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    SOUTH SEA SEMICONDUCTOR Search Results

    SOUTH SEA SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SOUTH SEA SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC

    semiconductor cross reference

    Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference

    SSS2209

    Abstract: sot-23 P-Channel MOSFET
    Text: SSS2209 P-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 170 @VGS = -4.5V -2.0A -20V G 240 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		PDF SSS2209 OT-23 OT-23 SSS2209 sot-23 P-Channel MOSFET

    BSS138

    Abstract: No abstract text available
    Text: BSS138 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 50V 0.22A SOT-23 RDS(ON) (Ω) Max D 3.5 @VGS = 10V G 6.0 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		PDF BSS138 OT-23 OT-23 BSS138

    tjm sot23

    Abstract: No abstract text available
    Text: SSS2304 N-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 55 @VGS = 4.5V G 80 @VGS = 2.5V 3.2A 20V S 120 @VGS = 1.8V D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		PDF SSS2304 OT-23 OT-23 tjm sot23

    sss2309

    Abstract: No abstract text available
    Text: SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		PDF SSS2309 OT-23 OT-23 sss2309

    SSM4431

    Abstract: No abstract text available
    Text: SSM4431 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 6.0A - 30V 1 70 @VGS = - 5V 2 3 4 D (5, 6, 7, 8) 80 @VGS = - 4.5V FEATURES Super high dense cell design for low R DS(ON). G (4) Rugged and reliable.


    Original     		PDF SSM4431 SSM4431

    SSM4435A

    Abstract: No abstract text available
    Text: SSM4435A P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 RDS(ON) (mΩ) Max 8 25 @VGS = - 10V - 8.0A - 30V 7 45 @VGS = - 5V 6 5 1 2 3 4 D (5, 6, 7, 8) 60 @VGS = - 4.5V FEATURES Super high dense cell design for low R DS(ON). G (4) Rugged and reliable.


    Original     		PDF SSM4435A SSM4435A

    Untitled

    Abstract: No abstract text available
    Text: SSM4931 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 5.5A - 30V 1 70 @VGS = - 5V 2 80 @VGS = - 4.5V 3 4 D2 (5, 6) D1 (7, 8) FEATURES Super high dense cell design for low R DS(ON). G1 (2)


    Original     		PDF SSM4931

    Untitled

    Abstract: No abstract text available
    Text: SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 20A TO-252 RDS(ON) (mΩ) Max D 30 @VGS = 10V G 55 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		PDF SSD2030N O-252 O-252

    Untitled

    Abstract: No abstract text available
    Text: SSM9926 Dual N-Channel Enhancement Mode MOSFET Product Summary SO-8 8 VDS V 7 RDS(ON) (mΩ) Max ID (A) 6 5 30 @VGS = 4.0V 6A 20V 1 40 @VGS = 2.5V 2 3 4 D2 (5, 6) D1 (7, 8) FEATURES ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable.


    Original     		PDF SSM9926

    SSD3055LA

    Abstract: No abstract text available
    Text: SSD3055LA N-Channel Enhancement Mode MOSFET Product Summary VDS V TO-252 RDS(ON) (mΩ) Max ID (A) D 65 @VGS = 10V 15A 25V G 85 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		PDF SSD3055LA O-252 O-252 SSD3055LA

    TLO 81

    Abstract: P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT SSM8405
    Text: SSM8405 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) 8 RDS(ON) (mΩ) Max SO-8 7 6 5 25 @VGS = 10V 30V 7A 35 @VGS = 5V 1 2 40 @VGS = 4.5V 3 4 D1 (7,8) D2 (5,6) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max G1 (2)


    Original     		PDF SSM8405 TLO 81 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT SSM8405

    Untitled

    Abstract: No abstract text available
    Text: SSM4415 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) RDS(ON) (mΩ) Max 7 8 25 @VGS = - 20V - 8.0A - 30V SO-8 35 @VGS = - 10V 6 5 1 2 3 4 D (5, 6, 7, 8) FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. G (4)


    Original     		PDF SSM4415

    SSN2N7002A

    Abstract: No abstract text available
    Text: SSN2N7002A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-323 RDS(ON) ( ) Max D 3 @VGS = 10V G 4 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-323 package. Marking Code S 2A


    Original     		PDF SSN2N7002A OT-323 OT-323 SSN2N7002A

    P-Channel mosfet 40V

    Abstract: SSM8445
    Text: SSM8445 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) 8 RDS(ON) (mΩ) Max SO-8 7 6 5 30 @VGS = 10V 40V 6.8A 45 @VGS = 5V 1 2 50 @VGS = 4.5V 3 4 D1 (7,8) D2 (5,6) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max G1 (2)


    Original     		PDF SSM8445 P-Channel mosfet 40V SSM8445

    MOSFET "MARKING CODE 7V"

    Abstract: SOT-363 mosfet A495 5G12
    Text: SSN2N7002B Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-363 RDS(ON) ( ) Max 3 @VGS = 10V 1 4 @V GS = 5V D1 (6) D2 (3) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. G2(5) G1(2) SOT-363 package.


    Original     		PDF SSN2N7002B OT-363 OT-363 MOSFET "MARKING CODE 7V" SOT-363 mosfet A495 5G12

    ssg8

    Abstract: SSG8206A 7A TSSOP-8
    Text: SSG8206A Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 16V 7A TSSOP-8 8 RDS(ON) (m ) Max 7 6 5 20 @VGS = 4.0V 1 35 @VGS = 2.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. TSSOP-8 package.


    Original     		PDF SSG8206A ssg8 SSG8206A 7A TSSOP-8

    210t2

    Abstract: SSM8958
    Text: SSM8958 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) 30V 6A 8 RDS(ON) (mΩ) Max SO-8 7 6 5 30 @VGS = 10V 1 2 60 @VGS = 4.5V 3 4 D1 (7,8) D2 (5,6) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max G1 (2) G2 (4) 60 @VGS = - 10V


    Original     		PDF SSM8958 210t2 SSM8958

    ssg8

    Abstract: MOSFET TSSOP-8 dual n-channel SSG8405
    Text: SSG8405 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 25 @VGS = 10V 30V 6.5A 35 @VGS = 5V 1 40 @VGS = 4.5V 2 3 6 5 4 D (1) D (8`) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max 45 @VGS = - 10V


    Original     		PDF SSG8405 ssg8 MOSFET TSSOP-8 dual n-channel SSG8405

    Untitled

    Abstract: No abstract text available
    Text: SSM9923 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 30 @VGS = -4.5V -5.5A -20V 1 45 @VGS = -2.5V 2 3 4 90 @VGS = -1.8V D2 (5, 6) D1 (7, 8) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable.


    Original     		PDF SSM9923

    SSS3462

    Abstract: tlo 72
    Text: SSS3462 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) RDS(ON) (mΩ) Max D 60 @VGS = 10V 3.2A 60V SOT-23 G 85 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb free. o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		PDF SSS3462 OT-23 OT-23 SSS3462 tlo 72

    SSG4935A

    Abstract: No abstract text available
    Text: SSG4935A Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 27 @VGS = - 10V - 6.5A - 30V 42 @VGS = - 5V 1 50 @VGS = - 4.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low RDS(ON). G (4)


    Original     		PDF SSG4935A SSG4935A

    tic 2250

    Abstract: No abstract text available
    Text: SSS2316 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (mΩ) Max D 20 @VGS = 4.5V G 30 @VGS = 2.5V 5A 20V S 45 @VGS = 1.8V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S


    Original     		PDF SSS2316 OT-23 OT-23 Operati50% tic 2250