sot89 stencil
Abstract: sot89 land pattern Loctite 218 RG200 substrate 5989-0810EN LOCTITE-96sc Getek LOCTITE 384 RG200 laser gun
Text: SOT89 Package Application Note 5051 Introduction PCB Land Pattern and Stencil Design Avago Technologies SOT89 is a 3 I/O pins Figure 1 package platform designed to offer excellent heat dissipation and wide RF frequency response. The SOT89 package itself is lead free with a dimension of 4.1 mm
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5989-0810EN
sot89 stencil
sot89 land pattern
Loctite 218
RG200 substrate
LOCTITE-96sc
Getek
LOCTITE 384
RG200
laser gun
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state
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ZXTP2008Z
ZX5T949Z
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Untitled
Abstract: No abstract text available
Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP
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ZXTP25020DZ
-65mV
ZXTN25020DZ
D-81541
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V Case: SOT89 IC = -5.5A High Continuous Current Case Material: Molded Plastic. “Green” Molding Compound.
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J-STD-020
-60mV
DS33419
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ZXTN2007Z
Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2007Z
ZXTN2007ZTA
TAP26100
ZXTN2007Z
ZXTN2007ZTA
ZXTN
MARKING 7A SOT89
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Untitled
Abstract: No abstract text available
Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management
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FCX555
-180V
FCX555TA
FCX555
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TS16949
Abstract: ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA
Text: ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC cont = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP
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ZXTP25012EZ
-70mV
ZXTN25012EZ
D-81541
TS16949
ZXTN25012EZ
ZXTP25012EZ
ZXTP25012EZTA
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TS16949
Abstract: ZXTN25020DZ ZXTP25020DZ ZXTP25020DZTA SOT89 transistor marking 5A
Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP
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ZXTP25020DZ
-65mV
ZXTN25020DZ
D-81541
TS16949
ZXTN25020DZ
ZXTP25020DZ
ZXTP25020DZTA
SOT89 transistor marking 5A
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SOT89 transistor marking 851
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V Case: SOT89 IC = 5A High Continuous Current Case Material: Molded Plastic. “Green” Molding Compound.
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ZXTN2010Z
J-STD-020
ZXTP2012Z
MIL-STD-202,
DS33661
SOT89 transistor marking 851
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ZX5T849Z
Abstract: ZX5T849ZTA MARKING 7A SOT89
Text: ZX5T849Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T849Z
ZX5T849ZTA
ZX5T849Z
ZX5T849ZTA
MARKING 7A SOT89
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ZXTN19020DZTA
Abstract: TS16949 ZXTN19020DZ ZXTP19020DZ
Text: ZXTN19020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 7.5A VCE(sat) < 35mV @ 1A RCE(sat) = 21m⍀ PD = 2.4W Complementary part number ZXTP19020DZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN19020DZ
ZXTP19020DZ
D-81541
ZXTN19020DZTA
TS16949
ZXTN19020DZ
ZXTP19020DZ
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TS16949
Abstract: ZXTN25040DZ ZXTN25040DZTA ZXTP25040DZ ZXTN
Text: ZXTN25040DZ 40V, SOT89, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 2.4W Complementary part number ZXTP25040DZ Description C Packaged in the SOT89 outline this new low saturation 40V NPN
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ZXTN25040DZ
ZXTP25040DZ
D-81541
TS16949
ZXTN25040DZ
ZXTN25040DZTA
ZXTP25040DZ
ZXTN
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Untitled
Abstract: No abstract text available
Text: ZXTN25020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 6A VCE(sat) < 48mV @ 1A RCE(sat) = 30m⍀ PD = 2.4W Complementary part number ZXTP25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V NPN
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ZXTN25020DZ
ZXTP25020DZ
D-81541
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Untitled
Abstract: No abstract text available
Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management
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FCX555
-180V
FCX555TA
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transistor marking 6A
Abstract: ZXTN2010Z ZXTN2010ZTA
Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various
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ZXTN2010Z
transistor marking 6A
ZXTN2010Z
ZXTN2010ZTA
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"PNP Transistor"
Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA
Text: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZX5T951Z
"PNP Transistor"
design ideas
TS16949
ZX5T951Z
ZX5T951ZTA
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SOT89 transistor marking 5A
Abstract: ZX5T951Z ZX5T951ZTA 5A SOT89
Text: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZX5T951Z
SOT89 transistor marking 5A
ZX5T951Z
ZX5T951ZTA
5A SOT89
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Untitled
Abstract: No abstract text available
Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various
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ZXTN2010Z
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FCX1053A 75V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 75V IC = 3A high Continuous Current ICM = 10A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound
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FCX1053A
J-STD-020
MIL-STD-202,
DS33078
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marking 951
Abstract: SOT89 transistor marking 5A ZXTP2012Z ZXTP2012ZTA
Text: ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2012Z
Powe26100
marking 951
SOT89 transistor marking 5A
ZXTP2012Z
ZXTP2012ZTA
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FCX555
Abstract: FCX555TA 100MHZ TS-4020
Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management
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FCX555
-180V
FCX555TA
FCX555
FCX555TA
100MHZ
TS-4020
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FCX1053A
Abstract: FCX1053ATA 78m marking
Text: FCX1053A SOT89 NPN medium power transistor Summary BVCEO = 75V RCE sat = 78m⍀ IC = 3A Description This medium power NPN transistor, offered in the SOT89 package provides high current and low saturation voltage making it ideal for use in various driving and power management applications.
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FCX1053A
FCX1053A
FCX1053ATA
78m marking
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Untitled
Abstract: No abstract text available
Text: ZXTN19020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 7.5A VCE(sat) < 35mV @ 1A RCE(sat) = 21m⍀ PD = 2.4W Complementary part number ZXTP19020DZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN19020DZ
ZXTP19020DZ
D-81541
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ZXTN2007Z
Abstract: ZXTN2007ZTA sot89 bv
Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2007Z
ZXTN2007ZTA
ZXTN2007Z
ZXTN2007ZTA
sot89 bv
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