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    SPA 1118 Search Results

    SPA 1118 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    GCM033C70J104KE02J Murata Manufacturing Co Ltd 0201 (0603M) X7S (EIA) 6.3Vdc 0.1μF±10% Visit Murata Manufacturing Co Ltd
    GRT155R61A106ME13J Murata Manufacturing Co Ltd 0402 (1005M) X5R (EIA) 10Vdc 10μF±20% Visit Murata Manufacturing Co Ltd
    GRT21BD72A225KE13K Murata Manufacturing Co Ltd 0805 (2012M) X7T (EIA) 100Vdc 2.2μF±10% Visit Murata Manufacturing Co Ltd
    KC355QD7LF224KH01K Murata Manufacturing Co Ltd X7T (EIA) 1000Vdc 0.22μF±10% Visit Murata Manufacturing Co Ltd
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    SPA 1118 Price and Stock

    Sirenza Microdevices SPA1118

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    Bristol Electronics SPA1118 432
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    SPA1118 285
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    RF Micro Devices Inc SPA1118

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    Bristol Electronics SPA1118 74
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    RF Micro Devices Inc SPA-1118Z

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    Bristol Electronics SPA-1118Z 25
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    Quest Components SPA-1118Z 20
    • 1 $13.1985
    • 10 $11.732
    • 100 $11.732
    • 1000 $11.732
    • 10000 $11.732
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    Sirenza Microdevices SPA-1118Z

    810 MHz - 960 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SPA-1118Z 2,520
    • 1 $19.2375
    • 10 $19.2375
    • 100 $19.2375
    • 1000 $12.825
    • 10000 $12.825
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    SPA-1118Z 1,170
    • 1 $17.1
    • 10 $17.1
    • 100 $17.1
    • 1000 $8.55
    • 10000 $8.55
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    SPA 1118 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPA-1118 RF Micro Devices RF Amplifiers, RF/IF and RFID, IC AMP HBT GAAS 850MHZ 8-SOIC Original PDF
    SPA-1118 Sirenza Microdevices 850 MHz 1 Watt Power Amp with Active Bias Original PDF
    SPA-1118 Sirenza Microdevices 850 MHz 1 Watt Power Amplifier with Active Bias Original PDF
    SPA-1118 Stanford Microdevices 850 MHz 1 watt power amplifier with active bias. Original PDF
    SPA-1118Z RF Micro Devices RF Amplifiers, RF/IF and RFID, IC AMP HBT GAAS 850MHZ 8-SOIC Original PDF
    SPA-1118Z Sirenza Microdevices 850 MHz 1 Watt Power Amplifier with Active Bias Original PDF

    SPA 1118 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2005Z

    Abstract: TRANSISTOR a105 a105 transistor 2005 Z 2005.z SXA3318BZ JESD22-A113C spa2318z JESD22-A-102 JESD22-A104B
    Text: Reliability Qualification Report SPA-2318 - SnPb Plated SPA-2318Z - Matte Sn, RoHS compliant Products Qualified by Similarity SPA-1118 SPA-1218 SPA-1318 SPA-2118 SXA-3318B SPA-1118Z SPA-1218Z SPA-1318Z SPA-2118Z SXA-3318BZ The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for


    Original     		PDF SPA-2318 SPA-2318Z SPA-1118 SPA-1218 SPA-1318 SPA-2118 SXA-3318B SPA-1118Z SPA-1218Z SPA-1318Z 2005Z TRANSISTOR a105 a105 transistor 2005 Z 2005.z SXA3318BZ JESD22-A113C spa2318z JESD22-A-102 JESD22-A104B

    1watt wireless amplifier schematic

    Abstract: SPA-1118 SPA-1118Z MCH18 MCR03 SPA11
    Text: SPA-1118 Z SPA-1118(Z) 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP 8 Product Description Features RFMD’s SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic


    Original     		PDF SPA-1118 850MHz 850MHz MCH18 106K020R 1000pF, 1watt wireless amplifier schematic SPA-1118Z MCR03 SPA11

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-1118 SPA-1118 AN-029 EDS-101427

    200 watt schematics power amp

    Abstract: MCH18 MCR03 SPA-1118 SPA-1118Z TAJB106K020R Sirenza Microdevices al
    Text: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-1118 SPA-1118 SPA-1118Z EDS-101427 200 watt schematics power amp MCH18 MCR03 SPA-1118Z TAJB106K020R Sirenza Microdevices al

    Untitled

    Abstract: No abstract text available
    Text: Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-1118 SPA-1118 IS-95 EDS-101427

    MCH18

    Abstract: MCR03 SPA-1118 SPA-1118Z TAJB106K020R
    Text: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-1118 SPA-1118 SPA-1118Z EDS-101427 MCH18 MCR03 SPA-1118Z TAJB106K020R

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-1118 SPA-1118 IS-95 EDS-101427

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-1118 SPA-1118 IS-95 EDS-101427

    TRANSISTOR 726

    Abstract: SPA-1118
    Text: Preliminary Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-1118 SPA-1118 Prod003 AN-029 EDS-101427 TRANSISTOR 726

    SPA-1118

    Abstract: ECB-101161
    Text: Advanced Information Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original     		PDF SPA-1118 SPA-1118 AN-029 ECB-101161

    TQX6273

    Abstract: simpson 464 Tele Quartz Group 16.384 MHz Tele Quarz Group Crystal Oscillator HC-49 crystal Tele Quarz Group 16.384 CT 9254 Telcona N1086 30227
    Text: SIEMENS ICs for Communications Framing and Line Interface Component for PCM 30 and PCM 24 FALC54 and FALC-LH PEB 2254 PEB 2255 Crystal recommendation Application Note 12.97 PEB 2255 Revision History : Previous Version : None Page Page Current Version : 12.97


    Original     		PDF FALC54 254-A TQX6273 simpson 464 Tele Quartz Group 16.384 MHz Tele Quarz Group Crystal Oscillator HC-49 crystal Tele Quarz Group 16.384 CT 9254 Telcona N1086 30227

    macbook pro 13

    Abstract: mb166 ASUS eee PC 900 dell d630 toshiba 8893 macbook AMD turion 64 X2 ASUS X50Z compaq 510 ACER Aspire JDW50
    Text: Acer Acer Acer Acer Aspire 5230 JAWD0 Aspire 5410T (MS2272) Aspire 5410TZ (MS2272) Aspire 5520 series (ICW50) 13.71 7.27 7.27 10.16 1.34 1.38 1.38 1.44 Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Aspire 5635 (ZR6) Aspire 5710 series (JDW50)


    Original     		PDF AOD150 KAV10) MS2229) JAT10) 3410T 3810T macbook pro 13 mb166 ASUS eee PC 900 dell d630 toshiba 8893 macbook AMD turion 64 X2 ASUS X50Z compaq 510 ACER Aspire JDW50

    99093

    Abstract: 3478A DFIS-100
    Text: MAY 28,1999 TEST REPORT 1198643 QUALIFICATION TESTING PSS-23-01-T-S HFWS-20-01-T-S SAMTEC CORPOR4TION APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. Contech Research CERTIFICATION This is to certify that the evaluation described herein was


    Original     		PDF PSS-23-01-T-S HFWS-20-01-T-S 10012-l 99093 3478A DFIS-100

    TRANSISTOR REPLACEMENT GUIDE d882

    Abstract: transistor D1876 TRANSISTOR D412 7403-09FR d1876 transistor SIL-PAD 2000 density transistors D1876 SIL-PAD 3223 Sil Pad A2000 0.015 TR-NWT-000930
    Text: Thermally Conductive Interface Materials for Cooling Electronic Assemblies Sil-Pad S E L E C T I O N G U I D E All statements, technical information and recommendations herein are based on tests we believe to be reliable, and THE FOLLOWING IS MADE IN LIEU OF ALL WARRANTIES,


    Original     		PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    crouzet SA 12

    Abstract: time relay 24v crouzet crouzet CP crouzet relay D4010 Crouzet relais 702 26
    Text: 3 3 th / - 3/.2 533 - _ h t s u Relais temporisés miniatures Miniature Timers Miniatur-Zeitrelais RTM A2 RTM A4 C Crouzet Relais temporisés miniatures électroniques RTM Miniature electronic timers RTM Miniatur-Zeitrelais


    OCR Scan     		PDF

    10KW

    Abstract: 85C72 85C82 85C92 S5C82
    Text: M i c r o c h 85C72/82/92 i p 1K/2K/4K 5.0V CMOS Serial EEPROM PACKAGETYPE Low power CMOS technology Two wire serial interface bus, l2C compatible 5 volt only operation Self-timed write cycle including auto-erase Page-write buffer 1ms write cycle time for single byte


    OCR Scan     		PDF 85C72/82/92 85C72 85C82 85C92 128x8 256x8 2x256x8 DS11182B-page blD3501 10KW S5C82

    Untitled

    Abstract: No abstract text available
    Text: 85C72/82/92 M ic r o c h ip 1K/2K/4K 5.0V CMOS Serial EEPROM PACKAGETYPE FEATURES • Low power CMOS technology • Two wire serial interface bus, l2C compatible DIP • 5 volt only operation • Self-timed write cycle including auto-erase • Page-write buffer


    OCR Scan     		PDF 85C72/82/92 85C72 128x8 85C82 85C92 14-lead 85C72/82/92 DS11182B-page

    Untitled

    Abstract: No abstract text available
    Text: M 8 5 C 7 2 /8 2 /9 2 ic r o c h ip 1K/2K/4K 5.0V CMOS Serial EEPROM PACKAGETYPE FEATURES • Low power CMOS technology • Two wire serial interface bus, l2C compatible DIP O ' A0 C 1 8 ^ Vcc • 5 volt only operation • Self-timed write cycle including auto-erase


    OCR Scan     		PDF DSl1182B-page3-144

    PH ON 823 m 9010

    Abstract: ic an 7591 marking 2u MH 7437
    Text: MODEL TJ Inductor Toroid, High Current FEATURES • Printed circuit mounting • Wide range of inductance and current ratings • Toroid design reduces EMI • Vertical or horizontal mounting to optimize P.C. Board layout APPLICATIONS Switching power supplies, EMI/RFI filtering, output chokes.


    OCR Scan     		PDF

    Da15 to de9

    Abstract: DD110963-5 D20419-74 DB110963-3 D20419-80 DA110963-2 db25 dc37 BACKSHELL 463 dc37 cutout 98020
    Text: D Subminiature Accessories ITT Cannon o ffe rs one of the broadest lines of accessories fo r the 0 Subm iniature line o f connec­ tors in today's m arketplace. The ITT Cannon acce s­ sory line o ffers unlim ited design versatility. Choose from a variety o f plastic, metal, EM I/R FI backshells, screw locks, jackscrew s, and spring latches.


    OCR Scan     		PDF D20420 5121X) DB51226-1B B111811 Da15 to de9 DD110963-5 D20419-74 DB110963-3 D20419-80 DA110963-2 db25 dc37 BACKSHELL 463 dc37 cutout 98020

    DVP60ES2

    Abstract: DVP20EX2 DVP16ES2 DVP32ES2 DVP20EX200R delta plc DVP 32ES2 DVP40ES2-T DVP60ES200R DVP16ES200R DVP60ES2-R
    Text: DELTA ELECTRONICS, INC. w w w .d e lta .c o m .tw /in d u s tr ia la u to m a tio n IA B U H e a d q u a rte rs Delta E lectronics, Inc. T aoyuanl 31 -1, X in g b a n g R oad, G u ish a n In d u s tria l Z one , T aoyuan C o u n ty 3 3 3 7 0 , T aiw an, R .O .C .


    OCR Scan     		PDF 14-bit DVP04PT-E2 Pt100, Pt1000, 16-bit DVP04TC-E2 input/-80mV~ DVP60ES2 DVP20EX2 DVP16ES2 DVP32ES2 DVP20EX200R delta plc DVP 32ES2 DVP40ES2-T DVP60ES200R DVP16ES200R DVP60ES2-R

    ntp 3200 ic

    Abstract: ntp 3200 789800 NEC Electronics uPD Series
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿ÎPD789011, 789012 8-BIT SINGLE-CHIP MICROCONTROLLER The /¿PD789011 and 789012 are productsin the /¿PD789014 Subseries of compact, general-purpose m icrocontrollers in the 78K/0S Series. In addition to an 8-bit CPU, these products have substantial hardware such as on-chip I/O ports,


    OCR Scan     		PDF uPD789011 uPD789012 PD789011 PD789014 78K/0S PD78P9014, PD78P9014 U11187E U11047E ntp 3200 ic ntp 3200 789800 NEC Electronics uPD Series

    hall effect sensor s41

    Abstract: mosfet z-44 Transistor hall s41 DIN ISO 2768 motorola 6800 8bit software architecture Pinout diagram of FND 500 basic stamp bipolar stepper motor hall s41 INSTRUCTION SET motorola 6800 motorola 6800 8bit hardware architecture
    Text: SECTION 11NTRODUCTION The MC68HC16Y3 and the MC68HC916Y3 microcontrollers are high-speed 16-bit control units that are upwardly code compatible with M68HC11 controllers. Both are members of the M68HC16 Family of modular microcontrollers. M68HC16 microcontroller units MCUs are built up from standard modules that inter­


    OCR Scan     		PDF 11NTRODUCTION MC68HC16Y3 MC68HC916Y3 16-bit M68HC11 M68HC16 MC68HC16Y3/916Y3 hall effect sensor s41 mosfet z-44 Transistor hall s41 DIN ISO 2768 motorola 6800 8bit software architecture Pinout diagram of FND 500 basic stamp bipolar stepper motor hall s41 INSTRUCTION SET motorola 6800 motorola 6800 8bit hardware architecture