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    SOT89 NPN MARKING CODE AM Search Results

    SOT89 NPN MARKING CODE AM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    SOT89 NPN MARKING CODE AM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT89 transistor marking

    Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
    Text: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications


    Original     		PDF OT-563 OT-523 OT-23 OT-89 OT-223 OT-228 600mA 500mA CMLT5551HC OT-563) SOT89 transistor marking SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter

    MARKING 67 SOT89

    Abstract: transistor 5551 sot-89 marking code transistor sot code amplifier marking code D amplifier marking code a transistor sot sot-223 code marking 5551 datasheet SOT89 MARKING CODE
    Text: PRODUCT announcement Higher Current, High Voltage NPN Transistors SOT-228 SOT-223 SOT-89 SOT-23 SOT-563 Dual Single Single Single Single Sample Devices features • Higher current than standard 5551 available 1.0 Amp vs. standard current 600mA • Single and Dual configurations


    Original     		PDF OT-228 OT-223 OT-89 OT-23 OT-563 600mA) 5551HC 600mA MARKING 67 SOT89 transistor 5551 sot-89 marking code transistor sot code amplifier marking code D amplifier marking code a transistor sot sot-223 code marking 5551 datasheet SOT89 MARKING CODE

    MARKING CODE B3 sot-89

    Abstract: MY sot-89 NPN medium power transistor in a SOT package
    Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking


    Original     		PDF KSC2982 KSC2982 OT-89 KSC2982ATF KSC2982BTF KSC2982CTF KSC2982DTF MARKING CODE B3 sot-89 MY sot-89 NPN medium power transistor in a SOT package

    diode sot-89 marking code

    Abstract: SOT-89 sot-89 marking code CXT5401E CXT5551E npn 120v 10a transistor
    Text: Central CXT5551E TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown


    Original     		PDF CXT5551E OT-89 100mV CXT5401E 150mA 100MHz diode sot-89 marking code SOT-89 sot-89 marking code CXT5401E CXT5551E npn 120v 10a transistor

    Untitled

    Abstract: No abstract text available
    Text: CXT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications


    Original     		PDF CXT5551E CXT5551E OT-89 100mV CXT5401E 150mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: CXT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications


    Original     		PDF CXT5551E OT-89 100mV CXT5401E 150mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR  DESCRIPTION * Audio frequency power amplifier * Medium speed switching  ORDERING INFORMATION Ordering Number Lead Free Plating Halogen-Free 2SD1616L-x-AB3-R


    Original     		PDF 2SD1616/A 2SD1616L-x-AB3-R 2SD1616G-x-AB3-R 2SD1616L-x-G03-K 2SD1616G-x-G03-K 2SD1616L-x-T92-B 2SD1616G-x-T92-B 2SD1616L-x-T92-K 2SD1616G-x-T92-K 2SD1616L-x-T9S-K

    SOT89 MARKING CODE B2

    Abstract: KSC2881 KSA1201
    Text: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y


    Original     		PDF KSC2881 120MHz KSA1201 OT-89 KSC2881 SOT89 MARKING CODE B2 KSA1201

    Untitled

    Abstract: No abstract text available
    Text: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y


    Original     		PDF KSC2881 120MHz KSA1201 OT-89 KSC2881

    FJC1308

    Abstract: FJC1963
    Text: FJC1963 NPN Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1308 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 9 6 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		PDF FJC1963 FJC1308 OT-89 FJC1963 FJC1308

    transistor B3 OF

    Abstract: B3 transistor KSC2883 KSA1203 B3 marking transistor
    Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		PDF KSC2883 KSA1203 OT-89 KSC2883 transistor B3 OF B3 transistor KSA1203 B3 marking transistor

    KSC2982

    Abstract: No abstract text available
    Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking


    Original     		PDF KSC2982 OT-89 KSC2982

    Untitled

    Abstract: No abstract text available
    Text: KSC2883 NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		PDF KSC2883 KSC2883 KSA1203 OT-89

    Untitled

    Abstract: No abstract text available
    Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		PDF KSC2883 KSA1203 OT-89 KSC2883

    CXT5551

    Abstract: No abstract text available
    Text: CXT5551 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier


    Original     		PDF CXT5551 CXT5551 OT-89 100MHz 23-February

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN medium power transistors BCX54; BCX55; BCX56 FEATURES PINNING • High current max. 1 A • Low voltage (max. 80 V). PIN APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base Driver stages of audio and video amplifiers.


    OCR Scan     		PDF BCX54; BCX55; BCX56 BCX51, BCX52 BCX53. BCX54 BCX55-16 BCX54-10

    "MARKING CODE BM"

    Abstract: Marking BH SOT89
    Text: Philips Semiconductors Product specification NPN medium power transistors BCX54; BCX55; BCX56 FEATURES PINNING • High current max. I A • Low voltage (max. 80 V). PIN APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Driver stages of audio and video amplifiers.


    OCR Scan     		PDF BCX54; BCX55; BCX56 BCX51, BCX52 BCX53. BCX54 BCX54-10 BCX54-16 BCX55 "MARKING CODE BM" Marking BH SOT89

    marking CAC SOT89

    Abstract: MARKING 93 SOT89 sot89 marking 93 SOT89 transistor marking with lb 135 BC868 BC868-25 BC869 BL SOT89 SOT89 MARKING CODE B2 Thermal considerations for SOT89 in the General
    Text: Philips Semiconductors Product specification NPN medium power transistor BC868 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • General purpose switching and amplification


    OCR Scan     		PDF BC868 BC869. BC868-25 mam296 marking CAC SOT89 MARKING 93 SOT89 sot89 marking 93 SOT89 transistor marking with lb 135 BC869 BL SOT89 SOT89 MARKING CODE B2 Thermal considerations for SOT89 in the General

    SOT89 MARKING CODE B2

    Abstract: MARKING BL SOT89 Thermal considerations for SOT89 SOT89 Marking Code bl BL MARKING CODE SOT89 BL SOT89 SOT89 MARKING CODE 16 Thermal considerations for SOT89 in the General SOT89 MARKING CODE 26 BST16
    Text: Philips Semiconductors Product specification NPN high-voltage transistors BST39; BST40 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 350 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • General purpose switching and amplification.


    OCR Scan     		PDF BST39; BST40 BST15 BST16. BST39 BST40 MAM296 SOT89 MARKING CODE B2 MARKING BL SOT89 Thermal considerations for SOT89 SOT89 Marking Code bl BL MARKING CODE SOT89 BL SOT89 SOT89 MARKING CODE 16 Thermal considerations for SOT89 in the General SOT89 MARKING CODE 26 BST16

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistors BST39; BST40 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 350 V). 1 emitter 2 collector 3 base APPLICATIONS DESCRIPTION • General purpose switching and amplification.


    OCR Scan     		PDF BST15 BST16. BST39 BST40 BST39; BST40

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN medium power transistor BC868 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). 1 APPLICATIONS DESCRIPTION emitter 2 collector 3 base • General purpose switching and amplification


    OCR Scan     		PDF BC869. BC868 BC868-10 BC868-16 BC868-25 BC868 BC868-25

    PXT4401

    Abstract: PXT4403 marking P2x SOT89 MARKING CODE B2 p2x transistor
    Text: Philips Semiconductors Product specification NPN switching transistor PXT4401 FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Switching and linear amplification in industrial and


    OCR Scan     		PDF PXT4401 PXT4403. PXT4401 MAM296 MLB826 PXT4403 marking P2x SOT89 MARKING CODE B2 p2x transistor

    TRANSISTOR p1p

    Abstract: p1p transistor SOT89 MARKING CODE B2 transistor P1P 4 PXT2222A PXT2907A BL SOT89 MARKING BL SOT89
    Text: Philips Semiconductors Product specification NPN switching transistor PXT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base General purpose switching and linear amplification.


    OCR Scan     		PDF PXT2222A PXT2907A. PXT2222A MLB826 TRANSISTOR p1p p1p transistor SOT89 MARKING CODE B2 transistor P1P 4 PXT2907A BL SOT89 MARKING BL SOT89

    smd code marking v8 sot23

    Abstract: SMD MARKING CODE 101 SOT23-5 SMD sot23 marking E6 smd p8 sot23 marking codes n1 transistors sot-23 SMD sot23-5 marking E2 marking code 4k SMD sot23-5 SMD CODE E2 smd code marking v8 sot223 SOT89 smd marking 13
    Text: BROADBAND SMD TRANSISTORS DESCRIPTION • Philips Components broadband transistors are the result of leading-edge technology dedicated to expanding performance and selection in the wideband arena. The devices are ideal amplifiers for VHF, UHF, and microwave


    OCR Scan     		PDF OT-223 BFG135 BFG197 BFG198 BFQ17 BFQ18A BFQ19 BFQ67 BFQ149 BFR53 smd code marking v8 sot23 SMD MARKING CODE 101 SOT23-5 SMD sot23 marking E6 smd p8 sot23 marking codes n1 transistors sot-23 SMD sot23-5 marking E2 marking code 4k SMD sot23-5 SMD CODE E2 smd code marking v8 sot223 SOT89 smd marking 13