complementary npn-pnp
Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES
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ZXTD4591E6
OT23-6
OT23-6
ZXTD4591E6TA
complementary npn-pnp
dual npn 500ma
NPN SOT23-6
Surface mount NPN/PNP complementary transistor
transistor Ic 1A datasheet NPN
ZXTD4591E6
ZXTD4591E6TA
ZXTD4591E6TC
4591
DSA003748
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Untitled
Abstract: No abstract text available
Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES
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ZXTD4591E6
OT23-6
OT23-6
ZXTD459Fax:
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PNP POWER TRANSISTOR SOT23
Abstract: FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6
Text: ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2006E6
OT23-6
OT23-6
-70mV
A/100mA
ZXTP2006E6TA
PNP POWER TRANSISTOR SOT23
FT-110
sot23 6 device Marking
SOT23-6
ZXTP2006E6
ZXTP2006E6TA
ZXTP2006E6TC
52 sot23-6
PNP SOT23-6
.FT SOT23-6
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Untitled
Abstract: No abstract text available
Text: ZXTP2006E6 20V PNP LOW SAT M EDIUM POWER TRANSISTOR IN SOT23-6 SUM M ARY BV CEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packag ed i n t h e SOT23-6 o u t l i n e t h i s n ew l o w saturation 20V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTP2006E6
OT23-6
OT23-6
A/100m
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ZS20
Abstract: ZS20 SOT23 MARKING T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC
Text: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6
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ZHCS2000
OT23-6
ZHCS2000TA
ZHCS2000TC
ZS20
ZS20 SOT23 MARKING
T2 MARKING SOT23-6
ZHCS2000
ZHCS2000TA
ZHCS2000TC
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T1 SOT23-6
Abstract: T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC marking e1 diode
Text: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6
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ZHCS2000
OT23-6
ZHCS2000TA
ZHCS2000TC
T1 SOT23-6
T2 MARKING SOT23-6
ZHCS2000
ZHCS2000TA
ZHCS2000TC
marking e1 diode
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ZHCS2000
Abstract: Schottky Diode 40V 2A ZHCS2000TA ZHCS2000TC DSA003728
Text: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6
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ZHCS2000
OT23-6
ZHCS2000TA
ZHCS2000TC
ZHCS2000
Schottky Diode 40V 2A
ZHCS2000TA
ZHCS2000TC
DSA003728
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ZHCS2000
Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC LL-20 DIODE SCHOTTKY 40V 500MA marking ll20
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
ZHCS2000
ZLLS2000
ZLLS2000TA
ZLLS2000TC
LL-20
DIODE SCHOTTKY 40V 500MA
marking ll20
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4420 Transistor
Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
transistor b 622
pnp transistor d 640
Schottky Diode 40V 5A
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
0118 transistor
High voltage fast switching power transistor pnp
DSA003748
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Schottky Diode 40V 2A
Abstract: marking ma sot23-6 ZHCS2000 320 sot236 ZLLS1000TA ZLLS1000TC ZLLS2000 marking L10
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
Schottky Diode 40V 2A
marking ma sot23-6
ZHCS2000
320 sot236
ZLLS1000TA
ZLLS1000TC
ZLLS2000
marking L10
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DIODES 11W
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve
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ZXTC2063E6
OT23-6,
OT23-6
ZXTC20:
D-81541
DIODES 11W
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ZHCS2000
Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC DIODE SCHOTTKY 40V 500MA 2222 diode
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
ZHCS2000
ZLLS2000
ZLLS2000TA
ZLLS2000TC
DIODE SCHOTTKY 40V 500MA
2222 diode
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TS16949
Abstract: ZHCS2000 ZLLS2000 ZLLS2000TA ZLLS2000TC schottky diode high voltage
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
Schot6100
TS16949
ZHCS2000
ZLLS2000
ZLLS2000TA
ZLLS2000TC
schottky diode high voltage
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4420 Transistor
Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
Schottky Diode 40V 5A
Schottky diode Die IR
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
transistor MV sot23
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TS16949
Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
Text: ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP
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ZXTC2063E6
OT23-6,
OT23-6
ZXTC2063E6TA
D-81541
TS16949
ZXTC2063E6
ZXTC2063E6TA
SOT23-6 MARKING 57
NPN SOT23-6
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T2 MARKING SOT23-6
Abstract: marking ma sot23-6 PNP POWER TRANSISTOR SOT23
Text: ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in
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OT23-6
-70mV
A/100mA
T2 MARKING SOT23-6
marking ma sot23-6
PNP POWER TRANSISTOR SOT23
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Untitled
Abstract: No abstract text available
Text: ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BV CEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in
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OT23-6
-70mV
A/100mA
W24250
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d619
Abstract: sot23-6 package marking d619 transistor d619 data ZUMT619 ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC
Text: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.
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ZXTD09N50DE6
ZUMT619
OT23-6
OT23-6
ZXTD09N50DE6TA
ZXTD09N50D:
d619
sot23-6 package marking d619
transistor d619 data
ZXTD09N50DE6
ZXTD09N50DE6TA
ZXTD09N50DE6TC
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ZXGD3001E6
Abstract: ZXGD3001 ZXGD3001E6TA design ideas igbt display plasma TS16949 ZETEX GATE DRIVER
Text: ZXGD3001E6 9A peak Gate driver in SOT23-6 General description The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation
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ZXGD3001E6
OT23-6
ZXGD3001E6
D-81541
ZXGD3001
ZXGD3001E6TA
design ideas
igbt display plasma
TS16949
ZETEX GATE DRIVER
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ZXGD3003E6
Abstract: ZXGD3003 ZXGD3003E6TA ZETEX GATE DRIVER design ideas igbt display plasma sot23 6 device Marking TS16949
Text: ZXGD3003E6 5A peak gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation
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ZXGD3003E6
OT23-6
ZXGD3003E6
D-81541
ZXGD3003
ZXGD3003E6TA
ZETEX GATE DRIVER
design ideas
igbt display plasma
sot23 6 device Marking
TS16949
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ZXGD3002E6
Abstract: ZXGD3002 ZETEX GATE DRIVER ZXGD3002E6TA MOSFET 4446 320 sot236 design ideas igbt display plasma marking E1 sot236 TS16949
Text: ZXGD3002E6 9A peak Gate driver in SOT23-6 General description The ZXGD3002E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 20V. With typical propagation
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ZXGD3002E6
OT23-6
ZXGD3002E6
D-81541
ZXGD3002
ZETEX GATE DRIVER
ZXGD3002E6TA
MOSFET 4446
320 sot236
design ideas
igbt display plasma
marking E1 sot236
TS16949
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Untitled
Abstract: No abstract text available
Text: ZXGD3003E6 5A peak gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation
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ZXGD3003E6
OT23-6
ZXGD3003E6
D-81541
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ZXTC2045E6TC
Abstract: No abstract text available
Text: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 • B2 B1 Applications C2 MOSFET and IGBT gate driving E1 E2 Ordering information
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ZXTC2045E6
OT23-6
OT236
ZXTC2045E6TA
ZXTC2045E6TC
ZXTC2045E6TC
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Untitled
Abstract: No abstract text available
Text: ZXGD3004E6 8A peak gate driver in SOT23-6 General description The ZXGD3004E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 8A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay
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ZXGD3004E6
OT23-6
ZXGD3004E6
D-81541
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