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    SOT89 11 Search Results

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    MARKING N93

    Abstract: 4446 FCX493 FCX593 fcx493ta
    Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.


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    PDF FCX493 FCX593 FCX493TA FCX493TC MAX00 MARKING N93 4446 FCX493 FCX593 fcx493ta

    Untitled

    Abstract: No abstract text available
    Text: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW78D  BAW79D !  ! Type Package Configuration Marking BAW78D BAW79D SOT89 SOT89 single


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    PDF BAW78. /BAW79. BAW78D BAW79D

    Aeroflex Microelectronic Solutions

    Abstract: rf sot89 50 MMA500
    Text: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.


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    PDF MMA500 MMA500 A17021 Aeroflex Microelectronic Solutions rf sot89 50

    Untitled

    Abstract: No abstract text available
    Text: MMA704X DC to 2.5 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA704X is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • •


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    PDF MMA704X

    Diode markings 79a

    Abstract: BAW79D BAW78 BAW78D
    Text: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW78D  BAW79D !  ! Type Package Configuration Marking BAW78D BAW79D SOT89 SOT89 single


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    PDF BAW78. /BAW79. BAW78D BAW79D Diode markings 79a BAW79D BAW78 BAW78D

    SOT89 MARKING CODE 43

    Abstract: No abstract text available
    Text: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage BAW78D  BAW79D !  Type BAW78D BAW79D ! Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified


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    PDF BAW78. /BAW79. BAW78D BAW79D BAW78D 50/60Hz, BAW78D, BAW79D, SOT89 MARKING CODE 43

    Untitled

    Abstract: No abstract text available
    Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.


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    PDF FCX493 FCX593 FCX493TA FCX493TC

    Untitled

    Abstract: No abstract text available
    Text: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound


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    PDF BCX5316Q J-STD-020 MIL-STD-202 -500mV DS37033

    Untitled

    Abstract: No abstract text available
    Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current


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    PDF BCX51/ -500mV BCX54, AEC-Q101 DS35368

    MMA710

    Abstract: jc-70
    Text: MMA710 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA710 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 4 GHz Broadband Gain Block


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    PDF MMA71 MMA710 jc-70

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state


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    PDF ZXTP2008Z ZX5T949Z

    AM/mcl d01 94V0

    Abstract: No abstract text available
    Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current


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    PDF BCX51/ -500mV J-STD-020 BCX54, MIL-STD-202 DS35368 AM/mcl d01 94V0

    a1701

    Abstract: MMA710
    Text: MMA710 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA710 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 4 GHz Broadband Gain Block


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    PDF MMA71 MMA710 A17017 a1701

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP


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    PDF ZXTP19100CZ -100V -130mV ZXTN19100CZ ZXTP19100CZTA D-81541

    MMA710

    Abstract: No abstract text available
    Text: MMA710X DC to 3 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA710X is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 3 GHz Broadband Gain Block


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    PDF MMA710X A17018 MMA710

    ZXTN19020DZ

    Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
    Text: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor


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    PDF ZXTP19020DZ -47mV ZXTN19020DZ D-81541 ZXTN19020DZ ZXTP19020DZ ZXTP19020DZTA TS16949

    MMA704

    Abstract: rf sot89
    Text: MMA704 DC to 3.7 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA704 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 3.7 GHz Broadband Gain Block


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    PDF MMA704 MMA704 rf sot89

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP


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    PDF ZXTP25020DZ -65mV ZXTN25020DZ D-81541

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V  Case: SOT89  IC = -5.5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.


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    PDF J-STD-020 -60mV DS33419

    Untitled

    Abstract: No abstract text available
    Text: MMA710X DC to 3 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA710X is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 3 GHz Broadband Gain Block


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    PDF MMA71 MMA710X

    TS16949

    Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
    Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


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    PDF ZXTN25100DZ 100mV ZXTP25100CZ D-81541 TS16949 ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ

    ZXTN2007Z

    Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
    Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    PDF ZXTN2007Z ZXTN2007ZTA TAP26100 ZXTN2007Z ZXTN2007ZTA ZXTN MARKING 7A SOT89

    ZXTP2014Z

    Abstract: ZXTP2014ZTA
    Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


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    PDF ZXTP2014Z -140V ZXTP2014ZTA ZXTP2014Z ZXTP2014ZTA

    TK10485M

    Abstract: TK16203U TK14521 TK16202U MFP-12 tk14521m TK10489M TK10485 TK10492 MFP36
    Text: 27 INTEGRATED CIRCUITS TOKO U. Kl M ï f i ICs for Communications Equipment üimfflic Surface Mounting Taping 9 .5 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • • FM IF system IC for use In cordless phones, amateur radios up to


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    PDF TK16201U 1000MHz 270MHz TK10668Q TK10485M TK16203U TK14521 TK16202U MFP-12 tk14521m TK10489M TK10485 TK10492 MFP36