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    SPA 49 TRANSISTORS Search Results

    SPA 49 TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SPA 49 TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


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    B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    OV10630

    Abstract: GCM32ER71C226KE19L
    Text: DS90UB913A-CXEVM & DS90UB914A-CXEVM REV A User's Guide User's Guide Literature Number: SNLU135 JUNE 2013 Chapter 1 SNLU135 – JUNE 2013 Introduction 1.1 Overview The Texas Instruments DS90UB913A-CXEVM & DS90UB914A-CXEVM REV A Evaluation Modules EVM provides an easy way to evaluate the operation and performance of the DS90UB913AQ /


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    DS90UB913A-CXEVM DS90UB914A-CXEVM SNLU135 DS90UB914A-CXEVM DS90UB913AQ DS90UB914AQ DS90UB913A-CXEVM OV10630 GCM32ER71C226KE19L PDF

    2SD 4206

    Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


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    MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC PDF

    TRANSISTOR SMD 613

    Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


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    MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor PDF

    DS90UH926Q

    Abstract: No abstract text available
    Text: User’s Guide Sept 2012 DS90UH926QSEVB User’s Guide LIST OF FIGURES . 1 LIST OF TABLES . 1


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    DS90UH926QSEVB DS90UH926QSEVB DS90UH926Q PDF

    DS90UH926Q

    Abstract: No abstract text available
    Text: User’s Guide Sept 2012 DS90UH925QSEVB User’s Guide LIST OF FIGURES . 1 LIST OF TABLES . 1


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    DS90UH925QSEVB DS90UH925QSEVB DS90UH926Q PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Guide Sept 2012 DS90UB926QSEVB User’s Guide LIST OF FIGURES . 1 LIST OF TABLES . 1


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    DS90UB926QSEVB DS90UB926QSEVB ISO/TS16949 ISO/TS16949. PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Guide Sept 2012 DS90UB925QSEVB User’s Guide LIST OF FIGURES . 1 LIST OF TABLES . 1


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    DS90UB925QSEVB DS90UB925QSEVB ISO/TS16949 ISO/TS16949. PDF

    transistor Bc 949

    Abstract: Oasis Nexus S SA 613 Nexus S camera
    Text: Features and Performances of Reprogrammable Nonvolatile Byte-wide Floating Gate Memories Technical Paper Revised March 1999 1.0 INTRODUCTION Over the past 20 to 25 years, various floating gate devices have been increasingly used for reprogrammable nonvolatile memory NVM applications.


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    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


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    CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams PDF

    pt100 amplifier schematic

    Abstract: pt100 sensor interface WITH ADC PT100 bridge example pressure sensor circuit pt100 sensor interface with microcontroller HPX050AS pt100 2 wire sensor interface ADC PT100 bridge adc AD8290 FGN-615PGSR
    Text: G = 50, CMOS Sensor Amplifier with Current Excitation AD8290 FEATURES GENERAL DESCRIPTION Supply voltage range: 2.6 V to 5.5 V Low power 1.2 mA + 2x excitation current 0.5 A shutdown current Low input bias current: ±100 pA High CMRR: 120 dB Space savings: 16-lead, 3.0 mm × 3.0 mm × 0.55 mm LFCSP


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    AD8290 16-lead, AD8290 053106-B MO-248-UEED. 16-Lead CP-16-12) AD8290ACPZ-R2 pt100 amplifier schematic pt100 sensor interface WITH ADC PT100 bridge example pressure sensor circuit pt100 sensor interface with microcontroller HPX050AS pt100 2 wire sensor interface ADC PT100 bridge adc FGN-615PGSR PDF

    HV9961

    Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
    Text: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


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    product25 HV9961 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509 PDF

    d1684

    Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
    Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249


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    2SA1520 A1522 A1523 A1524 A1525 A1526 A1527 A1528 A1536 A1537 d1684 C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460 PDF

    uart 8250

    Abstract: LZ64 programmable interval timer 8253 BPS-8 equivalent RS232-specification 8250 UART 8253 timer master touch nvram 1k
    Text: n A . | • A p p lic a tio n q D A L L A O SEMICONDUCTOR N o te 7 4 Reading and Writing Touch Memories v « Seria| |nterfaces I. INTRODUCTION For read operations all devices are satisfied with a 5kil pull-up resistor to supply energy and to terminate the


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    RS232 1N5242 ERA-82-004 1N5818 LT1109CN8-12 2N7000 uart 8250 LZ64 programmable interval timer 8253 BPS-8 equivalent RS232-specification 8250 UART 8253 timer master touch nvram 1k PDF

    MA-406 8.0000M-C3

    Abstract: No abstract text available
    Text: ill ÆSj ra?MrtriL V u.Ajm-mm S micmsemj Comm erce Drive s r s s s ^ 18936-1013 s o i 332 RF & MICROWAVE TRANSISTORS UHF SMALL SIGNAL HtGH FT • ■5,5 GHï VfcHY LOW NCISfc ALL GOLD ME': ALLI2E0 HERMETIC PACKAGE PâN CONNECTIONS DESCRIPTION Ttw SOI 332 is an all gold met&iltefid NPN silicon


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    volterra

    Abstract: VOLTERRA VT b2c2 poon Modelling VOLTERRA -VSC1294-LF.D.G.B BFR520 CT-20 BFR520 transistor quasi
    Text: 1994 Bipolar/BiCMOS Circuits & Technology Meeting 3.2 Advanced modelling of distortion effects in bipolar transistors using the Mextram model L.C.N. de Vreede, H.C. de Graaff, K. Mouthaan, M. de Kok, J.L. Tauritz and R.G.F. Baets Delft University of Technology, Dept, of Electrical Engineering


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    CT-20, volterra VOLTERRA VT b2c2 poon Modelling VOLTERRA -VSC1294-LF.D.G.B BFR520 CT-20 BFR520 transistor quasi PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    mrf941

    Abstract: MRF9411L s2l sot23
    Text: MOTOROLA SC X S T R S / R MOTOROLA 4bE D • b3b?25M _ F m SEMICONDUCTOR ■ 0014*14*1 4 ■ *T^3 I - TECHNICAL DATA MRF941 MMBR941L MRF9411L The RF Lino NPN S ilico n Low N bise, High-Frequency Transistors lc 3 50 mA LOW NOISE HIGH FREQUENCY


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    MRF941 MMBR941L MRF9411L MRF941 MRF9411L s2l sot23 PDF

    MRF522

    Abstract: MRF524 MRFC521 MRF5211 MRF5211L mrfc case 317-01 MRF521 motorola MRF microlab slug tuner SF
    Text: 12E D I b3b755M G0Ö7732 M OTOROL A MO TO ROLA SC T | XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA MRF521 M RFC521 M RF522 M R F524 M R F52 11 ,L The RF Line P N P S ilic o n H ig h -F re q u e n cy T ra n s is to rs . designed primarily for use in the high-gain, low-noise sm all-signal amplifiers for


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    ti3ti755M OT-143 MRF5211) MRF5211L) MRF522 MRF524 MRFC521 MRF5211 MRF5211L mrfc case 317-01 MRF521 motorola MRF microlab slug tuner SF PDF

    6852 d TRANSISTOR

    Abstract: lt 6224 7805m te 330 61m L6064 SS769 m 9583 transistor 54676 SD1338
    Text: H f i r i. ! Ê W tË C n JS G n rÊ Ê « Comm erce Drive Montgomaryvills, PA T ôi ; 21S 631_9840 18936-1013 S D 1332 RF & MICROWAVE TRANSISTORS UHF SMALL SIGNAL * HIGH F T - 5 . 5 GHz * V L R Y LO W NOISfc: « ALL GOLD METALLiZED * HfcHMfc I IC PACKAUc


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    SD1338 SD133S SD1332 SD1332 6852 d TRANSISTOR lt 6224 7805m te 330 61m L6064 SS769 m 9583 transistor 54676 SD1338 PDF

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier Provisional Data Sheet No. PD-9.1444A dv/dt RATED HEXFET TRANSISTOR IRHF731 OSE R E P E TITIV E AVALAN C HE A ND N -C H A N N EL S IN G L E E V E N T E F F E C T S E E R A D H A R D 400 Volt, 4.5Q, (SEE) RAD HARD HEXFET International R e ctifier’s (S E E ) RAD H AR D tech nolog y


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    IRHF731 PDF

    DS2501 transistor

    Abstract: WASHING machine interfacing 8051 Sony Semiconductor Replacement Handbook 1991 touch dimmer TC 306 S PNI 12927 edn handbook dallas ds2501 NE5532 signetics texas instruments cmos mosfet MOSFET BOOK
    Text: J Copyright 1996 by Dallas SemiconductorCorporation. All Rights Reserved. Dallas Semiconductor retains all ownership rights in the technology described herein. Trademarks and registered trademarks of Dallas Semiconductor include each of the following: Dallas Semiconductor Corporation


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    DS1802 DS2501 transistor WASHING machine interfacing 8051 Sony Semiconductor Replacement Handbook 1991 touch dimmer TC 306 S PNI 12927 edn handbook dallas ds2501 NE5532 signetics texas instruments cmos mosfet MOSFET BOOK PDF

    Untitled

    Abstract: No abstract text available
    Text: FSYC9055D, FSYC9055R Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1998 Features Description • 59A, -60V, ros ON = 0-027Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


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    FSYC9055D, FSYC9055R PDF