SPBX4N60S5 Search Results

SPBX4N60S5 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SPBX4N60S5		Infineon Technologies	Cool MOS TM Power Transistor		Original	PDF

SPBX4N60S5 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SPPX4N60S5 Abstract: TRANSISTOR SMD MARKING CODE ag DIODE smd marking Ag SPBX4N60S5 X4N60S5 Text: SPPX4N60S5 SPBX4N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • dv/dt rated • 150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code	Original	SPPX4N60S5 SPBX4N60S5 X4N60S5 P-TO220-3-1 P-TO263-3-2 SPPX4N60S5: SPPX4N60S5 TRANSISTOR SMD MARKING CODE ag DIODE smd marking Ag SPBX4N60S5 X4N60S5	PDF
03N60S5 Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5 Text: SPP03N60S5 SPB03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 SPP03N60S5 P-TO220-3-1 P-TO263-3-2 03N60S5 Q67040-S4184 03N60S5 Q67040-S4184 SPB03N60S5	PDF
SPPX4N60S5 Abstract: 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5 Text: SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated	Original	SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 SPPx4N60S5/SPBx4N60S5 Q67040-S4184 03N60S5 SPPX4N60S5 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5	PDF
03n60s5 Abstract: TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 SPP03N60S5 Text: SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-TO220-3-1 03N60S5 Q67040-S4184 P-TO263-3-2 SPP03N60S5 03n60s5 TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5	PDF
DIODE JS.9 smd Abstract: No abstract text available Text: SIEMENS SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-T0220-3-1 03N60S5 Q67040-S4184 P-T0263-3-2 DIODE JS.9 smd	PDF
BYT 56 diode Abstract: smd transistor marking TQ smd diode JD BYt 32 Text: SIEM EN S SPPX4N60S5 SPBX4N6QS5 Target data sheet Coot MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT05154 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPPX4N60S5 ^DS 600 V b 3.2 A %S on	OCR Scan	SPPX4N60S5 VPT05154 SPBX4N60S5 X4N60S5 P-T0220-3-1 P-T0263-3-2 SPPX4N60S5: BYT 56 diode smd transistor marking TQ smd diode JD BYt 32	PDF