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    SOT23-6 PACKAGE MARKING AB Search Results

    SOT23-6 PACKAGE MARKING AB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    SOT23-6 PACKAGE MARKING AB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking PA SOT23-6

    Abstract: sot23-6 package marking PA
    Text: DN3 iode Termination Network / ESD Suppressor Schematic: 6 Package SOT23-6 4 . 1 3 Marking “ DN3 “ o Absolute Maximum Ratings: ( Ta = 25 C ) Symbol Parameter TOP Operating temperature VS Supply voltage (Vp ~ Vn) IF Continuous forward current * PO Total power


    Original     		PDF OT23-6) marking PA SOT23-6 sot23-6 package marking PA

    Untitled

    Abstract: No abstract text available
    Text: Diode Network / ESD Suppressor CDA3S06G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and


    Original     		PDF CDA3S06G OT23-6) MDS0903002A

    Comchip Technology

    Abstract: CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16
    Text: Diode Network / ESD Suppressor CDA3S06-G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand


    Original     		PDF CDA3S06-G OT23-6) MDS0903002A Comchip Technology CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16

    electronic schematic

    Abstract: No abstract text available
    Text: Diode Network / ESD Suppressor COMCHIP www.comchiptech.com CDA3S06L Voltage: 8 Volts Current: 50 mA Package SOT23-6 Feature Marking “ CDA3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and


    Original     		PDF CDA3S06L OT23-6) MDS0903002A electronic schematic

    J201 Replacement

    Abstract: j201 marking code vishay SILICONIX sot-23 vishay siliconix code marking to-92 siliconix j201 Marking 02 SOT23 MARKING PA SOT-23 LS SOT23 sot-23 MARKING 3l sot23 DEVICE marking AV
    Text: J/SST201 SERIES HIGH GAIN N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES LOW CUTOFF VOLTAGE VGS off ≤ 1.5V HIGH GAIN AV = 80 V/V 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) J SERIES Maximum Temperatures


    Original     		PDF J/SST201 350mW OT-23 SST201 SST201 J201 Replacement j201 marking code vishay SILICONIX sot-23 vishay siliconix code marking to-92 siliconix j201 Marking 02 SOT23 MARKING PA SOT-23 LS SOT23 sot-23 MARKING 3l sot23 DEVICE marking AV

    video amplifier SOT23-6 marking a10

    Abstract: No abstract text available
    Text: TL343 SINGLE LOWĆPOWER OPERATIONAL AMPLIFIER SLOS250G − JUNE 1999 − REVISED JANUARY 2005 D Wide Range of Supply Voltages, Single D D D D D DBV PACKAGE TOP VIEW Supply 3 V to 30 V, or Dual Supplies Class AB Output Stage True Differential-Input Stage


    Original     		PDF TL343 SLOS250G TL343 video amplifier SOT23-6 marking a10

    SMV1430-079LF

    Abstract: SMV1430 ls 377 SMV1405-SMV1430 smv1430-040
    Text: DATA SHEET SMV1405-SMV1430 Series: Plastic Packaged Abrupt Junction Tuning Varactors Applications • High-Q resonators in wireless system VCOs • High volume commercial systems Features • High Q • Low series resistance for low phase noise • Packages rated MSL1, 260 °C per JEDEC J-STD-020


    Original     		PDF SMV1405-SMV1430 J-STD-020 200068N SMV1430-079LF SMV1430 ls 377 smv1430-040

    Untitled

    Abstract: No abstract text available
    Text: TL343 SINGLE LOWĆPOWER OPERATIONAL AMPLIFIER SLOS250G − JUNE 1999 − REVISED JANUARY 2005 D Wide Range of Supply Voltages, Single D D D D D DBV PACKAGE TOP VIEW Supply 3 V to 30 V, or Dual Supplies Class AB Output Stage True Differential-Input Stage


    Original     		PDF TL343 SLOS250G

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SMV1405-SMV1430 Series: Plastic Packaged Abrupt Junction Tuning Varactors Applications • High-Q resonators in wireless system VCOs • High volume commercial systems Features • High Q • Low series resistance for low phase noise • Packages rated MSL1, 260 °C per JEDEC J-STD-020


    Original     		PDF SMV1405-SMV1430 J-STD-020 200068O

    8FC SOT23

    Abstract: TRANSISTOR 8FB sot23 marking 8fc marking 8FC sot23 marking 8fB Transistor 8fc transistor MARKING my BC81740MTF 8FC+SOT23
    Text: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector


    Original     		PDF BC817/BC818 BC817/BC818 BC807/ BC808 OT-23 BC817 BC818 BC817 8FC SOT23 TRANSISTOR 8FB sot23 marking 8fc marking 8FC sot23 marking 8fB Transistor 8fc transistor MARKING my BC81740MTF 8FC+SOT23

    c1y transistor

    Abstract: MARKING c1y C1G SOT-23 transistor c1y C1G Transistor MARKING npn C1Y ksc1623y KSC1623
    Text: KSC1623 KSC1623 Low Frequency Amplifier & High Frequency OSC. 3 • Complement to KSA812 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage


    Original     		PDF KSC1623 KSA812 OT-23 KSC1623 OT-23-3 KSC1623GMTF KSC1623LMTF KSC1623OMTF c1y transistor MARKING c1y C1G SOT-23 transistor c1y C1G Transistor MARKING npn C1Y ksc1623y

    Analog devices TOP marking Information

    Abstract: marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23
    Text: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO


    Original     		PDF BCW61A/B/C/D OT-23 KST5086 OT-23 BCW61AMTF Analog devices TOP marking Information marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23

    smd zG sot 23

    Abstract: ZG SOT-23 smd marking YB smd marking ZG SOT-23 MARKING ZX sot-23 smd tr yc sot-23 marking zj ZH SOT-23 smd marking ZH smd marking Yd
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILIICON PLANAR ZENER DIODES CZMK3V3-39V SOT-23 Formed SMD Package 3 3 Pin Configuration 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 2 1 Dual Zener Diodes, Common Cathode ABSOLUTE MAXIMUM RATINGS Per Diode Ta=25°C Unless Specified Otherwise


    Original     		PDF ISO/TS16949 CZMK3V3-39V OT-23 43ers C-120 39VRev250102E smd zG sot 23 ZG SOT-23 smd marking YB smd marking ZG SOT-23 MARKING ZX sot-23 smd tr yc sot-23 marking zj ZH SOT-23 smd marking ZH smd marking Yd

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8865-HF-3 300mA Low Drop-out Linear Regulator Features Description Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current of about 30µA Output Voltage Accuracy of ±2% for 1.2V~3.3V


    Original     		PDF APE8865-HF-3 300mA 250mV 300mA SC-70-4, SC-70-5, OT-23 OT-23-5 APE8865-HF-3

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SMP1330 Series: Plastic Packaged Limiter Diodes Features Low distortion design Limiter performance to 2 GHz and higher ● Low insertion loss ● Low cost plastic package ● Available in tape and reel packaging ● ● Absolute Maximum Ratings


    Original     		PDF SMP1330

    DIODE smd marking A4

    Abstract: smd diode A4 smd diode code A4 DIODE package sot23 smd marking A4 BAV70 smd diode marking code a2
    Text: СПЕЦИФИКАЦИЯ components Absolute Maximum Rating: Ta=25°C Features • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 450 mA


    Original     		PDF BAV70 DIODE smd marking A4 smd diode A4 smd diode code A4 DIODE package sot23 smd marking A4 BAV70 smd diode marking code a2

    marking code TS

    Abstract: BAR64-05
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


    Original     		PDF BAR64. BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W marking code TS

    Marking code 016w

    Abstract: marking 016w 016W
    Text: Advanced Power Electronics Corp. APE8865 300mA LOW DROPOUT LINEAR REGULATOR FEATURES DESCRIPTIOON Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current at about 30uA ±2% Output Voltage Accuracy for 1.2V~3.3V Needs Only 1µF Capacitor for Stability


    Original     		PDF 250mV 300mA SC-70-4LSC-70-5LSOT-23 OT-23-5L APE8865 APE8865 Marking code 016w marking 016w 016W

    02LRH

    Abstract: BAR64-03W bar6403w e6327
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


    Original     		PDF BAR64. BAR64-02L BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 02LRH BAR64-03W bar6403w e6327

    8805r

    Abstract: 8805 VOLTAGE REGULATOR 8805r 33 MARKING 8805 APE8805 KR SOT MARKING
    Text: Advanced Power Electronics Corp. APE8805 600mA LOW DROPOUT LINEAR REGULATOR FEATURES ● Low Dropout Voltage of 600mV at 600mA ● Guaranteed 600mA Output Current ● Very Low Quiescent Current at about 30uA ● Max. ± 2%Output Accuracy ● Needs Only 1µF Capacitor for Stability


    Original     		PDF APE8805 600mA 600mV 600mA APE8805 600mV. 8805r 8805 VOLTAGE REGULATOR 8805r 33 MARKING 8805 KR SOT MARKING

    ESDOP2RF-02LRH E6327

    Abstract: No abstract text available
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


    Original     		PDF BAR64. BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W ESDOP2RF-02LRH E6327

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SMV1405 to SMV1430 Series: Plastic Packaged Abrupt Junction Tuning Varactors Applications • High-Q resonators in wireless system VCOs  High volume commercial systems Features  High Q  Low series resistance for low phase noise  Packages rated MSL1, 260 °C per JEDEC J-STD-020


    Original     		PDF SMV1405 SMV1430 J-STD-020 SQ04-0074. 200068Q

    Untitled

    Abstract: No abstract text available
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


    Original     		PDF BAR64. BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W

    BAR64-02LRH

    Abstract: BAR64-02V BAR64 BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


    Original     		PDF BAR64. BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-02LRH BAR64-02V BAR64 BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W