DS30149

    Abstract: BSS84 BSS84 Equivalent BSS84Q-7-F BSS84 MARKING CODE
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149 BSS84 BSS84 Equivalent BSS84Q-7-F BSS84 MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149

    p-channel SOT-23 K84

    Abstract: transistor k84 k84 transistor sot-23 BSS84 marking code SOT-23
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits • • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149 p-channel SOT-23 K84 transistor k84 k84 transistor sot-23 BSS84 marking code SOT-23

    BSS84

    Abstract: p-channel SOT-23 K84
    Text: BSS84 Lead-free P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF BSS84 AEC-Q101 OT-23 OT-23 J-STD-020C MIL-STD-202, DS30149 BSS84 p-channel SOT-23 K84

    BSS84-7-F

    Abstract: p-channel SOT-23 K84 BSS84 MARKING CODE bss84 spice marking code 27a BSS84 BSS84 marking code SOT-23 transistor k84
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF BSS84 AEC-Q101 OT-23 J-STD-020C MIL-STD-202, DS30149 BSS84-7-F p-channel SOT-23 K84 BSS84 MARKING CODE bss84 spice marking code 27a BSS84 BSS84 marking code SOT-23 transistor k84

    BSS84 P

    Abstract: BSS84 GSOT-23
    Text: BSS84 P-channel enhancement mode vertical D-MOS transistor Rev. 04 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical D-MOS transistor in a SOT23 Surface-Mount Device SMD package. 1.2 Features


    Original     		PDF BSS84 BSS84 P BSS84 GSOT-23

    bss84

    Abstract: TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84.215
    Text: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF BSS84 BSS84 BSS84/DG O-236AB 771-BSS84-T/R TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84.215

    BSS84 MARKING CODE

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 NXP SMD TRANSISTOR MARKING CODE smd code marking WV TRANSISTOR SMD MARKING CODES TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84 Equivalent BSS84 marking code e1 smd
    Text: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 05 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF BSS84 O-236AB BSS84/DG BSS84 MARKING CODE TRANSISTOR SMD CODE PACKAGE SOT23 NXP SMD TRANSISTOR MARKING CODE smd code marking WV TRANSISTOR SMD MARKING CODES TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84 Equivalent BSS84 marking code e1 smd

    BSS84

    Abstract: BSS84 nxp TRANSISTOR SMD MARKING CODES BSS84 marking marking code DG SMD Transistor bss84 e-6327
    Text: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF BSS84 O-236AB BSS84/DG BSS84 BSS84 nxp TRANSISTOR SMD MARKING CODES BSS84 marking marking code DG SMD Transistor bss84 e-6327

    Untitled

    Abstract: No abstract text available
    Text: • bbS3131 □0236'ia 343 H A P X Philips Sem iconductors Data sheet status Product specification date of issue July 1993 0 g 3 3 4 N AMER PHILIPS/DISCRETE P-channel enhancement mode vertical D-MOS FET PINNING - SOT23 D ESCRIPTIO N Silicon p-channel enhancement


    OCR Scan     		PDF bbS3131

    bss170

    Abstract: No abstract text available
    Text: SOT23 'If SMALL SIGNAL MOSFETS SOTFETs Pinout : 1-Drain, 2-Source, 3-Gate Type b mA BV qss V !DM A PD mW V GE;<th) M in/M ax at lD V mA RDS(on) a at Max mA to V GS V 10 N-CHANNEl ZVN3320F 200 60 1.0 330 1.0/3.0 1.0 25.0 100 BSS123 100 170 0.68 360 0.8/2.8


    OCR Scan     		PDF ZVN3320F BSS123 BSS123A ZVN3310F BST82 ZVN4106F ZVN3306F FMMJ4391 FMMJ4392 FMMJ4393 bss170

    bss170

    Abstract: BSS170F MJ174
    Text: SOT23 SM ALL SIGNAL M O SFETS SO TFETs '• Pinout : 1-Drain, 2-Source, 3-Gate Type BV q s s V !d mA !dm A PD mW R DS(on) VGS><th) Min/Max at lD mA V £2 at Max •d mA V GS V 10 N-CHANNEL; ZVN3320F 200 60 1.0 330 1.0/3.0 1.0 25.0 100 BSS123 100 170 0.68


    OCR Scan     		PDF ZVN3320F BSS123 BSS123A ZVN3310F BST82 ZVN4106F ZVN3306F 2N7002 VN10LF BSS170F bss170 MJ174

    Diode U160

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BSS84LT1/D SEMICONDUCTOR TECHNICAL DATA L i n e Green BSS84LT1 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Motorola Preferred Device P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET 3 DRAIN CASE 318-08, Style 21


    OCR Scan     		PDF BSS84LT1/D BSS84LT1 OT-23 236AB) Diode U160

    TRANSISTOR SMD MARKING CODE SP

    Abstract: smd "code rc" transistor marking code sp TRANSISTOR SMD MARKING CODE X D transistor SMD 520 BSS84 transistor SMD MARKING CODE marking code br SMD transistor marking code SS SOT23 transistor smd transistor 24 sot23
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 PINNING - SOT23 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. PIN SYMBOL


    OCR Scan     		PDF BSS84 1997Jun TRANSISTOR SMD MARKING CODE SP smd "code rc" transistor marking code sp TRANSISTOR SMD MARKING CODE X D transistor SMD 520 transistor SMD MARKING CODE marking code br SMD transistor marking code SS SOT23 transistor smd transistor 24 sot23