VM MARKING CODE SOT23-5
Abstract: NET50 NET153
Text: sig n TSM105 • ■ ■ ■ ORDER CODE Part Number Package Temperature Range TSM105CLT TSM105CD Marking L D • 0 to 85°C 0 to 85°C • M105 TSM105 L = Tiny Package SOT23-5 - only available in Tape & Reel (LT) D = Small Outline Package (SO) - also available in Tape & Reel (DT)
|
Original
|
TSM105CLT
TSM105CD
TSM105
VM MARKING CODE SOT23-5
NET50
NET153
|
PDF
|
XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
|
Original
|
24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
|
PDF
|
k72 sot-23
Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Text: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS
|
Original
|
2N7002DW
OT-363
2N7002T
2SK3019
OT-523
2N7002KW
2N7002W
2SK3018
O-251
k72 sot-23
sot-23 Marking KN
72k SOT23
k72 r4
UM6K1
SI2302
SI2303
|
PDF
|
s72 sot 23
Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
Text: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA
|
Original
|
BS870
2N7002
OT-23
BS850
22N7002
BS170
s72 sot 23
transistor marking s72
2N7019
2N7002 MARKING s72
2N7002 S72 SOT-23
s72 SOT23
Transistor s72 sot23
transistor s72
S72 Transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Comchip MOSFET SMD Diode Specialist CJ3401-HF P-Channel Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -P-Channel -High dense cell design for extremely low RDS(ON) 3 -Exceptional on-resistance and miximum DC current
|
Original
|
CJ3401-HF
OT-23
OT-23,
MIL-STD-750,
QW-JTR04
|
PDF
|
smd diode marking Ja sot
Abstract: No abstract text available
Text: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide
|
Original
|
CJ3404-HF
OT-23
OT-23,
MIL-STD-750,
QW-JTR05
smd diode marking Ja sot
|
PDF
|
device marking code sot23-5 mosfet
Abstract: No abstract text available
Text: Comchip MOSFET SMD Diode Specialist CJ3401-HF P-Channel Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -P-Channel -High dense cell design for extremely low RDS(ON) 3 -Exceptional on-resistance and miximum DC current
|
Original
|
CJ3401-HF
OT-23
OT-23,
MIL-STD-750,
QW-JTR04
device marking code sot23-5 mosfet
|
PDF
|
MOSFET TRANSISTOR SMD MARKING CODE
Abstract: MOSFET marking smd
Text: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide
|
Original
|
CJ3404-HF
OT-23
OT-23,
MIL-STD-750,
QW-JTR05
MOSFET TRANSISTOR SMD MARKING CODE
MOSFET marking smd
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.
|
Original
|
BSS138-G
OT-23
OT-23,
MIL-STD-750,
QW-BTR40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
DMG3415U
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
|
Original
|
DMN3112S
AEC-Q101
J-STD-020
MIL-STD-202,
|
PDF
|
MOSFET P channel SOT-23
Abstract: 20A SOT-23 SOT-23 MARKING 20A 01DA MOSFET P-Channel sot-23 ST2301DS ST2301D 20A p MOSFET MARKING TR SOT23-3 P MOSFET mosfet low vgs sot-23
Text: ST2301D P Channel Enhancement Mode MOSFET -2.0A DESCRIPTION The ST2301D is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
|
Original
|
ST2301D
ST2301D
OT-23
-20V/-2
180m-ohm
-20V/-1
360m-ohm
MOSFET P channel SOT-23
20A SOT-23
SOT-23 MARKING 20A
01DA
MOSFET P-Channel sot-23
ST2301DS
20A p MOSFET
MARKING TR SOT23-3 P MOSFET
mosfet low vgs sot-23
|
PDF
|
marking 31A sot-23
Abstract: SOT-23 MARKING 20A sot-23 MOSFET Marking code 6A ST2302D Power MOSFET N-Channel sot-23 N mosfet sot-23 MOSFET N SOT-23 MARKING CODE 16 transistor sot23 sot23 marking 6A diode sot-23 MARKING CODE NC
Text: ST2302D N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION The ST2302D is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
|
Original
|
ST2302D
ST2302D
OT-23
260m-ohm
450m-ohm
marking 31A sot-23
SOT-23 MARKING 20A
sot-23 MOSFET Marking code 6A
Power MOSFET N-Channel sot-23
N mosfet sot-23
MOSFET N SOT-23
MARKING CODE 16 transistor sot23
sot23 marking 6A diode
sot-23 MARKING CODE NC
|
PDF
|
BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
|
Original
|
24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
|
PDF
|
|
|
BSS127S
Abstract: K29 mosfet BSS127 K28 SOT23
Text: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage
|
Original
|
BSS127
DS35476
BSS127S
K29 mosfet
BSS127
K28 SOT23
|
PDF
|
DIODES K29
Abstract: No abstract text available
Text: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C • Low Input Capacitance High BVDss rating for power application 600V 160Ω @ VGS = 10V SC59 SOT23 • 70mA • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
|
Original
|
BSS127
AEC-Q101
DS35476
DIODES K29
|
PDF
|
payi
Abstract: TPS1110
Text: TPS2816, TPS2817, TPS2818, TPS2819, TPS2828, TPS2829, SINGLEĆCHANNEL HIGHĆSPEED MOSFET DRIVER SLVS160C – FEBRUARY 1997 – REVISED OCTOBER 2002 D Low-Cost Single-Channel High-Speed D D D D D D D TPS2816, TPS2817 TPS2818, TPS2819 DBV PACKAGE TOP VIEW
|
Original
|
TPS2816,
TPS2817,
TPS2818,
TPS2819,
TPS2828,
TPS2829,
SLVS160C
TPS2817
payi
TPS1110
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it
|
Original
|
BSS84
-130mA
AEC-Q101
DS30149
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices
|
Original
|
ST2300SRG
ST2300SRG
OT-23
|
PDF
|
2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
|
Original
|
24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it
|
Original
|
BSS84
-130mA
AEC-Q101
DS30149
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification DMG3420U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary 20V • Low On-Resistance RDS ON max ID max TA = +25°C • Low Input Capacitance • Fast Switching Speed 21mΩ @ VGS = 10V 6.5A • Low Input/Output Leakage 25mΩ @ VGS = 4.5V
|
Original
|
DMG3420U
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it
|
Original
|
BSS84
-130mA
AEC-Q101
DS30149
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25°C • Low On-Resistance Low Gate Threshold Voltage 122m @ VGS = -10V -2.7A Low Input Capacitance 190m @ VGS = -4.5V -2.0A Fast Switching Speed
|
Original
|
DMP3160L
AEC-Q101
-10V/-4
|
PDF
|
