Untitled
Abstract: No abstract text available
Text: R8005ANJ Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source
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R8005ANJ
SC-83)
R1102A
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TO220FM-3
Abstract: No abstract text available
Text: ZDX050N50 Datasheet Nch 500V 5A Power MOSFET lOutline VDSS 500V RDS on (Max.) 1.5W ID 5A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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ZDX050N50
O-220FM
R1120A
TO220FM-3
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Untitled
Abstract: No abstract text available
Text: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R8005ANX
O-220FM
R1102A
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Untitled
Abstract: No abstract text available
Text: ZDX050N50 Nch 500V 5A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 1.5W ID 5A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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ZDX050N50
O-220FM
ZDX050N50
R1120A
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PBT GF-20
Abstract: Ul-498 E252394 LR-229352 E223801 5-20R 67200 99154 DP 804 C
Text: Datasheet AC Outlet DIN-Rail Mountable Receptacles DIN-rail receptacles, 5A, 15A and 20A power outlets, provide a convenient power source for portable computers or test devices for in-the-panel troubleshooting. They mount on standard 35mm DIN-rail. The terminations accept slotted or Phillips
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UL508A,
35mm/1
70mm/2
LR-229352,
E252394
6/11-LIT0901
PBT GF-20
Ul-498
E252394
LR-229352
E223801
5-20R
67200
99154
DP 804 C
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PDF
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Untitled
Abstract: No abstract text available
Text: WTC2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement
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WTC2306A
SC-59
SC-59
13-May-05
26-Nov-08
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2306a
Abstract: D26A sot-23 Marking DL WTC2306A
Text: WTC2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement
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WTC2306A
OT-23
OT-23
13-May-05
2306a
D26A
sot-23 Marking DL
WTC2306A
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irf830
Abstract: TO-220 Single power supply IRF830 APPLICATION irf830 datasheet power MOSFET IRF830 IRF830 equivalent
Text: IRF830 Features • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 500V Simple Drive Requirement ID = 5A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
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IRF830
IRF830
O-220
TO-220
Single
power supply IRF830 APPLICATION
irf830 datasheet
power MOSFET IRF830
IRF830 equivalent
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AP9912J
Abstract: No abstract text available
Text: AP9912H/J Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 20V RDS ON 85mΩ ID G 10A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
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AP9912H/J
O-252
AP9912J)
O-251
Par150
AP9912J
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Untitled
Abstract: No abstract text available
Text: SSM9936M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 D2 Lower gate charge D1 D1 Fast switching characteristics S1 30V R DS ON 50mΩ 5A ID G2 S2 SO-8 BV DSS G1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the
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SSM9936M/GM
SSM9936M
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SSM4953M
Abstract: No abstract text available
Text: SSM4953M P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 D2 Low on-resistance D1 D1 Fast switching BVDSS -30V RDS ON 53mΩ -5A ID G2 S2 SO-8 S1 G1 Description D2 D1 MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,
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SSM4953M
SSM4953M
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Untitled
Abstract: No abstract text available
Text: SSM9936GM Dual N-channel Enhancement-mode Power MOSFETs BVD2 Simple drive requirement D2 Lower gate charge D1 D1 Fast switching characteristics R I G2 S2 Pb-free; RoHS compliant. SO-8 S1 BVDSS 30V R DS ON 50mΩ ID 5A G1 DESCRIPTION Advanced Power MOSFETs from Silicon Standard provide the
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SSM9936GM
SSM9936GM
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AF9901M
Abstract: NMOS-2 LCD Monitor Inverter 2N AND 2P-CHANNEL ENHANCEMENT P2d MARKING CODE NMOS-1 N and P MOSFET
Text: AF9901M 2N and 2P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer
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AF9901M
AF9901M
NMOS-2
LCD Monitor Inverter
2N AND 2P-CHANNEL ENHANCEMENT
P2d MARKING CODE
NMOS-1
N and P MOSFET
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ap4532gm
Abstract: ap4532 AP45
Text: AP4532GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching N-CH BVDSS D2 30V RDS ON D2 D1 D1 50mΩ ID G2 S2 SO-8 S1 5A P-CH BVDSS G1
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AP4532GM
ap4532gm
ap4532
AP45
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SSM4532M
Abstract: No abstract text available
Text: SSM4532M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS N-ch Simple drive requirement BV D2 Low on-resistance G2 S2 SO-8 50mΩ R DS ON D2 D1 D1 Fast switching +30V DSS S1 P-ch G1 Description ID +5A BV DSS -30V RDS(ON) 70mΩ ID MOSFETs from Silicon Standard Corp. provide the
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SSM4532M
SSM4532M
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PDF
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Untitled
Abstract: No abstract text available
Text: AP4532GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D2 D2 Low On-resistance 30V RDS ON D1 D1 50m ID Fast Switching Characteristic RoHS Compliant & Halogen-Free
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AP4532GM-HF
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Untitled
Abstract: No abstract text available
Text: R8010ANX Nch 800V 10A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 0.56W ID 10A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R8010ANX
O-220FM
R1102A
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AP4953M
Abstract: No abstract text available
Text: AP4953M Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 ▼ Low On-resistance ▼ Fast Switching D2 D1 D1 BVDSS -30V RDS ON 53mΩ ID -5A G2 S2 SO-8 S1 G1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the
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AP4953M
AP4953M
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AP4532GM
Abstract: No abstract text available
Text: AP4532GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Low On-resistance 30V RDS ON D1 D1 ▼ Fast Switching Characteristic 50mΩ ID S2 G1 SO-8 G2 5A
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AP4532GM
AP4532GM
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ap4532
Abstract: ap45
Text: AP4532GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Low On-resistance 30V RDS ON D1 D1 ▼ Fast Switching Characteristic 50mΩ ID ▼ RoHS Compliant & Halogen-Free
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AP4532GM-HF
Symbo10
ap4532
ap45
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AP9930M
Abstract: No abstract text available
Text: AP9930M Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G N1S/N2S LCD Monitor Inverter N1D/P1D 6.3A
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AP9930M
100ms
135/W
AP9930M
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d237m
Abstract: ap4936m
Text: AP4936M Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Fast Switching BVDSS 25V RDS ON 37mΩ ID 5.8A G2 S2 SO-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the
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AP4936M
d237m
ap4936m
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PDF
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Untitled
Abstract: No abstract text available
Text: AP4523GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 ▼ Low On-resistance D1 40V RDS ON D2 D1 30mΩ ID ▼ Fast Switching Performance G2 S2 ▼ RoHS Compliant
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AP4523GM
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Untitled
Abstract: No abstract text available
Text: UCC1776 UCC2776 UCC3776 UNITRODE Quad FET Driver PRELIMINARY FEATURES DESCRIPTION • High Peak Output Current Each Output - 1 .5A Source, 2.0A Sink The UCC3776 is a four output BCDMOS buffer/driver designed to drive highly capacitive loads such as power MOSFET gates at high speeds. The
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UCC1776
UCC2776
UCC3776
UCC3776
UC3879
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